JP6641879B2 - レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法 - Google Patents

レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法 Download PDF

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Publication number: JP6641879B2
Authority: JP; Japan
Prior art keywords: underlayer film; resist underlayer; compound; composition; carbon
Prior art date: 2015-03-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2015207573A

Other languages

English (en)

Japanese (ja)

Other versions

JP2016167047A (ja

Inventor

剛史若松

直矢野坂

裕史松村

嘉夫滝本

翼阿部

木村　徹

徹木村

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

JSR Corp

Original Assignee

JSR Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-03-03

Filing date

2015-10-21

Publication date

2020-02-05

2015-10-21 Application filed by JSR Corp filed Critical JSR Corp

2016-01-21 Priority to TW105101817A priority Critical patent/TWI679502B/zh

2016-02-26 Priority to KR1020160022971A priority patent/KR102498508B1/ko

2016-03-03 Priority to US15/059,372 priority patent/US20170137663A9/en

2016-09-15 Publication of JP2016167047A publication Critical patent/JP2016167047A/ja

2020-02-05 Application granted granted Critical

2020-02-05 Publication of JP6641879B2 publication Critical patent/JP6641879B2/ja

Status Active legal-status Critical Current

2035-10-21 Anticipated expiration legal-status Critical

Links

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150000003950 cyclic amides Chemical class 0.000 description 1
150000004292 cyclic ethers Chemical class 0.000 description 1
CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
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238000000354 decomposition reaction Methods 0.000 description 1
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125000005447 octyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
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125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
239000003504 photosensitizing agent Substances 0.000 description 1
125000003367 polycyclic group Chemical group 0.000 description 1
229920000570 polyether Polymers 0.000 description 1
229920000573 polyethylene Polymers 0.000 description 1
229920001223 polyethylene glycol Polymers 0.000 description 1
229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
229920001296 polysiloxane Polymers 0.000 description 1
229920002223 polystyrene Polymers 0.000 description 1
229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
235000015497 potassium bicarbonate Nutrition 0.000 description 1
239000011736 potassium bicarbonate Substances 0.000 description 1
229910000105 potassium hydride Inorganic materials 0.000 description 1
NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
239000000843 powder Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
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RCYFOPUXRMOLQM-UHFFFAOYSA-N pyrene-1-carbaldehyde Chemical compound C1=C2C(C=O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 RCYFOPUXRMOLQM-UHFFFAOYSA-N 0.000 description 1
125000001725 pyrenyl group Chemical group 0.000 description 1
238000001953 recrystallisation Methods 0.000 description 1
238000001226 reprecipitation Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
238000009751 slip forming Methods 0.000 description 1
229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
235000017557 sodium bicarbonate Nutrition 0.000 description 1
229910000104 sodium hydride Inorganic materials 0.000 description 1
239000012312 sodium hydride Substances 0.000 description 1
235000019795 sodium metasilicate Nutrition 0.000 description 1
150000003460 sulfonic acids Chemical class 0.000 description 1
239000013589 supplement Substances 0.000 description 1
238000001308 synthesis method Methods 0.000 description 1
125000005579 tetracene group Chemical group 0.000 description 1
229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
UWIVZLWKBOZJFG-UHFFFAOYSA-N thiolan-1-ium trifluoromethanesulfonate Chemical compound C1CC[SH+]C1.[O-]S(=O)(=O)C(F)(F)F UWIVZLWKBOZJFG-UHFFFAOYSA-N 0.000 description 1
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
ULIAPOFMBCCSPE-UHFFFAOYSA-N tridecan-7-one Chemical compound CCCCCCC(=O)CCCCCC ULIAPOFMBCCSPE-UHFFFAOYSA-N 0.000 description 1
ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
229910001930 tungsten oxide Inorganic materials 0.000 description 1
125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
238000005406 washing Methods 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

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JP5925721B2 (ja) *	2012-05-08	2016-05-25	信越化学工業株式会社	有機膜材料、これを用いた有機膜形成方法及びパターン形成方法
WO2014038680A1 (ja)	2012-09-10	2014-03-13	Jsr株式会社	レジスト下層膜形成用組成物及びパターン形成方法
KR102222665B1 (ko) *	2013-06-24	2021-03-05	제이에스알 가부시끼가이샤	막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 패턴 형성 방법 및 화합물

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KR20230076778A (ko)	2021-11-24	2023-05-31	신에쓰 가가꾸 고교 가부시끼가이샤	레지스트 하층막 재료, 패턴 형성 방법 및 레지스트 하층막 형성 방법

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JP6641879B2 - レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法 - Google Patents

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