JP6426538B2 - アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 - Google Patents
アルキルアルコキシシラ環状化合物及びそれを用いた膜の堆積方法 Download PDFInfo
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- JP6426538B2 JP6426538B2 JP2015121341A JP2015121341A JP6426538B2 JP 6426538 B2 JP6426538 B2 JP 6426538B2 JP 2015121341 A JP2015121341 A JP 2015121341A JP 2015121341 A JP2015121341 A JP 2015121341A JP 6426538 B2 JP6426538 B2 JP 6426538B2
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- methyl
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- branched
- linear
- silacyclopentane
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- 238000000151 deposition Methods 0.000 title claims description 29
- 150000001923 cyclic compounds Chemical class 0.000 title claims description 28
- 125000005055 alkyl alkoxy group Chemical group 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 104
- 239000003361 porogen Substances 0.000 claims description 97
- 239000002243 precursor Substances 0.000 claims description 83
- 229910052799 carbon Inorganic materials 0.000 claims description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 61
- 239000012528 membrane Substances 0.000 claims description 59
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 claims description 45
- 239000004914 cyclooctane Substances 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 43
- 125000000217 alkyl group Chemical group 0.000 claims description 40
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- 238000006243 chemical reaction Methods 0.000 claims description 33
- 239000003153 chemical reaction reagent Substances 0.000 claims description 31
- 238000011282 treatment Methods 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 150000002430 hydrocarbons Chemical class 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- -1 CO 2 Inorganic materials 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 23
- 125000004122 cyclic group Chemical group 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- 150000004820 halides Chemical class 0.000 claims description 17
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 16
- 125000003342 alkenyl group Chemical group 0.000 claims description 15
- 125000000304 alkynyl group Chemical group 0.000 claims description 15
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 15
- 125000001072 heteroaryl group Chemical group 0.000 claims description 15
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 14
- UUAHJDYTCBLNOM-UHFFFAOYSA-N 1-ethoxy-1-methylsilolane Chemical compound CCO[Si]1(C)CCCC1 UUAHJDYTCBLNOM-UHFFFAOYSA-N 0.000 claims description 14
