JP6372640B2 - キャパシタ - Google Patents
キャパシタ Download PDFInfo
- Publication number
- JP6372640B2 JP6372640B2 JP2018526389A JP2018526389A JP6372640B2 JP 6372640 B2 JP6372640 B2 JP 6372640B2 JP 2018526389 A JP2018526389 A JP 2018526389A JP 2018526389 A JP2018526389 A JP 2018526389A JP 6372640 B2 JP6372640 B2 JP 6372640B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitor
- lower electrode
- film
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 title claims description 64
- 239000000758 substrate Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000010408 film Substances 0.000 description 91
- 230000001681 protective effect Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 239000007769 metal material Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 SiO 2 Chemical class 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G17/00—Structural combinations of capacitors or other devices covered by at least two different main groups of this subclass with other electric elements, not covered by this subclass, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Description
図1は、本発明の第1実施形態に係るキャパシタ10の構造を概略的に示す平面図である。また、図2は、図1のAA´断面を示す図である。なお、図1及び図2においては、キャパシタ10の構造における特徴の少なくとも一部を説明するのに必要な構成を抽出して記載しているが、キャパシタ10が不図示の構成を備えることを妨げるものではない。
次に、本発明の第2実施形態に係るキャパシタ10について説明する。第2実施形態以降では第1実施形態と共通の事柄についての記述を省略し、異なる点についてのみ説明する。特に、同様の構成による同様の作用効果については実施形態毎には逐次言及しない。また、第2実施形態において第1実施形態と同一の符号が付された構成は、第1実施形態における構成と同様の構成及び機能を有する。
次に、本発明の第3実施形態に係るキャパシタ10について説明する。
20 基板
22 絶縁膜
30 下部電極
32 下面
34 上面
36 端面
40 誘電膜
50 上部電極
60 保護膜
80 端子電極
90 バリア膜
92 下面
94 上面
96 端面
Claims (2)
- 基板と、
前記基板上に形成され、上面、下面、及び、当該上面と当該下面とをつなぐ端面を有する下部電極と、
前記下部電極上に形成された誘電膜と、
前記誘電膜上に形成された上部電極と、
前記上部電極に接続する端子電極と
を備え、
前記端子電極から前記下部電極を見た平面視において、前記下部電極の上面の少なくとも一部は前記下部電極の下面の周縁の内側の領域に形成されており、前記端面の前記少なくとも一部はテーパ形状を有し、
前記端子電極は、上面、下面、及び、当該上面と当該下面とをつなぐ端面を有しており、
前記端子電極の前記下面の少なくとも一部は、前記上面の周縁の内側の領域に形成されており、
前記端面の前記少なくとも一部はテーパ形状を有する、キャパシタ。 - 前記下部電極と前記誘電膜との間に形成されたバリア膜をさらに備えた、請求項1に記載のキャパシタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016135127 | 2016-07-07 | ||
JP2016135127 | 2016-07-07 | ||
PCT/JP2017/024455 WO2018008625A1 (ja) | 2016-07-07 | 2017-07-04 | キャパシタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6372640B2 true JP6372640B2 (ja) | 2018-08-15 |
JPWO2018008625A1 JPWO2018008625A1 (ja) | 2018-10-11 |
Family
ID=60912610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018526389A Active JP6372640B2 (ja) | 2016-07-07 | 2017-07-04 | キャパシタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20190074348A1 (ja) |
JP (1) | JP6372640B2 (ja) |
CN (1) | CN109196609A (ja) |
WO (1) | WO2018008625A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022006781A (ja) * | 2020-06-25 | 2022-01-13 | Tdk株式会社 | 電子部品及びその製造方法 |
KR102682841B1 (ko) * | 2020-06-29 | 2024-07-09 | 티디케이가부시기가이샤 | 박막 캐패시터 및 이것을 구비하는 전자 회로 기판 |
JPWO2022239717A1 (ja) * | 2021-05-10 | 2022-11-17 | ||
WO2023157426A1 (ja) * | 2022-02-16 | 2023-08-24 | Tdk株式会社 | 薄膜キャパシタ及びその製造方法、並びに、薄膜キャパシタを備える電子回路基板 |
WO2023157427A1 (ja) * | 2022-02-16 | 2023-08-24 | Tdk株式会社 | 薄膜キャパシタ及びこれを備える電子回路基板 |
WO2024143454A1 (ja) * | 2022-12-28 | 2024-07-04 | Tdk株式会社 | 薄膜キャパシタ及びその製造方法、並びに、薄膜キャパシタを備える電子回路基板 |
WO2024143455A1 (ja) * | 2022-12-28 | 2024-07-04 | Tdk株式会社 | 薄膜キャパシタ及びその製造方法、並びに、薄膜キャパシタを備える電子回路基板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101271890B (zh) * | 2005-02-14 | 2010-06-02 | 富士通株式会社 | 半导体器件及其制造方法与电容器结构及其制造方法 |
KR100878414B1 (ko) * | 2006-10-27 | 2009-01-13 | 삼성전기주식회사 | 캐패시터 내장형 인쇄회로기판 및 제조방법 |
JP2008153497A (ja) * | 2006-12-19 | 2008-07-03 | Murata Mfg Co Ltd | 誘電体薄膜キャパシタの製造方法 |
KR100815969B1 (ko) * | 2007-06-26 | 2008-03-24 | 주식회사 동부하이텍 | 엠아이엠(mim) 캐패시터와 그의 제조방법 |
JP5333435B2 (ja) * | 2008-03-04 | 2013-11-06 | 日本電気株式会社 | 貫通電極付きキャパシタおよびその製造方法、並びに半導体装置 |
JP6357856B2 (ja) * | 2014-05-12 | 2018-07-18 | Tdk株式会社 | 薄膜キャパシタ |
-
2017
- 2017-07-04 WO PCT/JP2017/024455 patent/WO2018008625A1/ja active Application Filing
- 2017-07-04 JP JP2018526389A patent/JP6372640B2/ja active Active
- 2017-07-04 CN CN201780028298.9A patent/CN109196609A/zh active Pending
-
2018
- 2018-11-05 US US16/180,577 patent/US20190074348A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JPWO2018008625A1 (ja) | 2018-10-11 |
CN109196609A (zh) | 2019-01-11 |
US20190074348A1 (en) | 2019-03-07 |
WO2018008625A1 (ja) | 2018-01-11 |
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