JP6389608B2 - Ti膜の成膜方法 - Google Patents
Ti膜の成膜方法 Download PDFInfo
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- JP6389608B2 JP6389608B2 JP2013267708A JP2013267708A JP6389608B2 JP 6389608 B2 JP6389608 B2 JP 6389608B2 JP 2013267708 A JP2013267708 A JP 2013267708A JP 2013267708 A JP2013267708 A JP 2013267708A JP 6389608 B2 JP6389608 B2 JP 6389608B2
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- 238000000034 method Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000011229 interlayer Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 3
- 229910004356 Ti Raw Inorganic materials 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 143
- 239000010408 film Substances 0.000 description 123
- 235000012431 wafers Nutrition 0.000 description 31
- 230000007246 mechanism Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000003795 desorption Methods 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 229910008486 TiSix Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
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Description
以下の説明において、ガスの流量の単位はmL/minを用いているが、ガスは温度および気圧により体積が大きく変化するため、本発明では標準状態に換算した値を用いている。なお、標準状態に換算した流量は通常sccm(Standerd Cubic Centimeter per Minutes)で表記されるためsccmを併記している。ここにおける標準状態は、温度0℃(273.15K)、気圧1atm(101325Pa)の状態である。
図1は本発明の一実施形態に係るTi膜の成膜方法を実施するための成膜装置の一例を示す概略断面図である。
次に、以上のような成膜装置100を用いて行われるTi膜の成膜方法について説明する。
高周波電力のパワー:100〜3000W
TiCl4ガス流量(成膜のための流量):1〜100mL/min(sccm)より好ましくは3.5〜20mL/min(sccm)
Arガス流量:100〜10000mL/min(sccm)
H2ガス流量:20〜5000mL/min(sccm)
チャンバ内圧力:13.3〜1333Pa(0.1〜10Torr)
成膜の際のウエハ温度:350〜450℃
なお、成膜時間は、得ようとする膜厚に応じて適宜設定される。Ti膜の膜厚は1〜10nm程度が好ましい。
温度:450℃
TiCl4流量:20mL/min(sccm)
Arガス流量:2000mL/min(sccm)
H2ガス流量:20mL/min(sccm)
チャンバ内圧力:200Pa(1.5Torr)
高周波電力のパワー:2500W
なお、本発明は、上記実施形態に限定されることなく種々変形可能である。例えば上記実施形態では、Ti原料ガスであるTiCl4ガスと還元ガスであるH2ガスとを同時に供給してプラズマCVDによりTi膜を成膜する例について示したが、TiCl4ガスとH2ガスとの供給を、ArガスやN2ガスのようなパージガスによるパージを挟んで交互に繰り返して、プラズマを生成した状態で原子層堆積法(ALD法)によりTi膜を成膜してもよい。また、本実施形態では、シャワーヘッドに高周波電力を印加することにより高周波電界を形成してプラズマを生成したが、サセプタに高周波電力を印加してもよく、また、プラズマ生成機構もこのような平行平板型のプラズマ形成機構に限るものではない。
2…サセプタ
5…ヒーター
10…シャワーヘッド
20…ガス供給機構
22…TiCl4ガス供給源
23…Arガス供給源
24…H2ガス供給源
41…高周波電源
42…電極
42a…伝送路
43…インピーダンス調整回路
53…排気装置
60…制御部
62…記憶部
62a…記憶媒体
100…成膜装置
110…Si基板
111…層間絶縁膜
112…コンタクトホール
113…Ti膜
114…TiSix膜
115…TiN膜
116…金属
W……半導体ウエハ
Claims (6)
- チャンバ内に基板を配置し、Ti原料であるTiCl4ガス、還元ガスであるH2ガスを含む処理ガスを導入しつつ前記チャンバ内にプラズマを生成して基板上にTi膜を成膜するTi膜の成膜方法であって、
前記基板は、Si部分と、その上に形成されたSiO 2 からなる層間絶縁膜とを有し、前記層間絶縁膜に、前記Si部分を臨むようにホールが形成されており、
