JP6401468B2 - パワーオーバーレイ構造およびその製造方法 - Google Patents
パワーオーバーレイ構造およびその製造方法 Download PDFInfo
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- JP6401468B2 JP6401468B2 JP2014048290A JP2014048290A JP6401468B2 JP 6401468 B2 JP6401468 B2 JP 6401468B2 JP 2014048290 A JP2014048290 A JP 2014048290A JP 2014048290 A JP2014048290 A JP 2014048290A JP 6401468 B2 JP6401468 B2 JP 6401468B2
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- semiconductor device
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- H01L23/495—Lead-frames or other flat leads
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- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
12 パワー半導体デバイス
14 誘電層
16 接着剤
18 金属配線
22 ヒートシンク
24 DBC基板
26 セラミック基板
28 上側シート
30 下側シート
32 はんだ
34 誘電性有機材料
36 POLサブモジュール
38 サーマルパッドまたはサーマルグリース
40 POL構造
42 POLサブモジュール
43 半導体デバイス
44 半導体デバイス
45 半導体デバイス
46 追加的な回路構成部品
48 誘電層
50 接着層
52 配線構造
54 金属配線
56 バイア
58 コンタクトパッド
60 導電性シム
62 導電性コンタクト層
64 誘電性フィラ材料
66 ヒートシンク
68 サーマルインターフェース層
70 入力−出力(I/O)接続
72 ボールグリッドアレイ(BGA)はんだバンプ
74 はんだマスク層
76 別の実施形態によるPOL構造
78 別の実施形態によるPOLサブモジュール
80 多層サーマルインターフェース
82 第1のサーマルインターフェース層
84 セラミック絶縁層
86 第2のサーマルインターフェース層
88 離散的パッド
90 横方向の空間
92 POLアセンブリ
94 外部回路構成部品
96 半導体デバイスの上面
98 誘電層の上面
100 半導体デバイスの底面
102 導電性シムの底面
104 誘電性フィラ材料の一部
106 導電性シムの上面
108 誘電性フィラ材料の上面
110 サーマルインターフェースの第1の側
112 サーマルインターフェース
113 半導体デバイスアセンブリ
114 リード
116 サーマルインターフェースの第2の側
118 POLサブモジュール
120 導電性シム
122 リードフレーム
124 POLサブモジュール
126 半導体デバイス
128 半導体デバイス
130 ステップ状の構成を有する導電性シム
132 導電性シムの第1の部分
134 第1の高さまたは厚さ
136 導電性シムの第2の部分
138 第2の高さまたは厚さ
140 導電性シムの平坦な上面
142 第1の導電性シム
144 第1の導電性コンタクト層
146 第1の導電性シムの上面
148 半導体デバイスの上面
150 第2の導電性コンタクト層
152 第2の導電性シム
Claims (18)
- 誘電層と、
前記誘電層に結合された第1の表面を有する半導体デバイスと、
前記誘電層に結合された第1の表面を有する導電性シムと、
前記半導体デバイスの第2の表面と前記導電性シムの第2の表面とに結合された第1の表面を有する導電性ヒートスプレッダと、
前記半導体デバイスの前記第1の表面と前記導電性シムの前記第1の表面とに結合されており、前記誘電層を通って延び、前記導電性シムと前記ヒートスプレッダとによって前記半導体デバイスの前記第2の表面に電気的に接続されているメタライゼーション層と
を備え、
前記半導体デバイスの前記第2の表面と前記導電性シムの前記第2の表面とが実質的に同一平面上にある、
半導体デバイスモジュール。 - 誘電層と、
前記誘電層に結合された第1の表面を有する半導体デバイスと、
前記誘電層に結合された第1の表面を有する導電性シムと、
前記半導体デバイスの第2の表面と前記導電性シムの第2の表面とに結合された第1の表面を有する導電性ヒートスプレッダと、
前記半導体デバイスの前記第1の表面と前記導電性シムの前記第1の表面とに結合されており、前記誘電層を通って延び、前記導電性シムと前記ヒートスプレッダとによって前記半導体デバイスの前記第2の表面に電気的に接続されているメタライゼーション層と、
前記ヒートスプレッダの第2の表面をコーティングするサーマルインターフェース層と、
を備え、
前記サーマルインターフェース層は電気絶縁性で熱伝導性の材料を含む、
半導体デバイスモジュール。 - 前記サーマルインターフェース層が、有機材料と樹脂の中に浮遊する複数の導電性粒子との少なくとも一方を含む、請求項2に記載の半導体デバイスパッケージ。
