JP2018129504A - 基板加工方法 - Google Patents
基板加工方法 Download PDFInfo
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- JP2018129504A JP2018129504A JP2017238753A JP2017238753A JP2018129504A JP 2018129504 A JP2018129504 A JP 2018129504A JP 2017238753 A JP2017238753 A JP 2017238753A JP 2017238753 A JP2017238753 A JP 2017238753A JP 2018129504 A JP2018129504 A JP 2018129504A
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Abstract
【解決手段】分割線22が形成された第1面2aと、第1面とは反対の第2面2bと、を有する基板2を加工する方法において、第1面側から基板にパルスレーザビームを照射する。基板は、パルスレーザビームに対して透明な材料で作られている。パルスレーザビームは、基板2の内部に複数の改質領域23を形成するように、パルスレーザビームの焦点位置が第1面から第2面に向かう方向において第1面から離れて配置された状態で、少なくとも1つの分割線22に沿った少なくとも複数の位置で基板に照射される。各改質領域が、第1面または第2面に開口する開口部を形成することなく、完全に基板のバルク内部に配置され、完全に基板のバルク内部に配置された改質領域が存在する少なくとも1つの分割線に沿って基板材料を除去する。
【選択図】図7
Description
Claims (13)
- 少なくとも1つの分割線(22)が形成された第1面(2a)と、前記第1面(2a)とは反対の第2面(2b)と、を有する基板(2)を加工する方法であって、前記方法は、
前記第1面(2a)側から前記基板(2)にパルスレーザビーム(LB)を照射するステップであって、前記基板(2)は、前記パルスレーザビーム(LB)に対して透明な材料で作られ、前記パルスレーザビーム(LB)は、前記基板(2)の内部に複数の改質領域(23)が形成され、各改質領域(23)が、前記第1面(2a)または前記第2面(2b)に開口する開口部を形成することなく、完全に前記基板(2)のバルク内部に配置されるように、前記パルスレーザビーム(LB)の焦点位置(P)が前記第1面(2a)から前記第2面(2b)に向かう方向において前記第1面(2a)から離れて配置された状態で、前記少なくとも1つの分割線(22)に沿った少なくとも複数の位置で前記基板(2)に照射される、ステップと、
完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って基板材料を除去するステップと、
を含む、方法。 - 前記基板(2)は、単結晶基板またはガラス基板または化合物基板である、請求項1に記載の方法。
- 前記改質領域(23)は、アモルファス領域またはクラックが形成された領域を含む、または前記改質領域(23)は、アモルファス領域またはクラックが形成された領域である、請求項1または2に記載の方法。
- 完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って前記基板(2)を切断することによって、前記基板材料を除去する、請求項1から3のいずれか一項に記載の方法。
- 特に、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って、前記基板(2)を機械的に切断することによって、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って、前記基板材料が機械的に除去される、請求項1から4のいずれか一項に記載の方法。
- 前記基板の厚さを調節するために、前記基板(2)の前記第2面(2b)を研削するステップをさらに含む、請求項1から5のいずれか一項に記載の方法。
- 前記基板(2)の前記第2面(2b)を研削するステップが、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って前記基板材料を除去するステップの後に行われる、請求項6に記載の方法。
- 前記基板(2)の前記第1面(2a)から前記第2面(2b)に向かう方向における厚さの一部のみに沿って前記基板材料が除去され、
前記基板(2)の前記第2面(2b)を研削するステップが、前記少なくとも1つの分割線(22)に沿って前記基板(2)を分割するように、基板材料を除去していない前記基板(2)の前記厚さのうちの残りの部分に沿って行われる、
請求項7に記載の方法。 - 前記パルスレーザビーム(LB)が照射され複数の改質領域(23)が形成された前記少なくとも1つの分割線(22)に沿った前記複数の位置のそれぞれにおいて、各改質領域(23)は、完全に前記基板(2)の前記バルク内部に配置され、前記複数の改質領域(23)は、前記第1面(2a)から前記第2面(2b)に向かう方向に沿って互いに隣接するように配置される、請求項1から8のいずれか一項に記載の方法。
- 前記基板材料は、前記第1面(2a)から前記第2面(2b)に向かう方向において前記改質領域(23)の全長に沿って、除去される、請求項1から9のいずれか一項に記載の方法。
- 前記少なくとも1つの分割線(22)は、前記少なくとも1つの分割線(22)の延びる方向に対して実質的に垂直な方向に幅(w)を有し、
前記方法は、前記分割線の前記幅(w)内に複数列の改質領域(23)が形成され、各列が前記少なくとも1つの分割線(22)の前記延びる方向に沿って延びるように、前記少なくとも1つの分割線(22)の前記幅方向に沿った複数の位置にも前記パルスレーザビーム(LB)を照射するステップであって、前記列は、前記少なくとも1つの分割線(22)の前記幅方向において、互いに隣接して配置される、ステップをさらに含む、
請求項1から10のいずれか一項に記載の方法。 - 切断手段(6、6’)を用いて前記基板(2)を機械的に切断することによって、完全に前記基板(2)の前記バルク内部に配置された前記改質領域(23)が存在する前記少なくとも1つの分割線(22)に沿って前記基板材料が除去され、
複数列の改質領域(23)が形成されている前記基板(2)の領域の、前記少なくとも1つの分割線(22)の延びる方向に対して実質的に垂直な方向における幅は、前記少なくとも1つの分割線(22)の延びる方向に実質的に垂直な方向における、前記切断手段(6、6’)の幅の約90%から110%の範囲にある、
