JP6592902B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6592902B2 JP6592902B2 JP2015007975A JP2015007975A JP6592902B2 JP 6592902 B2 JP6592902 B2 JP 6592902B2 JP 2015007975 A JP2015007975 A JP 2015007975A JP 2015007975 A JP2015007975 A JP 2015007975A JP 6592902 B2 JP6592902 B2 JP 6592902B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- region
- substrate
- sealing member
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 104
- 238000007789 sealing Methods 0.000 claims description 80
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 49
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 23
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 238000000605 extraction Methods 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 239000004953 Aliphatic polyamide Substances 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 1
- 229920002600 TPX™ Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229920003231 aliphatic polyamide Polymers 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229920006012 semi-aromatic polyamide Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
(実施形態)
(基板104)
(配線部108)
(発光素子102)
(ワイヤ112)
(接着剤)
(封止部材106)
(波長変換部材)
(蛍光体)
(発光装置100の製造方法)
(実施例)
102…発光素子
104…基板
106…封止部材
108、108A、108B…配線部
109、109A、109B…電極端子
110…保護素子
112…ワイヤ
202…溝
300…マスク
302…スキージ
304…カソードマーク
A1、A2…領域
B1〜B4…辺
Claims (9)
- 配線部を有し、xy平面上においてx方向に延在する一対の横辺と、y方向に延在する一対の縦辺とを有する矩形状の基板と、
前記基板の上に載置された発光素子と、
前記発光素子及び前記基板の少なくとも一部を被覆し、波長変換部材を含有する封止部材と
を備え、
前記発光素子は、前記配線部以外の領域に配置されており、前記配線部とワイヤにより電気的に接続されており、
平面視において、前記基板上の前記封止部材に被覆される領域は前記矩形状の中心を通り、かつx方向に平行な直線によって、第1領域と第2領域とに分けられており、
前記配線部は、前記第2領域よりも前記第1領域で面積が大きくなるように配置され、
前記発光素子は、前記第1領域よりも前記第2領域で面積が大きくなるように配置され、
前記封止部材は、前記x方向において高低差を設けず、y方向に平行な直線を対称軸として線対称に配置されており、前記封止部材の上面は前記基板の表面と平行な面を有さず、かつ前記y方向において前記基板の第2領域側の一端部から第1領域側の他端部へ連続して傾斜するよう高低差を設けており、
前記封止部材の最大高さは、前記第1領域側よりも、前記第2領域側において高いことを特徴とする発光装置。 - 前記配線部は、前記基板よりも前記発光装置の発光波長における反射率が低い請求項1に記載の発光装置。
- 前記波長変換部材は2種類以上の蛍光体を含む請求項1又は2に記載の発光装置。
- 前記封止部材の最大高さは700μm以下である請求項1〜3のいずれか1項に記載の発光装置。
- 前記配線部上には保護素子が配置されており、前記配線部と前記保護素子とが電気的に接続される請求項1〜4のいずれか1項に記載の発光装置。
- 前記発光素子は、前記基板上に1個載置される請求項1〜5のいずれか1項に記載の発光装置。
- xy平面上においてx方向に延在する一対の横辺と、y方向に延在する一対の縦辺とを有する矩形状の基板の上面において、前記矩形状の中心を通り、かつx方向に平行な直線によって分けられる第1領域と第2領域とを有し、前記第1領域において面積が大きくなるように配置された配線部と、前記第2の領域において面積が大きくなるように配置された発光素子とを有する基板が、複数連なってなる集合基板を準備する工程と、
前記集合基板上に、複数の前記基板のそれぞれと対応する位置に開口を有するマスクを載置し、前記マスクの上側の一方に、波長変換部材を含有した封止部材を配置し、前記基板の第1領域側から第2領域側へ向かって前記第1領域側より前記第2領域側の封止部材の量が多くなるようにスキージを移動させることにより、前記開口に前記封止部材を、y方向において、前記第1領域よりも前記第2領域に傾斜するように印刷する工程と、
前記マスクを除去する工程と
を有することを特徴とする発光装置の製造方法。 - 前記集合基板を、前記基板ごとに個片化する工程を有する請求項7に記載の発光装置の製造方法。
- 前記個片化は、前記集合基板に形成された溝に沿って行われる請求項8に記載の発光装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015007975A JP6592902B2 (ja) | 2014-03-28 | 2015-01-19 | 発光装置 |
EP15159847.1A EP2924745B1 (en) | 2014-03-28 | 2015-03-19 | Light emitting device |
US14/663,456 US9698318B2 (en) | 2014-03-28 | 2015-03-20 | Light emitting device |
