JP6309766B2 - 薄膜トランジスタアレイ基板 - Google Patents
薄膜トランジスタアレイ基板 Download PDFInfo
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- JP6309766B2 JP6309766B2 JP2014001779A JP2014001779A JP6309766B2 JP 6309766 B2 JP6309766 B2 JP 6309766B2 JP 2014001779 A JP2014001779 A JP 2014001779A JP 2014001779 A JP2014001779 A JP 2014001779A JP 6309766 B2 JP6309766 B2 JP 6309766B2
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- protective film
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- 239000000758 substrate Substances 0.000 title claims description 118
- 239000010409 thin film Substances 0.000 title claims description 99
- 239000010408 film Substances 0.000 claims description 252
- 230000001681 protective effect Effects 0.000 claims description 130
- 230000005684 electric field Effects 0.000 claims description 67
- 230000002093 peripheral effect Effects 0.000 claims description 43
- 238000004519 manufacturing process Methods 0.000 description 43
- 239000004020 conductor Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 21
- 238000005530 etching Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000013039 cover film Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
まず、図8乃至図11に示したように、絶縁基板110の上にゲート電極124とゲートパッド部129を含むゲート導電体121、124、129を形成し、ゲート導電体121、124、129の上にゲート絶縁膜140を積層し、半導体151、154、抵抗性接触部材161、163、165、そしてソース電極173およびデータパッド部179を含むデータ線171とドレイン電極175を含むデータ導電体171、173、175、179を形成する。
1389146138250_0
(chemical mechanical polishing)方式などで一部除去して、有機膜180yの高さを一部低くしながら第1開口部185aの幅を第1接触孔185と同じか広く形成して、第1接触孔185が第1保護膜180xおよび有機膜180yにおいて整列して形成される。
1389146138250_1
過程を省略してもよい。
しかし、周辺領域に位置する第2接触孔181はゲート絶縁膜140、第1保護膜180x、そして第2保護膜180zに形成されており、第3接触孔182は第1保護膜180xおよび第2保護膜180zに形成されている。
Claims (9)
- 表示領域と前記表示領域周辺の周辺領域を含む基板、
前記基板の表示領域に位置するゲート線と前記基板の周辺領域に位置するゲートパッド部、
前記ゲート線および前記ゲートパッド部の上に位置するゲート絶縁膜、前記ゲート絶縁膜の上に位置し、前記基板の表示領域に位置するデータ線およびドレイン電極と前記基板の周辺領域に位置するデータパッド部、
前記ドレイン電極を露出する第1接触孔を有する第1保護膜、
前記第1保護膜の前記第1接触孔を通して前記ドレイン電極と接続された第1電界生成電極、
前記第1電界生成電極上に位置する第2保護膜、そして
前記第2保護膜の上に位置する第2電界生成電極を含み、
前記第1接触孔に位置する前記第1電界生成電極は前記第2保護膜によって覆われており、
前記周辺領域に位置する前記ゲート絶縁膜、前記第1保護膜および前記第2保護膜は前記ゲートパッド部を露出する第2接触孔を有し、そして
前記周辺領域に位置する前記第1保護膜および前記第2保護膜は前記データパッド部を露出する第3接触孔を有することを特徴とする薄膜トランジスタアレイ基板。 - 前記第1保護膜と前記第2保護膜の間に位置する有機膜をさらに含むことを特徴とする請求項1に記載の薄膜トランジスタアレイ基板。
- 前記有機膜は色フィルタであることを特徴とする請求項2に記載の薄膜トランジスタアレイ基板。
- 前記有機膜は前記表示領域に位置し、前記周辺領域には位置しないことを特徴とする請求項2に記載の薄膜トランジスタアレイ基板。
- 前記有機膜は前記表示領域と前記周辺領域に位置し、前記周辺領域に位置する前記有機膜の厚さは前記表示領域に位置する前記有機膜の厚さより薄いことを特徴とする請求項2に記載の薄膜トランジスタアレイ基板。
- 前記第1電界生成電極と前記第2電界生成電極のうちのいずれか一つは複数の枝電極を有することを特徴とする請求項2に記載の薄膜トランジスタアレイ基板。
- 前記第1接触孔は前記ドレイン電極と重畳しない前記ゲート線の一部と重畳し、前記第1接触孔と重畳する前記ゲート線の一部は前記ゲート絶縁膜で覆われていることを特徴とする請求項2に記載の薄膜トランジスタアレイ基板。
- 前記第1電界生成電極と前記第2電界生成電極のうちのいずれか一つは複数の枝電極を有することを特徴とする請求項1に記載の薄膜トランジスタアレイ基板。
