JP7110090B2 - 基板処理方法および基板処理システム - Google Patents
基板処理方法および基板処理システム Download PDFInfo
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- JP7110090B2 JP7110090B2 JP2018248246A JP2018248246A JP7110090B2 JP 7110090 B2 JP7110090 B2 JP 7110090B2 JP 2018248246 A JP2018248246 A JP 2018248246A JP 2018248246 A JP2018248246 A JP 2018248246A JP 7110090 B2 JP7110090 B2 JP 7110090B2
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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Description
図1は、本開示に係る基板処理方法の第1実施形態を示す工程図である。第1実施形態の基板処理方法は、基板上でモノマーを重合してポリマーの膜を形成する基板処理方法であって、基板と化学結合するモノマーを該基板上に供給する工程と、モノマーが供給された該基板上に、モノマーを重合させる重合開始剤を供給する工程とを含む。具体的には、図1に示すように、第1実施形態に係る基板処理方法は、工程S1、工程S2、工程S3、工程S4、および工程S5を含んでいる。
図6は、本開示に係る基板処理システムの実施形態を示す基板処理装置1の断面図である。本実施形態の基板処理装置1では、上述の基板処理方法が行われる。具体的には、本実施形態の基板処理装置1は、真空雰囲気が形成される処理容器11と、処理容器11内に設けられた、基板(ウエハW)を載置する載置部(載置台21)と、上記のモノマー(第1成分)を処理容器11内に供給する第1供給部(第1成分供給機構5A)と、上記の開始剤(第2成分)を処理容器11内に供給する第2供給部(第2成分供給機構5B)と、第1供給部でモノマーを供給した後に、第2供給部で開始剤を処理容器内に供給するように制御する制御部(コンピュータ10)を有する。なお、基板処理装置1は、本開示に係る基板処理システムを実現する装置の一例である。
図15に示す測定用の基板処理装置101を用いて、ポリマーの膜を形成する。具体的には、処理容器111内のウエハWの温度を所定の温度に調整し、成分E1(モノマーを含むガス)と成分E2(重合開始剤を含むガス)を図7に示すように交互に供給してウエハWにポリマーを成膜する。成膜は、図15に示すように、複数枚のウエハWに対して同時に行う。ウエハWには、直径300mmのシリコンウエハを用いる。ウエハWの表面には、SiH表面(Si表面を水素終端したもの)の領域、SiO2表面の領域、SiN表面の領域を設け、各領域に基板処理を行う。なお、成膜温度は、ウエハWの温度とし、成膜圧力は処理容器111内の圧力とする。また、成膜時のキャリアガス、および、パージガスはすべて窒素(N2)で行う。
光学式薄膜及びスキャトロメトリ(OCD)測定装置(装置名「n&k Analyser」、n&k Technology社製)を用いて、ウエハWに成膜した重合体の膜の膜厚を測定する。測定は、成膜したウエハWの面内49か所について行い、その平均膜厚を算出する。
成膜したポリマーの膜に対し、X線光電子分光(XPS)装置(AXIS-Ultra、Kratos社製)にて膜厚に対し深さ方向の元素組成、エネルギー分散型X線分析(EDX)装置(X-MAX、HORIB社製)にて残留微量金属を検出する。また、フーリエ変換赤外分光光度計(FT-IR)(FTS-575C、Nanometorics Japan社製)の測定によりモノマーおよびポリマーの主骨格である炭素結合のスペクトルのブロード化を検出し、重合の進行を判定する。なお、スペクトルがブロードである場合は重合が進行していると判断し、スペクトルがシャープである(ブレードでない)場合は重合が進行していないと判断する。
ポリマーの膜が、ウエハWの表面の材質(SiH、SiO2、SiN)によって、選択的に成膜されるか確認する。
成膜温度を150℃、成膜圧力を0.8Torrに調整し、第1成分(成分E1)に含まれるモノマーをチオフェン誘導体(EDOT誘導体)とし、第2成分(成分E2)に含まれる重合開始剤(酸化剤)を過酸化水素(HP)とする。図2に示すように、第1成分が先に供給され、第2成分が後に供給されるように、第1成分および第2成分を交互に供給して、ウエハWにポリマーの膜を形成(成膜)する。実施例1について、成膜された重合体の膜成膜速度を評価した。結果を表1に示す。
第2成分(成分E2)に含まれる重合開始剤(酸化剤)として過酸化水素(HP)の代わりに塩化モリブデン(MC)を用い、ウエハWの表面に、第2成分(成分E2)を先に供給(塗布)し、第1成分(成分E1)を後に供給した以外は、実施例1と同様に成膜し、評価した。結果を表1に示す。
1 基板処理装置
11 処理容器
21 載置台
31 排気口
