JP6366858B2 - パワーモジュールの製造方法 - Google Patents
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Description
例えば、特許文献1(特開平9−129680号公報)には、接合部中央に十字状に溝を形成し、接合部を4分割することが開示されている。
本発明に係るパワーモジュールの一の製造方法では、絶縁基板上の導電性部材の接合領域に金属粒子ペーストを塗布する塗布工程がなされる。第1の主面及び第1の主面の反対側の第2の主面を有するパワー半導体素子を、第2の主面が塗布された金属粒子ペーストに接触するようにマウントするマウント工程がなされる。パワー半導体素子をその厚み方向に加圧しながら加熱することでパワー半導体素子と絶縁基板上の導電性部材を接合する加熱工程がなされる。加熱工程において、パワー半導体素子と絶縁基板上の導電性部材との接合領域の中央領域に形成される導電性接合部材は、接合領域の周辺領域に形成される導電性部材よりも密度が高い。塗布工程は、接合領域の中央領域における金属粒子ペーストの塗布量は、接合領域の周縁領域における金属粒子ペーストの塗布量よりも多い。
本発明に係るパワーモジュールの他の製造方法では、絶縁基板上の導電性部材の接合領域に金属粒子ペーストを塗布する塗布工程がなされる。第1の主面及び第1の主面の反対側の第2の主面を有するパワー半導体素子を、第2の主面が塗布された金属粒子ペーストに接触するようにマウントするマウント工程がなされる。パワー半導体素子をその厚み方向に加圧しながら加熱することでパワー半導体素子と絶縁基板上の導電性部材を接合する加熱工程がなされる。加熱工程において、パワー半導体素子と絶縁基板上の導電性部材との接合領域の中央領域に形成される導電性接合部材は、接合領域の周辺領域に形成される導電性部材よりも密度が高い。塗布工程は、接合領域の中央領域において塗布される金属粒子ペーストの厚みが、接合領域の周縁領域において塗布される金属粒子ペーストの厚みよりも大きい。
本発明に係るパワーモジュールのさらに他の製造方法では、絶縁基板上の導電性部材の接合領域に金属粒子ペーストを塗布する塗布工程がなされる。第1の主面及び第1の主面の反対側の第2の主面を有するパワー半導体素子を、第2の主面が塗布された金属粒子ペーストに接触するようにマウントするマウント工程がなされる。パワー半導体素子をその厚み方向に加圧しながら加熱することでパワー半導体素子と絶縁基板上の導電性部材を接合する加熱工程がなされる。加熱工程において、パワー半導体素子と絶縁基板上の導電性部材との接合領域の中央領域に形成される導電性接合部材は、接合領域の周辺領域に形成される導電性部材よりも密度が高い。塗布工程は、金属粒子ペーストを接合領域の中央領域において一様に塗布し、接合領域の周縁領域においてパターニングして塗布する。
以下、第1の実施形態について、図を参照して説明する。なお、各図中同一または相当部分には同一符号を付している。また、以下に記載する実施の形態の少なくとも一部を任意に組み合わせてもよい。
以下に、第1の実施形態に係るパワーモジュールの構造について説明する。図1は、第1の実施形態のパワーモジュールの断面図である。図1に示すとおり、第1の実施形態に係るパワーモジュールは、主として、パワー半導体素子1、絶縁基板2、第1の配線部材3、導電性接合部材4、第2の配線部材5、ベース板6、接合材料7、ケース8及び封止材料9を備える。
導電性接合部材4は、金属微粒子ペースト403(図2参照)を用いて形成された金属の焼結体である。導電性接合部材4を構成する金属としては、好ましくはAg及びCuである。
以下に、パワー半導体素子と絶縁基板の接合工程について説明する。
次に、第1の実施形態に係るパワーモジュールの効果について説明する。
以下、図を参照して第2の実施形態について説明する。ここでは、第1の実施形態と異なる点について主に説明する。
以下、図を参照して第3の実施形態について説明する。ここでは、第1の実施形態と異なる点について主に説明する。
以下、図を参照して第4の実施形態について説明する。ここでは、第1の実施形態と異なる点について主に説明する。
以下、図を参照して第5の実施形態について説明する。ここでは、第1の実施形態と異なる点について主に説明する。
以下、図を参照して第6の実施形態について説明する。ここでは、第1の実施形態と異なる点について主に説明する。
以下、図を参照して第7の実施形態について説明する。ここでは、第1の実施形態と異なる点について主に説明する。
Claims (6)
- 絶縁基板上の導電性部材の接合領域に金属粒子ペーストを塗布する塗布工程と、
第1の主面及び第1の主面の反対側の第2の主面を有するパワー半導体素子を、前記第2の主面が前記塗布された金属粒子ペーストに接触するようにマウントするマウント工程と、
前記パワー半導体素子を前記パワー半導体素子の厚み方向に加圧しながら加熱することで前記パワー半導体素子と前記絶縁基板上の導電性部材を接合する加熱工程とを備え、
前記加熱工程において、前記パワー半導体素子と前記絶縁基板上の導電性部材との接合領域の中央領域に形成される導電性接合部材は、前記接合領域の周辺領域に形成される前記導電性部材よりも密度が高く、
前記塗布工程は、前記接合領域の中央領域における前記金属粒子ペーストの塗布量は、前記接合領域の周縁領域における前記金属粒子ペーストの塗布量よりも多い、パワーモジュールの製造方法。 - 絶縁基板上の導電性部材の接合領域に金属粒子ペーストを塗布する塗布工程と、
第1の主面及び第1の主面の反対側の第2の主面を有するパワー半導体素子を、前記第2の主面が前記塗布された金属粒子ペーストに接触するようにマウントするマウント工程と、
前記パワー半導体素子を前記パワー半導体素子の厚み方向に加圧しながら加熱することで前記パワー半導体素子と前記絶縁基板上の導電性部材を接合する加熱工程とを備え、
前記加熱工程において、前記パワー半導体素子と前記絶縁基板上の導電性部材との接合領域の中央領域に形成される導電性接合部材は、前記接合領域の周辺領域に形成される前記導電性部材よりも密度が高く、
前記塗布工程は、前記接合領域の中央領域において塗布される前記金属粒子ペーストの厚みが、前記接合領域の周縁領域において塗布される前記金属粒子ペーストの厚みよりも大きい、パワーモジュールの製造方法。 - 絶縁基板上の導電性部材の接合領域に金属粒子ペーストを塗布する塗布工程と、
第1の主面及び第1の主面の反対側の第2の主面を有するパワー半導体素子を、前記第2の主面が前記塗布された金属粒子ペーストに接触するようにマウントするマウント工程と、
前記パワー半導体素子を前記パワー半導体素子の厚み方向に加圧しながら加熱することで前記パワー半導体素子と前記絶縁基板上の導電性部材を接合する加熱工程とを備え、
前記加熱工程において、前記パワー半導体素子と前記絶縁基板上の導電性部材との接合領域の中央領域に形成される導電性接合部材は、前記接合領域の周辺領域に形成される前記導電性部材よりも密度が高く、
前記塗布工程は、前記金属粒子ペーストを前記接合領域の中央領域において一様に塗布し、前記接合領域の周縁領域においてパターニングして塗布する、パワーモジュールの製造方法。 - 前記加熱工程において、前記パワー半導体素子の中央領域に付加される加圧力は、前記パワー半導体素子の周辺領域に付加される加圧力よりも大きい、請求項1〜3のいずれか1項に記載のパワーモジュールの製造方法。
- 前記加熱工程において、前記パワー半導体素子の中央領域のみが加圧される、請求項4記載のパワーモジュールの製造方法。
- 前記塗布工程は、第1の金属粒子ペーストを前記接合領域の中央領域に塗布し、第2の金属粒子ペーストを前記接合領域の周縁領域に塗布し、
前記第2の金属粒子ペースト中の金属粒子の平均粒径は、前記第1の金属粒子ペースト中の金属粒子の粒径の10倍以上である、請求項1〜4のいずれか1項に記載のパワーモジュールの製造方法。
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