- 前記サーマルインターフェース層に結合されたヒートシンクを更に備えている、請求項2または3に記載の半導体デバイスパッケージ。
- 前記半導体デバイスがパワーデバイスを含む、請求項1乃至4のいずれかに記載の半導体デバイスパッケージ。
- 前記半導体デバイスと前記導電性シムとを前記ヒートスプレッダに結合する導電性コンタクト層を更に備えている、請求項1乃至5のいずれかに記載の半導体デバイスパッケージ。
- 前記ヒートスプレッダの第2の表面が対流熱伝達のために周囲の空気に曝されている、請求項1乃至6のいずれかに記載の半導体デバイスパッケージ。
- 前記半導体デバイスと前記導電性シムとを包囲するカプセル封じ手段を更に備えている、請求項1乃至7のいずれかに記載の半導体デバイスパッケージ。
- 半導体デバイスパッケージを形成する方法であって、
半導体デバイスを用意するステップと、
前記半導体デバイスの第1の表面を誘電層の第1の表面に付着させるステップと、
導電性シムの第1の表面を前記誘電層の前記第1の表面に付着させるステップと、
前記半導体デバイスの第2の表面と前記導電性シムの第2の表面との上に、前記半導体デバイスと前記導電性シムとを電気的に結合させるヒートスプレッダを配置するステップと、
前記誘電層の第2の表面上に、前記誘電層に形成されたバイアを通って延び前記半導体デバイスの前記第1の表面と前記導電性シムの前記第1の表面とを接触させる金属配線構造を、前記誘電層の第2の表面上に形成するステップと、
を含み、
前記半導体デバイスの前記第2の表面と前記導電性シムの前記第2の表面とが実質的に同一平面上にある、
方法。 - 半導体デバイスパッケージを形成する方法であって、
半導体デバイスを用意するステップと、
前記半導体デバイスの第1の表面を誘電層の第1の表面に付着させるステップと、
導電性シムの第1の表面を前記誘電層の前記第1の表面に付着させるステップと、
前記半導体デバイスの第2の表面と前記導電性シムの第2の表面との上に、前記半導体デバイスと前記導電性シムとを電気的に結合させるヒートスプレッダを配置するステップと、
前記誘電層の第2の表面上に、前記誘電層に形成されたバイアを通って延び前記半導体デバイスの前記第1の表面と前記導電性シムの前記第1の表面とを接触させる金属配線構造を、前記誘電層の第2の表面上に形成するステップと、
前記ヒートスプレッダの上面の上にサーマルインターフェース層を形成するステップと、
を含む方法。 - ヒートシンクを前記サーマルインターフェース層に結合するステップを更に含む、請求項10に記載の方法。
- 前記誘電層と前記サーマルインターフェース層との間を、誘電材料を用いてアンダーフィルするステップを更に含む、請求項10または11に記載の方法。
- 前記半導体デバイスと前記導電性シムと前記ヒートスプレッダの少なくとも一部とを、ポリマー材料を用いてカプセル封じするステップを更に含む、請求項9乃至12のいずれかに記載の方法。
- 絶縁基板と、
接着層を経由して前記絶縁基板に取り付けられたパワーデバイスと、
前記接着層を経由して前記絶縁基板に取り付けられた導電性シムと、
前記パワーデバイスの上面と前記導電性シムの上面とに結合された導電性で熱伝導性のスラブと、
前記絶縁基板を通って延び、前記パワーデバイスの第1および第2の表面上のコンタクト位置に電気的に結合されているメタライゼーション層と、
を備え、
前記パワーデバイスの前記上面と前記導電性シムの前記上面とが実質的に同一平面上にある、パワーオーバーレイ(POL)構造。 - 絶縁基板と、
接着層を経由して前記絶縁基板に取り付けられたパワーデバイスと、
前記接着層を経由して前記絶縁基板に取り付けられた導電性シムと、
前記パワーデバイスの上面と前記導電性シムの上面とに結合された導電性で熱伝導性のスラブと、
前記絶縁基板を通って延び、前記パワーデバイスの第1および第2の表面上のコンタクト位置に電気的に結合されているメタライゼーション層と、
前記スラブに結合された第1の側を有する電気絶縁層と、
を備えている、パワーオーバーレイ(POL)構造。 - 前記電気絶縁層が熱伝導性の有機材料を含む、請求項15に記載のPOL構造。
- 前記電気絶縁層の第2の側に結合されたヒートシンクを更に備えている、請求項16に記載のPOL構造。
- 前記電気絶縁層が多層基板を含み、前記多層基板は、
前記スラブに結合された第1の表面を有する第1の層と、
前記ヒートシンクに結合された第1の表面を有する第2の層と、
前記第1の層と前記第2の層との間に結合されたセラミック層と、
を含む、請求項17に記載のPOL構造。
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US10269688B2 (en) | 2019-04-23 |
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US10186477B2 (en) | 2019-01-22 |
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US20140264800A1 (en) | 2014-09-18 |
TWI679736B (zh) | 2019-12-11 |
CN104051376A (zh) | 2014-09-17 |
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