JP6726802B2 - 物理量測定装置およびその製造方法ならびに物理量測定素子 - Google Patents
物理量測定装置およびその製造方法ならびに物理量測定素子 Download PDFInfo
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- JP6726802B2 JP6726802B2 JP2019504369A JP2019504369A JP6726802B2 JP 6726802 B2 JP6726802 B2 JP 6726802B2 JP 2019504369 A JP2019504369 A JP 2019504369A JP 2019504369 A JP2019504369 A JP 2019504369A JP 6726802 B2 JP6726802 B2 JP 6726802B2
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- stress relaxation
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Description
図1は、圧力測定装置100の概念図である。
図3は、本実施例における半導体素子15とダイアフラム14との接合体の断面を示す。
絶縁層21に関しては、絶縁性であれば特に規定されるところではなく、一般的なガラス材料などを用いることができる。また、ペーストで熱処理により形成される場合には、結晶化ガラスであっても良い。また、絶縁層21の厚みは特に規定されるものではなく、5〜500μm程度まで幅広く使用できるが、信頼性とセンサとしての出力の関係から特に好ましいのは20μm以上300μm以下である。
接合層形成ペーストに用いるガラスの作製法としては、特に限定されるところではないが、原料となる各酸化物を配合・混合した原料を白金ルツボに入れ、電気炉で5〜10℃/分の昇温速度で800〜1100℃まで加熱し、数時間保持することで作製することができる。保持中は均一なガラスとするために攪拌することが望ましい。ルツボを電気炉から取り出す際には、ガラス表面への水分吸着を防止するために予め100〜150℃程度に加熱しておいた黒鉛鋳型やステンレス板上に流し込むことが望ましい。
接合層22を作製するに当たり接合層形成ペーストを作製した。接合層形成ペーストは、上記で作製したガラスを平均粒径(D50)が約3μmになるまでジェットミルを用いて粉砕したのち、同じく約3μm程度のフィラとして、Zr2(WO4)(PO4)2(ZWP)をガラスに対して30体積%加えた。この混合物に対し、バインダー樹脂としてエチルセルロースを、溶剤としてブチルカルビトールアセテートを加えて混錬し、接合層形成ペーストを作製した。
被接合材である半導体素子(熱膨張係数:37×10−7/℃)の接合面に、応力緩和層としてAl膜をDCスパッタにより形成した。そのときのAl膜の厚みを表1に示す(A3〜A12)。このとき、半導体素子とAl膜の間にはAl膜の接着層としてTiを250nm形成した。また、比較として半導体素子の接合面は、未処理のもの(A1)と、酸化処理したもの(A2)の2種類を用いた。
被接合材として、表1に示す厚みの応力緩和層を形成した半導体素子とSUS630製ダイアフラム(熱膨張係数:110×10−7/℃)を用いた。このダイアフラムの上面に絶縁層形成ペーストとして、市販のSiO2−Al2O3−BaO系ガラスペースト(DuPont社製 熱膨張係数:71×10−7/℃)を形成した。形成は、スクリーン印刷を用いてダイアフラム上に絶縁層形成ペーストを印刷後、150℃で30min乾燥後、850℃にて10min焼成することで約20μmの絶縁層を形成した。この絶縁層の上面に、上記で作製した接合層形成を同様にスクリーン印刷にて塗布し、400℃にて30min保持することで仮焼成を実施して約20μmの接合層を形成した。その後、この接合層の上面に応力緩和層を形成したシリコン基板を設置してシリコン基板の上面から荷重を付加し、400℃にて10min保持することで接合体を作製した。作製した接合体に対して、以下のせん断強度試験及び熱衝撃試験を実施した。せん断強度試験は、接合の接着強度を評価した。評価結果は、せん断強度が20MPa以上であるものを○、10MPa以上20MPa未満であるものを△、10MPa未満のものを×とした。熱衝撃試験は、―40℃〜130℃の温度範囲で実施して接合の信頼性を評価した。評価結果は、1000サイクル経過してもチップ割れや剥離がないものは○、チップ割れや剥離によって動作不良を起こしたものが30%以下である場合は△、それより多い場合には×とした。それらの結果を表1に併記する。
接合層形成ペーストとして市販の鉛系ガラスペースト(AGC製、430℃接合用、線膨張係数72×10−7/℃)を用いた。上記ガラスペーストを使用し、430℃で10分保持することで接合体を試作した。なお、接合層形成ペースト以外の試作条件は、実施例1と同様である。試作した接合体は実施例1同様にセンサ化した。その結果、サンプルによっては初期にチップの動作異常を生じるものがあることが判明した。これはチップの耐熱温度に依存すると考えられる。このことから、接合温度としては、400℃以下が好ましいことが判明した。