請求項11に記載の方法。 - 前記少なくとも1つの分割線(22)の前記幅方向において、前記少なくとも1つの分割線(22)の中央のより近くに配置された改質領域(23)の列または複数の列は、前記少なくとも1つの分割線(22)の前記幅方向において、前記少なくとも1つの分割線(22)の中央からより離れて配置された改質領域(23)の列または複数の列を形成するために使用されるパルスレーザビーム(LB)よりも高出力のパルスレーザビーム(LB)で形成される、請求項11または12に記載の方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020009231A1 (ja) | 2018-07-06 | 2020-01-09 | 国立大学法人名古屋大学 | トランス脂肪酸含有油脂を分解する新規リパーゼ |
JP2020027853A (ja) * | 2018-08-10 | 2020-02-20 | ローム株式会社 | SiC半導体装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016224978B4 (de) | 2016-12-14 | 2022-12-29 | Disco Corporation | Substratbearbeitungsverfahren |
DE102017200631B4 (de) * | 2017-01-17 | 2022-12-29 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
US20190363018A1 (en) * | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
WO2019244742A1 (ja) * | 2018-06-18 | 2019-12-26 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
DE202019005592U1 (de) * | 2019-01-22 | 2021-02-08 | Hegla Gmbh & Co. Kg | Vorrichtung zum Bearbeiten und zum Trennen einer Verbundsicherheitsglastafel |
DE102019204457B4 (de) * | 2019-03-29 | 2024-01-25 | Disco Corporation | Substratbearbeitungsverfahren |
KR102270780B1 (ko) * | 2019-04-30 | 2021-06-30 | 세메스 주식회사 | 막질 제거 방법, 기판 처리 방법 및 기판 처리 장치 |
DE102019006095A1 (de) * | 2019-08-29 | 2021-03-04 | Azur Space Solar Power Gmbh | Vereinzelungsverfahren zur Vereinzelung einer mehrere Solarzellenstapel umfasssenden Halbleiterscheibe |
JP7378894B2 (ja) * | 2019-11-06 | 2023-11-14 | 株式会社ディスコ | 加工装置 |
CN113103071B (zh) * | 2021-03-22 | 2022-05-27 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其磨边方法 |
DE102023200718A1 (de) | 2023-01-30 | 2024-08-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zum laserbasierten vereinzeln von mikrochips auf strukturierten substraten |
DE102023108751B3 (de) | 2023-04-05 | 2024-05-29 | Infineon Technologies Ag | Verfahren zum trennen von dies von einem halbleitersubstrat |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003338468A (ja) * | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子 |
JP2005184032A (ja) * | 2002-03-12 | 2005-07-07 | Hamamatsu Photonics Kk | 基板の分割方法 |
JP2008147412A (ja) * | 2006-12-11 | 2008-06-26 | Matsushita Electric Ind Co Ltd | 半導体ウェハ,半導体装置及び半導体ウェハの製造方法ならびに半導体装置の製造方法 |
JP2012146874A (ja) * | 2011-01-13 | 2012-08-02 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2013055120A (ja) * | 2011-09-01 | 2013-03-21 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
JP2016054205A (ja) * | 2014-09-03 | 2016-04-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016163016A (ja) * | 2015-03-05 | 2016-09-05 | 株式会社ディスコ | デバイスチップの製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
JP2002100588A (ja) | 2000-09-22 | 2002-04-05 | Shinkawa Ltd | 半導体装置の製造方法 |
JP2004351477A (ja) | 2003-05-29 | 2004-12-16 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2005064231A (ja) | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
