JP6233936B2 - ウェハをダイに分割する方法 - Google Patents
ウェハをダイに分割する方法 Download PDFInfo
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- JP6233936B2 JP6233936B2 JP2015230840A JP2015230840A JP6233936B2 JP 6233936 B2 JP6233936 B2 JP 6233936B2 JP 2015230840 A JP2015230840 A JP 2015230840A JP 2015230840 A JP2015230840 A JP 2015230840A JP 6233936 B2 JP6233936 B2 JP 6233936B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- High Energy & Nuclear Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
Description
Claims (12)
- 複数の分割ラインによって区切られた複数のデバイスを備えたデバイス領域(2)と、前記デバイス領域(2)の周りにデバイスが形成されない周辺限界領域(3)とを一面(1)に有するウェハ(W)をダイに分割する方法であって、
前記ウェハ(W)の前記一面(1)に前記ウェハ上のデバイスを保護する為の接着テープ(4)を付けるステップであって、前記接着テープ(4)が全部のデバイスに接着する、ステップと、
接続手段(10)によって、前記デバイスと接触する前記面の反対側にある前記接着テープ(4)の面に、前記接着テープ(4)を支持する為のキャリア(7)を接続するステップと、
前記ウェハの高さを調整する為に前記一面(1)の反対側にある前記ウェハ(W)の面(6)を研削するステップと、
前記分割ラインに沿って前記ウェハ(W)を切断するステップと、
を備え、
前記接続手段(10)は、環状形状を呈し、前記ウェハ(W)の中央部に延びず、
前記ウェハ(W)は、前記ダイが互いに分離されるように完全に分割されることを特徴とする、前記方法。 - 接続手段(10)は、接着特性を呈し、前記接着特性は、エネルギの入力によって取り外し可能であり、前記接続手段(10)は、UV硬化性接着剤、熱硬化性接着剤、それらの組合せを含む、請求項1に記載の方法。
- キャリア(7)および接着テープ(4)の間の接続を解除する為に前記接続手段(10)にエネルギを入力するステップと、
前記キャリア(7)を前記接着テープ(4)から取り除くステップと、
を更に有する、請求項2に記載の方法。 - 前記接続手段(10)の挿入の為に前記キャリア(7)において、凹部を形成する、請求項1〜3のいずれか一項に記載の方法。
- 前記ウェハ(W)の一面(1)が、レーザによって部分的に切断され、前記ウェハの更なる領域が機械的に切断される、請求項1〜4のいずれか一項に記載の方法。
- 前記ウェハの更なる領域が、前記ウェハ(W)の前記一面(1)から、或いは、前記一面(1)の反対側にある前記ウェハ(W)の面(6)から、機械的に切断される、請求項5に記載の方法。
- 前記一面(1)の反対側にある前記ウェハ(W)の面(6)は、部分的に機械的に切断され、前記ウェハ(W)の更なる領域は、前記一面(1)の反対側にある前記ウェハ(W)の前記面(6)からレーザによって切断される、請求項1〜4のいずれか一項に記載の方法。
- 前記ウェハの前記切断は、前記ウェハの研削前に行われる、請求項1〜7のいずれか一項に記載の方法。
- 前記列挙された順序で請求項1に記載のステップが行われる、請求項1〜7のいずれか一項に記載の方法。
- 前記デバイスに接触する表面の反対側にある前記接着テープ(4)の表面は、前記一面(1)の反対側にある前記ウェハ(W)の前記表面と平行にされている、請求項1〜9のいずれか一項に記載の方法。
- 前記ウェハ(W)の研削された表面に接着性ピックアップテープ(11)を付けるステップを更に有する、請求項1〜10のいずれか一項に記載の方法。
- 前記キャリア(7)は、シリコンおよび/またはガラスで形成される、請求項1〜11のいずれか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014227005.7 | 2014-12-29 | ||
DE102014227005.7A DE102014227005B4 (de) | 2014-12-29 | 2014-12-29 | Verfahren zum Aufteilen eines Wafers in Chips |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016127273A JP2016127273A (ja) | 2016-07-11 |
JP6233936B2 true JP6233936B2 (ja) | 2017-11-22 |
Family
ID=56116737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015230840A Active JP6233936B2 (ja) | 2014-12-29 | 2015-11-26 | ウェハをダイに分割する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9704749B2 (ja) |
JP (1) | JP6233936B2 (ja) |
KR (1) | KR101747561B1 (ja) |
CN (1) | CN105742212B (ja) |
DE (1) | DE102014227005B4 (ja) |
MY (1) | MY175846A (ja) |
SG (1) | SG10201509836PA (ja) |
TW (1) | TWI607486B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016112976A1 (de) * | 2016-07-14 | 2018-01-18 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Wafers und Schichtstapel |
KR102030409B1 (ko) * | 2017-07-28 | 2019-10-10 | (주) 예스티 | 웨이퍼 다이싱 방법 및 웨이퍼를 다이싱하기 위한 시스템 |
KR102030398B1 (ko) * | 2017-07-28 | 2019-10-10 | (주) 예스티 | 웨이퍼 다이싱 방법 및 웨이퍼를 다이싱하기 위한 시스템 |
Family Cites Families (25)
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US6184109B1 (en) * | 1997-07-23 | 2001-02-06 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
US6294439B1 (en) * | 1997-07-23 | 2001-09-25 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
JP2001035817A (ja) * | 1999-07-22 | 2001-02-09 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
