JP6546376B2 - 電子部品 - Google Patents

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Publication number
JP6546376B2
JP6546376B2 JP2014161240A JP2014161240A JP6546376B2 JP 6546376 B2 JP6546376 B2 JP 6546376B2 JP 2014161240 A JP2014161240 A JP 2014161240A JP 2014161240 A JP2014161240 A JP 2014161240A JP 6546376 B2 JP6546376 B2 JP 6546376B2
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Japan
Prior art keywords
layer
solder layer
solder
arrangement region
metal material
Prior art date
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Expired - Fee Related
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JP2014161240A
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English (en)
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JP2016039240A (ja
Inventor
藤井　義磨郎
義磨郎 藤井
小栗　洋
洋 小栗
明 坂本
坂本　　明
智也 田口
智也 田口
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2014161240A priority Critical patent/JP6546376B2/ja
Priority to PCT/JP2015/072215 priority patent/WO2016021632A1/ja
Priority to CN201580042313.6A priority patent/CN106663641B/zh
Priority to KR1020167031733A priority patent/KR102387336B1/ko
Priority to US15/320,835 priority patent/US20170200693A1/en
Priority to TW104125674A priority patent/TWI711137B/zh
Publication of JP2016039240A publication Critical patent/JP2016039240A/ja
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Publication of JP6546376B2 publication Critical patent/JP6546376B2/ja
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Description

本発明は、電子部品に関する。
フォトダイオードと、フォトダイオードの上面の受光部以外の部位に配置されている端子と、端子に配置されているバンプと、を備えた電子部品が知られている（たとえば、特許文献１参照）。この電子部品には、他の電子部品として、ＩＣチップが実装される。
特開２０００−３０７１３３号公報
本発明は、Ａｕ−Ｓｎ合金ハンダを用いて他の電子部品を実装する場合でも、当該他の電子部品の実装を適切に行うことが可能な電子部品を提供することを目的とする。
本発明に係る電子部品は、基材と、基材上に配置されている、複数の導電性金属材料層の積層体と、積層体上に配置されているＡｕ−Ｓｎ合金ハンダからなるハンダ層と、を備え、積層体は、最外層を構成する導電性金属材料層として、Ａｕからなる表面層を有し、表面層は、ハンダ層が配置されるハンダ層配置領域と、ハンダ層が配置されないハンダ層非配置領域と、を含み、ハンダ層配置領域とハンダ層非配置領域とは、空間的に離間していることを特徴とする。
