JP6514138B2 - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000007789 gas Substances 0.000 claims description 106
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 3
- WSWMGHRLUYADNA-UHFFFAOYSA-N 7-nitro-1,2,3,4-tetrahydroquinoline Chemical compound C1CCNC2=CC([N+](=O)[O-])=CC=C21 WSWMGHRLUYADNA-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910015275 MoF 6 Inorganic materials 0.000 claims description 2
- 229910019595 ReF 6 Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- JQAZQSHUPWSSPF-UHFFFAOYSA-H iridium hexafluoride Chemical compound F[Ir](F)(F)(F)(F)F JQAZQSHUPWSSPF-UHFFFAOYSA-H 0.000 claims description 2
- YUCDNKHFHNORTO-UHFFFAOYSA-H rhenium hexafluoride Chemical compound F[Re](F)(F)(F)(F)F YUCDNKHFHNORTO-UHFFFAOYSA-H 0.000 claims description 2
- JBXWMZTZQQGLAG-UHFFFAOYSA-H tetrafluoroplatinum(2+) difluoride Chemical compound F[Pt](F)(F)(F)(F)F JBXWMZTZQQGLAG-UHFFFAOYSA-H 0.000 claims description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 138
- 238000001020 plasma etching Methods 0.000 description 25
- 238000005530 etching Methods 0.000 description 16
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- -1 Code I 2 is high Chemical class 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical group C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Plasma & Fusion (AREA)
Description
図1および図2は、第1実施形態の半導体装置の製造方法を示す断面図である。
図7〜図10は、第2実施形態の半導体装置の製造方法を示す断面図である。
3:第1マスク層、3a:開口部、4:第2マスク層、4a:開口部、
5:レジスト層、5a:開口部、6、6a、6b:金属膜、
11:層間絶縁膜、12:犠牲層、13:絶縁層、
14:第1絶縁膜、15:電荷蓄積層、16:第2絶縁膜、
17:第1半導体層、18:第2半導体層、19:第3絶縁膜、
21:チャネル半導体層、22:電極層
Claims (8)
- 基板上に第1膜を形成し、
前記第1膜上に、カーボン膜である第2膜を形成し、
前記第2膜を加工する第1ガスと、金属元素を含む第2ガスとを同時に使用して、前記第2膜に第1開口部を形成し、かつ、前記金属元素を含む第3膜を前記第1開口部の側面に形成し、
前記第2膜をマスクとして使用して、前記第1開口部の下の前記第1膜に第2開口部を形成する、
ことを含み、
前記第1ガスは、酸素(O 2 )ガス、水素(H 2 )ガス、および窒素(N 2 )ガスの少なくともいずれかを含み、
前記第2ガスは、六フッ化タングステン(WF 6 )ガス、六フッ化モリブデン(MoF 6 )ガス、六フッ化レニウム(ReF 6 )ガス、六フッ化プラチナ(PtF 6 )ガス、六フッ化イリジウム(IrF 6 )ガス、四塩化チタン(TiCl 4 )ガス、四酸化ルテニウム(RuO 4 )ガス、およびトリメチルアルミニウム((CH 3 ) 3 Al)ガスの少なくともいずれかを含み、
前記第1ガスと前記第2ガスの合計流量に対する前記第2ガスの流量の比率は、5%以下である、
半導体装置の製造方法。 - 前記第1膜は、交互に形成された複数の第1層と複数の第2層とを含み、
前記第2開口部は、前記複数の第1層および前記複数の第2層に形成される、
請求項1に記載の半導体装置の製造方法。 - さらに、前記第2開口部内に第1絶縁膜、電荷蓄積層、第2絶縁膜、および半導体層を形成することを含み、
前記第1層は、前記半導体層の形成後に複数の電極層に置き換えられ、
前記第2層は、絶縁層である、
請求項2に記載の半導体装置の製造方法。 - 基板上に第1膜を形成し、
前記第1膜上に第2膜を形成し、