- 125000000172 C5-C10 aryl group Chemical group 0.000 claims description 14
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- AYLOVPLFPXTLAL-UHFFFAOYSA-N 1-methyl-1-propan-2-yloxysilolane Chemical compound CC(C)O[Si]1(C)CCCC1 AYLOVPLFPXTLAL-UHFFFAOYSA-N 0.000 claims description 11
- 239000004215 Carbon black (E152) Substances 0.000 claims description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 11
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- 229910052734 helium Inorganic materials 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 11
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- 125000004429 atom Chemical group 0.000 claims description 10
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 9
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- 239000007800 oxidant agent Substances 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- YDUYEADVWCKZKY-UHFFFAOYSA-N 1-methoxy-1-methylsilinane Chemical compound CO[Si]1(C)CCCCC1 YDUYEADVWCKZKY-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 8
- 229910017840 NH 3 Inorganic materials 0.000 claims description 8
- 125000005343 heterocyclic alkyl group Chemical group 0.000 claims description 8
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- NUZXXBHRXSBTCR-UHFFFAOYSA-N 1-methyl-1-propan-2-yloxysilinane Chemical compound CC(C)O[Si]1(C)CCCCC1 NUZXXBHRXSBTCR-UHFFFAOYSA-N 0.000 claims description 7
- SAZZBBXYOCAGFA-UHFFFAOYSA-N 1-methyl-1-propoxysilolane Chemical compound CCCO[Si]1(C)CCCC1 SAZZBBXYOCAGFA-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229920006395 saturated elastomer Polymers 0.000 claims description 7
- SNOOUWRIMMFWNE-UHFFFAOYSA-M sodium;6-[(3,4,5-trimethoxybenzoyl)amino]hexanoate Chemical compound [Na+].COC1=CC(C(=O)NCCCCCC([O-])=O)=CC(OC)=C1OC SNOOUWRIMMFWNE-UHFFFAOYSA-M 0.000 claims description 7
- VCJPCEVERINRSG-UHFFFAOYSA-N 1,2,4-trimethylcyclohexane Chemical compound CC1CCC(C)C(C)C1 VCJPCEVERINRSG-UHFFFAOYSA-N 0.000 claims description 6
- GDHWWOUGYSPUOY-UHFFFAOYSA-N 1-ethoxy-1-methylsilinane Chemical compound CCO[Si]1(C)CCCCC1 GDHWWOUGYSPUOY-UHFFFAOYSA-N 0.000 claims description 6
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 6
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 6
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 6
- CRPUJAZIXJMDBK-UHFFFAOYSA-N camphene Chemical compound C1CC2C(=C)C(C)(C)C1C2 CRPUJAZIXJMDBK-UHFFFAOYSA-N 0.000 claims description 6
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical class C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 claims description 6
