JP6381632B2 - 多層コーティングを備えた光学素子及び当該光学素子を備えた光学装置 - Google Patents
多層コーティングを備えた光学素子及び当該光学素子を備えた光学装置 Download PDFInfo
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- JP6381632B2 JP6381632B2 JP2016510985A JP2016510985A JP6381632B2 JP 6381632 B2 JP6381632 B2 JP 6381632B2 JP 2016510985 A JP2016510985 A JP 2016510985A JP 2016510985 A JP2016510985 A JP 2016510985A JP 6381632 B2 JP6381632 B2 JP 6381632B2
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- 238000000576 coating method Methods 0.000 title claims description 100
- 230000003287 optical effect Effects 0.000 title claims description 96
- 239000011248 coating agent Substances 0.000 title claims description 91
- 230000005855 radiation Effects 0.000 claims description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 229910052750 molybdenum Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 230000002427 irreversible effect Effects 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 191
- 230000000737 periodic effect Effects 0.000 description 28
- 239000000463 material Substances 0.000 description 25
- 230000008859 change Effects 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 13
- 238000002310 reflectometry Methods 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 238000011068 loading method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0875—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Filters (AREA)
Description
本願は、2013年4月29日付けで出願された独国特許出願第10 2013 207 751号の優先権を主張し、当該出願の全開示が本願の開示の一部であるとみなされ、参照により本願の開示に援用される。
Claims (14)
- 光学素子(50)であって、
基板(52)と、
該基板(52)に施された多層コーティング(51)と
を備え、該多層コーティング(51)は、少なくとも2つの層(53a〜53d)をそれぞれ有する同一構成のスタック(X1〜X4)の配置から構成された少なくとも1つの第1層系(53)と、少なくとも2つの層(54a、54b)をそれぞれ有する同一構成のスタック(Y1、Y2)の配置から構成された少なくとも1つの第2層系(54)とを備え、前記多層コーティング(51)の熱負荷時に、前記第1層系(53)は、前記スタック(X1〜X4)の厚さ(dx)の不可逆的な収縮を示し、前記第2層系(54)は、前記スタック(Y1、Y2)の厚さ(dY)の不可逆的な拡張を示し、
前記第1層系(53)の前記同一構成のスタック(X1〜X4)は、前記第2層系(54)の前記同一構成のスタック(Y1、Y2)と異なる光学素子。 - 請求項1に記載の光学素子において、前記少なくとも1つの第2層系(54)の前記スタック(Y1、Y2)の拡張は、前記多層コーティング(51)の前記少なくとも1つの第1層系(53)の前記スタック(X1〜X4)の収縮を補償する光学素子。
- 請求項1又は2に記載の光学素子において、前記第2層系(54)のスタック(Y1、Y2)の少なくとも1つの層(54b)がホウ素を含有する光学素子。
- 請求項3に記載の光学素子において、前記層(54b)はB4Cから形成される光学素子。
- 請求項4に記載の光学素子において、B4Cからなる前記層(54b)は、2nm以上の厚さ(d)を有する光学素子。
- 請求項1〜5のいずれか1項に記載の光学素子において、前記第2層系(54)のスタック(Y1、Y2)の少なくとも1つの層(54a)は、金属を含有するか又は金属から構成される光学素子。
- 請求項5に記載の光学素子において、前記金属はMo及びLaを含む群から選択される光学素子。
- 請求項1〜7のいずれか1項に記載の光学素子において、前記第2層系(54)のスタック(Y1、Y2)の前記層(54a、54c)は、ホウ素及び金属の両方を含有し、金属に対してホウ素が過剰である光学素子。
- 請求項1〜8のいずれか1項に記載の光学素子において、前記第1層系(53)のスタック(X1〜X4)の少なくとも1つの層(53a、53c)がMo又はSiから形成される光学素子。
- 請求項1〜9のいずれか1項に記載の光学素子において、前記第1層系(53)のスタック(X1〜X4)の少なくとも1つの層(53b、53d)がB4Cから形成される光学素子。
- 請求項1〜10のいずれか1項に記載の光学素子において、前記第1層系(53)のスタック(X1〜X4)の数対前記第2層系(54)のスタック(Y1、Y2)の数の比は4:2である光学素子。
- 請求項1〜11のいずれか1項に記載の光学素子において、前記多層コーティング(51)はEUV放射線(6)を反射するよう設計される光学素子。
- 光学装置、特にリソグラフィ装置(1)であって、請求項1〜12のいずれか1項に記載の少なくとも1つの光学素子(7、9、10、11、13、14、50)を備えた光学装置。
- 請求項13に記載の光学装置において、EUV放射線(6)の照射による前記光学素子(7、9、10、11、13、14、50)の熱負荷時に、該光学素子(7、9、10、11、13、14、50)で反射した前記EUV放射線(6)の重心波長(λZ)が一定である光学装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013207751.3 | 2013-04-29 | ||
DE201310207751 DE102013207751A1 (de) | 2013-04-29 | 2013-04-29 | Optisches Element mit einer Mehrlagen-Beschichtung und optische Anordnung damit |
PCT/EP2014/057637 WO2014177376A1 (en) | 2013-04-29 | 2014-04-15 | Optical element comprising a multilayer coating, and optical arrangement comprising same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016518624A JP2016518624A (ja) | 2016-06-23 |
JP6381632B2 true JP6381632B2 (ja) | 2018-08-29 |
Family
ID=50543038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016510985A Active JP6381632B2 (ja) | 2013-04-29 | 2014-04-15 | 多層コーティングを備えた光学素子及び当該光学素子を備えた光学装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160116648A1 (ja) |
JP (1) | JP6381632B2 (ja) |
KR (1) | KR102195200B1 (ja) |
CN (1) | CN105190372B (ja) |
DE (1) | DE102013207751A1 (ja) |
TW (1) | TWI607960B (ja) |
WO (1) | WO2014177376A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015203604B4 (de) * | 2015-02-27 | 2022-04-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Schichtaufbau für mehrschichtige Laue-Linsen bzw. zirkulare Multischicht-Zonenplatten |
US9766536B2 (en) | 2015-07-17 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask with multilayer structure and manufacturing method by using the same |
US10276662B2 (en) | 2016-05-31 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming contact trench |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0816720B2 (ja) * | 1992-04-21 | 1996-02-21 | 日本航空電子工業株式会社 | 軟x線多層膜反射鏡 |
DE10011547C2 (de) | 2000-02-28 | 2003-06-12 | Fraunhofer Ges Forschung | Thermisch stabiles Schichtsystem zur Reflexion von Strahlung im extremen ultravioletten Spektralbereich (EUV) |
US6396900B1 (en) * | 2001-05-01 | 2002-05-28 | The Regents Of The University Of California | Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application |
US6835671B2 (en) * | 2002-08-16 | 2004-12-28 | Freescale Semiconductor, Inc. | Method of making an integrated circuit using an EUV mask formed by atomic layer deposition |
DE102004002764A1 (de) | 2004-01-20 | 2004-06-09 | Carl Zeiss Smt Ag | Verfahren zur Herstellung von Multilayern und Multilayer |
JP2006258650A (ja) * | 2005-03-17 | 2006-09-28 | Nikon Corp | 多層膜反射鏡および露光装置 |
DE102006006283B4 (de) | 2006-02-10 | 2015-05-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich |
JP2008153395A (ja) * | 2006-12-15 | 2008-07-03 | Nikon Corp | 多層膜反射鏡、露光装置および半導体製造方法 |
TWI427334B (zh) * | 2007-02-05 | 2014-02-21 | Zeiss Carl Smt Gmbh | Euv蝕刻裝置反射光學元件 |
DE102008002403A1 (de) * | 2008-06-12 | 2009-12-17 | Carl Zeiss Smt Ag | Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung |
DE102008042212A1 (de) * | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
DE102009054653A1 (de) * | 2009-12-15 | 2011-06-16 | Carl Zeiss Smt Gmbh | Spiegel für den EUV-Wellenlängenbereich, Substrat für einen solchen Spiegel, Verwendung einer Quarzschicht für ein solches Substrat, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel oder einem solchen Substrat und Projetktionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
US9448492B2 (en) * | 2011-06-15 | 2016-09-20 | Asml Netherlands B.V. | Multilayer mirror, method of producing a multilayer mirror and lithographic apparatus |
-
2013
- 2013-04-29 DE DE201310207751 patent/DE102013207751A1/de not_active Ceased
-
2014
- 2014-04-15 JP JP2016510985A patent/JP6381632B2/ja active Active
- 2014-04-15 KR KR1020157030714A patent/KR102195200B1/ko active IP Right Grant
- 2014-04-15 WO PCT/EP2014/057637 patent/WO2014177376A1/en active Application Filing
- 2014-04-15 CN CN201480024171.6A patent/CN105190372B/zh active Active
- 2014-04-24 TW TW103114816A patent/TWI607960B/zh active
-
2015
- 2015-10-29 US US14/927,054 patent/US20160116648A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI607960B (zh) | 2017-12-11 |
CN105190372A (zh) | 2015-12-23 |
US20160116648A1 (en) | 2016-04-28 |
DE102013207751A1 (de) | 2014-10-30 |
CN105190372B (zh) | 2018-01-05 |
WO2014177376A1 (en) | 2014-11-06 |
TW201502061A (zh) | 2015-01-16 |
KR102195200B1 (ko) | 2020-12-28 |
JP2016518624A (ja) | 2016-06-23 |
KR20160002837A (ko) | 2016-01-08 |
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