本発明に係る電子部品では、積層体の最外層を構成するＡｕからなる表面層が、ハンダ層配置領域とハンダ層非配置領域とを含み、これらのハンダ層配置領域とハンダ層非配置領域とは空間的に離間している。このため、本発明に係る電子部品に他の電子部品を実装する際に、積層体上に配置されているハンダ層（Ａｕ−Ｓｎ合金ハンダ）は溶融するものの、溶融したＡｕ−Ｓｎ合金ハンダがハンダ層配置領域からハンダ層非配置領域に流れ出すことが抑制される。
ハンダ層と表面層との熱履歴により、表面層のＡｕがハンダ層に拡散し、Ａｕ−Ｓｎ合金ハンダの組成が変化することがある。Ａｕ−Ｓｎ合金ハンダの組成が変化した場合、Ａｕ−Ｓｎ合金ハンダの融点にバラつきが生じたり、他の電子部品の接合状態が不均一となったりするおそれがある。上述したように、ハンダ層配置領域とハンダ層非配置領域とは空間的に離間しているので、表面層のＡｕがハンダ層に拡散する場合でも、ハンダ層非配置領域のＡｕはハンダ層に拡散することはなく、表面層からのＡｕの拡散量は抑制される。このため、Ａｕ−Ｓｎ合金ハンダの組成の変化が抑制される。
以上のことから、本発明によれば、Ａｕ−Ｓｎ合金ハンダを用いて他の電子部品を実装する場合でも、当該他の電子部品の実装を適切に行うことができる。
ハンダ層配置領域は、ハンダ層非配置領域に囲まれるように、ハンダ層非配置領域の内側に位置すると共に、その全周においてハンダ層非配置領域と空間的に離間していてもよい。この場合、溶融したＡｕ−Ｓｎ合金ハンダがハンダ層配置領域からハンダ層非配置領域に流れ出すことがより一層確実に抑制できる。また、ハンダ層配置領域からのＡｕの拡散量がより一層抑制されるため、Ａｕ−Ｓｎ合金ハンダの組成の変化を確実に抑制することができる。
ハンダ層配置領域とハンダ層非配置領域とは、表面層に形成されたスリットにより空間的に離間していてもよい。この場合、ハンダ層配置領域とハンダ層非配置領域とが空間的に離間している構成を簡易に実現することができる。
ハンダ層は、Ｐｔからなるバリア層を介して、積層体上に配置されていてもよい。この場合、ハンダ層配置領域からのＡｕの拡散が防がれるため、Ａｕ−Ｓｎ合金ハンダの組成の変化をより一層確実に抑制することができる。
本発明によれば、Ａｕ−Ｓｎ合金ハンダを用いて他の電子部品を実装する場合でも、当該他の電子部品の実装を適切に行うことが可能な電子部品を提供することができる。
本発明の実施形態に係る電子部品を示す平面図である。 図１に示されたII−II線に沿った断面構成を説明するための図である。 本実施形態の変形例に係る電子部品の断面構成を説明するための図である。 ハンダ層を形成する過程を説明するための図である。 ハンダ層配置領域とハンダ層非配置領域とが空間的に離間していない電子部品の断面構成を説明するための図である。 本実施形態の他の変形例に係る電子部品を示す平面図である。 本実施形態の他の変形例に係る電子部品の断面構成を説明するための図である。 本実施形態の他の変形例に係る電子部品を示す平面図である。
以下、図面を参照しながら、本発明の実施形態について詳細に説明する。なお、説明において、同一要素又は同一機能を有する要素には、同一符号を用いることとし、重複する説明は省略する。
図１及び図２を参照して、本実施形態に係る電子部品１Ａの構成を説明する。図１は、本実施形態に係る電子部品の平面図である。図２は、図１に示されたII−II線に沿った断面構成を説明するための図である。
電子部品１Ａは、基材１０、積層体２０、及びハンダ層３０を備えている。電子部品１Ａは、たとえば、他の電子部品３が実装されるサブマウント基板として機能する。他の電子部品３には、例えば、レーザーダイオードなどが挙げられる。実装には、電気的且つ物理的に接続することだけでなく、物理的にのみ接続することも含まれる。
基材１０は、半導体基板１１を含んでいる。半導体基板１１は、互いに対向する一対の主面１１ａ，１１ｂと、側面１１ｃと、を有する、第一導電型（たとえば、Ｎ型）のシリコン基板である。側面１１ｃは、一対の主面１１ａ，１１ｂ間を連結するように一対の主面１１ａ，１１ｂの対向方向に延びている。本実施形態では、半導体基板１１は、図１に示されるように、平面視で矩形形状を呈しており、四つの側面１１ｃを有する。
半導体基板１１は、主面１１ａ側に位置する第二導電型（たとえば、Ｐ型）の第一半導体領域１３を有している。第一半導体領域１３は、第二導電型の不純物（ボロンなど）が添加された領域であり、半導体基板１１よりも不純物濃度が高い。第一半導体領域１３は、たとえば、イオン注入法又は拡散法により、第二導電型の不純物を主面１１ａ側から半導体基板１１に添加することにより形成される。