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 6
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011541 reaction mixture Substances 0.000 claims description 6
- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical class CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 claims description 6
- ONZADLMPEWVXME-UHFFFAOYSA-N 1-ethoxy-1-methylsiletane Chemical compound C[Si]1(CCC1)OCC ONZADLMPEWVXME-UHFFFAOYSA-N 0.000 claims description 4
- NGGMZQSNWYOSKN-UHFFFAOYSA-N 1-ethoxysiletane Chemical compound C(C)O[SiH]1CCC1 NGGMZQSNWYOSKN-UHFFFAOYSA-N 0.000 claims description 4
- LPDSXSAKMMQUIF-UHFFFAOYSA-N 1-ethoxysilolane Chemical compound C(C)O[SiH]1CCCC1 LPDSXSAKMMQUIF-UHFFFAOYSA-N 0.000 claims description 4
- ILFXTFRAOMARNH-UHFFFAOYSA-N 1-methoxy-1-methylsilolane Chemical compound CO[Si]1(C)CCCC1 ILFXTFRAOMARNH-UHFFFAOYSA-N 0.000 claims description 4
- ZTPMWTONGNDGDS-UHFFFAOYSA-N 1-methoxysiletane Chemical compound CO[SiH]1CCC1 ZTPMWTONGNDGDS-UHFFFAOYSA-N 0.000 claims description 4
- XVEKCESPGYCKMZ-UHFFFAOYSA-N 1-methoxysilolane Chemical compound CO[SiH]1CCCC1 XVEKCESPGYCKMZ-UHFFFAOYSA-N 0.000 claims description 4
- CJQOQHAKRYWGPF-UHFFFAOYSA-N 1-methyl-1-propan-2-yloxysiletane Chemical compound CC(C)O[Si]1(C)CCC1 CJQOQHAKRYWGPF-UHFFFAOYSA-N 0.000 claims description 4
- AANQAVKMDYGWMR-UHFFFAOYSA-N 1-propan-2-yloxysiletane Chemical compound C(C)(C)O[SiH]1CCC1 AANQAVKMDYGWMR-UHFFFAOYSA-N 0.000 claims description 4
- QBNFMOLKFUOLTC-UHFFFAOYSA-N 1-propan-2-yloxysilinane Chemical compound C(C)(C)O[SiH]1CCCCC1 QBNFMOLKFUOLTC-UHFFFAOYSA-N 0.000 claims description 4
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N 2,2-dimethylbutane Chemical compound CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 claims description 4
- SZMPOTNSNKYZSC-UHFFFAOYSA-N C[Si]1(CCC1)OC Chemical compound C[Si]1(CCC1)OC SZMPOTNSNKYZSC-UHFFFAOYSA-N 0.000 claims description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 4
- OJOWICOBYCXEKR-APPZFPTMSA-N (1S,4R)-5-ethylidenebicyclo[2.2.1]hept-2-ene Chemical compound CC=C1C[C@@H]2C[C@@H]1C=C2 OJOWICOBYCXEKR-APPZFPTMSA-N 0.000 claims description 3
- TXNWMICHNKMOBR-UHFFFAOYSA-N 1,2-dimethylcyclohexene Chemical class CC1=C(C)CCCC1 TXNWMICHNKMOBR-UHFFFAOYSA-N 0.000 claims description 3
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical class C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004912 1,5-cyclooctadiene Chemical class 0.000 claims description 3
- SDRZFSPCVYEJTP-UHFFFAOYSA-N 1-ethenylcyclohexene Chemical compound C=CC1=CCCCC1 SDRZFSPCVYEJTP-UHFFFAOYSA-N 0.000 claims description 3
