JP7416556B2 - 電力およびrf用途用の設計された基板構造 - Google Patents
電力およびrf用途用の設計された基板構造 Download PDFInfo
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- JP7416556B2 JP7416556B2 JP2021210164A JP2021210164A JP7416556B2 JP 7416556 B2 JP7416556 B2 JP 7416556B2 JP 2021210164 A JP2021210164 A JP 2021210164A JP 2021210164 A JP2021210164 A JP 2021210164A JP 7416556 B2 JP7416556 B2 JP 7416556B2
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- single crystal
- silicon
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- 239000010410 layer Substances 0.000 claims description 406
- 239000000758 substrate Substances 0.000 claims description 103
- 239000012790 adhesive layer Substances 0.000 claims description 74
- 230000004888 barrier function Effects 0.000 claims description 44
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- 239000000463 material Substances 0.000 claims description 41
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 24
- 239000000919 ceramic Substances 0.000 claims description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 229910002601 GaN Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052796 boron Inorganic materials 0.000 description 7
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 7
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
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- 229910052594 sapphire Inorganic materials 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
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- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
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- 229910020781 SixOy Inorganic materials 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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Description
[0001]本出願は、2016年6月14日に出願された「ENGINEERED SUBSTRATE STRUCTURE FOR POWER AND RF APPLICATIONS」という名称の米国仮特許出願第62/350,084号明細書、および2016年6月14日に出願された「ENGINEERED SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURE」という名称の米国仮特許出願第62/350,077号明細書に基づく優先権を主張し、その開示内容は、全ての目的のためにその全体が参照により本明細書に組み込まれる。
ン層に結合された実質的単結晶シリコン層、および実質的単結晶シリコン層に結合されたエピタキシャルIII-V層とを含む。
である。導電層がポリシリコンである実施形態では、ポリシリコン層の厚さは、500~5,000Å程度、例えば2,500Åであり得る。幾つかの実施形態では、ポリシリコン層は、第1の接着層112(例えば、TEOS層)を完全に囲むようにシェルとして形成することができ、それにより完全に封入された第1の接着層を形成し、またLPCVDプロセスを使用して形成できる。他の実施形態では、後述するように、導電性材料は、接着層の一部、例えば基板構造の下半分に形成することができる。幾つかの実施形態では、導電性材料を完全封入層として形成し、続いて基板構造の片側で除去することができる。
構造はバリア層118を含まなかった。図2Aを参照すると、セラミックコア中に存在する幾つかの種(例えば、イットリウム、カルシウム、およびアルミニウム)は、設計された層120/122中で無視できる濃度まで低下する。カルシウム、イットリウム、およびアルミニウムの濃度は、それぞれ3、4、および6桁下がる。
ホウ素によるドーピングは約1×1019cm-3から1×1020cm-3の範囲のレベルである。導電層の存在は、設計された基板を半導体処理ツール、例えば静電チャック(ESC)を有するツールに静電チャックする際に有用である。導電層314は、処理後の迅速なデチャックを可能にする。したがって、本発明の実施形態は、従来のシリコンウエハと共に利用される方法で処理できる基板構造を提供する。当業者であれば、多くの変形、修正、および代替案を認識するであろう。
層)を接合層に接合することは、層がシリコンウエハから転写される単結晶シリコン層である層転写プロセスを利用する。
きる。
板構造はその後除去される。しかしながら、RFおよびパワー装置用途の場合、設計された基板構造は完成した装置の一部を形成し、その結果、設計された基板構造または設計された基板構造の要素の電気的、熱的、および他の特性は、特定の用途に対して重要である。
Claims (18)
- 支持構造であって、
多結晶セラミックコアと、
前記多結晶セラミックコアに結合された第1の接着層と、
前記第1の接着層に結合された導電層と、
前記導電層に結合された第2の接着層と、
前記第2の接着層に結合されたバリア層と
を含む、支持構造と、
前記支持構造に結合された接合層と、
前記接合層に結合された実質的単結晶酸化ガリウム層と
を含む設計された基板構造。 - 前記多結晶セラミックコアが窒化アルミニウムを含む、請求項1に記載の設計された基板構造。
