JP6567636B2 - 基板加工方法 - Google Patents
基板加工方法 Download PDFInfo
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- JP6567636B2 JP6567636B2 JP2017238753A JP2017238753A JP6567636B2 JP 6567636 B2 JP6567636 B2 JP 6567636B2 JP 2017238753 A JP2017238753 A JP 2017238753A JP 2017238753 A JP2017238753 A JP 2017238753A JP 6567636 B2 JP6567636 B2 JP 6567636B2
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Description
Claims (13)
- 少なくとも1つの分割線(22)が形成された第1面(2a)と、前記第1面(2a)とは反対の第2面(2b)と、を有する基板(2)を加工する方法であって、前記方法は、
前記第1面(2a)側から前記基板(2)にパルスレーザビーム(LB)を照射するステップであって、前記基板(2)は、前記パルスレーザビーム(LB)に対して透明な材料で作られ、前記パルスレーザビーム(LB)は、前記基板(2)の内部に複数の改質領域(23)が形成され、各改質領域(23)が、前記第1面(2a)または前記第2面(2b)に開口する開口部を形成することなく、完全に前記基板(2)のバルク内部に配置されるように、前記パルスレーザビーム(LB)の焦点位置(P)が前記第1面(2a)から前記第2面(2b)に向かう方向において前記第1面(2a)から離れて配置された状態で、前記少なくとも1つの分割線(22)に沿った少なくとも複数の位置で前記基板(2)に照射される、ステップと、
完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って基板材料を除去するステップと、
を含み、
前記複数の改質領域は、隣接する改質領域が前記少なくとも1つの分割線の延びる方向に重ならないように、前記少なくとも1つの分割線に沿って前記基板の内部に形成される、方法。 - 前記基板(2)は、単結晶基板またはガラス基板または化合物基板である、請求項1に記載の方法。
- 前記改質領域(23)は、アモルファス領域またはクラックが形成された領域を含む、または前記改質領域(23)は、アモルファス領域またはクラックが形成された領域である、請求項1または2に記載の方法。
- 完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って前記基板(2)を切断することによって、前記基板材料を除去する、請求項1から3のいずれか一項に記載の方法。
- 特に、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って、前記基板(2)を機械的に切断することによって、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って、前記基板材料が機械的に除去される、請求項1から4のいずれか一項に記載の方法。
- 前記基板の厚さを調節するために、前記基板(2)の前記第2面(2b)を研削するステップをさらに含む、請求項1から5のいずれか一項に記載の方法。
- 前記基板(2)の前記第2面(2b)を研削するステップが、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って前記基板材料を除去するステップの後に行われる、請求項6に記載の方法。
- 前記基板(2)の前記第1面(2a)から前記第2面(2b)に向かう方向における厚さの一部のみに沿って前記基板材料が除去され、
前記基板(2)の前記第2面(2b)を研削するステップが、前記少なくとも1つの分割線(22)に沿って前記基板(2)を分割するように、基板材料を除去していない前記基板(2)の前記厚さのうちの残りの部分に沿って行われる、
請求項7に記載の方法。 - 前記パルスレーザビーム(LB)が照射され複数の改質領域(23)が形成された前記少なくとも1つの分割線(22)に沿った前記複数の位置のそれぞれにおいて、各改質領域(23)は、完全に前記基板(2)の前記バルク内部に配置され、前記複数の改質領域(23)は、前記第1面(2a)から前記第2面(2b)に向かう方向に沿って互いに隣接するように配置される、請求項1から8のいずれか一項に記載の方法。
- 前記基板材料は、前記第1面(2a)から前記第2面(2b)に向かう方向において前記改質領域(23)の全長に沿って、除去される、請求項1から9のいずれか一項に記載の方法。
- 前記少なくとも1つの分割線(22)は、前記少なくとも1つの分割線(22)の延びる方向に対して実質的に垂直な方向に幅(w)を有し、
前記方法は、前記分割線の前記幅(w)内に複数列の改質領域(23)が形成され、各列が前記少なくとも1つの分割線(22)の前記延びる方向に沿って延びるように、前記少なくとも1つの分割線(22)の前記幅方向に沿った複数の位置にも前記パルスレーザビーム(LB)を照射するステップであって、前記列は、前記少なくとも1つの分割線(22)の前記幅方向において、互いに隣接して配置される、ステップをさらに含む、
請求項1から10のいずれか一項に記載の方法。 - 切断手段(6、6’)を用いて前記基板(2)を機械的に切断することによって、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って前記基板材料が除去され、
複数列の改質領域(23)が形成されている前記基板(2)の領域の、前記少なくとも1つの分割線(22)の延びる方向に対して実質的に垂直な方向における幅は、前記少なくとも1つの分割線(22)の延びる方向に実質的に垂直な方向における、前記切断手段(6、6’)の幅の約90%から110%の範囲にある、
請求項11に記載の方法。 - 前記少なくとも1つの分割線(22)の前記幅方向において、前記少なくとも1つの分割線(22)の中央のより近くに配置された改質領域(23)の列または複数の列は、前記少なくとも1つの分割線(22)の前記幅方向において、前記少なくとも1つの分割線(22)の中央からより離れて配置された改質領域(23)の列または複数の列を形成するために使用されるパルスレーザビーム(LB)よりも高出力のパルスレーザビーム(LB)で形成される、請求項11または12に記載の方法。
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