JP6564329B2 - 受光モジュールおよび受光モジュールの製造方法 - Google Patents
受光モジュールおよび受光モジュールの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 85
- 238000007789 sealing Methods 0.000 claims description 45
- 238000001514 detection method Methods 0.000 claims description 37
- 230000000149 penetrating effect Effects 0.000 claims description 4
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- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 238000004382 potting Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/0203—Making porous regions on the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (8)
- 第1表面と、前記第1表面とは反対側の第2表面と、前記第1表面に設けられた電極部と、前記第1表面および前記第2表面を接続する端面に設けられ、前記電極部に電気的に接続された端子部と、を有する基板と、
前記基板の前記第1表面に対面するように設けられ、前記第1表面との間に設けられたバンプを介して前記基板の前記電極部に電気的に接続される半導体受光素子と、
前記半導体受光素子と前記基板の前記第1表面との間隙であって前記バンプの周囲に充填されるアンダーフィルと、
前記基板の前記第1表面側に設けられて前記半導体受光素子を封止し、所定波長の光に対して遮光性を有する第1樹脂部と、
前記基板の前記第2表面側に設けられて前記第2表面の全体を覆い、前記所定波長の光に対して光学的に透明な第2樹脂部と、を備え、
前記基板には、前記基板を厚さ方向に貫通する貫通穴が設けられ、
前記半導体受光素子は、前記半導体受光素子の光検出領域が前記貫通穴に対面するように配置され、
前記厚さ方向に直交する第1方向における前記基板の長さは、前記第1方向における前記第1樹脂部の長さよりも大きく、前記基板は、前記第1樹脂部から前記第1方向に突出する鍔部を有し、前記鍔部は、前記第1表面の露出部分と前記端子部が設けられた前記端面とを含み、
前記第2樹脂部は、前記基板の前記貫通穴内に突出する突出部を有し、前記突出部は、前記半導体受光素子の前記光検出領域を被覆する、受光モジュール。 - 前記第1方向における前記第2樹脂部の長さは、前記第1方向における前記基板の長さと等しく、前記第1方向における前記第2樹脂部の端面は、前記第1方向における前記基板の端面に面一に連続している、請求項1に記載の受光モジュール。
- 前記厚さ方向および前記第1方向の両方に直交する第2方向における前記第2樹脂部の長さは、前記第2方向における前記基板の長さと等しく、前記第2方向における前記第2樹脂部の端面は、前記第2方向における前記基板の端面に面一に連続している、請求項1または2に記載の受光モジュール。
- 前記貫通穴は、前記第2表面側から前記第1表面側に向かうにつれて細くなるテーパー状である、請求項1〜3のいずれか一項に記載の受光モジュール。
- 前記第2樹脂部において、前記第2表面を覆う面と反対側の露出面は、フレネルレンズ形状をなしている、請求項1〜4のいずれか一項に記載の受光モジュール。
- 前記基板の前記第2表面は、前記所定波長の光を反射させる反射面である、請求項1〜5のいずれか一項に記載の受光モジュール。
- 対向する第1表面と第2表面とを有する基板であって、前記第1表面に複数の電極部が設けられ、前記電極部に電気的に接続されて前記第1表面から厚さ方向に延びる複数の端子部が設けられ、前記厚さ方向に貫通する複数の貫通穴が設けられた前記基板を用意する工程と、
前記基板の前記第1表面に対面し且つ前記貫通穴を覆うように複数の半導体受光素子を配置し、前記第1表面と前記半導体受光素子との間にバンプを設け、前記半導体受光素子をボンディングして前記電極部に前記半導体受光素子を電気的に接続する工程と、
前記半導体受光素子と前記基板の前記第1表面との間隙であって前記バンプの周囲に充填されたアンダーフィルを形成する工程と、
前記基板の前記第1表面側において、所定波長の光に対して遮光性を有する第1樹脂を用いて前記第1表面および前記半導体受光素子を封止し、第1封止樹脂部を形成する工程と、
前記基板の前記第2表面側において、前記所定波長の光に対して光学的に透明な第2樹脂を用いて前記第2表面の全体を封止し、第2封止樹脂部を形成する工程と、
前記第1封止樹脂部の一部を取り除いて前記第1表面の一部を露出させると共に前記複数の端子部を露出させる工程と、
前記半導体受光素子が設けられていない領域を通る第1ラインと、前記第1表面の露出部分を通る第2ラインと、においてそれぞれダイシングを行い、前記基板を個片化する工程と、を含み、
前記半導体受光素子を電気的に接続する工程では、半導体受光素子の光検出領域が前記貫通穴に対面するように前記半導体受光素子を配置し、
前記第2封止樹脂部を形成する工程では、前記基板の前記貫通穴内に前記第2樹脂を流入させ、さらに前記半導体受光素子の前記光検出領域を前記第2樹脂で被覆する、受光モジュールの製造方法。 - 前記基板を用意する工程では、複数の前記基板を重ね合わせた状態で穴開けを行うことにより、1回の穴開けに対して同一の柱状の前記貫通穴を複数形成する、請求項7に記載の受光モジュールの製造方法。
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JP2016010080A JP6564329B2 (ja) | 2016-01-21 | 2016-01-21 | 受光モジュールおよび受光モジュールの製造方法 |
CN201680079448.4A CN108475705B (zh) | 2016-01-21 | 2016-11-21 | 受光模块及受光模块的制造方法 |
PCT/JP2016/084495 WO2017126213A1 (ja) | 2016-01-21 | 2016-11-21 | 受光モジュールおよび受光モジュールの製造方法 |
KR1020187023032A KR102559339B1 (ko) | 2016-01-21 | 2016-11-21 | 수광 모듈 및 수광 모듈의 제조 방법 |
TW105139631A TWI714678B (zh) | 2016-01-21 | 2016-12-01 | 受光模組及受光模組之製造方法 |
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JP6775641B1 (ja) * | 2019-06-18 | 2020-10-28 | Nttエレクトロニクス株式会社 | 受光素子および光回路の遮光構造 |
JP2023087210A (ja) * | 2021-12-13 | 2023-06-23 | 浜松ホトニクス株式会社 | 光半導体パッケージ及び光半導体パッケージの製造方法 |
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JP2003309271A (ja) * | 2002-04-18 | 2003-10-31 | Matsushita Electric Ind Co Ltd | 集積回路素子の実装構造および実装方法 |
TWI278991B (en) * | 2002-07-09 | 2007-04-11 | Toppan Printing Co Ltd | Solid image-pickup device and method of manufacturing the same |
JP4537758B2 (ja) * | 2003-11-11 | 2010-09-08 | 株式会社リコー | 光伝送素子モジュール |
JP2005303081A (ja) * | 2004-04-13 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 光センサーおよび固体撮像装置 |
JP4359201B2 (ja) * | 2004-07-26 | 2009-11-04 | シャープ株式会社 | 光半導体装置、光コネクタおよび電子機器 |
JP4184371B2 (ja) * | 2005-10-03 | 2008-11-19 | 日本テキサス・インスツルメンツ株式会社 | 半導体チップ、半導体装置およびそれらの製造方法 |
JP2007201091A (ja) * | 2006-01-25 | 2007-08-09 | Fujifilm Corp | 固体撮像素子の製造方法 |
EP1879230A1 (en) * | 2006-07-10 | 2008-01-16 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method of the same |
US7907801B2 (en) * | 2007-01-17 | 2011-03-15 | Ibiden Co., Ltd. | Optical element, package substrate and device for optical communication |
JP2008226895A (ja) * | 2007-03-08 | 2008-09-25 | New Japan Radio Co Ltd | 光半導体装置およびその製造方法 |
JP5440010B2 (ja) * | 2008-09-09 | 2014-03-12 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
CN103681728B (zh) * | 2012-09-20 | 2018-04-24 | 索尼公司 | 固体摄像装置及其方法以及电子设备 |
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KR102559339B1 (ko) | 2023-07-25 |
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JP2017130586A (ja) | 2017-07-27 |
TWI714678B (zh) | 2021-01-01 |
CN108475705B (zh) | 2021-07-13 |
WO2017126213A1 (ja) | 2017-07-27 |
TW201733141A (zh) | 2017-09-16 |
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