JP6202119B2 - シリコン単結晶の製造方法 - Google Patents

シリコン単結晶の製造方法 Download PDF

Info

Publication number: JP6202119B2
Authority: JP; Japan
Prior art keywords: single crystal; silicon single; silicon; tail; growing
Prior art date: 2016-03-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2016049164A

Other languages

English (en)

Japanese (ja)

Other versions

JP2017165593A (ja

Inventor

三照林

渉杉村

小野　敏昭

敏昭小野

藤原　俊幸

俊幸藤原

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumco Corp

Original Assignee

Sumco Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-03-14

Filing date

2016-03-14

Publication date

2017-09-27

2016-03-14 Application filed by Sumco Corp filed Critical Sumco Corp

2016-03-14 Priority to JP2016049164A priority Critical patent/JP6202119B2/ja

2017-01-18 Priority to DE112017001292.9T priority patent/DE112017001292B4/de

2017-01-18 Priority to PCT/JP2017/001493 priority patent/WO2017159028A1/ja

2017-01-18 Priority to CN201780017529.6A priority patent/CN108779577B/zh

2017-01-18 Priority to KR1020187024238A priority patent/KR102095597B1/ko

2017-02-08 Priority to TW106104051A priority patent/TWI632257B/zh

2017-09-21 Publication of JP2017165593A publication Critical patent/JP2017165593A/ja

2017-09-27 Application granted granted Critical

2017-09-27 Publication of JP6202119B2 publication Critical patent/JP6202119B2/ja

Status Active legal-status Critical Current

2036-03-14 Anticipated expiration legal-status Critical

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP2016049164A 2016-03-14 2016-03-14 シリコン単結晶の製造方法 Active JP6202119B2 (ja)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
JP2016049164A JP6202119B2 (ja)	2016-03-14	2016-03-14	シリコン単結晶の製造方法
DE112017001292.9T DE112017001292B4 (de)	2016-03-14	2017-01-18	Verfahren zur Herstellung eines Silicium-Einkristalls
PCT/JP2017/001493 WO2017159028A1 (ja)	2016-03-14	2017-01-18	シリコン単結晶の製造方法
CN201780017529.6A CN108779577B (zh)	2016-03-14	2017-01-18	单晶硅的制造方法
KR1020187024238A KR102095597B1 (ko)	2016-03-14	2017-01-18	실리콘 단결정의 제조 방법
TW106104051A TWI632257B (zh)	2016-03-14	2017-02-08	單晶矽的製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2016049164A JP6202119B2 (ja)	2016-03-14	2016-03-14	シリコン単結晶の製造方法

Publications (2)

Publication Number	Publication Date
JP2017165593A JP2017165593A (ja)	2017-09-21
JP6202119B2 true JP6202119B2 (ja)	2017-09-27

Family

ID=59850929

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2016049164A Active JP6202119B2 (ja)	2016-03-14	2016-03-14	シリコン単結晶の製造方法

Country Status (6)

Country	Link
JP (1)	JP6202119B2 (ko)
KR (1)	KR102095597B1 (ko)
CN (1)	CN108779577B (ko)
DE (1)	DE112017001292B4 (ko)
TW (1)	TWI632257B (ko)
WO (1)	WO2017159028A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6885301B2 (ja) *	2017-11-07	2021-06-09	株式会社Sumco	単結晶の製造方法及び装置
JP7006573B2 (ja) *	2018-11-30	2022-01-24	株式会社Sumco	単結晶引き上げ装置、および、シリコン単結晶の製造方法
TWI698557B (zh) *	2018-12-28	2020-07-11	環球晶圓股份有限公司	矽單晶長晶方法及矽單晶長晶設備
KR102147459B1 (ko) *	2019-01-08	2020-08-24	에스케이실트론 주식회사	단결정 잉곳 성장 장치 및 단결정 잉곳 성장 방법
JP6777908B1 (ja) *	2019-11-19	2020-10-28	Ｆｔｂ研究所株式会社	単結晶成長装置、該単結晶成長装置の使用方法および単結晶成長方法
CN115369482A (zh) *	2021-05-21	2022-11-22	内蒙古中环协鑫光伏材料有限公司	一种适用于吸料实验的极限拉晶工艺
CN114752995A (zh) *	2022-05-31	2022-07-15	西安奕斯伟材料科技有限公司	一种用于拉晶炉的热场控制装置及拉晶炉

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH1045493A (ja) *	1996-07-30	1998-02-17	Sumitomo Sitix Corp	単結晶の製造方法
CN1178844A (zh) *	1996-08-08	1998-04-15	Memc电子材料有限公司	切克劳斯基法生长硅的温度和时间关系的控制方法
US5779791A (en)	1996-08-08	1998-07-14	Memc Electronic Materials, Inc.	Process for controlling thermal history of Czochralski-grown silicon
JPH10194890A (ja) *	1996-12-27	1998-07-28	Komatsu Electron Metals Co Ltd	シリコン単結晶の製造方法
JP4806974B2 (ja) *	2005-06-20	2011-11-02	株式会社Ｓｕｍｃｏ	シリコン単結晶育成方法
JP4760822B2 (ja) *	2007-12-14	2011-08-31	株式会社Ｓｕｍｃｏ	エピタキシャルウェーハの製造方法
JP5417735B2 (ja) *	2008-04-21	2014-02-19	株式会社Ｓｕｍｃｏ	シリコン単結晶の育成方法
JP5151777B2 (ja)	2008-07-30	2013-02-27	株式会社Ｓｕｍｃｏ	シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ
JP5375636B2 (ja)	2010-01-29	2013-12-25	株式会社Ｓｕｍｃｏ	シリコン単結晶の製造方法
KR101467103B1 (ko)	2013-06-21	2014-11-28	주식회사 엘지실트론	실리콘 단결정 성장 장치 및 그 성장 방법
CN104313682A (zh) *	2014-11-17	2015-01-28	天津市环欧半导体材料技术有限公司	一种快速提高直拉硅单晶生长速度的热场结构

2016
- 2016-03-14 JP JP2016049164A patent/JP6202119B2/ja active Active
2017
- 2017-01-18 WO PCT/JP2017/001493 patent/WO2017159028A1/ja active Application Filing
- 2017-01-18 DE DE112017001292.9T patent/DE112017001292B4/de active Active
- 2017-01-18 CN CN201780017529.6A patent/CN108779577B/zh active Active
- 2017-01-18 KR KR1020187024238A patent/KR102095597B1/ko active IP Right Grant
- 2017-02-08 TW TW106104051A patent/TWI632257B/zh active

Also Published As

Publication number	Publication date
WO2017159028A1 (ja)	2017-09-21
CN108779577A (zh)	2018-11-09
TWI632257B (zh)	2018-08-11
TW201800625A (zh)	2018-01-01
KR20180101586A (ko)	2018-09-12
DE112017001292B4 (de)	2023-03-16
JP2017165593A (ja)	2017-09-21
KR102095597B1 (ko)	2020-03-31
DE112017001292T5 (de)	2018-12-06
CN108779577B (zh)	2021-01-01

Legal Events

Date	Code	Title	Description
2017-07-21	TRDD	Decision of grant or rejection written
2017-08-01	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170801
2017-09-04	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170814
2017-09-08	R150	Certificate of patent or registration of utility model	Ref document number: 6202119 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150
2020-08-07	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2021-08-10	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2022-08-09	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2023-08-09	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250

Publication	Publication Date	Title
JP6202119B2 (ja)	2017-09-27	シリコン単結晶の製造方法
JP6583142B2 (ja)	2019-10-02	シリコン単結晶の製造方法及び装置
US9217208B2 (en)	2015-12-22	Apparatus for producing single crystal
JP5595318B2 (ja)	2014-09-24	単結晶引上装置及び単結晶引き上げ方法
CN114318500A (zh)	2022-04-12	一种用于拉制单晶硅棒的拉晶炉、方法及单晶硅棒
WO2018186150A1 (ja)	2018-10-11	熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法
JP5145721B2 (ja)	2013-02-20	シリコン単結晶の製造方法および製造装置
TWI635199B (zh)	2018-09-11	單晶矽的製造方法
JP5375636B2 (ja)	2013-12-25	シリコン単結晶の製造方法
JP6485286B2 (ja)	2019-03-20	シリコン単結晶の製造方法
JP6958632B2 (ja)	2021-11-02	シリコン単結晶及びその製造方法並びにシリコンウェーハ
JP2018188338A (ja)	2018-11-29	シリコン単結晶の製造方法及びシリコン単結晶
JP2009184863A (ja)	2009-08-20	単結晶製造装置及び単結晶製造方法
JP2004161566A (ja)	2004-06-10	シリコンウェーハの製造方法およびその製造装置およびシリコンウェーハ
WO1999037833A1 (fr)	1999-07-29	Appareil de tirage de cristal unique
JP5617812B2 (ja)	2014-11-05	シリコン単結晶ウエーハ、エピタキシャルウエーハ、及びそれらの製造方法
JP2020037499A (ja)	2020-03-12	熱遮蔽部材、単結晶引き上げ装置及び単結晶の製造方法
KR100558156B1 (ko)	2006-03-10	실리콘 단결정의 육성 방법
JP6658780B2 (ja)	2020-03-04	熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法
JP6699620B2 (ja)	2020-05-27	シリコン単結晶の製造方法
JP5500138B2 (ja)	2014-05-21	炭素ドープシリコン単結晶の製造方法
JP4360069B2 (ja)	2009-11-11	シリコン単結晶の育成方法
JP6702169B2 (ja)	2020-05-27	熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法
JP2008222483A (ja)	2008-09-25	シリコン単結晶の製造方法
JP2002137987A (ja)	2002-05-14	シリコン単結晶引き上げ装置、該装置を使用したシリコン単結晶の製造方法、及びシリコン単結晶