CN201510137114.5A CN104953008B (zh) | 2014-03-28 | 2015-03-26 | 发光装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014067685 | 2014-03-28 | ||
JP2014067685 | 2014-03-28 | ||
JP2015007975A JP6592902B2 (ja) | 2014-03-28 | 2015-01-19 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015195349A JP2015195349A (ja) | 2015-11-05 |
JP6592902B2 true JP6592902B2 (ja) | 2019-10-23 |
Family
ID=52697244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015007975A Active JP6592902B2 (ja) | 2014-03-28 | 2015-01-19 | 発光装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9698318B2 (ja) |
EP (1) | EP2924745B1 (ja) |
JP (1) | JP6592902B2 (ja) |
CN (1) | CN104953008B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6419121B1 (en) | 2001-02-20 | 2002-07-16 | Nestec, S.A. | Dispensing device and method for rapidly heating and delivering a flowable product |
US9780268B2 (en) * | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
JP7005186B2 (ja) * | 2017-06-28 | 2022-01-21 | 京セラ株式会社 | 電子素子実装用基板、電子装置および電子モジュール |
EP3503225B1 (en) * | 2017-12-22 | 2021-04-07 | Nichia Corporation | Light emitting device |
WO2023237505A1 (en) * | 2022-06-08 | 2023-12-14 | Signify Holding B.V. | Use of ksf phosphor in leds with wire-bonds with maximum amount of silver |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04107861U (ja) * | 1991-02-28 | 1992-09-17 | サンケン電気株式会社 | 発光表示装置 |
JP2948412B2 (ja) * | 1992-05-08 | 1999-09-13 | ローム株式会社 | 側面発光型の半導体発光素子を製造する方法 |
JPH06177424A (ja) * | 1992-12-03 | 1994-06-24 | Rohm Co Ltd | 発光ダイオードランプおよび集合型発光ダイオード表示装置 |
JP2605856Y2 (ja) * | 1993-01-12 | 2000-08-21 | 株式会社シチズン電子 | 発光ダイオード |
JPH10190063A (ja) * | 1996-12-25 | 1998-07-21 | Sharp Corp | 半導体発光素子および半導体発光装置 |
JP3993302B2 (ja) | 1998-05-20 | 2007-10-17 | ローム株式会社 | 半導体装置 |
US6486543B1 (en) | 1998-05-20 | 2002-11-26 | Rohm Co., Ltd. | Packaged semiconductor device having bent leads |
JP2000208822A (ja) * | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP3399440B2 (ja) * | 1999-04-26 | 2003-04-21 | 松下電器産業株式会社 | 複合発光素子と発光装置及びその製造方法 |
JP3868675B2 (ja) * | 1999-08-19 | 2007-01-17 | ローム株式会社 | 半導体発光装置の製造方法 |
EP1622237A1 (de) * | 2004-07-28 | 2006-02-01 | Infineon Technologies Fiber Optics GmbH | Optisches oder elektronisches Modul und Verfahren zu dessen Herstellung |
TWI389337B (zh) * | 2005-05-12 | 2013-03-11 | Panasonic Corp | 發光裝置與使用其之顯示裝置及照明裝置,以及發光裝置之製造方法 |
JP2008041841A (ja) | 2006-08-03 | 2008-02-21 | Sharp Corp | 半導体発光装置および半導体発光装置の製造方法 |
JP4205135B2 (ja) * | 2007-03-13 | 2009-01-07 | シャープ株式会社 | 半導体発光装置、半導体発光装置用多連リードフレーム |
JP4869275B2 (ja) | 2007-03-26 | 2012-02-08 | 三菱電機株式会社 | 光源モジュール及び発光装置 |
JP5158472B2 (ja) * | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
JP5132234B2 (ja) * | 2007-09-25 | 2013-01-30 | 三洋電機株式会社 | 発光モジュール |
JP4796031B2 (ja) | 2007-09-28 | 2011-10-19 | パナソニック株式会社 | 車両前照灯光源および車両前照灯 |
JP4874220B2 (ja) | 2007-12-18 | 2012-02-15 | サンユレック株式会社 | 発光装置の製造方法および発光装置の製造装置 |
