JP6425753B2 - 金属接着およびバリア構造体を備える半導体デバイスならびに半導体デバイスを形成する方法 - Google Patents
金属接着およびバリア構造体を備える半導体デバイスならびに半導体デバイスを形成する方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 144
- 239000002184 metal Substances 0.000 title claims description 144
- 239000004065 semiconductor Substances 0.000 title claims description 126
- 230000004888 barrier function Effects 0.000 title claims description 92
- 238000000034 method Methods 0.000 title claims description 36
- 229910052721 tungsten Inorganic materials 0.000 claims description 78
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 77
- 239000010937 tungsten Substances 0.000 claims description 77
- 239000010936 titanium Substances 0.000 claims description 75
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 68
- 229910052719 titanium Inorganic materials 0.000 claims description 67
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 64
- 229910052757 nitrogen Inorganic materials 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 238000005121 nitriding Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000356 contaminant Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 229910016570 AlCu Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- -1 among others Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000007689 inspection Methods 0.000 description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical group F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000002365 hybrid physical--chemical vapour deposition Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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Description
105、205、305 金属構造体
106、206、306、506 半導体本体
107、207、307、507 金属接着およびバリア構造体
310 低pドープ半導体領域
311 npドープ半導体領域
313 絶縁層
520 第1の欠陥
521 第2の欠陥
522 第3の欠陥
1051、1071、1072、2051、2071〜2073 部分層
3070、3071 接着部分構造体
5071 第1の部分層
5072 第2の部分層
5073 第3の部分層
Claims (20)
- 半導体本体(106、206、306)に電気接続された金属構造体(105、205、305)と、
前記金属構造体(105、205、305)と前記半導体本体(106、206、306)との間の金属接着およびバリア構造体(107、207、307)であって、チタンおよびタングステンを含む層と、チタンおよびタングステンを含む前記層上のチタン、タングステン、および窒素を含む層と、チタン、タングステン、および窒素を含む前記層上のタングステン層とを備える、金属接着およびバリア構造体(107、207、307)と
を備える半導体デバイス(100、200、300)。 - チタンおよびタングステンを含む前記層が、30nm〜600nmの範囲内の厚さを有するTiW層である、請求項1に記載の半導体デバイス(100、200、300)。
- チタン、タングステン、および窒素を含む前記層の厚さが30nm〜600nmの範囲内にある、請求項1または2に記載の半導体デバイス(100、200、300)。
- 前記金属接着およびバリア構造体(107、207、307)が、前記タングステン層上のチタンおよびタングステンを含む層をさらに備える、請求項1から3のいずれか一項に記載の半導体デバイス(100、200、300)。
- 前記半導体本体と、チタンおよびタングステンを含む前記層との間の金属接着およびバリア部分構造体をさらに備え、前記金属接着およびバリア部分構造体が前記半導体本体と接触している、請求項1から4のいずれか一項に記載の半導体デバイス(100、200、300)。
- 前記金属接着およびバリア部分構造体が、TiW、TiN、Ti/TiN、TaN/Taの1つまたは組み合わせで作製されている、請求項5に記載の半導体デバイス(100、200、300)。
- 前記金属接着およびバリア部分構造体の厚さが30nm〜600nmの範囲内にある、請求項6に記載の半導体デバイス(100、200、300)。
- 半導体本体に電気接続された金属構造体と、
前記金属構造体と前記半導体本体との間の金属接着およびバリア構造体であって、AlおよびCuを含む層と、AlおよびCuを含む前記層上のTiを含む層と、Tiを含む前記層上のTiNを含む層とを備え、AlおよびCuを含む前記層が前記半導体本体(106、206、306)と接触している、金属接着およびバリア構造体と
を備える半導体デバイス(100、200、300)。 - AlおよびCuを含む前記層がSiをさらに含む、請求項8に記載の半導体デバイス(100、200、300)。
- TiNを含む前記層の厚さが5nm〜150nmの範囲内にある、請求項8に記載の半導体デバイス(100、200、300)。
- Tiを含む前記層の厚さが1nm〜150nmの範囲内にある、請求項8に記載の半導体デバイス(100、200、300)。
- 前記金属構造体(105、205、305)が、前記金属接着およびバリア構造体(107、207、307)と直接接触している銅層を備え、前記銅層の厚さが4μmよりも大きい、請求項1から11のいずれか一項に記載の半導体デバイス(100、200、300)。
- 前記銅層上の少なくとももう1つの金属層をさらに備える、請求項12に記載の半導体デバイス(100、200、300)。
- チタン、タングステン、および窒素を含む前記層内の窒素の原子百分率(at.%)が1%〜50%の範囲内にある、請求項1から7のいずれか一項に記載の半導体デバイス(100、200、300)。
- 半導体デバイスを製造する方法(400)であって、
半導体本体上に金属接着およびバリア構造体を形成すること(S400)と、
前記金属接着およびバリア構造体上に金属構造体を形成することと
を含み、前記金属接着およびバリア層の形成が、
チタンおよびタングステンを含む層を形成することと、チタンおよびタングステンを含む前記層上にチタン、タングステン、および窒素を含む層を形成すること(S410)と、チタン、タングステン、および窒素を含む前記層上にタングステン層をさらに形成することと
を含む、方法。 - チタン、タングステン、および窒素を含む前記層の形成が、
チタンおよびタングステンを含む層を形成することと、
チタンおよびタングステンを含む前記層を窒化することと
を含む、請求項15に記載の方法(400)。 - チタン、タングステン、および窒素を含む前記層がスパッタプロセスによって形成される、請求項15に記載の方法(400)。
- チタンおよびタングステンを含む前記層と、チタン、タングステン、および窒素を含む前記層との一方または両方の形成前の表面洗浄プロセスをさらに含む、請求項15から17のいずれか一項に記載の方法(400)。
- チタンおよびタングステンを含む前記層と、チタン、タングステン、および窒素を含む前記層との一方または両方が化学気相成長によって形成される、請求項15に記載の方法(400)。
- 前記金属接着およびバリア構造体の最上部および前記金属構造体の最下部が、真空状態の中断なく同じ処理チャンバ内で形成される、請求項15から19のいずれか一項に記載の方法(400)。
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DE102016104788.0A DE102016104788B4 (de) | 2016-03-15 | 2016-03-15 | Halbleitervorrichtung mit einer Metalladhäsions- und Barrierestruktur und Verfahren zum Herstellen einer Halbleitervorrichtung |
DE102016104788.0 | 2016-03-15 |
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