基材１０では、半導体基板１１と第一半導体領域１３とでＰＮ接合が形成されている。すなわち、基材１０は、主面１１ａが光入射面である表面入射型のフォトダイオードである。第一半導体領域１３は、半導体基板１１とで光感応領域を構成している。他の電子部品３としてレーザーダイオードが電子部品１Ａに実装される場合、上記フォトダイオードは、レーザーダイオードの出力をモニタする。
基材１０は、半導体基板１１の主面１１ａ上に配置されているパッシベーション膜１５を含んでいる。パッシベーション膜１５には、第一半導体領域１３に対応する位置に開口１５ａが形成されている。第一半導体領域１３（光感応領域）には、パッシベーション膜１５に形成された開口１５ａを通って、光が入射する。パッシベーション膜１５は、たとえばＳｉＮからなる。パッシベーション膜１５は、たとえばＣＶＤ（Chemical Vapor Deposition）法により形成される。本実施形態では、上記フォトダイオードに接続されるカソード電極（パッド）及びアノード電極（パッド）の図示を省略している。
積層体２０は、基材１０（パッシベーション膜１５上）上に配置されている。詳細には、積層体２０は、パッシベーション膜１５における、開口１５ａが形成されていない領域上に配置されている。積層体２０は、複数の導電性金属材料層（本実施形態では、三層の導電性金属材料層２１，２２，２３）からなる。各導電性金属材料層２１，２２，２３は、導電性金属材料からなる層である。三層の導電性金属材料層２１，２２，２３は、基材１０側から、導電性金属材料層２１、導電性金属材料層２２、導電性金属材料層２３の順に積層されている。各導電性金属材料層２１，２２，２３は、たとえば真空蒸着法又はスパッタリング法により形成される。
導電性金属材料層２１は、基材１０（パッシベーション膜１５）との接触層を構成しており、基材１０（パッシベーション膜１５）との密着性を高める。導電性金属材料層２１は、たとえばＴｉからなる。導電性金属材料層２１の厚みは、たとえば０．１〜０．２μｍである。導電性金属材料層２１は、Ｔｉ以外に、Ｃｒなどからなっていてもよい。
導電性金属材料層２２は、中間のバリア層を構成しており、他の導電性金属材料層２１，２３から金属材料（金属原子）が拡散するのを防ぐ。導電性金属材料層２２は、たとえばＰｔからなる。導電性金属材料層２２の厚みは、たとえば０．２〜０．３μｍである。
導電性金属材料層２３は、積層体２０の最外層を構成する、すなわち表面層を構成している。導電性金属材料層２３は、たとえばＡｕからなる。導電性金属材料層２３の厚みは、たとえば０．１〜０．５μｍである。
導電性金属材料層２３は、ハンダ層３０が配置されるハンダ層配置領域２３ａと、ハンダ層３０が配置されないハンダ層非配置領域２３ｂと、を含んでいる。ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとは、導電性金属材料層２２上において、空間的に離間している。すなわち、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとが空間的に離間している領域では、導電性金属材料層２２が露出している。
本実施形態では、ハンダ層配置領域２３ａは、ハンダ層非配置領域２３ｂに囲まれるように、ハンダ層非配置領域２３ｂの内側に位置すると共に、その全周においてハンダ層非配置領域２３ｂと空間的に離間している。ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとは、導電性金属材料層２３に形成されたスリット２３ｃにより空間的に離間している。
ハンダ層３０は、Ａｕ−Ｓｎ合金ハンダからなり、積層体２０（導電性金属材料層２３のハンダ層配置領域２３ａ）上に配置されている。ハンダ層３０は、導電性金属材料層２３（ハンダ層配置領域２３ａ）に接している。ハンダ層３０は、たとえばフォトレジスト（ネガ型のフォトレジスト）を用いたリフトオフ法により形成される。ハンダ層３０の厚みは、たとえば２．０〜５．０μｍである。
以上のように、本実施形態では、Ａｕからなる導電性金属材料層２３が、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとを含み、これらのハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとは空間的に離間している。このため、電子部品１Ａに他の電子部品３を実装する際に、積層体２０上に配置されているハンダ層３０（Ａｕ−Ｓｎ合金ハンダ）は溶融するものの、溶融したＡｕ−Ｓｎ合金ハンダがハンダ層配置領域２３ａからハンダ層非配置領域２３ｂに流れ出すことが抑制される。
