JP6483843B2 - アレイ基板及びその製造方法、表示装置 - Google Patents
アレイ基板及びその製造方法、表示装置 Download PDFInfo
- Publication number
- JP6483843B2 JP6483843B2 JP2017536997A JP2017536997A JP6483843B2 JP 6483843 B2 JP6483843 B2 JP 6483843B2 JP 2017536997 A JP2017536997 A JP 2017536997A JP 2017536997 A JP2017536997 A JP 2017536997A JP 6483843 B2 JP6483843 B2 JP 6483843B2
- Authority
- JP
- Japan
- Prior art keywords
- gate insulating
- gate
- electrode
- insulating part
- base substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 56
- 238000000059 patterning Methods 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 3
- 230000003071 parasitic effect Effects 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
11 ゲートライン
12 データライン
13 薄膜トランジスター
131 ゲート電極
132 ゲート絶縁層
1321 第1ゲート絶縁部
1322 第2ゲート絶縁部
133 活性層
134 ソース電極
135 ドレイン電極
136 遮光層
137 絶縁層
14 導電性パッド
15 第1ビアホール
16 第2ビアホール
17 パッシベーション層
18 画素電極
Claims (10)
- ベース基板と、前記ベース基板上で横縦方向に交差して配置されたゲートラインおよびデータラインとを備え、画素ユニットが前記ゲートライン及び前記データラインに囲まれてなり、前記画素ユニット内に薄膜トランジスターが設置され、前記薄膜トランジスターがゲート電極、ゲート絶縁層、活性層、ソース電極、及びドレイン電極を含み、前記ゲート絶縁層が第1ゲート絶縁部及び第2ゲート絶縁部を含み、前記ゲート電極が前記第1ゲート絶縁部と前記第2ゲート絶縁部との間に位置し、前記第2ゲート絶縁部が前記ゲート電極と前記活性層との間に位置し、
アレイ基板が、前記ゲートラインと前記データラインとの交差位置に位置する導電性パッドを更に備え、
前記第1ゲート絶縁部、前記第2ゲート絶縁部および前記ゲートラインが前記導電性パッドの前記ベース基板と反対の側に配置されており、
前記ゲートラインの両側に位置する前記ゲート絶縁層に、前記導電性パッドに対応する第1ビアホールが設置され、前記データラインが前記第1ビアホールを介して前記導電性パッドに接続されるアレイ基板。 - 前記ゲートラインに垂直な方向において、前記導電性パッドの寸法が前記ゲートラインの寸法よりも大きい請求項1に記載のアレイ基板。
- 前記薄膜トランジスターの箇所において、前記第1ゲート絶縁部、前記ゲート電極、前記第2ゲート絶縁部、前記活性層、同一層に設置された前記ソース電極及びドレイン電極が、前記ベース基板から離れる方向に向けて前記ベース基板上に順次に設置され、
前記ゲートラインと前記データラインとが交差する箇所において、前記導電性パッド、前記第1ゲート絶縁部、前記ゲートライン、前記第2ゲート絶縁部、及び前記データラインが、前記ベース基板から離れる方向に向けて前記ベース基板上に順次に設置される、請求項1または2に記載のアレイ基板。 - 前記薄膜トランジスターの箇所において、同一層に設置された前記ソース電極及びドレイン電極、前記活性層、前記第2ゲート絶縁部、前記ゲート電極、前記第1ゲート絶縁部が、前記ベース基板から離れる方向に向けて前記ベース基板上に順次に設置され、前記データラインが前記ゲート絶縁層における第2ビアホールを介して前記ソース電極に接続され、
前記ゲートラインと前記データラインとが交差する箇所において、前記導電性パッド、前記第2ゲート絶縁部、前記ゲートライン、前記第1ゲート絶縁部、及び前記データラインが、前記ベース基板上に順次に設置される、請求項1または2に記載のアレイ基板。 - 前記第2ゲート絶縁部の誘電率が前記第1ゲート絶縁部の誘電率よりも大きい請求項1から4のいずれか1項に記載のアレイ基板。
- 前記第1ゲート絶縁部の厚みが1000Å〜3000Åであり、前記第2ゲート絶縁部の厚みが1000Å〜3000Åである請求項5に記載のアレイ基板。
- 請求項1から6のいずれか1項に記載のアレイ基板を備える表示装置。
- ベース基板上に導電性パッド金属層を形成し、パターニング工程によって導電性パッドを含むパターンを形成し、
前記導電性パッドを含むパターンが形成された前記ベース基板上に、第1ゲート絶縁部を形成し、
前記第1ゲート絶縁部が形成された前記ベース基板上に、ゲート電極金属層を形成し、パターニング工程によってゲートライン及びゲート電極を含むパターンを形成し、
前記ゲートライン及び前記ゲート電極を含むパターンが形成された前記ベース基板上に、第2ゲート電極絶縁薄膜を形成し、パターニング工程によって第2ゲート絶縁部を形成し、
前記第2ゲート絶縁部が形成された前記ベース基板上に、半導体層を形成し、パターニング工程によって活性層を含むパターンを形成し、
パターニング工程によって、前記ゲートラインの両側における前記第1ゲート絶縁部および前記第2ゲート絶縁部に、前記導電性パッドに対応する第1ビアホールを形成し、
前記第1ビアホールが形成された前記ベース基板上に、ソース・ドレイン電極金属層を形成し、パターニング工程によってデータライン、ソース電極、及びドレイン電極を含むパターンを形成し、前記データラインと前記ゲートラインとが前記導電性パッドの上方で交差し、前記データラインが前記第1ビアホールを介して前記導電性パッドに接続される、アレイ基板の製造方法。 - ベース基板上にソース・ドレイン電極金属層を形成し、パターニング工程によってソース電極、ドレイン電極、及び導電性パッドを含むパターンを形成し、
