JP6515058B2 - 構造化被覆部を基板上に形成する方法 - Google Patents
構造化被覆部を基板上に形成する方法 Download PDFInfo
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Description
被覆される基板表面上に構造化被覆部を形成する方法が、文献DE 102 22 609 B4に記載されている。この公知のプロセスは、剥離方法に関し、まず、被覆される基板表面に反転構造(negative structuring)を有する第1の層を設ける。次に、第2の層の各部分を上に担持する第1の層を最終的に少なくとも部分的に除去できるように、第2の層を該表面上に積層する。構造化被覆部は、蒸着ガラス物質(evaporation glass material)を含む第2の層を蒸着によって積層させることによって、公知の方法で形成される。
本発明が取り組む課題は、基板上における構造化被覆部の形成に関連する技術を向上させることである。
被覆される表面を有する基板を準備するステップと、
少なくとも1種類の蒸着被覆物質、具体的には、酸化アルミニウム、二酸化ケイ素、窒化ケイ素、または、二酸化チタンを、熱蒸着法および加法的構造化法によって上記被覆される基板表面上に積層することによって、該表面上に構造化被覆部を形成するステップとを含む、方法が提供される。上記構造化被覆部は、その全体または一部のみがプラズマ促進熱電子ビーム蒸着(plasma−enhanced thermal electron beam evaporation)によって形成される。
基板と、
該基板の被覆される表面上に少なくとも1種類の層物質を含んでなる第1の層であって、該表面の一つ以上の部分には第1の層が設けられておらず、かつ、第1の層が設けられた該表面上に反転構造が形成されている第1の層と、
該第1の層が設けられた表面上に少なくとも1種類の蒸着被覆物質、具体的には、酸化アルミニウム、二酸化ケイ素、窒化ケイ素、または、二酸化チタンを含んでなる第2の層とを有する被覆済み基板を備えた、半完成品が提供される。
(2)上記構造化被覆部の形成が、
上記被覆される基板表面上に少なくとも1種類の層物質を積層し、該基板表面の一つ以上の部分を積層された層物質を除去することによって露出させる、該基板表面上に反転構造を有する第1の層を形成するステップと、
上記少なくとも1種類の蒸着被覆物質を熱蒸着させることによって、少なくとも1種類の蒸着被覆物質の、第2の層を、上記第1の層を有する基板の表面上に積層するステップと、
上記第1の層を少なくとも部分的に除去するステップとを含む、反転構造を利用する構造化プロセス。
次に、好ましい例としての実施形態を用いて、図面を参照しながら、本発明について詳細に記載する。
Claims (12)
- 構造化被覆部を基板上に形成する方法であって、
被覆される表面を有する基板を準備するステップと、
上記基板上に、3つの層のみで出来た層構造を積層するステップとを含み、上記基板上および上記層構造の上下に他の層は積層されず、この層構造を積層するステップは、
上記基板上に第1層を積層するステップと、
上記第1層上に第2層を積層するステップと、
上記第2層上に第3層を積層するステップと、
を含み、
上記第1、第2、および第3層のそれぞれは、蒸着被覆物質を積層することによって形成され、
上記蒸着被覆物質は、酸化アルミニウム、二酸化ケイ素、窒化ケイ素、または、二酸化チタンから選択され、
上記蒸着被覆物質の熱蒸着法が実施され、
上記第2層は、加法的構造化法によって構造化され、
上記熱蒸着法は、プラズマ促進熱電子ビーム蒸着として実施され、
上記第1層の上記蒸着被覆物質は、上記第2層の上記蒸着被覆物質の光学屈折率よりも低い光学屈折率を有し、
上記第3層の上記蒸着被覆物質は、上記第2層の上記蒸着被覆物質の光学屈折率よりも低い光学屈折率を有することを特徴とする方法。 - 上記第1層および/または上記第3層は、加法的構造化法によって構造化されることを特徴とする請求項1に記載の方法。
- 上記第3層は、上記第2層の前面・後面以外の全ての側面において完全に、上記第2層が上記第1層と上記第3層とによって内包されるように、上記第2層上に積層されることを特徴とする請求項1に記載の方法。
- 上記第2層は、光学導波路を形成することを特徴とする請求項3に記載の方法。
- 上記第1層は、二酸化ケイ素からなることを特徴とする請求項1に記載の方法。
- 上記第2層は、酸化アルミニウムからなることを特徴とする請求項1に記載の方法。
- 上記第3層は、二酸化ケイ素からなることを特徴とする請求項1に記載の方法。
- 上記蒸着被覆物質を熱蒸着させるステップが、少なくとも2種類の蒸着原料を用いて共蒸着を実施するステップを含むことを特徴とする請求項1に記載の方法。
- 上記基板を別の基板に接続することを特徴とする請求項1〜8のうちの一項に記載の方法。
- 上記第1層を形成するために上記蒸着被覆物質を積層する間の、上記基板の最大基板温度が120℃であることを特徴とする請求項1〜9のうちの一項に記載の方法。
- 上記基板は、ガラス、金属、プラスチック、セラミック、無機絶縁体、誘電体、および、半導体物質のうちの少なくとも一つの物質を含有することを特徴とする請求項1〜10のうちの一項に記載の方法。
- 構造化被覆部を基板上に形成する方法であって、
被覆される表面を有する基板を準備するステップと、
上記基板上に第1層を積層するステップと、
上記第1層上に第2層を積層するステップと、
上記第2層上に第3層を積層するステップと、
を含み、
上記第1、第2、および第3層のそれぞれは、蒸着被覆物質を積層することによって形成され、
上記蒸着被覆物質は、酸化アルミニウム、二酸化ケイ素、窒化ケイ素、または、二酸化チタンから選択され、
上記蒸着被覆物質の熱蒸着法が実施され、
上記第2層は、加法的構造化法によって構造化され、
上記熱蒸着法は、プラズマ促進熱電子ビーム蒸着として実施され、
上記第1層の上記蒸着被覆物質は、上記第2層の上記蒸着被覆物質の光学屈折率よりも低い光学屈折率を有し、
上記第3層の上記蒸着被覆物質は、上記第2層の上記蒸着被覆物質の光学屈折率よりも低い光学屈折率を有し、
上記第3層は、上記第2層の前面・後面以外の全ての側面において完全に、上記第2層が上記第1層と上記第3層とによって内包されるように、上記第2層上に積層され、
上記第2層は、光学導波路を形成することを特徴とする方法。
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Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009034532A1 (de) * | 2009-07-23 | 2011-02-03 | Msg Lithoglas Ag | Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat |
CN102881779A (zh) * | 2011-07-15 | 2013-01-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
JP6153235B2 (ja) * | 2012-09-21 | 2017-06-28 | アップル インコーポレイテッド | サファイア上での撥油性コーティング |
US9718249B2 (en) | 2012-11-16 | 2017-08-01 | Apple Inc. | Laminated aluminum oxide cover component |
US20140272345A1 (en) * | 2013-03-15 | 2014-09-18 | Rubicon Technology, Inc. | Method of growing aluminum oxide onto substrates by use of an aluminum source in an environment containing partial pressure of oxygen to create transparent, scratch-resistant windows |
DE102013004558B4 (de) | 2013-03-18 | 2018-04-05 | Apple Inc. | Verfahren zur Herstellung einer oberflächenverspannten Saphirscheibe, oberflächenverspannte Saphirscheibe und elektrisches Gerät mit einer transparenten Abdeckung |
US20150029681A1 (en) | 2013-07-29 | 2015-01-29 | Evonik Industries Ag | Flexible composite, production thereof and use thereof |
CN106103370B (zh) | 2014-03-21 | 2020-05-01 | 康宁股份有限公司 | 具有图案化涂层的制品 |
WO2015188879A1 (en) * | 2014-06-13 | 2015-12-17 | Applied Materials, Inc. | Flat edge design for better uniformity and increased edge lifetime |
CN104557039B (zh) * | 2014-12-24 | 2017-04-19 | 福建阿石创新材料股份有限公司 | 中折射率蒸发镀膜材料及其制备工艺和应用 |
DE102015226197A1 (de) * | 2015-12-21 | 2017-06-22 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Strömungssensors auf Dünnfilmbasis sowie ein solcher Strömungssensor |
CA3072149A1 (en) * | 2017-08-10 | 2019-02-14 | Toyobo Co., Ltd. | Gas barrier film production method |
CN110499508B (zh) * | 2018-05-18 | 2021-11-12 | 比亚迪股份有限公司 | 金属制品及其制备方法和应用 |
KR102370558B1 (ko) * | 2018-07-12 | 2022-03-08 | 한국기계연구원 | 나노 또는 마이크로 구조물이 형성된 마스터를 제작하는 방법 |
EP3608728B1 (fr) * | 2018-08-08 | 2022-02-16 | Nivarox-FAR S.A. | Spiral thermocompensé coloré et son procédé de fabrication |
CN109852937A (zh) * | 2019-03-21 | 2019-06-07 | 池州市正彩电子科技有限公司 | 一种提高材料表面硬度的方法 |
DE102019113054A1 (de) | 2019-05-17 | 2020-11-19 | HELLA GmbH & Co. KGaA | Verfahren zur Herstellung eines Blendenarrays für ein Mikrolinsenarray |
US11269374B2 (en) | 2019-09-11 | 2022-03-08 | Apple Inc. | Electronic device with a cover assembly having an adhesion layer |
Family Cites Families (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3873361A (en) * | 1973-11-29 | 1975-03-25 | Ibm | Method of depositing thin film utilizing a lift-off mask |
JPS5299837A (en) | 1976-02-16 | 1977-08-22 | Mitsubishi Electric Corp | Preparation of strong dielectric guide for light integrated circuit |
US4514437A (en) * | 1984-05-02 | 1985-04-30 | Energy Conversion Devices, Inc. | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
US4764244A (en) * | 1985-06-11 | 1988-08-16 | The Foxboro Company | Resonant sensor and method of making same |
JP2730893B2 (ja) * | 1987-06-24 | 1998-03-25 | 三菱電機株式会社 | 回折格子製造方法 |
JPS6468470A (en) * | 1987-09-09 | 1989-03-14 | Ulvac Seimaku | Plasma electron beam heating source |
US4935797A (en) * | 1988-10-31 | 1990-06-19 | International Business Machines Corporation | Heterojunction bipolar transistors |
US5125946A (en) | 1990-12-10 | 1992-06-30 | Corning Incorporated | Manufacturing method for planar optical waveguides |
US5150436A (en) * | 1991-09-06 | 1992-09-22 | The University Of British Columbia | Slow-wave electrode structure |
JPH0583063A (ja) | 1991-09-25 | 1993-04-02 | Matsushita Electric Ind Co Ltd | 超音波遅延線の製造方法 |
US5820770A (en) | 1992-07-21 | 1998-10-13 | Seagate Technology, Inc. | Thin film magnetic head including vias formed in alumina layer and process for making the same |
JPH0677578A (ja) | 1992-08-28 | 1994-03-18 | Hitachi Cable Ltd | 光増幅器及びその製造方法 |
DE4235199C1 (ja) * | 1992-10-19 | 1993-04-22 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
KR0138006B1 (ko) * | 1992-10-26 | 1998-06-15 | 모리시타 요이찌 | 광도파로 및 그 제조방법 |
DE4236264C1 (ja) * | 1992-10-27 | 1993-09-02 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De | |
JPH0799368A (ja) * | 1993-09-29 | 1995-04-11 | Mitsubishi Electric Corp | 光半導体装置 |
JPH07245306A (ja) * | 1994-01-17 | 1995-09-19 | Sony Corp | 半導体装置における膜平坦化方法 |
US5846649A (en) * | 1994-03-03 | 1998-12-08 | Monsanto Company | Highly durable and abrasion-resistant dielectric coatings for lenses |
JPH08225398A (ja) | 1995-02-23 | 1996-09-03 | Sumitomo Electric Ind Ltd | 水晶型結晶構造を有する酸化物薄膜及びその製造方法 |
DE4430363A1 (de) | 1994-08-26 | 1996-02-29 | Leybold Ag | Optische Linse aus einem klarsichtigen Kunststoff |
KR960023231A (ko) * | 1994-12-08 | 1996-07-18 | 구자홍 | 도전성 범프(Bump)의 인 엘로이(In Alloy) 코팅 방법 |
JP3301249B2 (ja) | 1995-01-26 | 2002-07-15 | 株式会社ニコン | 反射用光学素子及びその製造方法 |
JPH08220304A (ja) * | 1995-02-13 | 1996-08-30 | Tadahiro Omi | 光学物品及びそれを用いた露光装置又は光学系並びにその製造方法 |
JPH0946156A (ja) | 1995-07-31 | 1997-02-14 | Kinseki Ltd | 弾性表面波素子およびその製造方法 |
EP0784543B1 (en) * | 1995-08-04 | 2000-04-26 | International Business Machines Corporation | Lithographic surface or thin layer modification |
JP3372258B2 (ja) * | 1995-08-04 | 2003-01-27 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | リソグラフィ・プロセス用のスタンプ |
US6261696B1 (en) * | 1996-03-22 | 2001-07-17 | Canon Kabushika Kaisha | Optical element with substrate containing fluorite as main ingredient, and method and apparatus for producing the optical element |
JP3466865B2 (ja) | 1996-03-22 | 2003-11-17 | キヤノン株式会社 | 光学部品及びその製造方法並びに製造装置 |
JPH1056350A (ja) | 1996-08-07 | 1998-02-24 | Toyo Commun Equip Co Ltd | 圧電素子基板とその製造方法 |
JPH1180935A (ja) | 1997-09-04 | 1999-03-26 | Toyo Commun Equip Co Ltd | 蒸着材料 |
CH693076A5 (de) * | 1998-02-20 | 2003-02-14 | Unaxis Trading Ag | Verfahren zur Herstellung einer Farbfilterschichtsystem-Struktur auf einer Unterlage. |
JP2000199827A (ja) | 1998-10-27 | 2000-07-18 | Sony Corp | 光導波装置およびその製造方法 |
JP2001014649A (ja) | 1999-06-28 | 2001-01-19 | Hitachi Ltd | 板状体、無機化合物基板、磁気記録媒体及び磁気記憶装置 |
JP3571641B2 (ja) * | 1999-11-15 | 2004-09-29 | 松下電器産業株式会社 | 窒化物半導体素子 |
JP2001271157A (ja) | 2000-03-27 | 2001-10-02 | Hitachi Kokusai Electric Inc | 蒸着装置 |
DE10027931C1 (de) * | 2000-05-31 | 2002-01-10 | Infineon Technologies Ag | Verfahren zur rückseitigen elektrischen Kontaktierung eines Halbleitersubstrats während seiner Bearbeitung |
DE50114859D1 (de) | 2000-10-09 | 2009-06-04 | Hueck Folien Gmbh | Metallisierte folie und verfahren zu deren herstellung sowie deren anwendung |
JP4103421B2 (ja) | 2001-03-28 | 2008-06-18 | セイコーエプソン株式会社 | 電子デバイス及び電子機器 |
WO2002082644A1 (fr) | 2001-03-30 | 2002-10-17 | Mitsubishi Denki Kabushiki Kaisha | Dispositif d'onde acoustique et procede de fabrication correspondant |
US6946238B2 (en) * | 2001-06-29 | 2005-09-20 | 3M Innovative Properties Company | Process for fabrication of optical waveguides |
EP1495491B1 (de) * | 2002-04-15 | 2020-12-16 | Schott AG | Verfahren zum verbinden von substraten und verbundelement |
DE10222609B4 (de) * | 2002-04-15 | 2008-07-10 | Schott Ag | Verfahren zur Herstellung strukturierter Schichten auf Substraten und verfahrensgemäß beschichtetes Substrat |
ATE393839T1 (de) * | 2002-04-15 | 2008-05-15 | Schott Ag | Verfahren zur gehäusebildung bei elektronischen bauteilen so wie so hermetisch verkapselte elektronische bauteile |
US7067241B2 (en) * | 2002-05-08 | 2006-06-27 | Unaxis Balzers Aktiengesellschaft | Method for producing a unit having a three-dimensional surface patterning, and use of this method |
AU2003247287A1 (en) * | 2002-05-23 | 2003-12-12 | Schott Ag | Glass material for use at high frequencies |
AU2003237668A1 (en) | 2002-05-23 | 2003-12-12 | Schott Ag | Method for producing a component comprising a conductor structure that is suitable for use at high frequencies and corresponding component |
US8021778B2 (en) * | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
SG121844A1 (en) * | 2002-12-20 | 2006-05-26 | Asml Netherlands Bv | Device manufacturing method |
JP2004218047A (ja) * | 2003-01-17 | 2004-08-05 | Canon Inc | 光学素子の製造方法 |
JP2005130341A (ja) | 2003-10-27 | 2005-05-19 | Murata Mfg Co Ltd | 圧電部品及びその製造方法、通信装置 |
US7253113B2 (en) * | 2003-11-13 | 2007-08-07 | Macronix International Co., Ltd. | Methods for using a silylation technique to reduce cell pitch in semiconductor devices |
USRE42955E1 (en) * | 2003-12-04 | 2011-11-22 | Bae Systems Information And Electronic Systems Integration Inc. | GaN-based permeable base transistor and method of fabrication |
EP1722473A4 (en) | 2004-03-05 | 2008-07-30 | Murata Manufacturing Co | SOUND ACOUSTIC WAVE DEVICE |
US8741550B2 (en) | 2004-06-09 | 2014-06-03 | Schott Ag | Building up diffractive optics by structured glass coating |
DE102004034418B4 (de) | 2004-07-15 | 2009-06-25 | Schott Ag | Verfahren zur Herstellung struktuierter optischer Filterschichten auf Substraten |
JP4694172B2 (ja) * | 2004-10-22 | 2011-06-08 | 株式会社神戸製鋼所 | ダイヤモンド半導体素子及びその製造方法 |
JP2006227432A (ja) * | 2005-02-18 | 2006-08-31 | Nisca Corp | 光学フィルタの製造方法及びこれを用いた光学フィルタ並びに光量調整装置 |
JP4609757B2 (ja) | 2005-02-23 | 2011-01-12 | 三井造船株式会社 | 成膜装置における基板装着方法 |
JP4455381B2 (ja) * | 2005-03-28 | 2010-04-21 | 住友電工デバイス・イノベーション株式会社 | 半導体装置およびその製造方法、容量素子およびその製造方法、並びにmis型半導体装置およびその製造方法。 |
JP2006279609A (ja) | 2005-03-29 | 2006-10-12 | Fujitsu Media Device Kk | 弾性境界波素子、共振子およびラダー型フィルタ |
JP4570152B2 (ja) | 2005-06-01 | 2010-10-27 | 国立大学法人電気通信大学 | 透明導電性成形物及びその製造方法 |
US20070020451A1 (en) | 2005-07-20 | 2007-01-25 | 3M Innovative Properties Company | Moisture barrier coatings |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
DE102005044522B4 (de) | 2005-09-16 | 2010-02-11 | Schott Ag | Verfahren zum Aufbringen einer porösen Glasschicht, sowie Verbundmaterial und dessen Verwendung |
EP1974423A4 (en) | 2006-01-20 | 2010-06-09 | Massachusetts Inst Technology | FIBER LASER WITH SURFACE EMISSION |
JP2007335468A (ja) | 2006-06-12 | 2007-12-27 | Hitachi Media Electoronics Co Ltd | 中空封止素子およびその製造方法 |
US7622364B2 (en) * | 2006-08-18 | 2009-11-24 | International Business Machines Corporation | Bond pad for wafer and package for CMOS imager |
US7465681B2 (en) | 2006-08-25 | 2008-12-16 | Corning Incorporated | Method for producing smooth, dense optical films |
WO2008035466A1 (fr) * | 2006-09-21 | 2008-03-27 | Hitachi Chemical Co., Ltd. | Substrat de guide d'ondes optique et substrat supportant un circuit hybride photoélectrique |
JP4892730B2 (ja) | 2006-12-16 | 2012-03-07 | 国立大学法人大阪大学 | プラズマディスプレイパネルおよびその製造方法 |
WO2008146340A1 (ja) * | 2007-05-25 | 2008-12-04 | Fujitsu Limited | 薄膜磁気ヘッドおよびその製造方法 |
JP2009051055A (ja) * | 2007-08-24 | 2009-03-12 | Fujitsu Component Ltd | 装飾筐体及びその製造方法 |
DE102008034372B4 (de) * | 2008-07-23 | 2013-04-18 | Msg Lithoglas Ag | Verfahren zum Herstellen einer dielektrischen Schicht in einem elektroakustischen Bauelement sowie elektroakustisches Bauelement |
JP5099376B2 (ja) | 2009-03-04 | 2012-12-19 | 豊田合成株式会社 | 発光装置の製造方法 |
DE102009034532A1 (de) * | 2009-07-23 | 2011-02-03 | Msg Lithoglas Ag | Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat |
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KR102081732B1 (ko) | 2020-02-26 |
US10954591B2 (en) | 2021-03-23 |
JP2012533686A (ja) | 2012-12-27 |
DE102009034532A1 (de) | 2011-02-03 |
KR20170046194A (ko) | 2017-04-28 |
TWI526560B (zh) | 2016-03-21 |
EP2456904A1 (de) | 2012-05-30 |
CN106435485B (zh) | 2020-04-21 |
US20120231212A1 (en) | 2012-09-13 |
KR20180078356A (ko) | 2018-07-09 |
WO2011009444A1 (de) | 2011-01-27 |
CN102471867A (zh) | 2012-05-23 |
CN106435485A (zh) | 2017-02-22 |
EP2456904B1 (de) | 2021-01-06 |
TW201111527A (en) | 2011-04-01 |
KR20120038518A (ko) | 2012-04-23 |
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