US7008861B2 (en) | 2003-12-11 | 2006-03-07 | Cree, Inc. | Semiconductor substrate assemblies and methods for preparing and dicing the same |
US9138913B2 (en) * | 2005-09-08 | 2015-09-22 | Imra America, Inc. | Transparent material processing with an ultrashort pulse laser |
US20070155131A1 (en) | 2005-12-21 | 2007-07-05 | Intel Corporation | Method of singulating a microelectronic wafer |
CN102623373B (zh) | 2007-05-25 | 2015-07-15 | 浜松光子学株式会社 | 切断用加工方法 |
JP2009206162A (ja) * | 2008-02-26 | 2009-09-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2011210915A (ja) | 2010-03-30 | 2011-10-20 | Shindengen Electric Mfg Co Ltd | 単結晶基板の切断装置、および単結晶基板の切断方法 |
TWI500118B (zh) | 2010-11-12 | 2015-09-11 | Semiconductor Energy Lab | 半導體基底之製造方法 |
JP5140198B1 (ja) * | 2011-07-27 | 2013-02-06 | 東芝機械株式会社 | レーザダイシング方法 |
US8845854B2 (en) * | 2012-07-13 | 2014-09-30 | Applied Materials, Inc. | Laser, plasma etch, and backside grind process for wafer dicing |
US8809166B2 (en) * | 2012-12-20 | 2014-08-19 | Nxp B.V. | High die strength semiconductor wafer processing method and system |
TWI543833B (zh) * | 2013-01-28 | 2016-08-01 | 先進科技新加坡有限公司 | 將半導體基板輻射開槽之方法 |
JP2017005158A (ja) | 2015-06-12 | 2017-01-05 | 株式会社ディスコ | ウエーハの裏面研削方法 |
JP2017005160A (ja) | 2015-06-12 | 2017-01-05 | 古河電気工業株式会社 | ウエハ加工用テープ |
DE102016215473B4 (de) | 2015-09-10 | 2023-10-26 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
DE102017201151B4 (de) | 2016-02-01 | 2024-05-08 | Disco Corporation | Verfahren zum Bearbeiten eines Substrats |
DE102016224978B4 (de) | 2016-12-14 | 2022-12-29 | Disco Corporation | Substratbearbeitungsverfahren |
-
2016
- 2016-12-14 DE DE102016224978.9A patent/DE102016224978B4/de active Active
-
2017
- 2017-12-13 JP JP2017238753A patent/JP6567636B2/ja active Active
- 2017-12-13 TW TW106143766A patent/TWI689365B/zh active
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- 2017-12-14 CN CN201711336976.6A patent/CN108231658B/zh active Active
- 2017-12-14 KR KR1020170172459A patent/KR102065829B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003338468A (ja) * | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子 |
JP2005184032A (ja) * | 2002-03-12 | 2005-07-07 | Hamamatsu Photonics Kk | 基板の分割方法 |
JP2008147412A (ja) * | 2006-12-11 | 2008-06-26 | Matsushita Electric Ind Co Ltd | 半導体ウェハ,半導体装置及び半導体ウェハの製造方法ならびに半導体装置の製造方法 |
JP2012146874A (ja) * | 2011-01-13 | 2012-08-02 | Hamamatsu Photonics Kk | レーザ加工方法 |
JP2013055120A (ja) * | 2011-09-01 | 2013-03-21 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
JP2016054205A (ja) * | 2014-09-03 | 2016-04-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016163016A (ja) * | 2015-03-05 | 2016-09-05 | 株式会社ディスコ | デバイスチップの製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020009231A1 (ja) | 2018-07-06 | 2020-01-09 | 国立大学法人名古屋大学 | トランス脂肪酸含有油脂を分解する新規リパーゼ |
JP2020027853A (ja) * | 2018-08-10 | 2020-02-20 | ローム株式会社 | SiC半導体装置 |
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