JP6598988B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP6598988B2 JP6598988B2 JP2018513973A JP2018513973A JP6598988B2 JP 6598988 B2 JP6598988 B2 JP 6598988B2 JP 2018513973 A JP2018513973 A JP 2018513973A JP 2018513973 A JP2018513973 A JP 2018513973A JP 6598988 B2 JP6598988 B2 JP 6598988B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/0221—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Description
この際、距離L0は、噴射領域R1が予め決定されている場合、基板積載ステージ3の搬送方向への形成長SL3によって決定する。そして、基板積載ステージ3の形成長SL3によって上面上に載置する基板10の数(基板載置枚数)が決定する。
なお、本実施の形態では、基板載置部として2つの基板積載ステージ3A及び3Bを示したが、移載機構8L及び8Rにそれぞれ2つの基板積載ステージ3を設ける等の改良により、4つ以上の基板積載ステージ3を用いて成膜装置を実現することも可能である。ただし、本実施の形態のように、2つの基板積載ステージ3A及び3Bのみで成膜装置を実現する方が、基板積載ステージ3の数を最小限に抑え、基板載置部移載装置である基板移載機構8の構成の簡略化、巡回搬送処理の制御内容の容易性等、装置コスト面で優れている。
3,3A,3B 基板積載ステージ
4A,4B 吸着把持器
4 吸着把持器
5 基板投入部
6 基板取出部
8 基板移載機構
10 基板
31 吸着機構
32 加熱機構
41A,41B 吸着機構
Claims (4)
- 各々が基板(10)を載置し、載置した基板を吸着する吸着機構(31)及び載置した基板を加熱する加熱機構(32)を有する第1及び第2の基板載置部(3A,3B)と、
成膜処理領域(R1)内の基板載置部に載置された基板に対して薄膜を成膜する成膜処理を実行する成膜処理実行部(1)と、
前記第1及び第2の基板載置部を移動させて前記成膜処理領域内を成膜時移動速度で順次通過させる搬送動作を実行する基板載置部移載装置(8L,8R)とを備え、
前記搬送動作は、前記第1及び第2の基板載置部のうち、載置した基板が全て前記成膜処理領域を通過した基板載置部である一方の基板載置部を、巡回速度で他方の基板載置部の後方に巡回配置させる巡回搬送処理を含み、
前記巡回速度の平均値は前記成膜時移動速度より高速であり、
前記第1及び第2の基板載置部はそれぞれ所定数の基板を搭載し、前記所定数は、前記他方の基板載置部に載置した全ての基板が前記成膜処理領域を通過するまでに前記巡回搬送処理が完了するように、設定されることを特徴とする、
成膜装置。 - 請求項1記載の成膜装置であって、
前記第1及び第2の基板載置部に載置される基板はシリコン基板である、
成膜装置。 - 請求項1記載の成膜装置であって、
前記成膜処理実行部は、原料溶液をミスト化して得られる原料ミスト(MT)を大気中に噴射して前記成膜処理を実行するミスト噴射部を含み、
前記成膜処理領域は前記原料ミストの噴射領域である、
成膜装置。 - 請求項3記載の成膜装置であって、
前記ミスト噴射部は前記原料ミストを噴射するミスト噴出口が形成される噴射面(1S)を有し、
前記噴射面と前記第1及び前記第2の基板載置部に載置された基板との前記噴射領域内における距離であるミスト噴射距離(D1)が、1mm以上30mm以下に設定されることを特徴とする、
成膜装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/063000 WO2017187500A1 (ja) | 2016-04-26 | 2016-04-26 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017187500A1 JPWO2017187500A1 (ja) | 2018-08-30 |
JP6598988B2 true JP6598988B2 (ja) | 2019-10-30 |
Family
ID=60161359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018513973A Expired - Fee Related JP6598988B2 (ja) | 2016-04-26 | 2016-04-26 | 成膜装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20190106789A1 (ja) |
JP (1) | JP6598988B2 (ja) |
KR (1) | KR102198675B1 (ja) |
CN (1) | CN108699692B (ja) |
DE (1) | DE112016006798B4 (ja) |
TW (1) | TWI603418B (ja) |
WO (1) | WO2017187500A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112018007706T5 (de) * | 2018-06-08 | 2021-02-18 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Filmausbildungsvorrichtung |
EP3722458B1 (en) * | 2019-02-28 | 2022-01-19 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Film forming device |
WO2020174642A1 (ja) * | 2019-02-28 | 2020-09-03 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
JPWO2021059486A1 (ja) * | 2019-09-27 | 2021-04-01 | ||
WO2023079787A1 (ja) * | 2021-11-02 | 2023-05-11 | 信越化学工業株式会社 | 成膜装置及び成膜方法並びに酸化物半導体膜及び積層体 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6155917A (ja) * | 1984-08-27 | 1986-03-20 | Sony Corp | 気相成長装置 |
JPS63166217A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | 半導体製造装置 |
JPH0831816A (ja) * | 1994-07-13 | 1996-02-02 | Sony Corp | 有機Siソースを用いた成膜方法、同成膜装置、及び半導体装置の製造方法 |
JP3909888B2 (ja) | 1996-04-17 | 2007-04-25 | キヤノンアネルバ株式会社 | トレイ搬送式インライン成膜装置 |
TW200636525A (en) * | 2005-04-04 | 2006-10-16 | Tian Tian Ji Le Mi Co Ltd | Improved food and drink transaction method |
US8033288B2 (en) * | 2007-03-09 | 2011-10-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment apparatus |
JP5417186B2 (ja) * | 2010-01-08 | 2014-02-12 | 大日本スクリーン製造株式会社 | 基板処理装置 |
TWI451521B (zh) * | 2010-06-21 | 2014-09-01 | Semes Co Ltd | 基板處理設備及基板處理方法 |
JP4991950B1 (ja) * | 2011-04-13 | 2012-08-08 | シャープ株式会社 | ミスト成膜装置 |
JP5841156B2 (ja) * | 2011-09-13 | 2016-01-13 | 東芝三菱電機産業システム株式会社 | 酸化膜成膜方法および酸化膜成膜装置 |
CN103065998A (zh) * | 2011-10-21 | 2013-04-24 | 东京毅力科创株式会社 | 处理台装置及使用该处理台装置的涂布处理装置 |
JP5148743B1 (ja) * | 2011-12-20 | 2013-02-20 | シャープ株式会社 | 薄膜成膜装置、薄膜成膜方法および薄膜太陽電池の製造方法 |
KR101986920B1 (ko) | 2012-06-08 | 2019-06-07 | 캐논 아네르바 가부시키가이샤 | 스퍼터링 장치 및 스퍼터링 성막 방법 |
JP2014072352A (ja) * | 2012-09-28 | 2014-04-21 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP5914690B2 (ja) * | 2012-11-05 | 2016-05-11 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
WO2015177916A1 (ja) * | 2014-05-23 | 2015-11-26 | 株式会社シンクロン | 薄膜の成膜方法及び成膜装置 |
-
2016
- 2016-04-26 DE DE112016006798.4T patent/DE112016006798B4/de active Active
- 2016-04-26 WO PCT/JP2016/063000 patent/WO2017187500A1/ja active Application Filing
- 2016-04-26 JP JP2018513973A patent/JP6598988B2/ja not_active Expired - Fee Related
- 2016-04-26 CN CN201680082592.3A patent/CN108699692B/zh active Active
- 2016-04-26 KR KR1020187024188A patent/KR102198675B1/ko active IP Right Grant
- 2016-04-26 US US16/086,936 patent/US20190106789A1/en not_active Abandoned
- 2016-06-30 TW TW105120733A patent/TWI603418B/zh active
Also Published As
Publication number | Publication date |
---|---|
DE112016006798T5 (de) | 2019-01-17 |
CN108699692B (zh) | 2021-03-02 |
KR20180104703A (ko) | 2018-09-21 |
TW201810486A (zh) | 2018-03-16 |
KR102198675B1 (ko) | 2021-01-05 |
US20190106789A1 (en) | 2019-04-11 |
DE112016006798B4 (de) | 2024-02-22 |
JPWO2017187500A1 (ja) | 2018-08-30 |
TWI603418B (zh) | 2017-10-21 |
CN108699692A (zh) | 2018-10-23 |
WO2017187500A1 (ja) | 2017-11-02 |
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