- 前記第1の接着層は、前記多結晶セラミックコアを封入する第1のテトラエチルオルト
シリケート(TEOS)層を含み、
前記導電層は、前記第1のTEOS層を封入するポリシリコン層を含み、
前記第2の接着層は、前記ポリシリコン層を封入する第2のTEOS層を含み、
前記バリア層は、前記第2のTEOS層を封入する窒化シリコン層を含み、
前記接合層が酸化シリコンを含む、請求項2に記載の設計された基板構造。 - 前記実質的単結晶酸化ガリウム層に結合されたエピタキシャル材料をさらに含む、請求項1に記載の設計された基板構造。
- エピタキシャル材料が、前記実質的単結晶酸化ガリウム層上に成長した、請求項4に記載の設計された基板構造。
- 前記実質的単結晶酸化ガリウム層に結合されたエピタキシャル層をさらに含む、請求項5に記載の設計された基板構造。
- 前記エピタキシャル層は、エピタキシャルIII-V層を含む、請求項6に記載の設計された基板構造。
- 前記エピタキシャルIII-V層は、エピタキシャル窒化ガリウム層および/またはエピタキシャル窒化アルミニウムガリウム層を含む、請求項7に記載の設計された基板構造。
- 前記エピタキシャル層から前記エピタキシャル材料へと通過する複数のビアをさらに含む、請求項6に記載の設計された基板構造。
- 前記実質的単結晶酸化ガリウム層と前記エピタキシャル層との間に配置された1つ以上のバッファ層をさらに含む、請求項6に記載の設計された基板構造。
- 支持構造であって、
多結晶セラミックコアと、
前記多結晶セラミックコアに結合された第1の接着層と、
前記第1の接着層に結合された導電層と、
前記導電層に結合された第2の接着層と、
前記第2の接着層に結合されたバリア層と
を含む、支持構造と、
前記支持構造に結合された接合層と、
前記接合層に結合された実質的単結晶酸化ガリウム層と、
前記実質的単結晶酸化ガリウム層に結合されたエピタキシャル層と
を含む基板。 - 前記多結晶セラミックコアが窒化アルミニウムを含む、請求項11に記載の基板。
- 前記接合層が酸化シリコンを含む、請求項12に記載の基板。
- 前記エピタキシャル層は、エピタキシャルIII-V層を含む、請求項11に記載の基板。
- 前記エピタキシャルIII-V層は、エピタキシャル窒化ガリウム層を含む、請求項14に記載の基板。
- 前記エピタキシャル層が約5μm以上の厚さを有する、請求項11に記載の基板。
- 前記実質的単結晶酸化ガリウム層と前記エピタキシャル層との間に配置されたエピタキシャル材料をさらに含む、請求項11に記載の基板。
- 前記多結晶セラミックコアは、多結晶窒化ガリウムを含み、
前記第1の接着層は、テトラエチルオルトシリケート(TEOS)を含み、
前記導電層は、ポリシリコンを含み、
前記第2の接着層は、TEOSを含み、
前記バリア層は、窒化シリコンを含み、
前記接合層は、酸化シリコンを含む、請求項11に記載の基板。
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017218536A1 (en) * | 2016-06-14 | 2017-12-21 | Quora Technology, Inc. | Engineered substrate structure for power and rf applications |
US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
US10622468B2 (en) | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
US10734303B2 (en) * | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
US10586844B2 (en) * | 2018-01-23 | 2020-03-10 | Texas Instruments Incorporated | Integrated trench capacitor formed in an epitaxial layer |
TWI692869B (zh) * | 2019-05-03 | 2020-05-01 | 世界先進積體電路股份有限公司 | 基底及其製造方法 |
CN111987140A (zh) * | 2019-05-21 | 2020-11-24 | 世界先进积体电路股份有限公司 | 基底及其制造方法 |
JP7319227B2 (ja) | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Iii-v族化合物結晶用ベース基板及びその製造方法 |
KR20230020968A (ko) | 2020-06-09 | 2023-02-13 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 |
JP2022012558A (ja) | 2020-07-01 | 2022-01-17 | 信越化学工業株式会社 | 大口径iii族窒化物系エピタキシャル成長用基板とその製造方法 |
KR102446604B1 (ko) * | 2021-01-04 | 2022-09-26 | 한국과학기술원 | 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법 |
EP4289994A1 (en) | 2021-02-05 | 2023-12-13 | Shin-Etsu Handotai Co., Ltd. | Nitride semiconductor substrate and method for producing same |
JP2022131086A (ja) | 2021-02-26 | 2022-09-07 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
WO2022191079A1 (ja) * | 2021-03-10 | 2022-09-15 | 信越化学工業株式会社 | エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法 |
JP7334869B2 (ja) * | 2021-06-08 | 2023-08-29 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JP2023025432A (ja) * | 2021-08-10 | 2023-02-22 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JPWO2023047864A1 (ja) * | 2021-09-21 | 2023-03-30 | ||
WO2023063278A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
WO2023063046A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JP2023065227A (ja) | 2021-10-27 | 2023-05-12 | 信越化学工業株式会社 | エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法 |
