JP6364368B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6364368B2 JP6364368B2 JP2015051995A JP2015051995A JP6364368B2 JP 6364368 B2 JP6364368 B2 JP 6364368B2 JP 2015051995 A JP2015051995 A JP 2015051995A JP 2015051995 A JP2015051995 A JP 2015051995A JP 6364368 B2 JP6364368 B2 JP 6364368B2
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 66
- 229910052799 carbon Inorganic materials 0.000 claims description 66
- 239000007789 gas Substances 0.000 claims description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 56
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 17
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 15
- 239000000460 chlorine Substances 0.000 claims description 14
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 12
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052794 bromium Inorganic materials 0.000 claims description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052801 chlorine Inorganic materials 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 40
- 125000004429 atom Chemical group 0.000 description 15
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 8
- 239000011162 core material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
図1および図2は、第1実施形態の半導体装置の製造方法を示す断面図である。本方法においては、二重側壁転写プロセスが実行される。本方法は例えば、NANDフラッシュメモリ用のL/S(ラインアンドスペース)パターンを形成するために使用される。
図10は、第2実施形態の半導体装置の製造方法を示す断面図である。本方法においては、炭素含有率の変化によるエッチングレートの変化を利用して低誘電率膜(low−k膜)のエッチングが行われる。low−k膜は、通常のシリコン酸化膜よりも低い誘電率を有する絶縁膜である。
4:マスク層、5:レジスト膜、5a:レジストパターン、
6:側壁膜、6a:側壁パターン、
11:基板、12:配線層、12a:配線、
13:第1の被加工膜、14:第2の被加工膜、15:マスク層
Claims (7)
- 基板上に、炭素を含有する第1膜を形成し、
前記第1膜上に、第1の炭素含有率を有する第1のシリコン酸化膜を形成し、
前記第1のシリコン酸化膜上に、前記第1の炭素含有率と異なる第2の炭素含有率を有する第2のシリコン酸化膜を形成し、
臭素または塩素を含有するガスを使用して、前記第1または第2のシリコン酸化膜を選択的にエッチングし、
前記エッチング後に前記第1膜を加工する、
ことを含む半導体装置の製造方法。 - 前記第2の炭素含有率は、前記第1の炭素含有率よりも低く、
前記エッチングでは、前記第2のシリコン酸化膜をマスクとして使用して、前記第1のシリコン酸化膜をエッチングし、
前記加工では、前記第1および第2のシリコン酸化膜の少なくともいずれかをマスクとして使用して、前記第1膜を加工する、
請求項1に記載の半導体装置の製造方法。 - 前記第2のシリコン酸化膜は、炭素を含有する、請求項1または2に記載の半導体装置の製造方法。
- 基板上に、第1の炭素含有率で炭素を含有する第1のシリコン酸化膜を形成し、
前記第1のシリコン酸化膜上に、前記第1の炭素含有率と異なる第2の炭素含有率で炭素を含有する第2のシリコン酸化膜を形成し、
臭素または塩素を含有するガスを使用して、前記第1または第2のシリコン酸化膜を選択的にエッチングする、
ことを含む半導体装置の製造方法。 - 前記第2の炭素含有率は、前記第1の炭素含有率よりも高く、
前記エッチングでは、前記第1のシリコン酸化膜をストッパとして使用して、前記第2のシリコン酸化膜をエッチングする、
請求項4に記載の半導体装置の製造方法。 - 前記第1および第2の炭素含有率の一方は、5%未満であり、
前記第1および第2の炭素含有率の他方は、5%以上である、
請求項1から5のいずれか1項に記載の半導体装置の製造方法。 - 前記ガスは、臭化水素ガス、塩化水素ガス、臭素ガス、または塩素ガスを含有する、請求項1から6のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015051995A JP6364368B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置の製造方法 |
US14/833,706 US20160276166A1 (en) | 2015-03-16 | 2015-08-24 | Method of manufacturing semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
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JP2015051995A JP6364368B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016174013A JP2016174013A (ja) | 2016-09-29 |
JP6364368B2 true JP6364368B2 (ja) | 2018-07-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015051995A Active JP6364368B2 (ja) | 2015-03-16 | 2015-03-16 | 半導体装置の製造方法 |
Country Status (2)
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US (1) | US20160276166A1 (ja) |
JP (1) | JP6364368B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2021040008A (ja) * | 2019-09-02 | 2021-03-11 | キオクシア株式会社 | 半導体装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1070346A1 (en) * | 1998-04-02 | 2001-01-24 | Applied Materials, Inc. | Method for etching low k dielectrics |
JP2001110780A (ja) * | 1999-10-07 | 2001-04-20 | Nec Corp | 半導体装置の製造方法 |
JP4014456B2 (ja) * | 2002-06-19 | 2007-11-28 | 株式会社日立ハイテクノロジーズ | エッチング処理方法 |
JP2004071774A (ja) * | 2002-08-05 | 2004-03-04 | Tokyo Electron Ltd | マルチチャンバシステムを用いたプラズマ処理方法 |
JP5391594B2 (ja) * | 2008-07-02 | 2014-01-15 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
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2015
- 2015-03-16 JP JP2015051995A patent/JP6364368B2/ja active Active
- 2015-08-24 US US14/833,706 patent/US20160276166A1/en not_active Abandoned
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US20160276166A1 (en) | 2016-09-22 |
JP2016174013A (ja) | 2016-09-29 |
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