電子部品１Ａの製造過程におけるハンダ層３０と導電性金属材料層２３との熱履歴により、導電性金属材料層２３のＡｕがハンダ層３０に拡散し、Ａｕ−Ｓｎ合金ハンダの組成が変化することがある。Ａｕ−Ｓｎ合金ハンダの組成が変化した場合、Ａｕ−Ｓｎ合金ハンダの融点にバラつきが生じたり、他の電子部品３の接合状態が不均一となったりするおそれがある。
これに対し、本実施形態では、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとは空間的に離間しているので、導電性金属材料層２３のＡｕがハンダ層３０に拡散する場合でも、ハンダ層非配置領域２３ｂのＡｕはハンダ層３０に拡散することはなく、導電性金属材料層２３からのＡｕの拡散量は抑制される。このため、Ａｕ−Ｓｎ合金ハンダの組成の変化が抑制される。
これらの結果、電子部品１Ａによれば、Ａｕ−Ｓｎ合金ハンダを用いて他の電子部品３を実装する場合でも、他の電子部品３の実装を適切に行うことができる。
本実施形態では、ハンダ層配置領域２３ａは、ハンダ層非配置領域２３ｂに囲まれるように、ハンダ層非配置領域２３ｂの内側に位置すると共に、その全周においてハンダ層非配置領域２３ｂと空間的に離間している。これにより、溶融したＡｕ−Ｓｎ合金ハンダがハンダ層配置領域２３ａからハンダ層非配置領域２３ｂに流れ出すことがより一層確実に抑制できる。また、ハンダ層配置領域２３ａからのＡｕの拡散量がより一層抑制されるため、Ａｕ−Ｓｎ合金ハンダの組成の変化を確実に抑制することができる。
本実施形態では、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとは、導電性金属材料層２３に形成されたスリットにより空間的に離間している。これにより、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとが空間的に離間している構成を簡易に実現することができる。
次に、図３を参照して、本実施形態の変形例に係る電子部品１Ｂの構成を説明する。図３は、本実施形態の変形例に係る電子部品の断面構成を説明するための図である。
電子部品１Ｂは、基材１０、積層体２０、ハンダ層３０、及びバリア層４０を備えている。電子部品１Ｂも、電子部品１Ａと同様に、たとえば、他の電子部品３が実装されるサブマウント基板として機能する。
バリア層４０は、積層体２０とハンダ層３０との間に配置されている。バリア層４０は、積層体２０（導電性金属材料層２３）に接すると共に、ハンダ層３０に接している。すなわち、ハンダ層３０は、バリア層４０を介して、積層体２０上に配置されている。バリア層４０は、Ｐｔからなる。バリア層４０は、たとえば、リフトオフ法によりハンダ層３０と共に形成される。バリア層４０の厚みは、たとえば０．２〜０．３μｍである。
本変形例では、バリア層４０により、導電性金属材料層２３（ハンダ層配置領域２３ａ）からのＡｕの拡散が防がれる。したがって、電子部品１Ｂにおいて、Ａｕ−Ｓｎ合金ハンダの組成の変化をより一層確実に抑制することができる。
バリア層４０が積層体２０とハンダ層３０との間に配置されている場合、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとが空間的に離間していなくても、ハンダ層配置領域２３ａからハンダ層非配置領域２３ｂへの溶融したＡｕ−Ｓｎ合金ハンダの流れ出しが抑制されることが期待される。しかしながら、以下の事象により、バリア層４０が存在している場合でも、上述した溶融したＡｕ−Ｓｎ合金ハンダの流れ出しは抑制され難い。
ハンダ層３０が上述したリフトオフ法により形成されている場合、フォトレジスト５０の形状に起因して、図４及び図５に示されるように、ハンダ層３０がバリア層４０よりも広く形成される。すなわち、ハンダ層３０は、バリア層４０を覆うと共に積層体２０（導電性金属材料層２３）に接するように形成される。ハンダ層３０の厚みは、一般に、バリア層４０の厚みよりも大きい。このため、ハンダ層３０は、当該ハンダ層３０に平行な方向に広がりやすく、ハンダ層３０がバリア層４０よりもより一層広く形成されてしまう。ハンダ層３０が導電性金属材料層２３に接していると、溶融したＡｕ−Ｓｎ合金ハンダは、導電性金属材料層２３上を濡れ広がるおそれがあり、ハンダ層配置領域２３ａからハンダ層非配置領域２３ｂに流れ出してしまう。