成膜の際の温度を450℃以下とし、前記チャンバ内に、前記処理ガスの他にプラズマ生成ガスとしてArガスをH2ガスよりも多い流量で導入し、Arガスをプラズマ化してArイオンを生成し、Arイオンを基板上に堆積されたTi膜に作用させ、Ti膜からのClの脱離を促進させ、
前記Si部分に形成されるTi膜の膜厚のほうが、前記層間絶縁膜に形成されるTi膜の膜厚よりも厚くなるように成膜することを特徴とするTi膜の成膜方法。 - Ti膜成膜の際のガス流量が、
TiCl4ガス:1〜100mL/min(sccm)、
H2ガス:20〜5000mL/min(sccm)、
Arガス流量:100〜10000mL/min(sccm)
であることを特徴とする請求項1に記載のTi膜の成膜方法。 - 成膜処理の際の前記チャンバ内の圧力は、13.3〜1333Paの範囲であることを特徴とする請求項1または請求項2に記載のTi膜の成膜方法。
- 前記チャンバ内に設けられた載置台上に基板を載置し、載置台に設けられた電極に接続された伝送路に、インピーダンス調整回路を接続し、これによりプラズマから見た前記伝送路のインピーダンスを低下させてプラズマから基板に流れる電流を増加させ、Arイオンを高エネルギー化することを特徴とする請求項1から請求項3のいずれか1項に記載のTi膜の成膜方法。
- 前記載置台の前記電極を下部電極とし、前記下部電極に対向するように上部電極を設けて、前記上部電極に高周波電力を供給することにより、前記上部電極と前記下部電極との間に形成される高周波電界によりプラズマを生成することを特徴とする請求項4に記載のTi膜の成膜方法。
- 前記高周波電力のパワーが100〜3000Wであることを特徴とする請求項5に記載のTi膜の成膜方法。
Priority Applications (4)
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JP2013267708A JP6389608B2 (ja) | 2013-12-25 | 2013-12-25 | Ti膜の成膜方法 |
KR1020140180908A KR101759769B1 (ko) | 2013-12-25 | 2014-12-16 | Ti막의 성막 방법 |
US14/571,333 US9620370B2 (en) | 2013-12-25 | 2014-12-16 | Method of forming Ti film |
TW103144898A TWI726837B (zh) | 2013-12-25 | 2014-12-23 | Ti膜之成膜方法 |
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JP7018825B2 (ja) | 2018-06-05 | 2022-02-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP7080111B2 (ja) * | 2018-06-19 | 2022-06-03 | 東京エレクトロン株式会社 | 金属膜の形成方法及び成膜装置 |
CN114807893A (zh) * | 2021-01-19 | 2022-07-29 | 圆益Ips股份有限公司 | 薄膜形成方法 |
JP2023061727A (ja) | 2021-10-20 | 2023-05-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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JPH1131685A (ja) * | 1997-07-14 | 1999-02-02 | Hitachi Electron Eng Co Ltd | プラズマcvd装置およびそのクリーニング方法 |
JP3636866B2 (ja) * | 1997-07-16 | 2005-04-06 | 東京エレクトロン株式会社 | CVD−Ti膜の成膜方法 |
KR100502268B1 (ko) * | 2000-03-01 | 2005-07-22 | 가부시끼가이샤 히다치 세이사꾸쇼 | 플라즈마처리장치 및 방법 |
JP2010056567A (ja) * | 2002-10-17 | 2010-03-11 | Tokyo Electron Ltd | 成膜方法 |
JP4429695B2 (ja) * | 2002-12-05 | 2010-03-10 | 東京エレクトロン株式会社 | 成膜方法および成膜システム |
JP3574651B2 (ja) * | 2002-12-05 | 2004-10-06 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
KR20130106022A (ko) * | 2012-03-19 | 2013-09-27 | 주식회사 원익아이피에스 | 기판처리장치 및 그 동작 방법 |
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US20150179462A1 (en) | 2015-06-25 |
KR101759769B1 (ko) | 2017-07-19 |
JP2015124398A (ja) | 2015-07-06 |
KR20150075363A (ko) | 2015-07-03 |
TWI726837B (zh) | 2021-05-11 |
US9620370B2 (en) | 2017-04-11 |
TW201531580A (zh) | 2015-08-16 |
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