接合材25の製造方法を説明する。
ガラスG2の作製は、実施例1同様の手順にて行った。原料化合物として、五酸化バナジウムを20.5質量%、酸化銀を33質量%、酸化テルルを39質量%、酸化タングステンを5質量%、酸化ランタンを2.5質量%を配合・混合した混合粉末1kgを白金ルツボに入れ、電気炉を用いて5〜10℃/min(℃/分)の昇温速度で800℃の加熱温度まで加熱して2時間保持した。保持中は均一なガラスとするために攪拌した。次に、白金ルツボを電気炉から取り出し、予め100℃に加熱しておいたステンレス板上に流し込みガラスG2を得た。また、このガラスの軟化点は245℃である。
接合層形成ペーストは、上記で作製したガラスを平均粒径(D50)が約3μmになるまでジェットミルを用いて粉砕したのち、約1.5μm〜3μm程度のAg、Al粉末をガラスに対して表3に示す割合で加えた。この混合物に対し、α―テルピネオールもしくは実施例1同様にブチルカルビトールアセテートを加えて混錬し、接合層形成ペーストを作製した。
被接合材として、実施例1同様に半導体素子とSUS630製ダイアフラムを用いた。このとき、評価に用いる半導体素子は、表1に示すA7を用いた。半導体素子とダイアフラムの間に上記で作製した接合材25を設置し、半導体素子の上面から荷重を付加し、加熱することで接合体を作製した。このとき、300℃にて30分間保持した。作製した接合体に対して、実施例1同様にせん断強度試験及び熱衝撃試験を実施した。また、この接合体を実施例1と同様に圧力センサとし、低温と高温でセンサ出力値のドリフト特性を評価した。以上の結果を表3に併記する。
ガラスG3の作製は、実施例1同様の手順にて行った。原料化合物として、五酸化バナジウムを38質量%、酸化テルルを30質量%、酸化リンを5.8重量%、酸化タングステンを10質量%、酸化バリウムを11.2質量%、酸化カリウムを5質量%を配合・混合した混合粉末1kgを白金ルツボに入れ、電気炉を用いて5〜10℃/min(℃/分)の昇温速度で1100℃の加熱温度まで加熱して2時間保持した。保持中は均一なガラスとするために攪拌した。次に、白金ルツボを電気炉から取り出し、予め100℃に加熱しておいたステンレス板上に流し込みガラスG3を得た。また、このガラスの軟化点は336℃であった。
11…圧力ポート
12…圧力導入部
12a…圧力導入口
12ha…圧力導入孔
12hat…先端部
13…フランジ
14…ダイアフラム
15…半導体素子
16…基板
17…コンデンサ
18…カバー
18a…閉塞板
19…コネクタ
20…ターミナル
21…絶縁層
22…接合層
23…応力緩和層
24…応力緩和接合層
25…接合材
30a〜30c…歪抵抗ブリッジ
31a〜31c…アンプ
32a〜32c…A−D変換器
33…デジタル信号演算処理回路
34…不揮発メモリ
35…電圧源
100…圧力測定装置
Claims (9)
- 半導体素子と、
前記半導体素子と複数の層を介して接続される金属製の基台と、を有し、
前記複数の層は、
金属が主成分となる応力緩和層と、
ガラス製の絶縁層と、
前記半導体素子の耐熱温度以下の軟化点である低融点ガラスを含む接合層と、を備え、
前記応力緩和層の厚みが、合計で1.5μm以上5μm以下である物理量測定装置。 - 半導体素子と、
前記半導体素子と複数の層を介して接続される金属製の基台と、を有し、
前記複数の層は、
金属が体積含有率で50%から90%であり、前記半導体素子の耐熱温度以下の軟化点である低融点ガラスを含む第1の応力緩和接合層及び第2の応力緩和接合層と、
ガラス製の絶縁層と、を備え、
前記第1の応力緩和接合層は、前記半導体素子と前記絶縁層の間に設けられ、
前記第2の応力緩和接合層は、前記絶縁層と前記基台との間に設けられ、前記金属の体積含有率が前記第1の応力緩和接合層よりも高い物理量測定装置。 - 前記応力緩和層は、前記半導体素子と前記絶縁層の間、及び/又は、前記絶縁層と前記基台の間に設けられている請求項1に記載の物理量測定装置。
- 前記金属は、Ag、Cu、Al、Ti、Ni、Mo、Mn、W、Crから選ばれる少なくとも1種である請求項1乃至3の何れか一項に記載の物理量測定装置。
- 前記低融点ガラスには、バナジウム、銀、テルル元素のうち少なくとも2種類以上含む請求項1乃至4の何れか一項に記載の物理量測定装置。
- 前記応力緩和層は、スパッタ層もしくはメッキ層である請求項1または3に記載の物理量測定装置。
- 前記第1の応力緩和接合層及び前記第2の応力緩和接合層の厚みが、合計で0.05μm以上10μm以下である請求項2に記載の物理量測定装置。
- 前記第1の応力緩和接合層及び前記第2の応力緩和接合層の厚みが、合計で1.5μm以上5μm以下である請求項7に記載の物理量測定装置。
- 前記第1の応力緩和接合層及び前記第2の応力緩和接合層は、前記金属が体積含有率で50%から70%である請求項2に記載の物理量測定装置。
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