JP6324654B2 - GaN薄膜構造物、その製造方法、及びそれを含む半導体素子 - Google Patents
GaN薄膜構造物、その製造方法、及びそれを含む半導体素子 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 104
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 34
- 239000010408 film Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 206010037660 Pyrexia Diseases 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 119
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 100
- 239000013078 crystal Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
101 基板
102a、102b 支持部材
103 第1バッファ層
104 電極層
105 第2バッファ層
106 GaN薄膜層
107 ストレイン補償層
108 GaNバッファ層
130 空気キャビティ
Claims (17)
- 基板上に部分的に配された少なくとも2つの支持部材と、
前記少なくとも2つの支持部材上にかけて配されたAlNからなる第1バッファ層と、
前記第1バッファ層上に配された電極層と、
前記電極層上に配された第2バッファ層と、
前記第2バッファ層上に配されたGaN薄膜層と、を含み、
前記少なくとも2つの支持部材は、前記基板と前記第1バッファ層の下面との間にて少なくとも一つの空気キャビティを形成し、
前記電極層は、電流を印加することにより、前記GaN薄膜層の成膜時に成膜温度を維持するように熱を発生させるマイクロヒータの役割を果たすように構成されるGaN薄膜構造物。 - 前記電極層は、Mo、Ti、Ru、CrNまたはTaNからなる請求項1に記載のGaN薄膜構造物。
- 前記第2バッファ層は、AlNからなる請求項1または2のうちいずれか1項に記載のGaN薄膜構造物。
- 前記第2バッファ層と前記GaN薄膜層との間に介されているストレイン補償層をさらに含む請求項1ないし3のうちいずれか1項に記載のGaN薄膜構造物。
- 前記ストレイン補償層と前記GaN薄膜層との間に介されているGaNバッファ層をさらに含む請求項4に記載のGaN薄膜構造物。
- 請求項1ないし5のうちいずれか1項に記載のGaN薄膜構造物を含む半導体素子。
- 基板上に部分的に配された少なくとも2つの支持部材と、
前記少なくとも2つの支持部材上にかけて配されたAlNからなる第1バッファ層と、
前記第1バッファ層上に配された下部電極層と、
前記下部電極層上に配された第2バッファ層と、
前記第2バッファ層上に配されたn−GaN層と、
前記n−GaN層上に配された活性層と、
前記活性層上に配されたp−GaN層と、
前記p−GaN層上に配されたp−電極層と、を含み、
前記少なくとも2つの支持部材は、前記基板と前記第1バッファ層の下面との間にて少なくとも一つの空気キャビティを形成し、
前記下部電極層は、電流を印加することにより、前記GaN薄膜層の成膜時に成膜温度を維持するように熱を発生させるマイクロヒータの役割を果たすように構成される半導体発光素子。 - 前記第2バッファ層、n−GaN層、活性層、p−GaN層及びp−電極層の一側が除去されて前記下部電極層の一部が露出されている請求項7に記載の半導体発光素子。
- 基板上に部分的に配された少なくとも2つの支持部材と、
前記少なくとも2つの支持部材上にかけて配されたAlNからなる第1バッファ層と、
前記第1バッファ層上に配された下部電極層と、
前記下部電極層上に配された第2バッファ層と、
前記第2バッファ層上に配されたGaN薄膜層と、
前記GaN薄膜層上に配された上部電極層と、を含み、
前記少なくとも2つの支持部材は、前記基板と前記第1バッファ層の下面との間にて少なくとも一つの空気キャビティを形成し、
前記下部電極層は、電流を印加することにより、前記GaN薄膜層の成膜時に成膜温度を維持するように熱を発生させるマイクロヒータの役割を果たすように構成される半導体圧電センサー。 - 基板上に犠牲層を形成する段階と、
前記犠牲層上にAlNからなる第1バッファ層を形成する段階と、
前記第1バッファ層上に電極層を形成する段階と、
前記電極層上に第2バッファ層を形成する段階と、
前記犠牲層を部分的にエッチングすることで、前記第1バッファ層を支持する少なくとも2つの支持部材を形成し、前記基板と前記第1バッファ層の下面との間にて少なくとも一つの空気キャビティを形成する段階と、
前記第2バッファ層上にGaN薄膜層を形成する段階と、を含み、
前記電極層は、電流を印加することにより、前記GaN薄膜層の成膜時に成膜温度を維持するように熱を発生させるマイクロヒータの役割を果たすように構成される半導体素子の製造方法。 - 前記電極層は、Mo、Ti、Ru、CrNまたはTaNからなる請求項10に記載の半導体素子の製造方法。
- 前記第2バッファ層は、AlNからなる請求項10または11のうちいずれか1項に記載の半導体素子の製造方法。
- 前記GaN薄膜層を形成する前に、前記第2バッファ層上にストレイン補償層をまず形成する段階をさらに含む請求項10ないし12のうちいずれか1項に記載の半導体素子の製造方法。
- 前記GaN薄膜層を形成する前に、前記ストレイン補償層上にGaNバッファ層をまず形成する段階をさらに含む請求項13に記載の半導体素子の製造方法。
- 前記第2バッファ層上に形成された前記GaN薄膜層はn−GaN薄膜層であり、
前記n−GaN薄膜層上に活性層を形成する段階と、
前記活性層上にp−GaN薄膜層を形成する段階と、
前記p−GaN薄膜層上にp−電極層を形成する段階と、をさらに含む請求項10ないし14のうちいずれか1項に記載の半導体素子の製造方法。 - 前記第2バッファ層、n−GaN薄膜層、活性層、p−GaN薄膜層及びp−電極層の一側を部分的にエッチングして、前記第2バッファ層下部の前記電極層を部分的に露出させる段階をさらに含む請求項15に記載の半導体素子の製造方法。
- 前記第2バッファ層下部の前記電極層を形成する段階は、前記電極層をパターニングする段階を含む請求項15に記載の半導体素子の製造方法。
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KR10-2011-0036374 | 2011-04-19 | ||
KR1020110036374A KR101761309B1 (ko) | 2011-04-19 | 2011-04-19 | GaN 박막 구조물, 그의 제조 방법, 및 그를 포함하는 반도체 소자 |
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TWI460885B (zh) * | 2011-12-09 | 2014-11-11 | Univ Nat Chiao Tung | 具有空氣介質層之半導體光電元件及空氣介質層之製作方法 |
KR101922118B1 (ko) | 2012-08-27 | 2018-11-26 | 삼성전자주식회사 | 플렉서블 반도체소자 및 그 제조방법 |
TWI520215B (zh) * | 2012-09-19 | 2016-02-01 | 友達光電股份有限公司 | 元件基板及其製造方法 |
WO2015019439A1 (ja) * | 2013-08-07 | 2015-02-12 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2015177069A (ja) | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置 |
KR102232265B1 (ko) * | 2014-07-14 | 2021-03-25 | 주식회사 헥사솔루션 | 기판 구조, 그 형성방법, 및 이를 이용한 질화물 반도체 제조방법 |
CN106334506B (zh) * | 2016-10-25 | 2019-08-02 | 新奥环保技术有限公司 | 一种超临界反应器和超临界处理*** |
TWI611604B (zh) * | 2017-01-03 | 2018-01-11 | 穩懋半導體股份有限公司 | 體聲波濾波器及調諧體聲波濾波器之體聲波共振器之方法 |
CN109273479B (zh) * | 2018-09-20 | 2021-07-23 | 上海天马微电子有限公司 | 一种显示面板及其制作方法 |
CN110504937B (zh) * | 2019-08-27 | 2023-09-26 | 南方科技大学 | 一种薄膜体声波谐振器结构及其制备方法 |
CN110957407B (zh) * | 2019-12-13 | 2021-04-09 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
CN110931608B (zh) * | 2019-12-13 | 2021-07-30 | 深圳第三代半导体研究院 | 衬底、led及其制造方法 |
WO2022259918A1 (ja) * | 2021-06-11 | 2022-12-15 | 株式会社ジャパンディスプレイ | 積層体及び積層体の製造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139361A (ja) | 1994-11-08 | 1996-05-31 | Toshiba Corp | 化合物半導体発光素子 |
JP3511443B2 (ja) | 1996-12-20 | 2004-03-29 | 株式会社リコー | 電池装置 |
JP3813740B2 (ja) | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
JP3436152B2 (ja) * | 1997-10-10 | 2003-08-11 | 豊田合成株式会社 | GaN系の半導体素子 |
JP4710139B2 (ja) * | 2001-01-15 | 2011-06-29 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子 |
JP2003309071A (ja) * | 2002-04-15 | 2003-10-31 | Mitsubishi Cable Ind Ltd | GaN系半導体結晶基材 |
JP4733904B2 (ja) | 2002-07-19 | 2011-07-27 | 学校法人立命館 | Ga窒化物半導体用基板及びその製造方法、Ga窒化物半導体及びその製造方法、並びに該Ga窒化物半導体を用いた発光ダイオード |
CN100362710C (zh) * | 2003-01-14 | 2008-01-16 | 松下电器产业株式会社 | 氮化物半导体元件及其制造方法和氮化物半导体基板的制造方法 |
JP4110222B2 (ja) * | 2003-08-20 | 2008-07-02 | 住友電気工業株式会社 | 発光ダイオード |
KR100744933B1 (ko) * | 2003-10-13 | 2007-08-01 | 삼성전기주식회사 | 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법 |
WO2005106977A1 (ja) * | 2004-04-27 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | 窒化物半導体素子およびその製造方法 |
JP2006032857A (ja) * | 2004-07-21 | 2006-02-02 | Koha Co Ltd | 発光素子 |
JP2006114548A (ja) | 2004-10-12 | 2006-04-27 | ▲さん▼圓光電股▲ふん▼有限公司 | 窒化ガリウム系ダイオード装置のバッファ層構造 |
WO2006093174A1 (ja) * | 2005-03-04 | 2006-09-08 | Sumitomo Electric Industries, Ltd. | 縦型窒化ガリウム半導体装置およびエピタキシャル基板 |
KR100976268B1 (ko) | 2005-04-04 | 2010-08-18 | 가부시키가이샤 토호쿠 테크노 아치 | GaN 단결정 성장방법, GaN 기판 제작방법, GaN계소자 제조방법 및 GaN계 소자 |
JP4432827B2 (ja) * | 2005-04-26 | 2010-03-17 | 住友電気工業株式会社 | Iii族窒化物半導体素子およびエピタキシャル基板 |
KR100638818B1 (ko) * | 2005-05-19 | 2006-10-27 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
US7226850B2 (en) | 2005-05-19 | 2007-06-05 | Raytheon Company | Gallium nitride high electron mobility transistor structure |
KR100755656B1 (ko) * | 2006-08-11 | 2007-09-04 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
US7754514B2 (en) * | 2006-08-22 | 2010-07-13 | Toyoda Gosei Co., Ltd. | Method of making a light emitting element |
JP2008230868A (ja) | 2007-03-16 | 2008-10-02 | Sumitomo Electric Ind Ltd | 窒化ガリウム結晶の成長方法および窒化ガリウム結晶基板 |
JP5192785B2 (ja) | 2007-11-21 | 2013-05-08 | 新日本無線株式会社 | 窒化物半導体装置の製造方法 |
EP2235752A4 (en) * | 2008-01-08 | 2013-12-04 | Moxtronics Inc | LIGHT-EMITTING HIGH PERFORMANCE DEVICES WITH HETEROSTRUCTURE AND METHOD |
JP2009302238A (ja) * | 2008-06-12 | 2009-12-24 | Canon Inc | 発光素子用半導体基板及び発光素子 |
KR101332794B1 (ko) * | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
JP5330040B2 (ja) * | 2009-03-17 | 2013-10-30 | 株式会社東芝 | 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法 |
US8207539B2 (en) * | 2009-06-09 | 2012-06-26 | Epistar Corporation | Light-emitting device having a thinned structure and the manufacturing method thereof |
KR101650840B1 (ko) * | 2009-08-26 | 2016-08-24 | 삼성전자주식회사 | 발광소자 및 이의 제조방법 |
KR20110056866A (ko) * | 2009-11-23 | 2011-05-31 | 삼성전자주식회사 | 질화물 발광소자 및 그 제조방법 |
US7781242B1 (en) * | 2009-12-10 | 2010-08-24 | Walsin Lihwa Corporation | Method of forming vertical structure light emitting diode with heat exhaustion structure |
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