JP6319849B2 - 単結晶材料の利用効率を改善した擬似基板 - Google Patents
単結晶材料の利用効率を改善した擬似基板 Download PDFInfo
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- JP6319849B2 JP6319849B2 JP2015529138A JP2015529138A JP6319849B2 JP 6319849 B2 JP6319849 B2 JP 6319849B2 JP 2015529138 A JP2015529138 A JP 2015529138A JP 2015529138 A JP2015529138 A JP 2015529138A JP 6319849 B2 JP6319849 B2 JP 6319849B2
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- 239000000758 substrate Substances 0.000 title claims description 140
- 239000013078 crystal Substances 0.000 title claims description 82
- 239000000463 material Substances 0.000 title claims description 57
- 238000000034 method Methods 0.000 claims description 65
- 238000005498 polishing Methods 0.000 claims description 31
- 238000005520 cutting process Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 230000003014 reinforcing effect Effects 0.000 claims description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 4
- 239000012779 reinforcing material Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 83
- 235000012431 wafers Nutrition 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 13
- 230000003746 surface roughness Effects 0.000 description 13
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- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 5
- 239000003351 stiffener Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
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- 238000000429 assembly Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (13)
- 単結晶インゴット(101)を準備するステップと、
ハンドル基板(102)を準備するステップと、
薄いスライス(105)を前記単結晶インゴット(101)から切り出すステップと、
前記薄いスライス(105)を前記ハンドル基板(102)に付着して擬似基板(109)を形成するステップと、を含む、擬似基板(109)を製作する方法において、
前記薄いスライス(505、605)を切り出すのに先立って、前記単結晶インゴット(501)上に補強材(509、608)を設け、それによって、前記補強材(509、608)及び前記薄いスライス(505、605)が機械的に安定な自立性構造(510、609)を形成するステップを更に含み、
前記薄いスライス(105)の厚さが、前記ハンドル基板(102)に付着される直前において300μmにほぼ等しいか、又はそれよりも薄いことを特徴とする、方法。 - 前記補強材(509)がポリマー又は高融点金属である、請求項1に記載の方法。
- 前記薄いスライス(105、505)を付着する前記ステップが、セラミック系複合接着剤又はグラファイト系接着剤を用いて実施される、請求項1又は2に記載の方法。
- 前記擬似基板(511)を形成した後に、前記補強材(509)を除去するステップを更に含む、請求項1〜3のいずれか一項に記載の方法。
- 前記補強材(608)が酸化物層である、請求項1に記載の方法。
- 前記ハンドル基板(602)に対する前記薄いスライス(605)の付着が分子結合によって達成される、請求項5に記載の方法。
- 前記擬似基板(109)を研磨又は両面研磨するステップを更に含む、請求項1〜6のいずれか一項に記載の方法。
- 前記擬似基板(109)の縁部を面取りするステップを更に含む、請求項1〜7のいずれか一項に記載の方法。
- 前記擬似基板(109)に平坦部又は切欠きを切り込むステップを更に含む、請求項1〜8のいずれか一項に記載の方法。
- 前記薄いスライス(105)の厚さが、2インチの直径に対して300μmにほぼ等しいか、又はそれよりも薄い、請求項1〜9のいずれか一項に記載の方法。
- 前記単結晶が、シリコン系材料、ゲルマニウム系材料、II−VI族若しくはIII−V族半導体材料、又はSiC、又はGaN、又はAl、又はZnO、又はサファイア、又は圧電材料、又はLiNbO3、又はLiTaO3の1つであるか、或いはそれを含む、請求項1〜10のいずれか一項に記載の方法。
- 前記擬似基板の中又は上に半導体素子を製作するステップを含む、請求項1〜11のいずれか一項に記載の方法。
- 前記半導体素子を製作した後に前記ハンドル基板(102)を除去するステップを更に含む、請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1258227 | 2012-09-04 | ||
FR1258227A FR2995136B1 (fr) | 2012-09-04 | 2012-09-04 | Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin |
PCT/IB2013/001940 WO2014037793A1 (en) | 2012-09-04 | 2013-09-06 | Pseudo substrate with improved efficiency of usage of single crystal material |
Publications (2)
Publication Number | Publication Date |
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JP2015529978A JP2015529978A (ja) | 2015-10-08 |
JP6319849B2 true JP6319849B2 (ja) | 2018-05-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015529138A Active JP6319849B2 (ja) | 2012-09-04 | 2013-09-06 | 単結晶材料の利用効率を改善した擬似基板 |
Country Status (8)
Country | Link |
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US (2) | US10910256B2 (ja) |
JP (1) | JP6319849B2 (ja) |
KR (1) | KR102047864B1 (ja) |
CN (1) | CN104718599B (ja) |
DE (1) | DE112013004330T5 (ja) |
FR (1) | FR2995136B1 (ja) |
TW (1) | TWI610373B (ja) |
WO (1) | WO2014037793A1 (ja) |
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JP6312563B2 (ja) * | 2014-09-04 | 2018-04-18 | 株式会社ディスコ | 保護部材の剥離方法及び剥離装置 |
CN104979185B (zh) * | 2015-05-13 | 2018-01-30 | 北京通美晶体技术有限公司 | 一种超薄半导体晶片及其制备方法 |
CN105081893B (zh) * | 2015-05-13 | 2018-11-06 | 北京通美晶体技术有限公司 | 一种超薄Ge单晶衬底材料及其制备方法 |
DE102015112648B4 (de) * | 2015-07-31 | 2021-02-04 | Infineon Technologies Ag | Verfahren zum bilden einer waferstruktur, verfahren zum bilden eines halbleiterbauelements und einer waferstruktur |
US9536838B1 (en) * | 2015-08-10 | 2017-01-03 | Infineon Technologies Ag | Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers |
FR3045678B1 (fr) | 2015-12-22 | 2017-12-22 | Soitec Silicon On Insulator | Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche |
FR3045677B1 (fr) | 2015-12-22 | 2019-07-19 | Soitec | Procede de fabrication d'une couche monocristalline, notamment piezoelectrique |
FR3054930B1 (fr) * | 2016-08-02 | 2018-07-13 | Soitec | Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur |
FR3076067B1 (fr) * | 2017-12-21 | 2020-01-10 | Universite De Franche-Comte | Procede de fabrication de composite a couche mince ultra-plane |
JP7308652B2 (ja) * | 2019-04-26 | 2023-07-14 | 株式会社ディスコ | デバイスチップの製造方法 |
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US10910256B2 (en) | 2021-02-02 |
FR2995136B1 (fr) | 2015-06-26 |
DE112013004330T5 (de) | 2015-06-11 |
TWI610373B (zh) | 2018-01-01 |
CN104718599A (zh) | 2015-06-17 |
TW201411741A (zh) | 2014-03-16 |
KR20160041840A (ko) | 2016-04-18 |
US20150243549A1 (en) | 2015-08-27 |
FR2995136A1 (fr) | 2014-03-07 |
KR102047864B1 (ko) | 2019-11-22 |
CN104718599B (zh) | 2018-01-16 |
WO2014037793A1 (en) | 2014-03-13 |
US20210050248A1 (en) | 2021-02-18 |
JP2015529978A (ja) | 2015-10-08 |
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