JP6205238B2 - 基準電圧発生装置 - Google Patents
基準電圧発生装置 Download PDFInfo
- Publication number
- JP6205238B2 JP6205238B2 JP2013222586A JP2013222586A JP6205238B2 JP 6205238 B2 JP6205238 B2 JP 6205238B2 JP 2013222586 A JP2013222586 A JP 2013222586A JP 2013222586 A JP2013222586 A JP 2013222586A JP 6205238 B2 JP6205238 B2 JP 6205238B2
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- JP
- Japan
- Prior art keywords
- reference voltage
- voltage generator
- resistor
- constant current
- nmos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Power Engineering (AREA)
Description
基準電圧発生装置は、ディプレション型NMOSトランジスタ(以下D型NMOSトランジスタ)1およびエンハンスメント型NMOSトランジスタ(以下E型NMOSトランジスタ)2を備えている。この部分に関しては従来の基準電圧発生装置と回路上は等価である。
2 E型NMOSトランジスタ
3、5 抵抗体
4 PMOSトランジスタ
6 NMOSトランジスタ
7 高精度トリミング可能な定電流源
8 ダイオード
Claims (3)
- 定電流を流す第1導電型ディプレション型MOSトランジスタと、
前記第1導電型ディプレション型MOSトランジスタに直列に接続された、ダイオード接続を有する第1導電型エンハンスメント型MOSトランジスタと、
前記第1導電型ディプレション型MOSトランジスタと前記第1導電型エンハンスメント型MOSトランジスタの周辺を囲む抵抗体と、
定電流源および前記定電流源に直列に接続されたダイオードとを備え、
前記ダイオードから出力される電圧に従って、前記抵抗体に流れる電流が制御されることを特徴とする基準電圧発生装置。 - 前記定電流源は設定温度に対し、トリミング可能であることを特徴とする請求項1に記載の基準電圧発生装置。
- 前記ダイオードから出力される電圧に従って、前記抵抗体の温度を一定にすることで、一定設定温度環境下で動作することを特徴とする請求項1に記載の基準電圧発生装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013222586A JP6205238B2 (ja) | 2013-10-25 | 2013-10-25 | 基準電圧発生装置 |
TW103135529A TWI654825B (zh) | 2013-10-25 | 2014-10-14 | 基準電壓產生裝置 |
KR1020140143218A KR20150048053A (ko) | 2013-10-25 | 2014-10-22 | 기준 전압 발생 장치 |
US14/521,669 US9804628B2 (en) | 2013-10-25 | 2014-10-23 | Reference voltage generator |
CN201410573195.9A CN104571244B (zh) | 2013-10-25 | 2014-10-24 | 基准电压产生装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013222586A JP6205238B2 (ja) | 2013-10-25 | 2013-10-25 | 基準電圧発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015084175A JP2015084175A (ja) | 2015-04-30 |
JP6205238B2 true JP6205238B2 (ja) | 2017-09-27 |
Family
ID=52994674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013222586A Active JP6205238B2 (ja) | 2013-10-25 | 2013-10-25 | 基準電圧発生装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9804628B2 (ja) |
JP (1) | JP6205238B2 (ja) |
KR (1) | KR20150048053A (ja) |
CN (1) | CN104571244B (ja) |
TW (1) | TWI654825B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020035307A (ja) * | 2018-08-31 | 2020-03-05 | エイブリック株式会社 | 定電流回路 |
JP2020177393A (ja) * | 2019-04-17 | 2020-10-29 | エイブリック株式会社 | 定電流回路及び半導体装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3781648A (en) * | 1973-01-10 | 1973-12-25 | Fairchild Camera Instr Co | Temperature compensated voltage regulator having beta compensating means |
GB1533231A (en) * | 1974-11-07 | 1978-11-22 | Hitachi Ltd | Electronic circuits incorporating an electronic compensating circuit |
JPS5318390A (en) | 1976-08-03 | 1978-02-20 | Toshiba Corp | Mos type field effect transistor circuit |
JPS56108258A (en) * | 1980-02-01 | 1981-08-27 | Seiko Instr & Electronics Ltd | Semiconductor device |
JPS61161749A (ja) * | 1985-01-11 | 1986-07-22 | Yokogawa Electric Corp | 半導体装置 |
JP3247402B2 (ja) | 1991-07-25 | 2002-01-15 | 株式会社東芝 | 半導体装置及び不揮発性半導体記憶装置 |
JP3940485B2 (ja) | 1997-02-27 | 2007-07-04 | 東芝マイクロエレクトロニクス株式会社 | 基準電圧発生回路 |
JP2000025258A (ja) * | 1998-07-13 | 2000-01-25 | Seiko Instruments Inc | サーマルヘッド及び発熱抵抗体の駆動用ic |
JP3519958B2 (ja) | 1998-10-07 | 2004-04-19 | 株式会社リコー | 基準電圧発生回路 |
JP2002140124A (ja) * | 2000-10-30 | 2002-05-17 | Seiko Epson Corp | 基準電圧回路 |
JP2002368107A (ja) * | 2001-06-07 | 2002-12-20 | Ricoh Co Ltd | 基準電圧発生回路とそれを用いた電源装置 |
JP2003283258A (ja) * | 2002-03-20 | 2003-10-03 | Ricoh Co Ltd | 低電圧動作の基準電圧源回路 |
US20060043957A1 (en) * | 2004-08-30 | 2006-03-02 | Carvalho Carlos M | Resistance trimming in bandgap reference voltage sources |
US7342407B2 (en) * | 2006-01-31 | 2008-03-11 | Advantest Corporation | Temperature compensation circuit and testing apparatus |
US8044677B2 (en) * | 2008-12-19 | 2011-10-25 | Stmicroelectronics S.R.L. | Electrical system, voltage reference generation circuit, and calibration method of the circuit |
JP4955042B2 (ja) * | 2009-05-18 | 2012-06-20 | 日本電波工業株式会社 | 恒温型の水晶発振器 |
US7932772B1 (en) | 2009-11-02 | 2011-04-26 | Delphia Technologies, Inc. | Curvature-compensated band-gap voltage reference circuit |
CN201548864U (zh) * | 2009-11-19 | 2010-08-11 | 贵州大学 | 高精度低漂移集成电压基准源电路 |
JP5957852B2 (ja) * | 2011-11-10 | 2016-07-27 | 株式会社ソシオネクスト | 半導体装置の検査装置及び検査方法 |
-
2013
- 2013-10-25 JP JP2013222586A patent/JP6205238B2/ja active Active
-
2014
- 2014-10-14 TW TW103135529A patent/TWI654825B/zh not_active IP Right Cessation
- 2014-10-22 KR KR1020140143218A patent/KR20150048053A/ko not_active Application Discontinuation
- 2014-10-23 US US14/521,669 patent/US9804628B2/en active Active
- 2014-10-24 CN CN201410573195.9A patent/CN104571244B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2015084175A (ja) | 2015-04-30 |
US20150115912A1 (en) | 2015-04-30 |
TW201531002A (zh) | 2015-08-01 |
CN104571244B (zh) | 2018-01-19 |
US9804628B2 (en) | 2017-10-31 |
TWI654825B (zh) | 2019-03-21 |
CN104571244A (zh) | 2015-04-29 |
KR20150048053A (ko) | 2015-05-06 |
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