JP6266349B2 - 蒸着マスク - Google Patents
蒸着マスク Download PDFInfo
- Publication number
- JP6266349B2 JP6266349B2 JP2014001168A JP2014001168A JP6266349B2 JP 6266349 B2 JP6266349 B2 JP 6266349B2 JP 2014001168 A JP2014001168 A JP 2014001168A JP 2014001168 A JP2014001168 A JP 2014001168A JP 6266349 B2 JP6266349 B2 JP 6266349B2
- Authority
- JP
- Japan
- Prior art keywords
- inclined surface
- vapor deposition
- deposition mask
- layer
- carbon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000008020 evaporation Effects 0.000 title description 3
- 238000001704 evaporation Methods 0.000 title description 3
- 238000007740 vapor deposition Methods 0.000 claims description 97
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 68
- 230000008021 deposition Effects 0.000 claims description 45
- 229910052799 carbon Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 28
- 239000002041 carbon nanotube Substances 0.000 claims description 16
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 16
- 229910021389 graphene Inorganic materials 0.000 claims description 16
- 230000001154 acute effect Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 55
- 238000000151 deposition Methods 0.000 description 43
- 239000000463 material Substances 0.000 description 13
- 239000013256 coordination polymer Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 5
- 238000010891 electric arc Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/04—Diffusion into selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/04—Treatment of selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Description
SUB 蒸着基板、
SP 蒸着源、
CP 蒸着チャンバー、
DM 蒸着物質、
100 蒸着マスク、
110 ボディー部、
120 炭素層。
Claims (10)
- 蒸着基板に接触する第1面及び前記第1面に対向する第2面を含み、前記第2面から前記第1面を貫通する複数個の開口部が形成されたボディー部と、
少なくとも前記第1面に配置され、炭素ナノチューブ及びグラフェンのうち少なくともいずれか1つを含む炭素層と、を含む蒸着マスク。 - 前記炭素層は前記炭素ナノチューブで構成された第1層を含む請求項1に記載の蒸着マスク。
- 前記炭素層は前記第1層に重畳するように配置され、前記グラフェンで構成された第2層を含む請求項2に記載の蒸着マスク。
- 前記炭素層は前記炭素ナノチューブで構成された複数個の第1層と前記グラフェンで構成された複数個の第2層とを含む請求項1〜3のいずれか一項に記載の蒸着マスク。
- 前記炭素層は前記第2面上にさらに配置されたことを特徴とする請求項1〜4のいずれか一項に記載の蒸着マスク。
- 前記複数個の開口部の各々は、前記第1面と前記第2面とを連結する側壁を含み、前記炭素層は前記側壁上にさらに配置されたことを特徴とする請求項1〜5のいずれか一項に記載の蒸着マスク。
- 前記側壁は、
第1傾斜面、前記第1傾斜面に対向する第2傾斜面、前記第1傾斜面と前記第2傾斜面とを連結する第3傾斜面、及び前記第3傾斜面に対向し、前記第1傾斜面と前記第2傾斜面とを連結する第4傾斜面を含む請求項6に記載の蒸着マスク。 - 前記第1傾斜面、前記第2傾斜面、前記第3傾斜面、及び前記第4傾斜面の各々は前記第1面と鋭角を成し、前記第2面と鈍角を成すことを特徴とする請求項7に記載の蒸着マスク。
- 前記第1傾斜面と前記第2傾斜面は前記第1面に対して同一の挟み角を有することを特徴とする請求項7又は8に記載の蒸着マスク。
- 前記炭素層は前記第1傾斜面、前記第2傾斜面、前記第3傾斜面、及び前記第4傾斜面上にさらに配置されたことを特徴とする請求項7〜9のいずれか一項に記載の蒸着マスク。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0010023 | 2013-01-29 | ||
KR1020130010023A KR102114950B1 (ko) | 2013-01-29 | 2013-01-29 | 증착 마스크 및 이를 포함하는 증착 설비 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014145130A JP2014145130A (ja) | 2014-08-14 |
JP6266349B2 true JP6266349B2 (ja) | 2018-01-24 |
Family
ID=51221554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014001168A Active JP6266349B2 (ja) | 2013-01-29 | 2014-01-07 | 蒸着マスク |
Country Status (5)
Country | Link |
---|---|
US (1) | US10161030B2 (ja) |
JP (1) | JP6266349B2 (ja) |
KR (1) | KR102114950B1 (ja) |
CN (1) | CN103966545B (ja) |
TW (1) | TWI628506B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016186386A1 (ko) * | 2015-05-15 | 2016-11-24 | 주식회사 다원시스 | 유기막 증착 장치와, 방법 및 유기막 장치 |
CN105513812B (zh) * | 2016-01-29 | 2018-06-22 | 白德旭 | 一种石墨烯太阳能电池及其制备方法 |
KR102373442B1 (ko) * | 2017-09-08 | 2022-03-14 | 삼성디스플레이 주식회사 | 박막증착용 마스크와, 이의 제조방법 |
KR102150450B1 (ko) * | 2018-05-11 | 2020-09-01 | 주식회사 선익시스템 | 비상 탈출이 가능한 진공챔버 및 이를 포함하는 증착장치 |
CN109324472A (zh) * | 2018-11-16 | 2019-02-12 | 浙江大学昆山创新中心 | 一种掩模板保护方法 |
CN111411323B (zh) * | 2020-03-31 | 2023-01-20 | 云谷(固安)科技有限公司 | 一种掩膜板 |
CN112205301A (zh) * | 2020-10-13 | 2021-01-12 | 姬世伟 | 一种动物笼舍养殖的防病菌卫生养殖装置 |
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US5268068A (en) * | 1992-12-08 | 1993-12-07 | International Business Machines Corporation | High aspect ratio molybdenum composite mask method |
JP2002067267A (ja) | 2000-08-24 | 2002-03-05 | Citizen Watch Co Ltd | スクリーン印刷機およびそれに用いる印刷マスクの製造方法 |
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JP4092914B2 (ja) * | 2001-01-26 | 2008-05-28 | セイコーエプソン株式会社 | マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法 |
JP2005093484A (ja) | 2003-09-12 | 2005-04-07 | Toppan Printing Co Ltd | ステンシルマスク及びその製造方法 |
KR100561705B1 (ko) | 2004-06-18 | 2006-03-15 | 전자부품연구원 | 니켈 전주도금법을 이용한 금속마스크 제작방법 및 이를이용한 금속 마스크 |
JP2006205716A (ja) | 2004-12-28 | 2006-08-10 | Yuken Industry Co Ltd | メタルマスク |
JP2006198489A (ja) | 2005-01-19 | 2006-08-03 | Toshiba Corp | 紙葉類の搬送ギャップ補正装置 |
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KR100811266B1 (ko) | 2006-09-01 | 2008-03-07 | 주식회사 하이닉스반도체 | 하드 마스크를 이용한 선택적 식각 방법 및 이를 이용한메모리 소자의 소자분리 형성 방법 |
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JP2009059804A (ja) | 2007-08-30 | 2009-03-19 | Elpida Memory Inc | 半導体装置の製造方法およびハードマスク |
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-
2013
- 2013-01-29 KR KR1020130010023A patent/KR102114950B1/ko active IP Right Grant
- 2013-08-28 US US14/012,917 patent/US10161030B2/en active Active
- 2013-12-11 CN CN201310674417.1A patent/CN103966545B/zh active Active
-
2014
- 2014-01-07 JP JP2014001168A patent/JP6266349B2/ja active Active
- 2014-01-07 TW TW103100489A patent/TWI628506B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102114950B1 (ko) | 2020-05-26 |
CN103966545A (zh) | 2014-08-06 |
CN103966545B (zh) | 2018-04-27 |
TWI628506B (zh) | 2018-07-01 |
US20140209025A1 (en) | 2014-07-31 |
KR20140096878A (ko) | 2014-08-06 |
JP2014145130A (ja) | 2014-08-14 |
US10161030B2 (en) | 2018-12-25 |
TW201430487A (zh) | 2014-08-01 |
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