GB2104058A - Silver-filled glass metallizing paste - Google Patents

Silver-filled glass metallizing paste Download PDF

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Publication number
GB2104058A
GB2104058A GB08138681A GB8138681A GB2104058A GB 2104058 A GB2104058 A GB 2104058A GB 08138681 A GB08138681 A GB 08138681A GB 8138681 A GB8138681 A GB 8138681A GB 2104058 A GB2104058 A GB 2104058A
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GB
United Kingdom
Prior art keywords
paste
silver
solids content
finely
glass frit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB08138681A
Inventor
Raymond L Dietz
Peter K Margetts
Michael Featherby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Avx Components Corp
Original Assignee
AVX Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AVX Corp filed Critical AVX Corp
Publication of GB2104058A publication Critical patent/GB2104058A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5116—Ag or Au
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

A silver-filled glass metallizing paste comprises 20-80% of the solids content of finely divided silver, 75-20% of the solids content of a low-melting finely-divided glass frit, together with a suitable organic vehicle, the solids content of the paste being 75-85%. The paste, for attachment of silicon semi-conductive devices in lead-frame packages, is less expensive than a gold preform but useable in hermetic packages, and provides better electrical and thermal conductivity, and higher bond strength, than silver polyimides.

Description

SPECIFICATION Silver-filled glass metallizing paste The present invention relates generally to silver metallizations and, more particularly, the invention relates to a silver-filled glass composition adapted to bond silicon semiconductive devices to substrates.
Silver metallization compositions had their origins in decorative enamelling, but were adapted early on for use in thick film hybrid circuitry. The attention of early workers was, however concentrated on designing compositions that would adhere strongly to the ceramic substrate. The so-called "Scotch tape test" became an early standard of adhesion. Knox U.S.
Patent No. 2,385,580 disclosed high proportions of bismuth oxide in lead borosilicate glasses which was widely used with silver, but was not satisfactory with other noble metals. Hoffman, U.S. Patent No. 3,440,182 disclosed additions of vanadium and copper oxides as improving adhesion, solderability and conductivity of noble metal metallizing compositions generally. These compositions were used as conductors rather than as a medium for attachment of devices such as silicon integrated circuits to the substrates.
In the latter category, gold-based inks or preforms have been the most common, taking advantage of the low-temperature gold-silicon eutectic to achieve a good bond. Even though very substantial efforts have been made to reduce the amount of gold used to make such bonds, its expense mitigates against its use wherever possible.
There are no low-temperature phases in the silver-gold system which is a continuous series of solid solutions, and the silver-silicon system has a eutectic, but a high temperature one (over 8000 C), so systems based on silver must employ a fundamentally different bonding mechanism, indeed one where the silver per se plays little or no part.
Thus, where a gold preform is used to attach a silicon die to a silver metallized surface, the mechanism on one side is the gold-silicon eutectic and on the other it is a solid-liquid diffusion, with the glass playing the major role in terms of bond strength. Being less than a metallurgical bond, the thermal and electrical conductivity are not as good as desired.
Pure glass bonds have also been used in this service, but without a conductive element both conductivities suffer, as would be expected.
Silver polyimide compositions are also known in this application, but the quantity of silver that can be incorporated is limited, and special processing is necessary (for high-volume manufacturing, uniformity of processing is an important cost consideration). The biggest drawback of polyimide, or any organic bonding system, is that they cannot be used in hermetic packages such as Cerdips, because they are moisture getters, cannot be outgassed, and generally cannot withstand high temperature used in assembling these packages.
According to one aspect of the invention, there is provided a silver-filled glass metallizing paste comprising from 20 to 80% of the solids content of the paste of finely-divided silver, and from 75 to 20% of the solids content of the paste of a lowmelting, finely-divided glass frit, together with a suitable organic vehicle, the solids content of the paste being from about 75 to 85% of the paste.
In another aspect of the invention, there is provided a silver-filled glass metallizing paste comprising 20 to 80% of finely-divided silver; 75 to 20% of a low-melting, finely-divided glass frit; a suitable organic vehicle; the percent solids in said paste being in the range of about 75 to 85%.
All percentages specified herein are weight percentage unless otherwise specified.
In the selection of a silver powder for use with the invention it has been determined that both spherical and flake powders function well, though the latter produces a shinier, more metalliclooking finish. It is of interest that some prior workers specified flake for silver conductives, but that was for a current-carrying "wire" rather than a bonding medium.
Satisfactory silvers for the invention are those having a surface area in the range of 0.7 to 1 m2/gm, and a tap density of 2.25 to 2.75 g/cc.
The glass is the second key component, and it is essential that it be low-melting, so as to be molten at the die-attach temperature,425~ 4500C. The preferred glass selected meets this requirement, has a softening temperature of 3250C., and the following composition:- PbO 95~96% ZnO 0.15-0.20% SiO2 0.25-2.5% B203 remainder The glass is fritted and ground in a high-purity alumina jar mill to meet the following specifications~ surface area: 0.3-0.6 m2/gm tap density: 2.8-3.6 g/cc Generally, glasses having a softening point in the range of 3250 to 4250C., and a coefficient of thermal expansion no higher than about 13 ppm/ C., preferably in the range of 8-13 ppm/OC., may be used. For example, glasses may be formulated with bismuth oxide rather than lead oxide as the principle ingredient that will meet these criteria. On the other hand, any such glass should be sodium-free, due to its affinity for silicon.
The softening point should be at least 3250C.
to insure that all organics are burned off. If the softening point is higher than 4250C., the glass will not be sufficiently fluid at the die attach temperature. The glass is then mixed with the vehicle described hereinbelow (80% solids) and milled on a 3-roll mill to a particle size (F.O.G.) of 7-8 microns.
Those skilled in the art appreciate that the selection of vehicle is not critical, and a variety of appropriate vehicles are readily available. In this case the vehicle selected comprised:~ Ethyl methacrylate 12% Terpineol 88% The silver is then added to the glass paste in a desired silver: glass ratio as discussed below, but falling within the limits 25:75 to 80:20. The percent (total) solids is then adjusted to within the range of 75~85% by addition of more of the vehicle. Outside of this range, rheological problems are likely to be encountered; generally a solid content in the range of 80~83% is preferred.
Use of the paste is essentially conventional.
Depending on use a dot, square or screened area of the paste is applied on a metallized or bare film (ceramic) substrate. If it is dotted, the size of the dot is about 25% larger than the die. Die attach is carried out in air by oven drying at 500C. for 15 minutes, followed by firing at 4300 C. for 15 minutes. For test purposes, the package is subjected to a simulated (package) sealing cycle in the range of 4300C. Alternatively, the die may be attached by known scrubbing techniques, or hot-stage ultrasonic bonding may be employed.
A surprising aspect of the invention is that the mechanical strength of the bond is proportional to the silver content. Using a standard push test (Mil.
Spec. 883B, method 2019.1), a range of 5 to 15 Ibs. was recorded through the silver range of 25 to 80%. As would be expected, electrical conductivity also improves with silver content. At the low end, conductivity is comparable to the commercial expoxies, for example EPO-TEK P-10, and this is about double at the high end.
With both bond strength and conductivity rising with silver content a question could be raised as to utility of the low silver, high-glass compositions. The answer, generally, depends on intended use. More particularly, when the die is to be attached by mechanical scrubbing means, very good bonds are achieved with silver in the 25 40% range. In situations where it is desired to have the die sink in the ink to a degree, the higher silver ratios are preferred. At the very high silver end (e.g. 75-80%), tests indicate that the ink can be applied to a bare substrate and the chip can be ultrasonically down-bonded with good results. One would not want to go much above 80% silver as adhesion will start to drop off.There are thus a variety of possibilities, including elimination of certain processing steps by, for example, attaching lead frames and dies at the same time.
Various changes in the details, steps, materials and arrangements of parts, which have been herein described and illustrated to explain the nature of the invention, may be made by those skilled in the art within the principle and scope of the invention as defined in the appended claims.
The silver-filled glass paste described above produces strong bonds between a silicon die and a substrate, whether or not the latter is metallized, with controllable thermal and electrical conductivity, and may be used in hermetic packages. The paste may be used under normal processing conditions.
The silver-filled glass paste is lower in cost than gold-based systems, high in conductivity and bond strength (generally higher) than other silver or non-metallic systems) and is adapted for use in hermetic packages.

Claims (12)

Claims
1. A silver-filled glass metallizing paste comprising from 20 to 80% of the solids content of the paste of finely-divided silver, and from 75 to 20% of the solids content of the paste of a lowmelting, finely-divided glass frit, together with a suitable organic vehicle, the solids content of the paste being from about 75 to 85% of the paste all percentages being by weight.
2. A paste as claimed in Claim 1, wherein the silver has a surface area of from 0.7 to 1.0 m2/gm and a tap density of from 2.25 to 2.75 g/cc.
3. A paste as claimed in Claim 1 or Claim 2, wherein the glass frit has a softening temperature of from 3250 to 4250C. and a coefficient of thermal expansion of from 8 to 13 ppm/OC.
4. A paste as claimed in any one of the preceding Claims, wherein the glass frit has a surface area of from 0.3 to 0.6 in2/gm and a tap density of from 2.8 to 3.6 g/cc.
5. A paste as claimed in any one of the preceding Claims, wherein the glass frit consists essentially of, on a weight basis: PbO 95-96 ZnO 0.15--0.20% SiO2 0.25-2.5% B203 remainder
6. A paste as claimed in any one of the preceding Claims, wherein the organic vehicle comprises, by weight:~ Ethyl methacrylate 12% Terpineol 88%
7. A paste as claimed in Claim 1, wherein the silver constitutes from 25 to 80% by weight of the solids content of the paste.
8. A silver-filled glass metallizing paste adapted for bonding silicon semiconductive devices to ceramic substrates comprising:~ from 25 to 80% of the solids content of the paste of finely divided silver having a surface area of from 0.7 to 1.0 m2/gm and a tap density of from 2.25 to 2.75 g/cc; from 75 to 20% of the solids content of the paste of a finely divided glass frit having a softening point of from 3250 to 4250C; and a suitable organic vehicle in an amount sufficient to establish the solids content of said paste in the range of 75 to 85%.
9. A silver-filled glass metallizing paste comprising:~ 20 to 80% of finely-divided silver; 75 to 20% of a low-melting, finely-divided glass frit; a suitable organic vehicle; the percent solids in said paste being in the range of about 75 to 85%.
10. A silver-filled glass metallizing paste adapted for bonding silicon semiconductive devices to ceramic substrates comprising~ 25 to 80% of finely divided silver having a surface area of 0.7 to 1.0 m2/gm and a tap density of 2.25 to 2.75 g/cc; 75 to 20% of a finely divided glass frit having a softening point in the range of 3250 to 4250C; and a suitable organic vehicle in an amount sufficient to establish the solids content of said paste in the range of 75 to 85%.
11. A silver-filled glass metallizing paste substantially as hereinbefore described with reference to the accompanying drawings.
12. A method of attaching a silicon article to a substrate, which method comprises bonding the article to the substrate using a paste as claimed in any one of the preceding Claims.
GB08138681A 1981-08-03 1981-12-23 Silver-filled glass metallizing paste Withdrawn GB2104058A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28789281A 1981-08-03 1981-08-03

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GB (1) GB2104058A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198660A1 (en) * 1985-04-17 1986-10-22 Johnson Matthey, Inc., Silver-filled glass metallizing pastes
EP0294503A1 (en) * 1987-06-10 1988-12-14 Degussa Aktiengesellschaft Use of a paste containing a noble metal in the production of browning utensils for microwave ovens
GB2207669A (en) * 1987-08-06 1989-02-08 Stc Plc Providing metallised pads on transparent electrically conductive tracks on glass substrates
EP0323107A2 (en) * 1987-12-24 1989-07-05 Johnson Matthey Public Limited Company Bonding paste for electronic components
EP0404564A1 (en) * 1989-06-21 1990-12-27 Diemat, Inc. Low temperature glass composition, paste and method of use
WO1995004005A1 (en) * 1993-07-29 1995-02-09 E.I. Du Pont De Nemours And Company Lead-free thick film paste composition
EP1339258A1 (en) * 2000-12-01 2003-08-27 Ibiden Co., Ltd. Ceramic heater, and ceramic heater resistor paste
WO2009100797A1 (en) * 2008-02-11 2009-08-20 Robert Bosch Gmbh Device for fixing an electronic component to a carrier by means of a conductive refractory metal-glass paste
US7648789B2 (en) 2001-07-13 2010-01-19 Ceremic Fuel Cells Limited Fuel cell gas separator plate with paths of electrically conductive material of a silver-glass composite

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906596A (en) * 1987-11-25 1990-03-06 E. I. Du Pont De Nemours & Co. Die attach adhesive composition
JP3840921B2 (en) 2001-06-13 2006-11-01 株式会社デンソー Printed circuit board and manufacturing method thereof
JP2007235082A (en) 2006-02-02 2007-09-13 E I Du Pont De Nemours & Co Paste for solar battery electrode
DE112018001267T5 (en) * 2017-03-10 2019-11-21 Hitachi Automotive Systems, Ltd. Physical size measuring device, method for making it, and physical quantity measuring element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49116594A (en) * 1973-03-14 1974-11-07
JPS51146538A (en) * 1975-06-11 1976-12-16 Hitachi Ltd An electroconductive adhesive material

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0198660A1 (en) * 1985-04-17 1986-10-22 Johnson Matthey, Inc., Silver-filled glass metallizing pastes
EP0294503A1 (en) * 1987-06-10 1988-12-14 Degussa Aktiengesellschaft Use of a paste containing a noble metal in the production of browning utensils for microwave ovens
GB2207669B (en) * 1987-08-06 1991-05-15 Stc Plc Providing metallised pads on transparent electrically conductive tracks on glass substrates
GB2207669A (en) * 1987-08-06 1989-02-08 Stc Plc Providing metallised pads on transparent electrically conductive tracks on glass substrates
EP0323107A2 (en) * 1987-12-24 1989-07-05 Johnson Matthey Public Limited Company Bonding paste for electronic components
EP0323107A3 (en) * 1987-12-24 1990-06-20 Johnson Matthey Public Limited Company Bonding paste for electronic components
EP0404564A1 (en) * 1989-06-21 1990-12-27 Diemat, Inc. Low temperature glass composition, paste and method of use
WO1995004005A1 (en) * 1993-07-29 1995-02-09 E.I. Du Pont De Nemours And Company Lead-free thick film paste composition
US5468695A (en) * 1993-07-29 1995-11-21 E. I. Du Pont De Nemours And Company Lead-free thick film paste composition
EP1339258A1 (en) * 2000-12-01 2003-08-27 Ibiden Co., Ltd. Ceramic heater, and ceramic heater resistor paste
EP1339258A4 (en) * 2000-12-01 2005-07-20 Ibiden Co Ltd Ceramic heater, and ceramic heater resistor paste
US7648789B2 (en) 2001-07-13 2010-01-19 Ceremic Fuel Cells Limited Fuel cell gas separator plate with paths of electrically conductive material of a silver-glass composite
WO2009100797A1 (en) * 2008-02-11 2009-08-20 Robert Bosch Gmbh Device for fixing an electronic component to a carrier by means of a conductive refractory metal-glass paste

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