JP2011181888A (ja) * | 2010-02-03 | 2011-09-15 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
DE102010021791A1 (de) * | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds |
DE102010023815A1 (de) * | 2010-06-15 | 2011-12-15 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements |
DE102010030639B4 (de) * | 2010-06-29 | 2013-05-02 | Osram Gmbh | Leuchtvorrichtung mit beweglichem Konverterelement |
US8232574B2 (en) * | 2010-10-28 | 2012-07-31 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting package with a mechanical latch |
KR20120061376A (ko) * | 2010-12-03 | 2012-06-13 | 삼성엘이디 주식회사 | 반도체 발광 소자에 형광체를 도포하는 방법 |
JP2013033909A (ja) * | 2011-06-29 | 2013-02-14 | Hitachi Cable Ltd | 発光素子搭載用基板及びledパッケージ |
JPWO2013011628A1 (ja) | 2011-07-19 | 2015-02-23 | パナソニック株式会社 | 発光装置及びその製造方法 |
JP2013239644A (ja) * | 2012-05-16 | 2013-11-28 | Toshiba Corp | 半導体発光装置 |
CN102795005B (zh) | 2012-07-09 | 2015-12-02 | 厦门飞德利照明科技有限公司 | 一种led模组的荧光粉丝网印刷工艺 |
-
2015
- 2015-01-19 JP JP2015007975A patent/JP6592902B2/ja active Active
- 2015-03-19 EP EP15159847.1A patent/EP2924745B1/en active Active
- 2015-03-20 US US14/663,456 patent/US9698318B2/en active Active
- 2015-03-26 CN CN201510137114.5A patent/CN104953008B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015195349A (ja) | 2015-11-05 |
CN104953008B (zh) | 2018-02-09 |
EP2924745B1 (en) | 2020-04-22 |
US9698318B2 (en) | 2017-07-04 |
CN104953008A (zh) | 2015-09-30 |
US20150280082A1 (en) | 2015-10-01 |
EP2924745A1 (en) | 2015-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6592902B2 (ja) | 発光装置 | |
JP7054025B2 (ja) | 発光装置 | |
JP5648422B2 (ja) | 発光装置及びその製造方法 | |
JP6519135B2 (ja) | 発光装置及び発光装置用基板 | |
JP2012099544A (ja) | 発光装置の製造方法 | |
US9722156B2 (en) | Light-emitting device | |
JP2015220446A (ja) | 発光装置及びその製造方法 | |
TWI738203B (zh) | 發光裝置 | |
US11244931B2 (en) | Light emitting device with enhanced color mixing quality | |
JP6579141B2 (ja) | 発光装置および発光装置の製造方法 | |
JP6476703B2 (ja) | セラミックスパッケージ、発光装置及びそれらの製造方法 | |
KR20090082470A (ko) | 발광 장치, 그 제조 방법 및 실장 기판 | |
US11056623B2 (en) | Light-emitting device and method of manufacturing light-emitting device | |
JP2015092622A (ja) | 発光装置 | |
US11552227B2 (en) | Method of manufacturing light emitting device, and light emitting device | |
WO2013035529A1 (ja) | 発光装置 | |
JP6787435B2 (ja) | 発光装置 | |
KR100772647B1 (ko) | 반도체 패키지 및 그의 제조방법 | |
JP7104348B2 (ja) | 発光装置 | |
JP6974702B2 (ja) | 半導体発光装置の製造方法 | |
JP2018073975A (ja) | 発光装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171205 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180822 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181002 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190403 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190827 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190909 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6592902 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |