JP6555953B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP6555953B2 JP6555953B2 JP2015140129A JP2015140129A JP6555953B2 JP 6555953 B2 JP6555953 B2 JP 6555953B2 JP 2015140129 A JP2015140129 A JP 2015140129A JP 2015140129 A JP2015140129 A JP 2015140129A JP 6555953 B2 JP6555953 B2 JP 6555953B2
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- oxide semiconductor
- insulating film
- oxide
- transistor
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- 239000004065 semiconductor Substances 0.000 title claims description 495
- 238000000034 method Methods 0.000 title claims description 161
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims description 208
- 229910052760 oxygen Inorganic materials 0.000 claims description 108
- 239000001301 oxygen Substances 0.000 claims description 108
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 106
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 56
- 230000036961 partial effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 1286
- 239000000523 sample Substances 0.000 description 174
- 239000007789 gas Substances 0.000 description 136
- 239000008188 pellet Substances 0.000 description 121
- 239000013078 crystal Substances 0.000 description 88
- 239000010410 layer Substances 0.000 description 83
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 70
- 230000006870 function Effects 0.000 description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 64
- 229910052710 silicon Inorganic materials 0.000 description 64
- 239000010703 silicon Substances 0.000 description 64
- 230000035882 stress Effects 0.000 description 61
- 239000011701 zinc Substances 0.000 description 58
- 239000004973 liquid crystal related substance Substances 0.000 description 53
- 229910052581 Si3N4 Inorganic materials 0.000 description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 50
- 238000010438 heat treatment Methods 0.000 description 48
- 238000012360 testing method Methods 0.000 description 44
- 230000015572 biosynthetic process Effects 0.000 description 43
- 230000008569 process Effects 0.000 description 42
- 238000004544 sputter deposition Methods 0.000 description 39
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 38
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 38
- 239000001257 hydrogen Substances 0.000 description 37
- 229910052739 hydrogen Inorganic materials 0.000 description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 35
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 34
- 230000002829 reductive effect Effects 0.000 description 34
- 230000007547 defect Effects 0.000 description 30
- 238000005259 measurement Methods 0.000 description 30
- 229910052757 nitrogen Inorganic materials 0.000 description 30
- 239000000203 mixture Substances 0.000 description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 27
- 125000004429 atom Chemical group 0.000 description 27
- 229910052782 aluminium Inorganic materials 0.000 description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 25
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 229910000077 silane Inorganic materials 0.000 description 21
- 238000004458 analytical method Methods 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 230000008859 change Effects 0.000 description 19
- 239000011521 glass Substances 0.000 description 19
- 229910052786 argon Inorganic materials 0.000 description 18
- 238000012545 processing Methods 0.000 description 18
- 229910052721 tungsten Inorganic materials 0.000 description 18
- 239000010937 tungsten Substances 0.000 description 18
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 17
- 238000000151 deposition Methods 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000000126 substance Substances 0.000 description 16
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 229910001882 dioxygen Inorganic materials 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 238000001039 wet etching Methods 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 238000005477 sputtering target Methods 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- 230000005669 field effect Effects 0.000 description 11
- 229960001730 nitrous oxide Drugs 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 229910001868 water Inorganic materials 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 125000004430 oxygen atom Chemical group O* 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 229910007541 Zn O Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 150000002431 hydrogen Chemical class 0.000 description 9
- 235000013842 nitrous oxide Nutrition 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 239000002159 nanocrystal Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 7
- 229910052735 hafnium Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 229910001316 Ag alloy Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 238000011276 addition treatment Methods 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 150000001342 alkaline earth metals Chemical class 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000002003 electron diffraction Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000012916 structural analysis Methods 0.000 description 6
- -1 tungsten nitride Chemical class 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 238000004549 pulsed laser deposition Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001362 electron spin resonance spectrum Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011449 brick Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003098 cholesteric effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000009429 distress Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000006213 oxygenation reaction Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 210000002925 A-like Anatomy 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 239000005264 High molar mass liquid crystal Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
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- H01L21/02107—Forming insulating materials on a substrate
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Description
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図1乃至図7を参照して説明する。
図1(A)は、本発明の一態様の半導体装置であるトランジスタ100の上面図であり、図1(B)は、図1(A)に示す一点鎖線X1−X2間における切断面の断面図に相当し、図1(C)は、図1(A)に示す一点鎖線Y1−Y2間における切断面の断面図に相当する。なお、図1(A)において、煩雑になることを避けるため、トランジスタ100の構成要素の一部(ゲート絶縁膜として機能する絶縁膜等)を省略して図示している。また、一点鎖線X1−X2方向をチャネル長方向、一点鎖線Y1−Y2方向をチャネル幅方向と呼称する場合がある。なお、トランジスタの上面図においては、以降の図面においても図1(A)と同様に、構成要素の一部を省略して図示する場合がある。
基板102の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板102として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板102として用いてもよい。なお、基板102として、ガラス基板を用いる場合、第6世代(1500mm×1850mm)、第7世代(1870mm×2200mm)、第8世代(2200mm×2400mm)、第9世代(2400mm×2800mm)、第10世代(2950mm×3400mm)等の大面積基板を用いることで、大型の表示装置を作製することができる。
ゲート電極として機能する導電膜104、及びソース電極として機能する導電膜112a、及びドレイン電極として機能する導電膜112bとしては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
トランジスタ100のゲート絶縁膜として機能する絶縁膜106、107としては、プラズマ化学気相堆積(PECVD:(Plasma Enhanced Chemical Vapor Deposition))法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁層を、それぞれ用いることができる。なお、絶縁膜106、107の積層構造とせずに、上述の材料から選択された単層の絶縁膜、または3層以上の絶縁膜を用いてもよい。
酸化物半導体膜108としては、先に示す材料を用いることができる。酸化物半導体膜108がIn−M−Zn酸化物の場合、In−M−Zn酸化物を成膜するために用いるスパッタリングターゲットの金属元素の原子数比は、In≧M、Zn≧Mを満たすことが好ましい。このようなスパッタリングターゲットの金属元素の原子数比として、In:M:Zn=1:1:1、In:M:Zn=1:1:1.2、In:M:Zn=2:1:3、In:M:Zn=3:1:2、In:M:Zn=4:2:4.1が好ましい。また、酸化物半導体膜108がIn−M−Zn酸化物の場合、スパッタリングターゲットとしては、多結晶のIn−M−Zn酸化物を含むターゲットを用いると好ましい。多結晶のIn−M−Zn酸化物を含むターゲットを用いることで、結晶性を有する酸化物半導体膜108を形成しやすくなる。なお、成膜される酸化物半導体膜108の原子数比はそれぞれ、誤差として上記のスパッタリングターゲットに含まれる金属元素の原子数比のプラスマイナス40%の変動を含む。例えば、スパッタリングターゲットとして、原子数比がIn:Ga:Zn=4:2:4.1を用いる場合、成膜される酸化物半導体膜108の原子数比は、In:Ga:Zn=4:2:3近傍となる場合がある。
絶縁膜114、116は、酸化物半導体膜108に酸素を供給する機能を有する。また、絶縁膜118は、トランジスタ100の保護絶縁膜としての機能を有する。また、絶縁膜114、116は、酸素を有する。また、絶縁膜114は、酸素を透過することのできる絶縁膜である。なお、絶縁膜114は、後に形成する絶縁膜116を形成する際の、酸化物半導体膜108へのダメージ緩和膜としても機能する。
次に、図1(A)(B)(C)に示すトランジスタ100と異なる構成例について、図3(A)(B)(C)を用いて説明する。なお、先に説明した機能と同様の機能を有する場合には、ハッチパターンを同じくし、特に符号を付さない場合がある。
次に、本発明の一態様の半導体装置であるトランジスタ100の作製方法について、図4乃至図6を用いて以下詳細に説明する。なお、図4乃至図6は、半導体装置の作製方法を説明する断面図である。
該洗浄の方法としては、例えば、リン酸等の薬液を用いた洗浄が挙げられる。リン酸等の薬液を用いて洗浄を行うことで、第2の酸化物半導体膜108bの表面に付着した不純物(例えば、導電膜112a、112bに含まれる元素等)を除去することができる。なお、該洗浄は、必ずしも行う必要はなく、場合によっては、洗浄を行わなくてもよい。
次に、本発明の一態様であるトランジスタ170の作製方法について、図7を用いて以下詳細に説明する。なお、図7は、半導体装置の作製方法を説明する断面図である。また、図7(A)(C)(E)(G)は、トランジスタ170の作製途中のチャネル長方向の断面図であり、図7(B)(D)(F)(H)は、トランジスタ170の作製途中のチャネル幅方向の断面図である。
本実施の形態では、本発明の一態様の半導体装置に含まれる酸化物半導体の構造について、詳細に説明を行う。
酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体とに分けられる。非単結晶酸化物半導体としては、CAAC−OS(C Axis Aligned Crystalline Oxide Semiconductor)、多結晶酸化物半導体、nc−OS(nanocrystalline Oxide Semiconductor)、擬似非晶質酸化物半導体(a−like OS:amorphous like Oxide Semiconductor)、非晶質酸化物半導体などがある。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
以下では、CAAC−OSおよびnc−OSの成膜モデルの一例について説明する。
本実施の形態においては、先の実施の形態で例示したトランジスタを有する表示装置の一例について、図8乃至図10を用いて以下説明を行う。
図9及び図10に示す表示装置700は、引き回し配線部711と、画素部702と、ソースドライバ回路部704と、FPC端子部708と、を有する。また、引き回し配線部711は、信号線710を有する。また、画素部702は、トランジスタ750及び容量素子790を有する。また、ソースドライバ回路部704は、トランジスタ752を有する。
図9に示す表示装置700は、液晶素子775を有する。液晶素子775は、導電膜772、導電膜774、及び液晶層776を有する。導電膜774は、第2の基板705側に設けられ、対向電極としての機能を有する。図9に示す表示装置700は、導電膜772と導電膜774に印加される電圧によって、液晶層776の配向状態が変わることによって光の透過、非透過が制御され画像を表示することができる。
図10に示す表示装置700は、発光素子782を有する。発光素子782は、導電膜784、EL層786、及び導電膜788を有する。図10に示す表示装置700は、発光素子782が有するEL層786が発光することによって、画像を表示することができる。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置について、図11を用いて説明を行う。
本実施の形態では、本発明の一態様の半導体装置を有する表示モジュール及び電子機器について、図12及び図13を用いて説明を行う。
まず、厚さ0.7mmのガラス基板上に、厚さ100nmの酸化物半導体膜を形成した。なお、試料A1、試料A2、及び試料A3は、それぞれ酸化物半導体膜の組成が異なる。
試料B1は、ガラス基板上に、厚さ100nmの窒化シリコン膜が形成された構造である。
試料B2は、ガラス基板上に厚さ100nmの窒化シリコン膜が形成された構造である。
試料B3は、ガラス基板上に厚さ200nmの酸化窒化シリコン膜が形成された構造である。
試料B4は、ガラス基板上に厚さ200nmの酸化窒化シリコン膜が形成された構造である。
次に、上記作製した試料B1乃至試料B4のTDS測定を行った。TDS測定においては、50℃から550℃まで各試料を加熱し、各試料中の絶縁膜に含まれる気体の放出量について評価した。試料B1及び試料B2においては、窒化シリコン膜に含まれる水素の放出量について評価した。なお、水素の放出量としては、質量電荷比(M/z)が2に相当するガスの放出量を測定した。また、試料B3及び試料B4においては、酸化窒化シリコン膜に含まれるH2Oの放出量について評価した。なお、H2Oの放出量としては、質量電荷比(M/z)が18に相当するガスの放出量を測定した。
試料C1は、ガラス基板上に厚さ100nmの窒化シリコン膜が形成された構造である。
試料C2は、ガラス基板上に厚さ100nmの窒化シリコン膜が形成された構造である。
試料C3は、ガラス基板上に厚さ100nmの酸化窒化シリコン膜が形成された構造である。
試料C4は、ガラス基板上に厚さ100nmの酸化窒化シリコン膜が形成された構造である。
次に、上記作製した試料C1乃至試料C4のESR測定を行った。ESR測定は、所定の温度で、マイクロ波の吸収の起こる磁場の値(H0)から、式g=hν/βH0、を用いてg値というパラメータが得られる。なお、νはマイクロ波の周波数である。hはプランク定数であり、βはボーア磁子であり、どちらも定数である。
まず、基板102上に導電膜104を形成した。基板102としては、ガラス基板を用いた。また、導電膜104としては、厚さ100nmのタングステン膜を、スパッタリング装置を用いて形成した。
絶縁膜116上に、厚さ5nmのITSO膜を、スパッタリング装置を用いて形成した該ITSO膜の成膜条件としては、基板温度を室温とし、流量72sccmのアルゴンガスと、流量5sccmの酸素ガスをチャンバー内に導入し、圧力を0.15Paとし、スパッタリング装置内に設置された金属酸化物ターゲット(In2O3:SnO2:SiO2=85:10:5[重量%])に1000WのDC電力を供給して成膜した。
次に、ITSO膜を介して、酸化物半導体膜108、及び絶縁膜114、116に酸素添加処理を行った。該酸素添加処理としては、アッシング装置を用い、基板温度を40℃とし、流量250sccmの酸素ガスをチャンバー内に導入し、圧力を15Paとし、基板側にバイアスが印加されるように、アッシング装置内に設置された平行平板の電極間に4500WのRF電力を600sec供給して行った。
試料D2は、先に示す試料D1と比較し、以下の工程が異なる。それ以外の工程については、試料D1と同様とした。
試料D3は、先に示す試料D1と比較し、以下の工程が異なる。それ以外の工程については、試料D1と同様とした。
まず、基板102上に導電膜104を形成した。基板102としては、ガラス基板を用いた。なお、ガラス基板の大きさとしては、600mm×720mm、厚さ0.7mmとした。また、導電膜104としては、厚さ100nmのタングステン膜を、スパッタリング装置を用いて形成した。
絶縁膜116上に、厚さ5nmのITSO膜を、スパッタリング装置を用いて形成した。該ITSO膜の成膜条件としては、基板温度を室温とし、流量72sccmのアルゴンガスと、流量5sccmの酸素ガスをチャンバー内に導入し、圧力を0.15Paとし、スパッタリング装置内に設置された金属酸化物ターゲット(In2O3:SnO2:SiO2=85:10:5[重量%])に1000WのDC電力を供給して成膜した。
次に、ITSO膜を介して、酸化物半導体膜108、及び絶縁膜114、116に酸素添加処理を行った。該酸素添加処理としては、アッシング装置を用い、基板温度を40℃とし、流量250sccmの酸素ガスをチャンバー内に導入し、圧力を15Paとし、基板側にバイアスが印加されるように、アッシング装置内に設置された平行平板の電極間に4500WのRF電力を120sec供給して行った。
次に、ITSO膜を除去し、絶縁膜116を露出させた。また、ITSO膜の除去方法としては、ウエットエッチング装置を用い、濃度5%のシュウ酸水溶液を用いて、300secのエッチングを行った後、濃度0.5%のフッ化水素酸を用いて、15secのエッチングを行った。
試料E2は、先に示す試料E1と比較し、以下の工程が異なる。それ以外の工程については、試料E1と同様とした。
102 基板
104 導電膜
106 絶縁膜
107 絶縁膜
108 酸化物半導体膜
108a 酸化物半導体膜
108b 酸化物半導体膜
112 導電膜
112a 導電膜
112b 導電膜
114 絶縁膜
116 絶縁膜
118 絶縁膜
120 導電膜
120a 導電膜
120b 導電膜
131 酸化物導電膜
138 エッチングガス
139 酸素
140a マスク
140b マスク
142 エッチャント
142a 開口部
142b 開口部
142c 開口部
170 トランジスタ
501 画素回路
502 画素部
504 駆動回路部
504a ゲートドライバ
504b ソースドライバ
506 保護回路
507 端子部
550 トランジスタ
552 トランジスタ
554 トランジスタ
560 容量素子
562 容量素子
570 液晶素子
572 発光素子
700 表示装置
701 基板
702 画素部
704 ソースドライバ回路部
705 基板
706 ゲートドライバ回路部
708 FPC端子部
710 信号線
711 配線部
712 シール材
716 FPC
730 絶縁膜
732 封止膜
734 絶縁膜
736 着色膜
738 遮光膜
750 トランジスタ
752 トランジスタ
760 接続電極
764 絶縁膜
766 絶縁膜
767 酸化物半導体膜
768 絶縁膜
770 平坦化絶縁膜
772 導電膜
774 導電膜
775 液晶素子
776 液晶層
778 構造体
780 異方性導電膜
782 発光素子
784 導電膜
786 EL層
788 導電膜
790 容量素子
800 領域
801 領域
802 領域
803 領域
804 領域
840A 画素部
840B 画素部
850 領域
851 領域
852 領域
853 領域
854 領域
861 配線
862 配線
863 配線
870 保護回路
871 トランジスタ
872 トランジスタ
902 基板
904 導電膜
904a 導電膜
904b 導電膜
904c 導電膜
906 絶縁膜
907 絶縁膜
908 酸化物半導体膜
908a 酸化物半導体膜
908b 酸化物半導体膜
909 酸化物半導体膜
909a 酸化物半導体膜
909b 酸化物半導体膜
910 酸化物半導体膜
910a 酸化物半導体膜
910b 酸化物半導体膜
912a 導電膜
912b 導電膜
912c 導電膜
912d 導電膜
912e 導電膜
914 絶縁膜
916 絶縁膜
918 絶縁膜
920 導電膜
920a 導電膜
920b 導電膜
920c 導電膜
924 絶縁膜
5100 ペレット
5100a ペレット
5100b ペレット
5101 イオン
5102 酸化亜鉛層
5103 粒子
5105a ペレット
5105a1 領域
5105a2 ペレット
5105b ペレット
5105c ペレット
5105d ペレット
5105d1 領域
5105e ペレット
5120 基板
5130 ターゲット
5161 領域
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9050 操作ボタン
9051 情報
9052 情報
9053 情報
9054 情報
9055 ヒンジ
9100 携帯情報端末
9101 携帯情報端末
9102 携帯情報端末
9200 携帯情報端末
9201 携帯情報端末
Claims (2)
- トランジスタを有する半導体装置の作製方法であって、
基板上にゲート電極を形成する工程と、
前記ゲート電極上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に第1の酸化物半導体膜を形成する工程と、
前記第1の酸化物半導体膜上に第2の酸化物半導体膜を形成する工程と、
前記第2の酸化物半導体膜上にソース電極及びドレイン電極を形成する工程と、
前記第2の酸化物半導体膜上に酸化物絶縁膜を形成する工程と、
前記酸化物絶縁膜上に酸化物導電膜を形成する工程と、
前記酸化物導電膜を介して、前記酸化物絶縁膜中に酸素を添加する工程と、
前記酸化物導電膜を除去する工程と、を備え、
前記ソース電極及び前記ドレイン電極を形成する工程において、
前記第2の酸化物半導体膜の一部の領域は、前記第1の酸化物半導体膜よりも薄くなり、
前記酸化物絶縁膜を形成する工程は、
PECVD装置にて180℃以上350℃以下の温度で実施され、
前記トランジスタの作製工程中において、前記酸化物絶縁膜を形成する工程の前記温度が最も高い、
ことを特徴とする半導体装置の作製方法。 - トランジスタを有する半導体装置の作製方法であって、
基板上に第1のゲート電極を形成する工程と、
前記第1のゲート電極上に第1のゲート絶縁膜を形成する工程と、
前記第1のゲート絶縁膜上に第1の酸化物半導体膜を形成する工程と、
前記第1の酸化物半導体膜上に第2の酸化物半導体膜を形成する工程と、
前記第2の酸化物半導体膜上にソース電極及びドレイン電極を形成する工程と、
前記第2の酸化物半導体膜上に第2のゲート絶縁膜として機能する、酸化物絶縁膜を形成する工程と、
前記酸化物絶縁膜上に酸化物導電膜を形成する工程と、
前記酸化物導電膜を介して、前記酸化物絶縁膜中に酸素を添加する工程と、
前記酸化物導電膜を除去する工程と、
前記酸化物絶縁膜上に第2のゲート電極を形成する工程と、を備え、
前記ソース電極及び前記ドレイン電極を形成する工程において、
前記第2の酸化物半導体膜の一部の領域は、前記第1の酸化物半導体膜よりも薄くなり、
前記酸化物絶縁膜を形成する工程は、
PECVD装置にて180℃以上350℃以下の温度で実施され、
前記トランジスタの作製工程中において、前記酸化物絶縁膜を形成する工程の前記温度が最も高い、
ことを特徴とする半導体装置の作製方法。
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Also Published As
Publication number | Publication date |
---|---|
KR20220069118A (ko) | 2022-05-26 |
US20180090602A1 (en) | 2018-03-29 |
CN106537604B (zh) | 2020-09-11 |
TWI682550B (zh) | 2020-01-11 |
JP2019195094A (ja) | 2019-11-07 |
JP2023169314A (ja) | 2023-11-29 |
TW201603286A (zh) | 2016-01-16 |
JP6799116B2 (ja) | 2020-12-09 |
US9496412B2 (en) | 2016-11-15 |
DE112015003266T5 (de) | 2017-04-13 |
JP2022017592A (ja) | 2022-01-25 |
JP2021036613A (ja) | 2021-03-04 |
WO2016009310A1 (en) | 2016-01-21 |
US10164075B2 (en) | 2018-12-25 |
KR20170029600A (ko) | 2017-03-15 |
JP2016139777A (ja) | 2016-08-04 |
TW201943084A (zh) | 2019-11-01 |
US9837512B2 (en) | 2017-12-05 |
US20160020329A1 (en) | 2016-01-21 |
CN112038410A (zh) | 2020-12-04 |
JP6979504B2 (ja) | 2021-12-15 |
CN106537604A (zh) | 2017-03-22 |
KR102399893B1 (ko) | 2022-05-20 |
US20170047435A1 (en) | 2017-02-16 |
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