JP6561093B2 - シリコン酸化膜を除去する方法 - Google Patents
シリコン酸化膜を除去する方法 Download PDFInfo
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- JP6561093B2 JP6561093B2 JP2017142746A JP2017142746A JP6561093B2 JP 6561093 B2 JP6561093 B2 JP 6561093B2 JP 2017142746 A JP2017142746 A JP 2017142746A JP 2017142746 A JP2017142746 A JP 2017142746A JP 6561093 B2 JP6561093 B2 JP 6561093B2
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- gas
- chamber
- silicon oxide
- oxide film
- workpiece
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- 238000000034 method Methods 0.000 title claims description 141
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 60
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 60
- 239000007789 gas Substances 0.000 claims description 172
- 238000012545 processing Methods 0.000 claims description 94
- 230000001681 protective effect Effects 0.000 claims description 38
- 239000011261 inert gas Substances 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 19
- 238000010926 purge Methods 0.000 claims description 11
- 238000003486 chemical etching Methods 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 238000000992 sputter etching Methods 0.000 claims description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229940070337 ammonium silicofluoride Drugs 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 230000008569 process Effects 0.000 description 102
- 238000002474 experimental method Methods 0.000 description 22
- 230000007246 mechanism Effects 0.000 description 18
- 238000011156 evaluation Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- 238000012546 transfer Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 1
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/76841—Barrier, adhesion or liner layers
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- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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- Electrodes Of Semiconductors (AREA)
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Description
・サイクルCYの実行回数:50回
・工程ST11:
CH3Fガスの流量:40sccm
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
・工程ST13:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
高周波電源61の高周波:40MHz、150W
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
・サイクルCYの実行回数:10回
・工程ST11:
C3H6ガスの流量:40sccm
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
・工程ST13:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
高周波電源61の高周波:40MHz、150W
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
<第2の評価実験における工程ST3の条件>
・工程ST31及び工程ST32を含むサイクルの実行回数:3回
・各サイクルにおける工程ST31の条件
HFガスの流量:150sccm
NH3ガスの流量:90sccm
Arガスの流量:225sccm
N2ガスの流量:225sccm
チャンバの圧力:450mTorr(60Pa)
ステージ164の温度:85℃
処理時間:6秒
・各サイクルにおける工程ST32の条件
工程ST32A:パージ工程
NH3ガスの流量:90sccm
Arガスの流量:225sccm
N2ガスの流量: 225sccm
ステージ164の温度:85℃
処理時間:5秒
工程ST32B:パージ工程
チャンバ:真空引き
ガスの通流: 無し
処理時間:30秒
Claims (9)
- 被加工物のシリコン酸化膜を除去する方法であって、該被加工物は、絶縁膜、及び、該絶縁膜に形成された開口の底部において露出された前記シリコン酸化膜を有し、
前記被加工物の表面上に炭素を含有する保護膜を形成する工程であり、前記保護膜は、前記開口を画成する前記絶縁膜の側壁面に沿って延在する第1領域、及び、前記シリコン酸化膜上で延在する第2領域を有する、該工程と、
不活性ガスのプラズマからのイオンによるスパッタエッチングにより前記保護膜の前記第2領域と前記シリコン酸化膜を除去する工程と、
化学的エッチングにより前記シリコン酸化膜の残渣を除去する工程と、
を含み、
保護膜を形成する前記工程は、前記被加工物がチャンバ内に配置された状態で実行され、
保護膜を形成する前記工程では、
前記チャンバに炭素含有ガスを供給することにより前記被加工物の表面上に炭素含有の前駆体層を形成する工程と、
前記チャンバをパージする工程と、
前記チャンバ内において不活性ガスのプラズマを生成することにより、前記前駆体層に含まれる不純物の量を低減させる工程と、
前記チャンバをパージする工程と、
を各々が含む複数回のサイクルが実行される、
方法。 - 前記炭素含有ガスは、ハイドロフルオロカーボンガスである、請求項1に記載の方法。
- 前記炭素含有ガスは、CH3Fガスである、請求項2に記載の方法。
- 前記炭素含有ガスは、炭化水素ガスである、請求項1に記載の方法。
- 前駆体層を形成する前記工程において、塩素ガス及び水素ガスのうち少なくとも一方が前記チャンバに更に供給される、請求項1〜4の何れか一項に記載の方法。
- 不純物の量を低減させる前記工程において用いられる前記不活性ガスは、希ガスである、請求項1〜5の何れか一項に記載の方法。
- 前記保護膜の前記第2領域及び前記シリコン酸化膜を除去する前記工程において用いられる前記不活性ガスは、希ガスである、請求項1〜6の何れか一項に記載の方法。
- 前記シリコン酸化膜の残渣を除去する前記工程は、
前記シリコン酸化膜の前記残渣に処理ガスを供給することにより、前記シリコン酸化膜の前記残渣から変質領域を形成する工程であり、該変質領域はケイフッ化アンモニウムを含む、該工程と、
前記変質領域を有する前記被加工物を加熱することにより、前記変質領域を除去する工程と、
を含む、請求項1〜7の何れか一項に記載の方法。 - 前記処理ガスは、HFガス及びNH3ガスを含む、請求項8に記載の方法。
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JP2017142746A JP6561093B2 (ja) | 2017-07-24 | 2017-07-24 | シリコン酸化膜を除去する方法 |
KR1020180080454A KR102149082B1 (ko) | 2017-07-24 | 2018-07-11 | 실리콘 산화막을 제거하는 방법 |
US16/038,863 US10546753B2 (en) | 2017-07-24 | 2018-07-18 | Method of removing silicon oxide film |
TW107125082A TW201921501A (zh) | 2017-07-24 | 2018-07-20 | 去除矽氧化膜之方法 |
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JP2017142746A JP6561093B2 (ja) | 2017-07-24 | 2017-07-24 | シリコン酸化膜を除去する方法 |
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JP (1) | JP6561093B2 (ja) |
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US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
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US20100216296A1 (en) | 2005-10-27 | 2010-08-26 | Yusuke Muraki | Processing Method and Recording Medium |
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JP2019024043A (ja) | 2019-02-14 |
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KR20190011192A (ko) | 2019-02-01 |
US10546753B2 (en) | 2020-01-28 |
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