TWI241674B (en) * | 2001-11-30 | 2005-10-11 | Disco Corp | Manufacturing method of semiconductor chip |
JP3612317B2 (ja) * | 2001-11-30 | 2005-01-19 | 株式会社東芝 | 半導体装置の製造方法 |
JP2003234455A (ja) * | 2002-02-07 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 電子デバイスの製造方法、電子デバイスおよび電子デバイス装置 |
JP2004014956A (ja) * | 2002-06-11 | 2004-01-15 | Shinko Electric Ind Co Ltd | 微小半導体素子の加工処理方法 |
JP4462997B2 (ja) * | 2003-09-26 | 2010-05-12 | 株式会社ディスコ | ウェーハの加工方法 |
DE20318462U1 (de) * | 2003-11-26 | 2004-03-11 | Infineon Technologies Ag | Anordnung elektronischer Halbleiterbauelemente auf einem Trägersystem zur Behandlung der Halbleiterbauelemente mit einem flüssigen Medium |
US8426293B2 (en) * | 2004-07-09 | 2013-04-23 | Semiconductor Energy Laboratory Co., Ltd. | IC chip and its manufacturing method |
JP2008135446A (ja) | 2006-11-27 | 2008-06-12 | Philtech Inc | Rfパウダーの製造方法 |
JP2008258282A (ja) * | 2007-04-02 | 2008-10-23 | Toshiba Corp | 半導体ウェハのチップ化方法 |
CN101809718A (zh) * | 2007-12-20 | 2010-08-18 | 立山机械股份有限公司 | 黏着材的黏着方法及黏着装置 |
US8043940B2 (en) * | 2008-06-02 | 2011-10-25 | Renesas Electronics Corporation | Method for manufacturing semiconductor chip and semiconductor device |
JP5308213B2 (ja) * | 2009-03-31 | 2013-10-09 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置の製造方法 |
JP5495647B2 (ja) | 2009-07-17 | 2014-05-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP2010056562A (ja) * | 2009-11-26 | 2010-03-11 | Nitto Denko Corp | 半導体チップの製造方法 |
JP2011159679A (ja) * | 2010-01-29 | 2011-08-18 | Furukawa Electric Co Ltd:The | チップの製造方法 |
US9559004B2 (en) * | 2011-05-12 | 2017-01-31 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy |
JP2013135038A (ja) * | 2011-12-26 | 2013-07-08 | Elpida Memory Inc | 半導体装置の製造方法 |
US8580655B2 (en) * | 2012-03-02 | 2013-11-12 | Disco Corporation | Processing method for bump-included device wafer |
JP2014017462A (ja) * | 2012-03-02 | 2014-01-30 | Fujifilm Corp | 半導体装置の製造方法 |
JP2014135348A (ja) * | 2013-01-09 | 2014-07-24 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP6078376B2 (ja) * | 2013-02-22 | 2017-02-08 | 株式会社ディスコ | ウエーハの加工方法 |
JP2014165388A (ja) * | 2013-02-26 | 2014-09-08 | Renesas Electronics Corp | 半導体装置の製造方法 |
-
2014
- 2014-12-29 DE DE102014227005.7A patent/DE102014227005B4/de active Active
-
2015
- 2015-11-19 MY MYPI2015704202A patent/MY175846A/en unknown
- 2015-11-26 JP JP2015230840A patent/JP6233936B2/ja active Active
- 2015-11-30 SG SG10201509836PA patent/SG10201509836PA/en unknown
- 2015-12-16 US US14/970,756 patent/US9704749B2/en active Active
- 2015-12-18 TW TW104142789A patent/TWI607486B/zh active
- 2015-12-23 KR KR1020150184831A patent/KR101747561B1/ko active IP Right Grant
- 2015-12-25 CN CN201510993795.5A patent/CN105742212B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN105742212B (zh) | 2019-08-30 |
JP2016127273A (ja) | 2016-07-11 |
KR20160080075A (ko) | 2016-07-07 |
DE102014227005A1 (de) | 2016-06-30 |
DE102014227005B4 (de) | 2023-09-07 |
SG10201509836PA (en) | 2016-07-28 |
US9704749B2 (en) | 2017-07-11 |
US20160190010A1 (en) | 2016-06-30 |
TWI607486B (zh) | 2017-12-01 |
KR101747561B1 (ko) | 2017-06-14 |
MY175846A (en) | 2020-07-13 |
CN105742212A (zh) | 2016-07-06 |
TW201635337A (zh) | 2016-10-01 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |