JP6410739B2 - 導電性の直接金属接合を行う方法 - Google Patents
導電性の直接金属接合を行う方法 Download PDFInfo
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- JP6410739B2 JP6410739B2 JP2015560748A JP2015560748A JP6410739B2 JP 6410739 B2 JP6410739 B2 JP 6410739B2 JP 2015560748 A JP2015560748 A JP 2015560748A JP 2015560748 A JP2015560748 A JP 2015560748A JP 6410739 B2 JP6410739 B2 JP 6410739B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 209
- 239000002184 metal Substances 0.000 title claims description 209
- 238000000034 method Methods 0.000 title claims description 58
- 239000000758 substrate Substances 0.000 claims description 68
- 239000011810 insulating material Substances 0.000 claims description 47
- 239000010949 copper Substances 0.000 claims description 41
- 229910044991 metal oxide Inorganic materials 0.000 claims description 25
- 150000004706 metal oxides Chemical class 0.000 claims description 25
- 230000001590 oxidative effect Effects 0.000 claims description 21
- 239000011800 void material Substances 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000007769 metal material Substances 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 16
- 238000007254 oxidation reaction Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005728 strengthening Methods 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 230000006835 compression Effects 0.000 description 16
- 238000007906 compression Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 6
- 239000005751 Copper oxide Substances 0.000 description 6
- 229910000431 copper oxide Inorganic materials 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000002040 relaxant effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910017214 AsGa Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/802—Applying energy for connecting
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- H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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Description
(a)1つの面が第1の金属層に覆われた第1の基板と、1つの面が第2の金属層に覆われた第2の基板とを準備する
(b)第1の金属層と第2の金属層とを直接接触させて、第1の金属層及び第2の金属層の間に金属材料の橋部を有する接合界面部を形成する。金属材料の橋部は、互いに流動的に接続された空隙によって分離される
(d)接合界面部を少なくとも部分的に酸化性流体に浸漬し、空隙の外縁となる部分の第1の金属層及び第2の金属層を酸化させて、当該酸化によって空隙を少なくとも部分的に満たす金属酸化物を生成し、当該金属酸化物により、第1の金属層及び第2の金属層における空隙の外縁となる部分間にコンタクト領域を形成する。
半導体材料からなる第1の基板と、
第1の金属層と、
第1の金属層に直接接合により接合されて導電性の接合界面部を構成する第2の金属層と、
半導体材料からなる第2の基板と
を備える構造を提案する。ここで、接合界面部は、
第1の金属層及び第2の金属層の間に位置し、金属材料からなり且つ空隙によって互いに分離された橋部と、
空隙の外縁となる部分の第1の金属層及び第2の金属層を酸化することにより形成され、空隙の少なくとも一部を充填し、且つ、空隙の外縁となる部分の第1の金属層及び第2の金属層を接続させる金属酸化物と
を備える。
Claims (18)
- 半導体材料からなる2つの基板(1、3)の間に導電性直接金属接合を行う方法であって、以下の各ステップ、つまり
(a)一面が第1の金属層(2)に覆われた第1の基板(1)と、一面が第2の金属層(4)に覆われた第2の基板(3)とを準備する
(b)前記第1の金属層(2)と前記第2の金属層(4)とを直接接触させて、前記第1の金属層(2)と前記第2の金属層(4)との間に、金属材料橋部(5)を有する接合界面部(6)を形成し、前記金属材料橋部(5)は、互いに流動的に接続された空隙によって分離されているようにする
(d)前記接合界面部(6)を少なくとも部分的に酸化性流体(8)に浸漬し、前記空隙の外縁となる部分の前記第1の金属層及び前記第2の金属層を酸化させて、当該酸化により前記空隙を少なくとも部分的に充填する金属酸化物を生成し、当該金属酸化物によって、前記第1の金属層(2)及び前記第2の金属層(4)における前記空隙の外縁となる部分の間にコンタクト領域(9)を形成する
を有する方法。 - 請求項1の方法において、
前記第1の基板(1)及び前記第2の基板(3)を準備する前記ステップ(a)の前に、CVD(化学的気相成長)法によって、前記第1の基板(1)の表面及び前記第2の基板(3)の表面に、それぞれ、第1の金属層(2)及び第2の金属層(4)を堆積するステップを備えることを特徴とする方法。 - 請求項1又は2の方法において、
前記浸漬のステップ(d)により、前記空隙内に前記酸化性流体(8)を浸透させて前記金属酸化物を成長させることを特徴とする方法。 - 請求項1から3のいずれか1つの方法において、
前記ステップ(b)と前記ステップ(d)との間に、熱履歴を適用して接合をアニールするステップ(c)を備えることを特徴とする方法。 - 請求項4の方法において、
前記ステップ(c)に基づく熱履歴の適用は、更に、前記接合界面部(6)の任意の側に圧力を加えるステップ(c1)を更に備えることを特徴とする方法。 - 請求項1から5のいずれか1つの方法において、
前記接触のステップ(b)の前に、前記第1の金属層(2)の表面及び前記第2の金属層(4)の表面を、RMSで0.7nm以下の粗さが得られるまで平坦化するステップを備えることを特徴とする方法。 - 請求項1から6のいずれか1つの方法において、
前記浸漬のステップ(d)において、前記酸化性流体(8)を、10℃と100℃との間の温度に加熱することを特徴とする方法。 - 請求項1から7のいずれか1つの方法において、
前記ステップ(d)の後に、接合を強化するための熱処理を行うステップ(e)を備えることを特徴とする方法。 - 請求項1から8のいずれか1つの方法において、
前記酸化性流体(8)は、液体の水(H2O)、過酸化水素(H2O2)又は気体のHNO 3 を含むことを特徴とする方法。 - 請求項1から9のいずれか1つの方法において、
前記第1の金属層(2)の金属、及び、前記第2の金属層(4)の金属は、銅、モリブデン、タングステン及びこれらの合金から選ばれていることを特徴とする方法。 - 請求項1から10のいずれか1つの方法において、
前記第1の金属層(2)の金属は、前記第2の金属層(4)の金属と同一であることを特徴とする方法。 - 請求項4から11のいずれか1つの方法において、
前記ステップ(c)による熱履歴の適用は、30℃と400℃との間の温度において行われることを特徴とする方法。 - 請求項1から12のいずれか1つの方法において、
前記第1の金属層(2)は前記第1の基板(1)の表面を完全に覆うと共に、前記第2の金属層(4)は前記第2の基板(3)の表面を完全に覆うことを特徴とする方法。 - 請求項1から12のいずれか1つの方法において、
前記第1の金属層(2)及び前記第2の金属層(4)は、それぞれ、間に第1の絶縁材料(13)が伸びた複数の第1の金属パッド(12)、及び、間に第2の絶縁材料(13’)が伸びた複数の第2の金属パッド(12’)を備え、前記第1の金属パッド(12)の高さ及び前記第2の金属パッド(12’)の高さは、前記第1の絶縁材料(13)の厚さ及び前記第2の絶縁材料(12’)の厚さ以下であることを特徴とする方法。 - 垂直の導電性を示す構造(100)であって、次の順の積層、つまり
半導体材料からなる第1の基板(1)と、
第1の金属層(2)と、
前記第1の金属層(2)に直接接合により接合されて導電性の接合界面部(6)を構成する第2の金属層(4)と、
半導体材料からなる第2の基板とを備え、
前記接合界面部(6)は、
前記第1の金属層(2)と前記第2の金属層(4)との間にあり、空隙によって分割された複数の金属材料橋部(5)と、
前記空隙の外縁となる部分の前記第1の金属層(2)及び前記第2の金属層(4)を酸化することにより生成され、前記空隙の少なくとも一部を充填し、前記空隙の外縁となる部分の前記第1の金属層(2)及び前記第2の金属層(4)の間にコンタクト領域(9)を形成する金属酸化物と、
を備えることを特徴とする構造。 - 請求項15の構造(100)において、
少なくとも50%の前記空隙は、前記金属酸化物によって充填され、40nm以下の寸法を有することを特徴とする構造。 - 請求項15又は16の構造(100)において、
前記第1の金属層(2)は前記第1の基板(1)の表面を完全に覆っており、且つ、前記第2の金属層(4)は前記第2の基板(3)の表面を完全に覆っていることを特徴とする構造。 - 請求項15又は16の構造(100)において、
前記構造(100)は、第1の絶縁材料(13)及び第2の絶縁材料(13’)を備え、
前記第1の金属層(2)及び前記第2の金属層(4)は、それぞれ、間に第1の絶縁材料(13)が伸びた複数の第1の金属パッド(12)、及び、間に第2の絶縁材料(13’)が伸びた複数の第2の金属パッド(12’)を備え、
前記第1の金属パッド(12)の高さ及び前記第2の金属パッド(12’)の高さは、それぞれ、前記第1の絶縁材料(13)の厚さ及び前記第2の絶縁材料(13’)の厚さ以下であることを特徴とする構造。
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