本変形例では、電子部品１Ａと同様に、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとは空間的に離間しているので、溶融したＡｕ−Ｓｎ合金ハンダのハンダ層配置領域２３ａからハンダ層非配置領域２３ｂへの流れ出しが確実に抑制される。
以上、本発明の実施形態について説明してきたが、本発明は必ずしも上述した実施形態に限定されるものではなく、その要旨を逸脱しない範囲で様々な変更が可能である。
基材１０は、表面入射型のフォトダイオードに限られない。基材１０は、図６及び図７に示されるように、少なくともいずれか一つの側面１１ｃが光入射面である側面入射型のフォトダイオードであってもよい。図６及び図７に示された電子部品１Ａでは、パッシベーション膜１５から露出するように、カソード電極（パッド）６１と、アノード電極（パッド）６３と、が配置されている。図６は、本実施形態の他の変形例に係る電子部品を示す平面図である。図７は、本実施形態の他の変形例に係る電子部品の断面構成を説明するための図である。
ハンダ層配置領域２３ａは、ハンダ層非配置領域２３ｂに囲まれるように、ハンダ層非配置領域２３ｂの内側に位置すると共に、その全周においてハンダ層非配置領域２３ｂと空間的に離間している必要はない。たとえば、ハンダ層配置領域２３ａとハンダ層非配置領域２３ｂとは、図８に示されるように、直線状のスリット２３ｃで分割されるように空間的に離間していてもよい。
積層体２０は、三層の導電性金属材料層２１，２２，２３からなる必要はない。積層体２０は、二層の導電性金属材料層からなっていてもよく、また、四層以上の導電性金属材料層からなっていてもよい。これらの場合でも、積層体２０における最外層を構成する導電性金属材料層、すなわち表面層がＡｕからなっていればよい。
基材１０は、フォトダイオードでなくてもよく、また、基材１０は、半導体基板１１を含んでいる必要はない。基材１０は、半導体基板１１の代わりに、たとえばセラミック基板又はガラス基板などを含んでいてもよい。セラミック基板には、窒化アルミニウム（ＡｌＮ）基板又はアルミナ（Ａｌ２Ｏ３）基板などが用いられる。
電子部品１Ａ，１Ｂに実装される他の電子部品３は、レーザーダイオードである必要はない。他の電子部品３は、たとえば受光素子、発光素子、半導体パッケージ、回路基板、能動部品、又は受動部品であってもよい。
１Ａ，１Ｂ…電子部品、１０…基材、２０…積層体、２１，２２，２３…導電性金属材料層、２３ａ…ハンダ層配置領域、２３ｂ…ハンダ層非配置領域、２３ｃ…スリット、３０…ハンダ層、４０…バリア層。

Claims (5)

  1. 基材と、
    前記基材上に配置されている、複数の導電性金属材料層の積層体と、
    前記積層体上に配置されている、Ａｕ−Ｓｎ合金ハンダからなるハンダ層と、を備え、
    前記積層体は、最外層を構成する前記導電性金属材料層として、Ａｕからなる表面層を有し、
    前記表面層は、前記ハンダ層が配置されるハンダ層配置領域と、前記ハンダ層が配置されないハンダ層非配置領域と、を含み、
    前記ハンダ層配置領域と前記ハンダ層非配置領域とは、前記ハンダ層非配置領域のＡｕが前記ハンダ層に拡散することがないように空間的に離間しており、
    前記ハンダ層配置領域と前記ハンダ層非配置領域とが空間的に離間している領域では、前記表面層下の前記導電性金属材料層が露出していることを特徴とする電子部品。
  2. 前記ハンダ層配置領域は、前記ハンダ層非配置領域に囲まれるように、前記ハンダ層非配置領域の内側に位置すると共に、その全周において前記ハンダ層非配置領域と空間的に離間していることを特徴とする請求項１に記載の電子部品。
  3. 前記ハンダ層配置領域と前記ハンダ層非配置領域とは、前記表面層に形成されたスリットにより空間的に離間していることを特徴とする請求項１又は２に記載の電子部品。
  4. 前記ハンダ層は、Ｐｔからなるバリア層を介して、前記積層体上に配置されていることを特徴とする請求項１〜３のいずれか一項に記載の電子部品。
  5. 前記複数の導電性金属材料層は、前記基材との接触層を構成している導電性金属材料層と、当該導電性金属材料層と前記表面層との間に位置していると共にバリア層を構成している導電性金属材料層と、を含み、
    前記ハンダ層配置領域と前記ハンダ層非配置領域とが空間的に離間している前記領域では、前記バリア層を構成している導電性金属材料層が露出していることを特徴とする請求項１〜４のいずれか一項に記載の電子部品。
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