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- WSTYNZDAOAEEKG-UHFFFAOYSA-N Mayol Chemical class CC1=C(O)C(=O)C=C2C(CCC3(C4CC(C(CC4(CCC33C)C)=O)C)C)(C)C3=CC=C21 WSTYNZDAOAEEKG-UHFFFAOYSA-N 0.000 claims description 3
- PXRCIOIWVGAZEP-UHFFFAOYSA-N Primaeres Camphenhydrat Natural products C1CC2C(O)(C)C(C)(C)C1C2 PXRCIOIWVGAZEP-UHFFFAOYSA-N 0.000 claims description 3
- XCPQUQHBVVXMRQ-UHFFFAOYSA-N alpha-Fenchene Natural products C1CC2C(=C)CC1C2(C)C XCPQUQHBVVXMRQ-UHFFFAOYSA-N 0.000 claims description 3
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- ZYPYEBYNXWUCEA-UHFFFAOYSA-N camphenilone Natural products C1CC2C(=O)C(C)(C)C1C2 ZYPYEBYNXWUCEA-UHFFFAOYSA-N 0.000 claims description 3
- 239000004913 cyclooctene Chemical class 0.000 claims description 3
- URYYVOIYTNXXBN-UPHRSURJSA-N cyclooctene Chemical class C1CCC\C=C/CC1 URYYVOIYTNXXBN-UPHRSURJSA-N 0.000 claims description 3
- 150000001993 dienes Chemical class 0.000 claims description 3
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical class C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 claims description 3
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- POCNHGFJLGYFIK-UHFFFAOYSA-N methylcyclooctane Chemical compound CC1CCCCCCC1 POCNHGFJLGYFIK-UHFFFAOYSA-N 0.000 claims description 3
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 claims description 3
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- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 claims description 3
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical class CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 claims description 3
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 claims description 3
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- PHICBFWUYUCFKS-UHFFFAOYSA-N spiro[4.4]nonane Chemical compound C1CCCC21CCCC2 PHICBFWUYUCFKS-UHFFFAOYSA-N 0.000 claims description 3
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- TUVSHNCAUPHRAF-UHFFFAOYSA-N 1-propoxysilolane Chemical compound C(CC)O[SiH]1CCCC1 TUVSHNCAUPHRAF-UHFFFAOYSA-N 0.000 claims 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZEXYGAKMGFQRNC-UHFFFAOYSA-N 1,1-diethoxy-2,5-dihydrosilole Chemical compound CCO[Si]1(OCC)CC=CC1 ZEXYGAKMGFQRNC-UHFFFAOYSA-N 0.000 description 1
- KDQBKCRYCZJUAE-UHFFFAOYSA-N 1,1-dimethylsilolane Chemical compound C[Si]1(C)CCCC1 KDQBKCRYCZJUAE-UHFFFAOYSA-N 0.000 description 1
- 125000001399 1,2,3-triazolyl group Chemical group N1N=NC(=C1)* 0.000 description 1
- MUVALSXEYCDMFJ-UHFFFAOYSA-N 1,2-dimethylcycloocta-1,3-diene Chemical compound CC1=C(C)C=CCCCC1 MUVALSXEYCDMFJ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- 241000656145 Thyrsites atun Species 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- GKDODGRQNSAYGJ-UHFFFAOYSA-N [C].C1CCCCCCC1 Chemical compound [C].C1CCCCCCC1 GKDODGRQNSAYGJ-UHFFFAOYSA-N 0.000 description 1
- CIBUDKJODXACBL-UHFFFAOYSA-N [SiH3][SiH2]Br Chemical compound [SiH3][SiH2]Br CIBUDKJODXACBL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- FXMNVBZEWMANSQ-UHFFFAOYSA-N chloro(silyl)silane Chemical compound [SiH3][SiH2]Cl FXMNVBZEWMANSQ-UHFFFAOYSA-N 0.000 description 1
- 125000004803 chlorobenzyl group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012025 fluorinating agent Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- NFCGJSHYYNOKEM-UHFFFAOYSA-N iodo($l^{1}-silanyl)silicon Chemical compound [Si][Si]I NFCGJSHYYNOKEM-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 230000001035 methylating effect Effects 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000005244 neohexyl group Chemical group [H]C([H])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本出願は2014年6月16日に出願された米国仮出願番号第62/012,724号の優先権及び利益を主張し、その全体を参照することにより本明細書中に取り込む。
反応チャンバに基材を提供すること、
反応チャンバに気体試薬を導入すること、ここで、該気体試薬は下記式Iを有するアルキルアルコキシシラ環状化合物を構造形成性前駆体として含み、
反応チャンバ中の気体試薬にエネルギーを加え、気体試薬の反応を誘導して、基材上に予備膜を堆積させること、ここで、予備膜はポロゲンを含む、及び、
予備膜から実質的にすべてのポロゲンを除去し、細孔を有しそして2.7より低い誘電率を有する多孔性膜を提供すること、
を含む。特定の実施形態において、構造形成性前駆体は硬化剤をさらに含む。
例としては、シクロヘキサン、1,2,4−トリメチルシクロヘキサン、1−メチル−4−(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、メチルシクロヘキサンなどが挙げられる。
例としては、エチレン、プロピレン、アセチレン、ネオヘキサン、1,3−ブタジエン、2−メチル−1,3−ブタジエン、2,3−ジメチル−2,3−ブタジエン、置換ジエンなどが挙げられる。
例としては、パラ−シメン、シクロオクテン、1,5−シクロオクタジエン、ジメチルシクロオクタジエン、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、α-テルピネン、ピネン、リモネン、ビニルシクロヘキセンなどが挙げられる。
例としては、ノルボルナン、スピロ−ノナン、デカヒドロナフタレンなどが挙げられる。
例としては、カンフェン、ノルボルネン、ノルボルナジエン、5−エチリデン−2−ノルボルネンなどが挙げられる。
例としては、アダマンタンが挙げられる。
構造形成剤DEMS及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速960ミリグラム/分(mg/分)及び、240mg/分で、200標準立方センチメートル(sccm)のCO2キャリアガス流、10sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、275℃のウエハチャンク温度、600Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてシクロオクタンポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
構造形成剤DEMS及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速1120ミリグラム/分(mg/分)及び、280mg/分で、200標準立方センチメートル(sccm)のCO2キャリアガス流、20sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャンク温度、700Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてシクロオクタンポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
構造形成剤MESCAP及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速960mg/分及び、MESCAP240mgmで、200標準立方センチメートル(sccm)のCO2キャリアガス流、20sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャンク温度、600Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
構造形成剤MPSCAP及びポロゲン前駆体シクロオクタンの複合材層を200mm処理のための以下のプロセス条件を用いて堆積した。シクロオクタンの流速840mg/分及び、MPSCAP360mgmで、200標準立方センチメートル(sccm)のCO2キャリアガス流、20sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャンク温度、700Wプラズマが課された8トルチャンバ圧を用いて、前駆体を反応チャンバに直接液体注入(DLI)により輸送した。その後、得られた膜をUVアニールしてポロゲンを除去し、そして膜を機械的に向上させた。膜の種々の属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量%炭素(%C))を上記のように得た。表1に提供する。
特定の実験は300mmウエハ処理を用い、Applied Materials Producer(登録商標) SEで行った。上記の200mm処理と同様に、PECVDプロセスは、一般に、以下の基本工程: ガス流の初期設定及び安定化、シリコンウエハ基材上の膜の堆積、及び、基材取り出しの前のチャンバのパージ/排気を含んだ。300mm堆積を、TEOSフェースプレート(AMAT部品番号: 0040-95475)を含むProducer(登録商標)SE Twin 低kチャンバで行った。チャンバはAdvanced Energy APEX 3013 RF 発生器(ツインチャンバ毎に2つ)を備えている。Producerでのすべての堆積に関して、ヘリウムをキャリアガスとして用いた。Producer(登録商標) SE 低kチャンバからの堆積されたままの膜を、Producer(登録商標) SE NanoCure(商標)UV チャンバで、アルゴン下に、<10トルの1種以上の圧力及び≦400℃の1種以上の台座セット温度でUV−硬化させた。実験をp−型Siウエハ(抵抗率範囲=8〜12Ohm-cm)で行った。
本発明は、以下の態様を含んでいる。
(1)式Si v O w C x H y F z (式中、v+w+x+y+z=100%であり、vは10〜35原子%であり、wは10〜65原子%であり、xは5〜40原子%であり、yは10〜50原子%であり、そしてzは0〜15原子%である)により表される誘電体膜の製造方法であって、該方法は、
反応チャンバ内に基材を提供すること、
反応チャンバに気体試薬を導入すること、ここで、該気体試薬は、アルキルアルコキシシラ環状化合物を含む少なくとも1種の構造形成剤、及び、ポロゲンを含む、
反応チャンバ中の気体試薬にエネルギーを加え、気体試薬の反応を誘導して、基材上に予備膜を堆積させること、ここで、予備膜はポロゲンを含む、及び、
予備膜からポロゲンの少なくとも一部を除去し、細孔を含みそして約2.6以下の誘電率を有する多孔性誘電体膜を提供すること、
を含む、方法。
(2)前記構造形成性前駆体は硬化剤をさらに含む、(1)記載の方法。
(3)前記アルキルアルコキシシラ環状化合物は下記式I、
(4)前記アルキルアルコキシシラ環状化合物は1−メチル−1−メトキシ−1−シラシクロペンタン、1−メチル−1−エトキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−プロポキシ−1−シラシクロペンタン、1−メトキシ−1−シラシクロペンタン、1−エトキシ−1−シラシクロペンタン、1−メチル−1−メトキシ−1−シラシクロブタン、1−メチル−1−エトキシ−1−シラシクロブタン、1−メトキシ−1−シラシクロブタン、1−エトキシ−1−シラシクロブタン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロブタン、1−メチル−1−イソプロポキシ−1−シラシクロヘキサン、1−イソプロポキシ−1−シラシクロペンタン、1−イソプロポキシ−1−シラシクロブタン、1−イソプロポキシ−1−シラシクロヘキサン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、(3)記載の方法。
(5)前記アルキルアルコキシシラ環状化合物は1−メチル−1−エトキシ−1−シラシクロペンタンを含む、(4)記載の方法。
(6)前記アルキルアルコキシシラ環状化合物は1−メチル−1−イソプロポキシ−1−シラシクロペンタンを含む、(4)記載の方法。
(7)前記アルキルアルコキシシラ環状化合物は1−メチル−1−プロポキシ−1−シラシクロペンタンを含む、(4)記載の方法。
(8)前記ポロゲンはシクロオクタンである、(1)記載の化学蒸着方法。
(9)前記硬化剤はテトラエトキシシランを含む、(2)記載の方法。
(10)前記硬化剤はテトラメトキシシランを含む、(7)記載の方法。
(11)化学蒸着方法はプラズマ強化化学蒸着方法である、(1)記載の方法。
(12)反応混合物はO 2 , N 2 O, NO, NO 2 , CO 2 , 水、H 2 O 2 , オゾン及びそれらの組み合わせからなる群より選ばれる少なくとも1種の酸化剤を含む、(1)記載の方法。
(13)反応混合物は酸化剤を含まない、(1)記載の方法。
(14)前記反応チャンバは、エネルギーを加える工程において、He, Ar, N 2 , Kr, Xe, NH 3 , H 2 , CO 2 又はCOから選ばれる少なくとも1種のガスを含む、(1)記載の方法。