JP2023098137A (ja) * | 2021-12-28 | 2023-07-10 | 信越化学工業株式会社 | 高特性エピタキシャル成長用基板とその製造方法 |
JP2024070722A (ja) * | 2022-11-11 | 2024-05-23 | 信越半導体株式会社 | 高周波デバイス用基板およびその製造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008294425A (ja) | 2007-04-27 | 2008-12-04 | Semiconductor Energy Lab Co Ltd | Soi基板及びその製造方法、並びに半導体装置 |
US20110147772A1 (en) | 2009-12-16 | 2011-06-23 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
US20120052635A1 (en) | 2010-08-30 | 2012-03-01 | Pil-Kyu Kang | Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate |
JP2014031300A (ja) | 2012-08-06 | 2014-02-20 | Namiki Precision Jewel Co Ltd | 酸化ガリウム基板及びその製造方法 |
JP2016051886A (ja) | 2009-05-28 | 2016-04-11 | インターナショナル・レクティファイアー・コーポレーションInternational Rectifier Corporation | モノリシック集積iii−v族及びiv族複合半導体デバイス及び集積回路 |
JP2016058693A (ja) | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法 |
WO2017096032A1 (en) | 2015-12-04 | 2017-06-08 | Quora Technology, Inc. | Wide band gap device integrated circuit architecture on engineered substrate |
WO2018020849A1 (ja) | 2016-07-26 | 2018-02-01 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2019523994A (ja) | 2016-06-14 | 2019-08-29 | クロミス,インコーポレイテッド | 電力およびrf用途用の設計された基板構造 |
JP2021525215A (ja) | 2018-11-15 | 2021-09-24 | 中国科学院上海微系統与信息技術研究所 | 酸化ガリウム半導体構造及びその調製方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4430149A (en) * | 1981-12-30 | 1984-02-07 | Rca Corporation | Chemical vapor deposition of epitaxial silicon |
US7238595B2 (en) * | 2003-03-13 | 2007-07-03 | Asm America, Inc. | Epitaxial semiconductor deposition methods and structures |
US6972255B2 (en) * | 2003-07-28 | 2005-12-06 | Freescale Semiconductor, Inc. | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
US20060284167A1 (en) * | 2005-06-17 | 2006-12-21 | Godfrey Augustine | Multilayered substrate obtained via wafer bonding for power applications |
US7420226B2 (en) * | 2005-06-17 | 2008-09-02 | Northrop Grumman Corporation | Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates |
CN100424878C (zh) * | 2006-11-21 | 2008-10-08 | 华中科技大学 | 铁电存储器用铁电薄膜电容及其制备方法 |
CN101192533B (zh) * | 2006-11-28 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、蚀刻阻挡层的形成方法 |
FR2912552B1 (fr) * | 2007-02-14 | 2009-05-22 | Soitec Silicon On Insulator | Structure multicouche et son procede de fabrication. |
US7732301B1 (en) | 2007-04-20 | 2010-06-08 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
US20090278233A1 (en) * | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
CN101621005B (zh) * | 2008-07-02 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | Tft monos或sonos存储单元结构 |
CN102044473B (zh) * | 2009-10-13 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
CN102456721A (zh) * | 2010-10-17 | 2012-05-16 | 金木子 | 陶瓷衬底的氮化镓基芯片及制造方法 |
US8546165B2 (en) * | 2010-11-02 | 2013-10-01 | Tsmc Solid State Lighting Ltd. | Forming light-emitting diodes using seed particles |
JP2014507363A (ja) * | 2010-12-14 | 2014-03-27 | ヘクサテック,インコーポレイテッド | 多結晶質窒化アルミニウム焼結体の熱膨張処理、および半導体製造へのその応用 |
JP2012142385A (ja) * | 2010-12-28 | 2012-07-26 | Sumitomo Electric Ind Ltd | 半導体デバイスの製造方法 |
US8916483B2 (en) * | 2012-03-09 | 2014-12-23 | Soitec | Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum |
US9082692B2 (en) * | 2013-01-02 | 2015-07-14 | Micron Technology, Inc. | Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices |
US9650723B1 (en) * | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
JP6176069B2 (ja) * | 2013-11-13 | 2017-08-09 | 住友電気工業株式会社 | Iii族窒化物複合基板およびその製造方法、積層iii族窒化物複合基板、ならびにiii族窒化物半導体デバイスおよびその製造方法 |
US9837363B2 (en) * | 2014-07-04 | 2017-12-05 | Mitsubishi Materials Corporation | Power-module substrate unit and power module |
US9997391B2 (en) * | 2015-10-19 | 2018-06-12 | QROMIS, Inc. | Lift off process for chip scale package solid state devices on engineered substrate |
-
2017
- 2017-06-13 WO PCT/US2017/037252 patent/WO2017218536A1/en unknown
- 2017-06-13 CN CN201780049691.6A patent/CN109844184B/zh active Active
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- 2017-06-13 TW TW110133509A patent/TWI793755B/zh active
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- 2017-06-13 JP JP2018565352A patent/JP6626607B2/ja active Active
-
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- 2019-12-01 JP JP2019217661A patent/JP7001660B2/ja active Active
-
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- 2021-12-24 JP JP2021210164A patent/JP7416556B2/ja active Active
-
2023
- 2023-09-25 JP JP2023161626A patent/JP2023182643A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008294425A (ja) | 2007-04-27 | 2008-12-04 | Semiconductor Energy Lab Co Ltd | Soi基板及びその製造方法、並びに半導体装置 |
JP2016051886A (ja) | 2009-05-28 | 2016-04-11 | インターナショナル・レクティファイアー・コーポレーションInternational Rectifier Corporation | モノリシック集積iii−v族及びiv族複合半導体デバイス及び集積回路 |
US20110147772A1 (en) | 2009-12-16 | 2011-06-23 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
US20120052635A1 (en) | 2010-08-30 | 2012-03-01 | Pil-Kyu Kang | Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate |
JP2014031300A (ja) | 2012-08-06 | 2014-02-20 | Namiki Precision Jewel Co Ltd | 酸化ガリウム基板及びその製造方法 |
JP2016058693A (ja) | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法 |
WO2017096032A1 (en) | 2015-12-04 | 2017-06-08 | Quora Technology, Inc. | Wide band gap device integrated circuit architecture on engineered substrate |
JP2019523994A (ja) | 2016-06-14 | 2019-08-29 | クロミス,インコーポレイテッド | 電力およびrf用途用の設計された基板構造 |
WO2018020849A1 (ja) | 2016-07-26 | 2018-02-01 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2021525215A (ja) | 2018-11-15 | 2021-09-24 | 中国科学院上海微系統与信息技術研究所 | 酸化ガリウム半導体構造及びその調製方法 |
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EP3469119A4 (en) | 2020-02-26 |
JP2023182643A (ja) | 2023-12-26 |
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WO2017218536A1 (en) | 2017-12-21 |
JP7001660B2 (ja) | 2022-01-19 |
SG11201810919UA (en) | 2019-01-30 |
CN109844184A (zh) | 2019-06-04 |
TW202203473A (zh) | 2022-01-16 |
EP3469119A1 (en) | 2019-04-17 |
CN109844184B (zh) | 2021-11-30 |
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JP2022058405A (ja) | 2022-04-12 |
TWI743136B (zh) | 2021-10-21 |
JP6626607B2 (ja) | 2019-12-25 |
KR102361057B1 (ko) | 2022-02-08 |
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CN114256068A (zh) | 2022-03-29 |
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