CN110931608B - 衬底、led及其制造方法 - Google Patents
衬底、led及其制造方法 Download PDFInfo
- Publication number
- CN110931608B CN110931608B CN201911284942.6A CN201911284942A CN110931608B CN 110931608 B CN110931608 B CN 110931608B CN 201911284942 A CN201911284942 A CN 201911284942A CN 110931608 B CN110931608 B CN 110931608B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- main body
- sacrificial layer
- transfer sacrificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 152
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000012546 transfer Methods 0.000 claims abstract description 99
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 42
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 238000000926 separation method Methods 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 239000000725 suspension Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 224
- 230000008569 process Effects 0.000 description 30
- 230000003313 weakening effect Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000007480 spreading Effects 0.000 description 8
- 238000003892 spreading Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911284942.6A CN110931608B (zh) | 2019-12-13 | 2019-12-13 | 衬底、led及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911284942.6A CN110931608B (zh) | 2019-12-13 | 2019-12-13 | 衬底、led及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110931608A CN110931608A (zh) | 2020-03-27 |
CN110931608B true CN110931608B (zh) | 2021-07-30 |
Family
ID=69860530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911284942.6A Active CN110931608B (zh) | 2019-12-13 | 2019-12-13 | 衬底、led及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110931608B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112864287B (zh) * | 2021-01-11 | 2022-04-26 | 深圳市华星光电半导体显示技术有限公司 | 转移方法、微型器件阵列及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840972B (zh) * | 2009-03-19 | 2012-08-29 | 荣创能源科技股份有限公司 | 倒装芯片式半导体光电元件的结构及其制造方法 |
KR101640830B1 (ko) * | 2009-08-17 | 2016-07-22 | 삼성전자주식회사 | 기판 구조체 및 그 제조 방법 |
US20190272994A1 (en) * | 2009-10-14 | 2019-09-05 | Alta Devices, Inc. | High growth rate deposition for group iii/v materials |
KR101761309B1 (ko) * | 2011-04-19 | 2017-07-25 | 삼성전자주식회사 | GaN 박막 구조물, 그의 제조 방법, 및 그를 포함하는 반도체 소자 |
-
2019
- 2019-12-13 CN CN201911284942.6A patent/CN110931608B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN110931608A (zh) | 2020-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8722441B2 (en) | Manufacturing process for solid state lighting device on a conductive substrate | |
JP5624747B2 (ja) | 複数の発光セルを有する発光素子及びその製造方法 | |
US8772805B2 (en) | High efficiency light emitting diode and method for fabricating the same | |
JP5711874B2 (ja) | 発光ダイオードのチップレベルパッケージ | |
US8283676B2 (en) | Manufacturing process for solid state lighting device on a conductive substrate | |
WO2021115476A1 (zh) | 衬底、led及其制造方法 | |
TWI593145B (zh) | 發光二極體 | |
US20110175055A1 (en) | Solid state lighting device on a conductive substrate | |
WO2021115473A1 (zh) | 衬底及其制造方法、led及其制造方法 | |
JP2012114407A (ja) | 垂直型発光素子の製造方法およびその発光素子用の基板モジュール | |
WO2015141166A1 (ja) | 半導体発光装置とその製造方法 | |
CN110676355B (zh) | 发光元件的制作方法 | |
CN110931608B (zh) | 衬底、led及其制造方法 | |
CN102130254B (zh) | 发光装置及其制造方法 | |
WO2012045222A1 (zh) | 发光装置及其制造方法 | |
US8852974B2 (en) | Semiconductor light-emitting device and method for manufacturing the same | |
EP2487729A1 (en) | Led and manufacturing method thereof and luminescent device | |
KR20120001434A (ko) | 발광 다이오드 및 그것을 제조하는 방법 | |
CN106299073B (zh) | 发光二极管晶圆及其形成方法 | |
CN102420281B (zh) | 光电元件及其制造方法 | |
JP2019212834A (ja) | 発光素子及びその製造方法 | |
CN102544287A (zh) | 光电元件及其制造方法 | |
KR101890932B1 (ko) | 고효율 마이크로 led 구조체 | |
CN114038799A (zh) | 发光二极管及制作方法 | |
KR20150143176A (ko) | 발광 다이오드 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230404 Address after: No.1088 Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518055 Patentee after: Southern University of Science and Technology Address before: 518000 building 11, Jinxiu Dadi, 121 hudipai, Guanhu street, Longhua District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230627 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518000 Patentee after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No.1088 Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518055 Patentee before: Southern University of Science and Technology |
|
TR01 | Transfer of patent right |