前記ソース電極、前記ドレイン電極、及び前記導電性パッドを含むパターンが形成された前記ベース基板上に、半導体層を形成し、パターニング工程によって活性層を含むパターンを形成し、
前記活性層を含むパターンが形成された前記ベース基板上に、第2ゲート絶縁薄膜を形成し、パターニング工程によって第2ゲート絶縁部を形成し、
前記第2ゲート絶縁部が形成された前記ベース基板上に、ゲート電極金属層を形成し、パターニング工程によってゲートライン及びゲート電極を含むパターンを形成し、
前記ゲートライン及び前記ゲート電極を含むパターンが形成された前記ベース基板上に、第1ゲート絶縁部を形成し、
パターニング工程によって、前記第1ゲート絶縁部および前記第2ゲート絶縁部に、前記導電性パッドに対応する第1ビアホールと前記ソース電極に対応する第2ビアホールとを形成し、
前記第1ビアホール及び前記第2ビアホールが形成された前記ゲート絶縁層上にデータライン金属層を形成し、パターニング工程によってデータラインを含むパターンを形成し、前記データラインは、前記第1ビアホールを介して前記導電性パッドに接続され、前記第2ビアホールを介して前記ソース電極に接続される、アレイ基板の製造方法。 - 前記第1ゲート絶縁部及び前記第2ゲート電極絶縁薄膜を蒸着形成し、且つ、パターニング工程によって形成された前記第2ゲート絶縁部の誘電率が前記第1ゲート絶縁部の誘電率よりも大きくなるように、前記第2ゲート電極絶縁薄膜を蒸着形成する工程パラメータが前記第1ゲート絶縁部を蒸着形成する工程パラメータと異なる、請求項8または9に記載のアレイ基板の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410525371.1 | 2014-09-30 | ||
CN201410525371.1A CN104392999B (zh) | 2014-09-30 | 2014-09-30 | 一种阵列基板及其制作方法、显示装置 |
PCT/CN2015/076842 WO2016050052A1 (zh) | 2014-09-30 | 2015-04-17 | 阵列基板及其制作方法、显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017530429A JP2017530429A (ja) | 2017-10-12 |
JP6483843B2 true JP6483843B2 (ja) | 2019-03-13 |
Family
ID=52610874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017536997A Active JP6483843B2 (ja) | 2014-09-30 | 2015-04-17 | アレイ基板及びその製造方法、表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9620527B2 (ja) |
EP (1) | EP3203518A4 (ja) |
JP (1) | JP6483843B2 (ja) |
KR (1) | KR20160053840A (ja) |
CN (1) | CN104392999B (ja) |
WO (1) | WO2016050052A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104392999B (zh) * | 2014-09-30 | 2017-03-29 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN104977764A (zh) * | 2015-06-18 | 2015-10-14 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制作方法、液晶显示器 |
CN106024637B (zh) * | 2016-07-20 | 2018-06-29 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
CN106483726B (zh) * | 2016-12-21 | 2023-07-25 | 昆山龙腾光电股份有限公司 | 薄膜晶体管阵列基板及制作方法和液晶显示面板 |
CN108511457B (zh) * | 2017-02-28 | 2020-09-01 | 昆山国显光电有限公司 | 一种tft像素结构、阵列基板及其制作方法、显示装置 |
CN107302032B (zh) * | 2017-06-19 | 2020-05-22 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板、显示面板 |
KR102008418B1 (ko) * | 2017-08-17 | 2019-08-09 | 전자부품연구원 | 중첩 전하 용량 감소를 위한 표시 패널 및 이의 제조 방법 |
CN108807549B (zh) * | 2018-06-01 | 2021-03-23 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板及其制造方法 |
WO2020006717A1 (zh) * | 2018-07-04 | 2020-01-09 | 深圳市柔宇科技有限公司 | 阵列基板及其制造方法、显示装置 |
CN109887885A (zh) * | 2019-03-01 | 2019-06-14 | 武汉华星光电技术有限公司 | 阵列基板的制作方法及阵列基板 |
WO2021016927A1 (en) * | 2019-07-31 | 2021-02-04 | Boe Technology Group Co., Ltd. | Array substrate, display apparatus, and method of fabricating array substrate |
CN111129035A (zh) * | 2019-12-24 | 2020-05-08 | 云谷(固安)科技有限公司 | 阵列基板、显示面板及显示装置 |
CN111682033A (zh) * | 2020-07-07 | 2020-09-18 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
CN118414574A (zh) * | 2022-11-30 | 2024-07-30 | 京东方科技集团股份有限公司 | 像素单元结构及其制备方法、显示面板及其制备方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0812354B2 (ja) * | 1987-10-14 | 1996-02-07 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
JPH0553137A (ja) * | 1991-08-22 | 1993-03-05 | Seiko Epson Corp | アクテイブマトリツクス基板とその製造方法 |
JPH10260400A (ja) * | 1997-03-19 | 1998-09-29 | Toshiba Corp | 液晶表示素子 |
JP3678587B2 (ja) * | 1998-08-05 | 2005-08-03 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
JP2003323138A (ja) * | 2002-02-01 | 2003-11-14 | Seiko Epson Corp | 回路基板、電気光学装置、電子機器 |
KR100918279B1 (ko) * | 2002-12-23 | 2009-09-18 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
JP2007188936A (ja) | 2006-01-11 | 2007-07-26 | Epson Imaging Devices Corp | 表示装置 |
KR101392208B1 (ko) * | 2008-01-22 | 2014-05-08 | 삼성디스플레이 주식회사 | 표시기판, 이의 제조방법 및 이를 갖는 표시장치 |
KR101488925B1 (ko) * | 2008-06-09 | 2015-02-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법, 및 이를 갖는 표시장치 |
WO2011078398A1 (en) | 2009-12-25 | 2011-06-30 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
KR101361925B1 (ko) * | 2010-07-07 | 2014-02-21 | 엘지디스플레이 주식회사 | 저저항배선 구조를 갖는 박막 트랜지스터 기판 및 그 제조 방법 |
KR101785028B1 (ko) * | 2011-01-20 | 2017-11-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
JP2012195509A (ja) * | 2011-03-17 | 2012-10-11 | Canon Inc | 半導体装置及びその製造方法 |
TWI440186B (zh) * | 2011-09-23 | 2014-06-01 | E Ink Holdings Inc | 驅動基板及使用其之顯示裝置 |
US9557619B2 (en) * | 2011-09-26 | 2017-01-31 | Apple Inc. | Data line-to-pixel decoupling |
KR20140007688A (ko) * | 2012-07-10 | 2014-01-20 | 삼성디스플레이 주식회사 | 쇼트 불량 리페어 방법, 상기 리페어 방법에 의해 제조된 표시 장치 및 유기 발광 표시 장치 |
KR20140091808A (ko) | 2013-01-11 | 2014-07-23 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
US9583515B2 (en) * | 2013-04-25 | 2017-02-28 | Sharp Kabushiki Kaisha | Semiconductor device including substrate which is used in display devices |
KR20150011702A (ko) * | 2013-07-23 | 2015-02-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 유기 발광 표시 장치, 및 박막 트랜지스터의 제조 방법 |
CN103531640A (zh) * | 2013-11-01 | 2014-01-22 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法和显示装置 |
KR102150859B1 (ko) * | 2014-01-13 | 2020-09-03 | 삼성디스플레이 주식회사 | 표시장치 |
KR20160037314A (ko) * | 2014-09-26 | 2016-04-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
CN104392999B (zh) * | 2014-09-30 | 2017-03-29 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
