JP6371884B2 - 記録媒体 - Google Patents
記録媒体 Download PDFInfo
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- JP6371884B2 JP6371884B2 JP2017085770A JP2017085770A JP6371884B2 JP 6371884 B2 JP6371884 B2 JP 6371884B2 JP 2017085770 A JP2017085770 A JP 2017085770A JP 2017085770 A JP2017085770 A JP 2017085770A JP 6371884 B2 JP6371884 B2 JP 6371884B2
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- 239000000758 substrate Substances 0.000 claims description 113
- 238000000034 method Methods 0.000 claims description 72
- 230000008569 process Effects 0.000 claims description 69
- 150000002500 ions Chemical class 0.000 claims description 54
- 238000010884 ion-beam technique Methods 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 48
- 238000009826 distribution Methods 0.000 claims description 47
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 238000005498 polishing Methods 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 230000002265 prevention Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 chlorine ions Chemical class 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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Description
基板を処理する処理室と、
前記処理室と前記プラズマ発生室との間に設けられ、前記プラズマ発生室からイオンを引き出しイオンビームを形成するためのグリッドと、
前記プラズマ発生室に放電用ガスを導入するためのガス導入部と、
前記処理室内を排気するための排気手段と、
前記処理室内に設けられた基板を載置するための基板ホルダと、
前記基板の処理が行われる前の面内膜厚分布の測定結果が入力される制御装置と、
前記プラズマ発生室の外部であって、前記プラズマ発生室の前記グリッドと対向する天井部に設けられた電磁コイルと、を備え、
前記電磁コイルは、前記天井部の外周に設けられた外側コイルと、前記天井部の内周に設けられた内側コイルとを有し、
前記制御装置は、前記外側コイルの電流値と、前記内側コイルの電流値とを、独立して電流値が制御可能である外側コイル接続電源と内側コイル接続電源とを備えたイオンビームエッチング装置の前記制御装置を制御する制御プログラムが格納された記録媒体であって、
前記制御プログラムは、
前記基板を化学的機械研磨により研磨するCMP工程で生じた前記基板面内の膜厚分布を補正するために、前記イオンビームエッチング装置において、前記CMP工程後の前記基板に対してイオンビームエッチング処理を行うIBE工程の際に、
前記基板面内の中心部よりも外周部のエッチング量が小さくなるように、前記外側コイル接続電源から前記外側コイルに流す電流値と前記内側コイル接続電源から前記内側コイルに流す電流値の制御を実行することを特徴とする。
図1に本実施形態に係るイオンビームエッチング(IBE)装置の概略図を示す。IBE装置は、処理室101と、該処理室101内にイオンビームを照射するように設けられたイオンビーム発生装置100とを備える。イオンビーム発生装置100と処理室101とは連結されており、イオンビーム発生装置100から発生されたイオンビームは処理室101内に導入される。
第1の実施形態では、CMP工程後の基板面内の膜厚分布をプラズマ発生室102内のプラズマ密度を調整することで補正した。これに対して本実施形態では、グリッド109におけるイオン通過孔の開口密度をグリッドの面内で異ならせることで基板面内の膜厚分布の補正を行う。
上述した第2の参考実施形態では、グリッド109におけるイオン通過孔の開口密度をグリッドの面内で変化させることで基板111面内の膜厚分布の補正を行った。本実施形態も第2の参考実施形態と同様にグリッド109におけるイオン通過孔の開口密度をグリッド109の面内で異ならせるが、加えてグリッド109におけるイオン通過孔の開口密度を変化させる機構を備えることを要旨とする。
本発明の要旨はCMP工程後に存在する基板111面内の膜厚分布をIBE工程により補正することであるが、IBEは対象とする物質によってエッチングレートが異なる。上述したとおり、図3に示したFETの製造プロセスにおいては、CMP工程によりゲート絶縁膜210が露出するまで加工した後にIBE工程を行ってゲート絶縁膜210をエッチングするが、この時、SiO2からなるゲート絶縁膜210やSiNからなるCMPストッパ膜206といった構成材料がSi系化合物からなる膜は、TiNなどのTi系化合物からなる拡散防止膜211よりもエッチングレートが大きい。そのため、IBE工程後にトレンチ(図3(a)中の200)内の拡散防止膜211がゲート絶縁膜210やCMPストッパ膜206よりも突出する恐れがある。このような導電性の突起部は、その後に例えばSiNからなるキャップ膜を成膜し、高融点金属シリサイド膜へのコンタクトプラグを形成する際に、コンタクトプラグ形成ポイントの位置ズレが生じた際の隣接するコンタクトプラグとの接触等の問題を引き起こす可能性がある。
本実施形態について図10を用いて説明する。本実施形態では、図3に示したFETの製造プロセスにおいて、図10(a)に示すようにCMPストッパ膜206の下にハードマスク213が挿入されている。
本実施形態では、CMP工程後に基板面内の膜厚分布を測定し、その後のIBE工程における膜厚分布補正の強度を調整することを特徴とする。即ち、本実施形態は、第1の実施形態、第3の参考実施形態もしくは第4の実施形態において、CMP工程後にゲート絶縁膜210の膜厚分布の測定を行い、その測定結果に応じて、IBE工程を制御することを特徴とする。
Claims (2)
- プラズマ発生室と、
基板を処理する処理室と、
前記処理室と前記プラズマ発生室との間に設けられ、前記プラズマ発生室からイオンを引き出しイオンビームを形成するためのグリッドと、
前記プラズマ発生室に放電用ガスを導入するためのガス導入部と、
前記処理室内を排気するための排気手段と、
前記処理室内に設けられた基板を載置するための基板ホルダと、
前記基板の処理が行われる前の面内膜厚分布の測定結果が入力される制御装置と、
前記プラズマ発生室の外部であって、前記プラズマ発生室の前記グリッドと対向する天井部に設けられた電磁コイルと、を備え、
前記電磁コイルは、前記天井部の外周に設けられた外側コイルと、前記天井部の内周に設けられた内側コイルとを有し、
前記制御装置は、前記外側コイルの電流値と、前記内側コイルの電流値とを、独立して電流値が制御可能である外側コイル接続電源と内側コイル接続電源とを備えたイオンビームエッチング装置の前記制御装置を制御する制御プログラムが格納された記録媒体であって、
前記制御プログラムは、
前記基板を化学的機械研磨により研磨するCMP工程で生じた前記基板面内の膜厚分布を補正するために、前記イオンビームエッチング装置において、前記CMP工程後の前記基板に対してイオンビームエッチング処理を行うIBE工程の際に、
前記基板面内の中心部よりも外周部のエッチング量が小さくなるように、前記外側コイル接続電源から前記外側コイルに流す電流値と前記内側コイル接続電源から前記内側コイルに流す電流値の制御を実行することを特徴とする記録媒体。 - 前記内側コイルは前記プラズマ発生室の中心において、前記プラズマ発生室から前記基板に向かう方向と反対方向の磁場を形成し、前記外側コイルは前記プラズマ発生室から前記基板に向かう方向と同方向の磁場を形成することを特徴とする請求項1に記載の記録媒体。
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