41 ガスノズル
5A 第1成分供給機構
5B 第2成分供給機構
PB 被処理基板
W1 領域(第1領域)
W2 領域(第2領域)
PF ポリマーの膜(保護膜)
Claims (13)
- 基板上でモノマーを重合してポリマーの膜を形成する基板処理方法であって、
前記基板と化学結合する前記モノマーを前記基板上に供給する工程と、
前記モノマーが供給された前記基板上に、前記モノマーを重合させる開始剤を供給する工程とを含む、基板処理方法。 - 前記基板は、2つ以上の領域を有し、
前記2つ以上の領域のうち少なくとも1つの領域は、酸化シリコンよりも高い誘電率を有し、
前記モノマーは、前記1つの領域と化学結合する、請求項1に記載の基板処理方法。 - 前記モノマーを供給する工程の前に、前記1つの領域を水素終端する工程を含む、請求項2に記載の基板処理方法。
- 前記モノマーが、アルケニル基を有する、請求項1~3のいずれか1項に記載の基板処理方法。
- 前記アルケニル基が、ビニル基である、請求項4に記載の基板処理方法。
- 前記モノマーを供給する工程の後に、前記基板上の残留物を除去する工程を含む、請求項1~5のいずれか1項に記載の基板処理方法。
- 前記モノマーは、共役ヘテロ環化合物構造を有する、請求項1~6のいずれか1項に記載の基板処理方法。
- 前記共役ヘテロ環化合物構造が、非共有電子対を持つ構造である、請求項7に記載の基板処理方法。
- 前記共役ヘテロ環化合物構造を構成する共役ヘテロ環化合物が、チオール、アゾール、及びオキソールから選ばれる少なくとも1種である、請求項8に記載の基板処理方法。
- 前記開始剤が、ラジカル開始剤である、請求項1~9のいずれか1項に記載の基板処理方法。
- 前記ラジカル開始剤は、無機過酸化物、有機過酸化物、及びアゾ化合物から選ばれる少なくとも1種である、請求項10に記載の基板処理方法。
- 前記開始剤を供給する工程の後に、前記ポリマーの膜が形成された基板をエッチングする工程を含む、請求項1~11のいずれか1項に記載の基板処理方法。
- 請求項1~12のいずれか1項に記載の基板処理方法を行う基板処理システムであって、
真空雰囲気が形成される処理容器と、
前記処理容器内に設けられた、基板を載置する載置部と、
前記モノマーを前記処理容器内に供給する第1供給部と、
前記開始剤を前記処理容器内に供給する第2供給部と、
第1供給部で前記モノマーを供給した後に、第2供給部で前記開始剤を前記処理容器内に供給するように制御する制御部と、
を有する基板処理システム。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005514479A (ja) | 2001-12-31 | 2005-05-19 | ハネウエル・インターナシヨナル・インコーポレーテツド | 有機組成物 |
JP2011515537A (ja) | 2008-03-21 | 2011-05-19 | マイクロン テクノロジー, インク. | 等しい優先性で両ブロックを湿潤にするために、制約を受ける上部界面を有するブロック共重合体膜の熱アニーリング |
JP2013505354A (ja) | 2009-09-17 | 2013-02-14 | エシロール アンテルナショナル コムパニー ジェネラル ドプテイク | 基板上にポリマーフィルムを化学気相蒸着するための方法およびデバイス |
JP2014093331A (ja) | 2012-10-31 | 2014-05-19 | Tokyo Electron Ltd | 重合膜の成膜方法、成膜装置の環境維持方法、成膜装置、並びに電子製品の製造方法 |
JP2017201060A (ja) | 2016-05-08 | 2017-11-09 | 東京エレクトロン株式会社 | 重合化学蒸着を使用して平坦化層を堆積させる方法 |
US20180164245A1 (en) | 2016-12-09 | 2018-06-14 | Applied Materials, Inc. | Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition |
JP2018137435A (ja) | 2017-02-14 | 2018-08-30 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1053651A (ja) | 1996-08-08 | 1998-02-24 | Polymertech Kk | 高分子の製造方法 |
JP3913638B2 (ja) * | 2001-09-03 | 2007-05-09 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
JP4217870B2 (ja) * | 2002-07-15 | 2009-02-04 | 日本電気株式会社 | 有機シロキサン共重合体膜、その製造方法、成長装置、ならびに該共重合体膜を用いた半導体装置 |
SE0401739D0 (sv) * | 2004-07-01 | 2004-07-01 | Boerje Sellergren | Polymer films |
GB0713304D0 (en) | 2007-07-09 | 2007-08-22 | Imp Innovations Ltd | Highly conductive and stable transparent conducting polymer films |
US8097639B2 (en) * | 2008-08-29 | 2012-01-17 | Peking University | Light sensitive PDMS for complex pattern formation |
GB201108334D0 (en) * | 2011-05-18 | 2011-06-29 | Schlumberger Holdings | Separation of oil droplets from water |
JP5356569B2 (ja) * | 2012-04-05 | 2013-12-04 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理方法並びに基板処理装置 |
US20130337615A1 (en) * | 2012-05-25 | 2013-12-19 | Applied Materials, Inc. | Polymer hot-wire chemical vapor deposition in chip scale packaging |
JP5862459B2 (ja) * | 2012-05-28 | 2016-02-16 | 東京エレクトロン株式会社 | 成膜方法 |
US9922818B2 (en) * | 2014-06-16 | 2018-03-20 | Versum Materials Us, Llc | Alkyl-alkoxysilacyclic compounds |
JP6561754B2 (ja) * | 2014-10-31 | 2019-08-21 | Jsr株式会社 | 親液部と撥液部を有する基材の製造方法、組成物および導電膜の形成方法 |
US11039541B2 (en) * | 2014-11-16 | 2021-06-15 | Nano Dimension Technologies, Ltd. | Double-sided and multilayered printed circuit board fabrication using inkjet printing |
TWI662370B (zh) * | 2015-11-30 | 2019-06-11 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用之塗料組合物 |
US20170255096A1 (en) * | 2016-03-02 | 2017-09-07 | Jsr Corporation | Pattern-forming method |
TWI689988B (zh) * | 2016-07-21 | 2020-04-01 | 日商東京威力科創股份有限公司 | 半導體裝置之製造方法、真空處理裝置及基板處理裝置 |
WO2018179382A1 (ja) * | 2017-03-31 | 2018-10-04 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005514479A (ja) | 2001-12-31 | 2005-05-19 | ハネウエル・インターナシヨナル・インコーポレーテツド | 有機組成物 |
JP2011515537A (ja) | 2008-03-21 | 2011-05-19 | マイクロン テクノロジー, インク. | 等しい優先性で両ブロックを湿潤にするために、制約を受ける上部界面を有するブロック共重合体膜の熱アニーリング |
JP2013505354A (ja) | 2009-09-17 | 2013-02-14 | エシロール アンテルナショナル コムパニー ジェネラル ドプテイク | 基板上にポリマーフィルムを化学気相蒸着するための方法およびデバイス |
JP2014093331A (ja) | 2012-10-31 | 2014-05-19 | Tokyo Electron Ltd | 重合膜の成膜方法、成膜装置の環境維持方法、成膜装置、並びに電子製品の製造方法 |
JP2017201060A (ja) | 2016-05-08 | 2017-11-09 | 東京エレクトロン株式会社 | 重合化学蒸着を使用して平坦化層を堆積させる方法 |
US20180164245A1 (en) | 2016-12-09 | 2018-06-14 | Applied Materials, Inc. | Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition |
JP2018137435A (ja) | 2017-02-14 | 2018-08-30 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
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