前記第2膜を加工する第1ガスを使用して、前記第2膜に第1開口部を形成するまたは前記第1開口部を加工する第1処理を行い、
金属元素を含む第2ガスを使用して、前記金属元素を含む第3膜を前記第1開口部の側面および底面に形成する第2処理を行い、
前記第3膜を加工する第3ガスを使用して、前記第1開口部の底面から前記第3膜を除去する第3処理を行い、
前記第2膜をマスクとして使用して、前記第1開口部の下の前記第1膜に第2開口部を形成する、
ことを含み、
前記第1、第2、および第3処理を繰り返し行うことで、前記第2膜を貫通するように前記第1開口部を加工する、半導体装置の製造方法。 - 各々の前記第1処理では、前記第1開口部の深さが前記第2膜の厚さの1/4〜1/2になるように前記第1開口部を形成する、または、前記第1開口部の深さが前記第2膜の厚さの1/4〜1/2だけ増加するように前記第1開口部を加工する、請求項4に記載の半導体装置の製造方法。
- 基板上に第1膜を形成し、
前記第1膜上に第2膜を形成し、
前記第2膜を加工する第1ガスを使用して、前記第2膜に第1開口部を形成するまたは前記第1開口部を加工する第1処理を行い、
金属元素を含む第2ガスを使用して、前記金属元素を含む第3膜を前記第1開口部の側面および底面に形成する第2処理を行い、
前記第3膜を加工する第3ガスを使用して、前記第1開口部の底面から前記第3膜を除去する第3処理を行い、
前記第2膜をマスクとして使用して、前記第1開口部の下の前記第1膜に第2開口部を形成する、
ことを含み、
前記第1、第2、および第3処理を行い、その後、前記第1、第2、および第3処理のうちの前記第1処理のみを行うことで、前記第2膜を貫通するように前記第1開口部を加工する、半導体装置の製造方法。 - 最初の前記第1処理では、前記第1開口部の深さが前記第2膜の厚さの1/4〜1/2になるように前記第1開口部を形成する、請求項6に記載の半導体装置の製造方法。
- 前記第3ガスは、フッ素または塩素を含有するガスを含む、請求項4から7のいずれか1項に記載の半導体装置の製造方法。
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US15/253,816 US10490415B2 (en) | 2016-03-10 | 2016-08-31 | Method of manufacturing 3-dimensional memories including high aspect ratio memory hole patterns |
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JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
US10886293B2 (en) * | 2017-09-07 | 2021-01-05 | Toshiba Memory Corporation | Semiconductor device and method of fabricating the same |
US10734402B2 (en) * | 2017-09-07 | 2020-08-04 | Toshiba Memory Corporation | Semiconductor device and method of fabricating the same |
DE102017216937A1 (de) * | 2017-09-25 | 2019-03-28 | Robert Bosch Gmbh | Verfahren zum Herstellen zumindest einer Durchkontaktierung in einem Wafer |
KR20200123481A (ko) * | 2018-03-16 | 2020-10-29 | 램 리써치 코포레이션 | 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들 |
JP2021167849A (ja) * | 2018-07-19 | 2021-10-21 | コニカミノルタ株式会社 | 金属マスクの製造方法と金属マスク、及び高アスペクト回折格子の製造方法と高アスペクト回折格子 |
JP7173799B2 (ja) * | 2018-09-11 | 2022-11-16 | キオクシア株式会社 | 半導体装置の製造方法およびエッチングガス |
KR20210072826A (ko) * | 2018-11-05 | 2021-06-17 | 램 리써치 코포레이션 | 에칭 챔버의 방향성 증착 |
WO2020096808A1 (en) * | 2018-11-05 | 2020-05-14 | Lam Research Corporation | Method for etching an etch layer |
JP2021145031A (ja) * | 2020-03-11 | 2021-09-24 | キオクシア株式会社 | 半導体装置の製造方法 |
JP2022046329A (ja) * | 2020-09-10 | 2022-03-23 | キオクシア株式会社 | 半導体装置およびその製造方法 |
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