JP6473131B2 - 方位角方向及び半径方向分布制御を備えたマルチゾーンガス注入アセンブリ - Google Patents
方位角方向及び半径方向分布制御を備えたマルチゾーンガス注入アセンブリ Download PDFInfo
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- 238000002347 injection Methods 0.000 title claims description 66
- 239000007924 injection Substances 0.000 title claims description 66
- 238000009826 distribution Methods 0.000 title claims description 39
- 238000000034 method Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 19
- 239000007789 gas Substances 0.000 description 273
- 239000000463 material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Chemical Vapour Deposition (AREA)
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- Plasma Technology (AREA)
Description
本開示は、半導体ウェハ等のワークピースを処理するためのプラズマリアクタ内の処理ガス分布に関する。
プラズマリアクタのチャンバ内における処理ガス分布の制御は、プラズマ処理中にワークピース上のエッチング速度分布又は堆積速度分布のプロセス制御に影響を与える。ガス注入ノズルは、チャンバの中央部と周辺部に配置することができる。チャンバの中央部と周辺部の両方でガス注入を制御することが望ましい。1つの課題は、処理ガス流量の半径方向分布を制御するシステムは、一般的に、処理ガス流量の方位角方向分布を制御しないことである。本明細書で用いるように、用語「方位角」は、円筒状の処理チャンバ内の周方向を指す。別の1つの課題は、側壁近くのガス注入器を用いてガス流量の方位角分布を制御するシステムは、方位角方向に沿った圧力降下に苦しむことである。
Claims (14)
- 天井及び側壁を有するチャンバと、前記天井に結合され、前記天井を過ぎて前記チャンバ内へと延在する調整可能なガスノズルであって、前記調整可能なガスノズルは、前記側壁に向かってガスを注入する側部ガスノズルを含む調整可能なガスノズルと、前記チャンバの周りの側部ガスプレナムと、
前記側部ガスプレナムに結合された複数のN個のガス入口と、前記側部ガスプレナムから半径方向に延びる複数の側部ガス出口と、
前記N個のガス入口にそれぞれ結合されたN個の出力を有するN個口ガス流量比コントローラと、
M個の出力を有するM個口ガス流量比コントローラであって、前記M個の出力のそれぞれ1つは、前記調整可能なガスノズル及び前記N個口ガス流量比コントローラのガス入力に結合されるM個口ガス流量比コントローラとを含むプラズマリアクタ。 - 前記調整可能なガスノズルは、チャンバの中央に向かってガスを注入するように構成された中央ガスノズルを含み、前記調整可能なガスノズルは、前記M個の出力のうちの2つに結合された2つのガス入力を有し、前記2つのガス入力のうちの第1のものは、前記中央ガスノズルに結合され、前記2つのガス入力のうちの第2のものは、前記側部ガスノズルに結合され、Mは3であり、Nは4である請求項1記載のプラズマリアクタ。
- 前記M個口ガス流量比コントローラのガス入力に結合されたガス供給パネルを含む請求項1記載のプラズマリアクタ。
- 前記M個口ガス流量比コントローラと前記N個口ガス流量比コントローラに結合されたプロセスコントローラと、
前記プロセスコントローラに結合されたユーザインターフェースを含む請求項3記載のプラズマリアクタ。 - チャンバと、前記チャンバに結合された調整可能なガスノズルと、前記チャンバの周りの側部ガスプレナムと、
前記側部ガスプレナムに結合された複数のN個のガス入口と、前記側部ガスプレナムから半径方向に延びる複数の側部ガス出口と、
前記N個のガス入口にそれぞれ結合されたN個の出力を有するN個口ガス流量比コントローラと、
M個の出力を有するM個口ガス流量比コントローラであって、前記M個の出力のそれぞれ1つは、前記調整可能なガスノズル及び前記N個口ガス流量比コントローラのガス入力に結合されるM個口ガス流量比コントローラと、
前記側部ガスプレナムは、複数の組のガス流チャネルを含み、前記組のガス流チャネルの各々1つは、
前記複数の側部ガス出口の対応する一対に結合された一対の端部を有する円弧状ガス分配チャネルと、
円弧状ガス供給チャネルであって、前記円弧状ガス供給チャネルの一端は、前記複数のN個のガス入口の対応するものに接続され、前記円弧状ガス供給チャネルの反対端は、前記ガス分配チャネルの中間点近くで前記ガス分配チャネルに結合される円弧状ガス供給チャネルとを含むプラズマリアクタ。 - 前記複数の組のガス流チャネルは、経路長が等しい請求項5記載のプラズマリアクタ。
- 前記チャンバはチャンバ内部を含み、前記側部ガスプレナムはライナエッジを含み、前記プラズマリアクタは、
前記ライナエッジの上方のガス送出リングであって、前記複数の組のガス流チャネルは、前記ガス送出リング内に形成されるガス送出リングと、
前記ガス送出リングの上方の上部ライナリングであって、前記複数の側部ガス出口は、前記上部ライナリング内へ延び、前記上部ライナリングは、前記チャンバ内部に対向する上部ライナリング面を含む上部ライナリングとを含む請求項5記載のプラズマリアクタ。 - 前記複数の側部ガス出口の各々は、
前記上部ライナリング内で前記チャンバ内部へ向かって半径方向に延び、軸方向に延びるガス送出インサート収容穴を含む側部ガス注入ノズルと、
前記ガス送出リングから前記軸方向へ延びるガス送出インサート収容穴内へ延びるガス送出インサートを含む請求項7記載のプラズマリアクタ。 - 前記ガス送出インサート内の軸方向内部ガス流路と、前記軸方向に延びるガス送出インサート穴の側壁を貫通する半径方向内部ガス流ノズル通路を含み、前記軸方向内部ガス流路は、前記半径方向内部ガス流ノズル通路と整合している請求項8記載のプラズマリアクタ。
- 前記上部ライナリングは、前記上部ライナリング面内に複数のノズルポケットを含み、前記側部ガス注入ノズルは、前記ノズルポケットの対応するものの中へ延びており、
前記側部ガス注入ノズルは、前記側部ガス注入ノズルと同心の複数のOリングノズル溝を含み、前記プラズマリアクタは、前記複数のOリングノズル溝内に前記ノズルポケットの対応するものの内部側壁に対して圧縮された第1の複数のOリングを更に含む請求項9記載のプラズマリアクタ。 - 前記側部ガス注入ノズルは、
円筒状外側ノズル面であって、前記Oリングノズル溝が前記円筒状外側ノズル面に対して窪んでいるノズル溝面を画定する円筒状外側ノズル面と、
軸方向排気スロットであって、(a)前記ノズルポケット内部で前記側部ガス注入ノズルの一端から延びる前記円筒状外側ノズル面内のスロット部と、(b)前記ノズル溝面内のスロット部とを含む軸方向排気スロットとを含む請求項10記載のプラズマリアクタ。 - 前記円筒状外側ノズル面と前記ノズルポケットの対応するものの前記内部側壁との間にギャップを含む請求項11記載のプラズマリアクタ。
- 複数のノズルポケットを含む上部ライナリングと、
前記ノズルポケット内に延びる複数の側部ガス注入ノズルであって、前記複数の側部ガス注入ノズルの各々は、
外側ノズル面と、前記外側ノズル面内にあり、前記側部ガス注入ノズルと同心である複数のOリングノズル溝と、
前記ノズルポケットの対応するものの内部側壁に対して圧縮された前記複数のOリングノズル溝内の第1の複数のOリングとを含む複数の側部ガス注入ノズルとを含み、
前記側部ガス注入ノズルは、
前記外側ノズル面に対して窪んでおり、前記Oリングノズル溝内に形成されたノズル溝面と、
前記ノズルポケット内部で前記側部ガス注入ノズルの一端から延びる前記外側ノズル面内のスロット部と、前記ノズル溝面内のスロット部とを含む軸方向排気スロットとを含む側部ガス注入キット。 - 前記外側ノズル面と前記ノズルポケットの対応するものの内部側壁との間にギャップを含み、前記ノズル溝面内の前記スロット部は、前記第1の複数のOリングの周囲に排気経路を提供し、前記外側ノズル面内の前記スロット部は、前記ギャップへの排気経路を提供する請求項13記載の側部ガス注入キット。
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PCT/US2014/014389 WO2014163742A1 (en) | 2013-03-12 | 2014-02-03 | Multi-zone gas injection assembly with azimuthal and radial distribution control |
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US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
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