- 前記第1接触孔は前記ドレイン電極と重畳しない前記ゲート線の一部と重畳し、前記第1接触孔と重畳する前記ゲート線の一部は前記ゲート絶縁膜で覆われていることを特徴とする請求項1に記載の薄膜トランジスタアレイ基板。
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Application Number | Priority Date | Filing Date | Title |
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KR10-2013-0002982 | 2013-01-10 | ||
KR1020130002982A KR101994974B1 (ko) | 2013-01-10 | 2013-01-10 | 박막 트랜지스터 표시판 및 그 제조 방법 |
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JP2014134798A JP2014134798A (ja) | 2014-07-24 |
JP6309766B2 true JP6309766B2 (ja) | 2018-04-11 |
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US (2) | US9123873B2 (ja) |
EP (1) | EP2755082A3 (ja) |
JP (1) | JP6309766B2 (ja) |
KR (1) | KR101994974B1 (ja) |
CN (1) | CN103926770B (ja) |
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TWI526761B (zh) * | 2014-08-20 | 2016-03-21 | 友達光電股份有限公司 | 液晶顯示面板 |
US11906864B2 (en) | 2016-02-02 | 2024-02-20 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Dual-gate array substrate and display device |
CN105572996B (zh) * | 2016-02-02 | 2019-01-25 | 京东方科技集团股份有限公司 | 一种双栅极阵列基板及显示装置 |
US11442318B2 (en) | 2016-02-02 | 2022-09-13 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Dual-gate array substrate and display device |
CN108388057B (zh) * | 2018-03-16 | 2020-09-29 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板 |
CN110473895B (zh) * | 2018-05-09 | 2022-01-18 | 京东方科技集团股份有限公司 | 一种oled显示基板及其制作方法、显示装置 |
CN210429261U (zh) * | 2019-09-12 | 2020-04-28 | 昆山国显光电有限公司 | 显示面板及显示装置 |
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JP3114723B2 (ja) * | 1998-08-03 | 2000-12-04 | 日本電気株式会社 | 液晶表示装置およびその製造方法 |
KR20010063295A (ko) | 1999-12-22 | 2001-07-09 | 박종섭 | 인플랜 필드 스위칭 모드 액정표시장치의 제조방법 |
KR100335498B1 (ko) | 1999-12-22 | 2002-05-08 | 윤종용 | 반도체 소자의 퓨즈부 구조 및 그 형성방법 |
TW575775B (en) | 2001-01-29 | 2004-02-11 | Hitachi Ltd | Liquid crystal display device |
JP4722319B2 (ja) * | 2001-04-26 | 2011-07-13 | 株式会社日立製作所 | 液晶表示装置 |
JP2002368228A (ja) * | 2001-06-13 | 2002-12-20 | Matsushita Electric Ind Co Ltd | 液晶表示装置とその駆動方法 |
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2013
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- 2013-11-26 US US14/090,487 patent/US9123873B2/en active Active
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CN103926770A (zh) | 2014-07-16 |
EP2755082A3 (en) | 2014-08-27 |
US9515096B2 (en) | 2016-12-06 |
EP2755082A2 (en) | 2014-07-16 |
KR101994974B1 (ko) | 2019-07-02 |
JP2014134798A (ja) | 2014-07-24 |
US9123873B2 (en) | 2015-09-01 |
US20150364497A1 (en) | 2015-12-17 |
CN103926770B (zh) | 2019-05-10 |
US20140191256A1 (en) | 2014-07-10 |
KR20140090852A (ko) | 2014-07-18 |
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