(15)除去する工程は熱処理、紫外線処理、電子線処理、γ線処理及びそれらの組み合わせを含む、(1)記載の方法。
(16)UV処理は熱処理の少なくとも一部の間に行われる、(13)記載の方法。
(17)ポロゲン前駆体は、
a)式C n H 2n の環式炭化水素(式中、n = 4〜14であり、該環式炭化水素は置換されていないか又は複数の直鎖又は枝分かれの炭化水素により置換されている)、
b)一般式C n H (2n+2)-2y の直鎖もしくは枝分かれの飽和、単一もしくは複数の不飽和の炭化水素(式中、n = 2〜20であり、y = 0〜nである)、
c)式C n H 2n-2x の単一もしくは複数の不飽和の環式炭化水素(式中、xは分子中の不飽和部位の数であり、n = 4〜14であり、環の水素は置換されていないか又は複数の直鎖もしくは枝分かれの炭化水素により置換されており、該環式炭化水素が不飽和であるならば、不飽和は環内にあるか、又は、環状構造への炭化水素置換基の1つにある)、
d)式C n H 2n-2 の二環式炭化水素(式中、n = 4〜14であり、該環式炭化水素は不飽和であるか又は複数の直鎖もしくは枝分かれの炭化水素により置換されている)、
e)式C n H 2n-(2+2x) の複数不飽和の二環式炭化水素(式中、xは分子中の不飽和部位の数であり、n = 4〜14であり、二環式構造中の炭素数は4〜12であり、該環式炭化水素は置換されていないか又は複数の直鎖もしくは枝分かれの炭化水素により置換されており、もし該炭化水素が不飽和であったならば、不飽和は環内にあるか、又は、環状構造への炭化水素置換基の1つにある)、及び、
f)式C n H 2n-4 の三環式炭化水素(式中、n = 4〜14であり、三環構造中の炭素数は4〜12であり、該環式炭化水素は置換されていないか又は複数の直鎖もしくは枝分かれの炭化水素により置換されている)、
からなる群より選ばれる、(1)記載の方法。
(18)(17)記載のポロゲン前駆体は、シクロヘキサン、1,2,4−トリメチルシクロヘキサン、1−メチル−4−(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、エチレン、プロピレン、アセチレン、ネオヘキサン、1,3−ブタジエン、2−メチル−1,3−ブタジエン、2,3−ジメチル−2,3−ブタジエン、置換ジエン、パラ−シメン、シクロオクテン、1,5−シクロオクタジエン、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、α-テルピネン、ピネン、リモネン、ビニルシクロヘキセン、ノルボルナン、スピロ−ノナン、カンフェン、ノルボルネン、ノルボルナジエン、5−エチリデン−2−ノルボルネン、デカヒドロナフタレン、アダマンタン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、(1)記載の方法。
(19)下記式I、
(20)前記アルキルアルコキシシラ環状化合物は1−メチル−1−メトキシ−1−シラシクロペンタン、1−メチル−1−エトキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−プロポキシ−1−シラシクロペンタン、1−メトキシ−1−シラシクロペンタン、1−エトキシ−1−シラシクロペンタン、1−メチル−1−メトキシ−1−シラシクロブタン、1−メチル−1−エトキシ−1−シラシクロブタン、1−メトキシ−1−シラシクロブタン、1−エトキシ−1−シラシクロブタン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロブタン、1−メチル−1−イソプロポキシ−1−シラシクロヘキサン、1−イソプロポキシ−1−シラシクロペンタン、1−イソプロポキシ−1−シラシクロブタン、1−イソプロポキシ−1−シラシクロヘキサン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、(19)記載の組成物。
(21)前記ハロゲン化物は塩化物イオンを含む、(20)記載の組成物。
Claims (20)
- 式SivOwCxHyFz(式中、v+w+x+y+z=100%であり、vは10〜35原子%であり、wは10〜65原子%であり、xは5〜40原子%であり、yは10〜50原子%であり、そしてzは0〜15原子%である)により表される誘電体膜の製造方法であって、該方法は、
反応チャンバ内に基材を提供すること、
反応チャンバに気体試薬を導入すること、ここで、該気体試薬は、アルキルアルコキシシラ環状化合物を含む少なくとも1種の構造形成性前駆体、及び、ポロゲンを含む、
反応チャンバ中の気体試薬にエネルギーを加え、気体試薬の反応を誘導して、基材上に予備膜を堆積させること、ここで、予備膜はポロゲンを含む、及び、
予備膜からポロゲンの少なくとも一部を除去し、細孔を含みそして約2.6以下の誘電率を有する多孔性誘電体膜を提供すること、
を含み、
前記アルキルアルコキシシラ環状化合物は下記式I、
方法。 - 前記構造形成性前駆体は硬化剤をさらに含む、請求項1記載の方法。
- 前記アルキルアルコキシシラ環状化合物は1−メチル−1−メトキシ−1−シラシクロペンタン、1−メチル−1−エトキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−プロポキシ−1−シラシクロペンタン、1−メトキシ−1−シラシクロペンタン、1−エトキシ−1−シラシクロペンタン、1−メチル−1−メトキシ−1−シラシクロブタン、1−メチル−1−エトキシ−1−シラシクロブタン、1−メトキシ−1−シラシクロブタン、1−エトキシ−1−シラシクロブタン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロブタン、1−メチル−1−イソプロポキシ−1−シラシクロヘキサン、1−イソプロポキシ−1−シラシクロペンタン、1−イソプロポキシ−1−シラシクロブタン、1−イソプロポキシ−1−シラシクロヘキサン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、請求項1記載の方法。
- 前記アルキルアルコキシシラ環状化合物は1−メチル−1−エトキシ−1−シラシクロペンタンを含む、請求項3記載の方法。
- 前記アルキルアルコキシシラ環状化合物は1−メチル−1−イソプロポキシ−1−シラシクロペンタンを含む、請求項3記載の方法。
- 前記アルキルアルコキシシラ環状化合物は1−メチル−1−プロポキシ−1−シラシクロペンタンを含む、請求項3記載の方法。
- 前記ポロゲンはシクロオクタンである、請求項1記載の方法。
- 前記硬化剤はテトラエトキシシランを含む、請求項2記載の方法。
- 前記硬化剤はテトラメトキシシランを含む、請求項6記載の方法。
- 前記方法はプラズマ強化化学蒸着方法である、請求項1記載の方法。
- 反応混合物はO2, N2O, NO, NO2, CO2, 水、H2O2, オゾン及びそれらの組み合わせからなる群より選ばれる少なくとも1種の酸化剤を含む、請求項1記載の方法。
- 反応混合物は酸化剤を含まない、請求項1記載の方法。
- 前記反応チャンバは、エネルギーを加える工程において、He, Ar, N2, Kr, Xe, NH3, H2, CO2又はCOから選ばれる少なくとも1種のガスを含む、請求項1記載の方法。
- 除去する工程は熱処理、UV処理、電子線処理、γ線処理及びそれらの組み合わせを含む、請求項1記載の方法。
- UV処理は熱処理の少なくとも一部の間に行われる、請求項14記載の方法。
- ポロゲン前駆体は、
a)式CnH2n の環式炭化水素(式中、n = 4〜14であり、該環式炭化水素は置換されていないか又は複数の直鎖又は枝分かれの炭化水素により置換されている)、
b)一般式CnH(2n+2)-2y の直鎖もしくは枝分かれの飽和、単一もしくは複数の不飽和の炭化水素(式中、n = 2〜20であり、y = 0〜nである)、
c)式CnH2n-2x の単一もしくは複数の不飽和の環式炭化水素(式中、xは分子中の不飽和部位の数であり、n = 4〜14であり、環の水素は置換されていないか又は複数の直鎖もしくは枝分かれの炭化水素により置換されており、該環式炭化水素が不飽和であるならば、不飽和は環内にあるか、又は、環状構造への炭化水素置換基の1つにある)、
d)式CnH2n-2 の二環式炭化水素(式中、n = 4〜14であり、該環式炭化水素は不飽和であるか又は複数の直鎖もしくは枝分かれの炭化水素により置換されている)、
e)式CnH2n-(2+2x) の複数不飽和の二環式炭化水素(式中、xは分子中の不飽和部位の数であり、n = 4〜14であり、二環式構造中の炭素数は4〜12であり、該環式炭化水素は置換されていないか又は複数の直鎖もしくは枝分かれの炭化水素により置換されており、もし該炭化水素が不飽和であったならば、不飽和は環内にあるか、又は、環状構造への炭化水素置換基の1つにある)、及び、
f)式CnH2n-4 の三環式炭化水素(式中、n = 4〜14であり、三環構造中の炭素数は4〜12であり、該環式炭化水素は置換されていないか又は複数の直鎖もしくは枝分かれの炭化水素により置換されている)、
からなる群より選ばれる、請求項1記載の方法。 - 請求項16記載のポロゲン前駆体は、シクロヘキサン、1,2,4−トリメチルシクロヘキサン、1−メチル−4−(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、エチレン、プロピレン、アセチレン、ネオヘキサン、1,3−ブタジエン、2−メチル−1,3−ブタジエン、2,3−ジメチル−2,3−ブタジエン、置換ジエン、パラ−シメン、シクロオクテン、1,5−シクロオクタジエン、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、α-テルピネン、ピネン、リモネン、ビニルシクロヘキセン、ノルボルナン、スピロ−ノナン、カンフェン、ノルボルネン、ノルボルナジエン、5−エチリデン−2−ノルボルネン、デカヒドロナフタレン、アダマンタン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、請求項1記載の方法。
- 下記式I、
少なくとも1種のポロゲン、
を含む、誘電体膜の蒸着のための組成物。 - 前記アルキルアルコキシシラ環状化合物は1−メチル−1−メトキシ−1−シラシクロペンタン、1−メチル−1−エトキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−プロポキシ−1−シラシクロペンタン、1−メトキシ−1−シラシクロペンタン、1−エトキシ−1−シラシクロペンタン、1−メチル−1−メトキシ−1−シラシクロブタン、1−メチル−1−エトキシ−1−シラシクロブタン、1−メトキシ−1−シラシクロブタン、1−エトキシ−1−シラシクロブタン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−メトキシ−1−シラシクロヘキサン、1−メチル−1−エトキシ−1−シラシクロヘキサン、1−メチル−1−イソプロポキシ−1−シラシクロペンタン、1−メチル−1−イソプロポキシ−1−シラシクロブタン、1−メチル−1−イソプロポキシ−1−シラシクロヘキサン、1−イソプロポキシ−1−シラシクロペンタン、1−イソプロポキシ−1−シラシクロブタン、1−イソプロポキシ−1−シラシクロヘキサン及びそれらの組み合わせからなる群より選ばれる少なくとも1種を含む、請求項18記載の組成物。
- 前記ハロゲン化物は塩化物イオンを含む、請求項19記載の組成物。
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