KR20160080974A (ko) * | 2014-12-30 | 2016-07-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이의 제조 방법 |
-
2014
- 2014-09-30 CN CN201410525371.1A patent/CN104392999B/zh active Active
-
2015
- 2015-04-17 WO PCT/CN2015/076842 patent/WO2016050052A1/zh active Application Filing
- 2015-04-17 US US14/769,577 patent/US9620527B2/en active Active
- 2015-04-17 EP EP15749708.2A patent/EP3203518A4/en not_active Withdrawn
- 2015-04-17 JP JP2017536997A patent/JP6483843B2/ja active Active
- 2015-04-17 KR KR1020157023158A patent/KR20160053840A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20160053840A (ko) | 2016-05-13 |
CN104392999B (zh) | 2017-03-29 |
EP3203518A1 (en) | 2017-08-09 |
US20160254283A1 (en) | 2016-09-01 |
CN104392999A (zh) | 2015-03-04 |
EP3203518A4 (en) | 2018-06-27 |
US9620527B2 (en) | 2017-04-11 |
JP2017530429A (ja) | 2017-10-12 |
WO2016050052A1 (zh) | 2016-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6483843B2 (ja) | アレイ基板及びその製造方法、表示装置 | |
US9927911B2 (en) | Touch display panel and fabrication method thereof, and touch display apparatus | |
WO2016141709A1 (zh) | 阵列基板及其制作方法、显示装置 | |
US20160197107A1 (en) | Thin film transistor substrate having metal oxide semiconductor and manufacturing the same | |
JP6521534B2 (ja) | 薄膜トランジスタとその作製方法、アレイ基板及び表示装置 | |
WO2016197502A1 (zh) | 薄膜晶体管及制作方法、阵列基板及制作方法和显示装置 | |
US9971437B2 (en) | Array substrate, display device having the same, and manufacturing method thereof | |
EP2983204B1 (en) | Display device and method for manufacturing the same | |
US10539820B2 (en) | Touch-panel liquid crystal display device | |
CN104465652B (zh) | 一种阵列基板、显示装置及阵列基板的制作方法 | |
WO2017118123A1 (en) | Display substrate, fabrication method for forming the same, and display device containing the same | |
CN106855669A (zh) | 阵列基板及其制造方法、显示面板以及显示装置 | |
JP7042621B2 (ja) | アレイ基板、表示パネル、アレイ基板を備える表示装置及びアレイ基板の製造方法 | |
KR102564127B1 (ko) | 디스플레이 패널 | |
WO2019137044A1 (zh) | 像素结构及其制作方法、阵列基板和显示装置 | |
CN106856199B (zh) | 显示面板及其制造方法 | |
KR20130024328A (ko) | 터치 스크린 패널 | |
TWI595298B (zh) | 顯示面板 | |
US9947693B2 (en) | Array substrate, method for manufacturing the same, and display device | |
TWI599833B (zh) | 陣列基板及具有該陣列基板的液晶顯示面板 | |
KR102065764B1 (ko) | 박막 트랜지스터 표시판 | |
KR102095241B1 (ko) | 터치 스크린 패널 | |
US11069719B2 (en) | Array substrate and method of manufacturing the same, display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180921 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180919 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190121 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190214 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6483843 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |