JP6194426B2 - オプトエレクトロニクス部品およびその製造方法 - Google Patents
オプトエレクトロニクス部品およびその製造方法 Download PDFInfo
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- JP6194426B2 JP6194426B2 JP2016532670A JP2016532670A JP6194426B2 JP 6194426 B2 JP6194426 B2 JP 6194426B2 JP 2016532670 A JP2016532670 A JP 2016532670A JP 2016532670 A JP2016532670 A JP 2016532670A JP 6194426 B2 JP6194426 B2 JP 6194426B2
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- 230000005693 optoelectronics Effects 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000004382 potting Methods 0.000 claims description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 230000005670 electromagnetic radiation Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
200 ハウジング
201 上面
202 下面
300 リードフレーム
301 上面
302 下面
310 第1の接触部
320 第2の接触部
400 ハウジングフレーム
410 キャビティ
420 基底領域
430 壁部
500 オプトエレクトロニクス半導体チップ
501 上面
502 下面
510 第1の電気コンタクトパッド
520 第2の電気コンタクトパッド
530 電気接続部
540 ボンドワイヤ
600 ポッティング部
610 第1の層
611 厚さ
612 表面
620 第2の層
621 厚さ
630 第3の層
Claims (12)
- 導電性の第1の接触部(310)を有するハウジング(200)と、
前記第1の接触部(310)上に配置されたオプトエレクトロニクス半導体チップ(500)と、を備え、
前記オプトエレクトロニクス半導体チップ(500)および前記第1の接触部(310)は、シリコーンを含む第1の層(610)によって少なくとも部分的に被覆され、
SiO2を含む第2の層(620)が前記第1の層(610)の表面(612)に配置され、
前記第2の層(620)の厚さ(621)は、10nm〜1μmであり、
第3の層(630)が前記第2の層(620)の上方に配置され、
前記第1の層(610)の厚さ(611)は、1μm〜100μmである、
オプトエレクトロニクス部品(100)。 - 前記第1の層(610)の厚さ(611)は、5μm〜20μmである、
請求項1に記載のオプトエレクトロニクス部品(100)。 - 前記第1の接触部(310)は、銅を含む、請求項1または2に記載のオプトエレクトロニクス部品(100)。
- 前記ハウジング(200)は、ハウジングフレーム(400)を有し、
前記第1の接触部(310)は、前記ハウジングフレーム(400)内に埋め込まれている、請求項1〜3のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 前記ハウジング(200)は、キャビティ(410)を有し、
前記第1の接触部(310)は、前記キャビティ(410)の基底領域(420)内に配置されている、請求項1〜4のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - 前記第2の層(620)の厚さ(621)は、50nm〜200nmである、請求項1〜5のいずれか一項に記載のオプトエレクトロニクス部品(100)。
- 前記ハウジング(200)は、前記第1の接触部(310)から電気的に絶縁された導電性の第2の接触部(320)を有し、
前記オプトエレクトロニクス半導体チップ(500)と前記第2の接触部(320)との間に電気接続部(540)が存在する、請求項1〜6のいずれか一項に記載のオプトエレクトロニクス部品(100)。 - − 導電性の第1の接触部(310)を有するハウジング(200)を設けるステップと;
− オプトエレクトロニクス半導体チップ(500)を前記第1の接触部(310)上に配置するステップと;
− シリコーンを含む第1の層(610)を前記オプトエレクトロニクス半導体チップ(500)および前記第1の接触部(310)上に少なくとも部分的に配置するステップと;
− SiO2を含む第2の層(620)を前記第1の層(610)の表面(612)に形成するステップであって、前記第2の層(620)を形成することは、前記第1の層(610)の一部を変化させることによって実行される、ステップと;
− 第3の層(630)を前記第2の層(620)の上方に配置するステップと、を含み、
前記第1の層(610)の厚さ(611)は、1μm〜100μmである、
オプトエレクトロニクス部品(100)の製造方法。 - 前記第1の層(610)の厚さ(611)は、5μm〜20μmである、
請求項8に記載のオプトエレクトロニクス部品(100)の製造方法。 - 前記第1の層(610)の前記一部を変化させることは、酸化によって実行される、請求項8または9に記載の方法。
- 前記第1の層(610)の前記一部を変化させることは、プラズマ処理によって実行される、請求項8〜10のいずれか一項に記載の方法。
- 前記第1の層(610)を配置するステップは、ポッティング法または噴射法によって実行される、請求項8〜11のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013215650.2A DE102013215650B4 (de) | 2013-08-08 | 2013-08-08 | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102013215650.2 | 2013-08-08 | ||
PCT/EP2014/066852 WO2015018843A1 (de) | 2013-08-08 | 2014-08-05 | Optoelektronisches bauelement und verfahren zu seiner herstellung |
Publications (2)
Publication Number | Publication Date |
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JP2016527729A JP2016527729A (ja) | 2016-09-08 |
JP6194426B2 true JP6194426B2 (ja) | 2017-09-06 |
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JP2016532670A Active JP6194426B2 (ja) | 2013-08-08 | 2014-08-05 | オプトエレクトロニクス部品およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9564566B2 (ja) |
JP (1) | JP6194426B2 (ja) |
CN (1) | CN105431952B (ja) |
DE (1) | DE102013215650B4 (ja) |
WO (1) | WO2015018843A1 (ja) |
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TWI575778B (zh) * | 2014-05-07 | 2017-03-21 | 新世紀光電股份有限公司 | 發光二極體封裝結構 |
US10622522B2 (en) * | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
DE102015107515A1 (de) | 2015-05-13 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen |
WO2019042559A1 (en) * | 2017-08-31 | 2019-03-07 | Osram Opto Semiconductors Gmbh | OPTOELECTRONIC COMPONENT |
CN107731758B (zh) * | 2017-09-13 | 2019-12-06 | 厦门市三安光电科技有限公司 | 一种半导体元件的固晶方法及半导体元件 |
CN111837245A (zh) | 2017-10-19 | 2020-10-27 | 亮锐有限责任公司 | 发光器件封装 |
TWI648878B (zh) * | 2018-05-15 | 2019-01-21 | 東貝光電科技股份有限公司 | Led發光源、led發光源之製造方法及其直下式顯示器 |
DE102019118543B4 (de) * | 2019-07-09 | 2023-02-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Anordnung von elektronischen halbleiterbauelementen und verfahren zum betrieb einer anordnung von elektronischen halbleiterbauelementen |
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JPH0729897A (ja) * | 1993-06-25 | 1995-01-31 | Nec Corp | 半導体装置の製造方法 |
DE102006008308A1 (de) * | 2006-02-23 | 2007-08-30 | Clariant International Limited | Polysilazane enthaltende Beschichtungen zur Vermeidung von Zunderbildung und Korrosion |
JP4973011B2 (ja) | 2006-05-31 | 2012-07-11 | 豊田合成株式会社 | Led装置 |
JP5233087B2 (ja) * | 2006-06-28 | 2013-07-10 | 日亜化学工業株式会社 | 発光装置およびその製造方法、パッケージ、発光素子実装用の基板 |
US7967476B2 (en) * | 2007-07-04 | 2011-06-28 | Nichia Corporation | Light emitting device including protective glass film |
JP5630948B2 (ja) * | 2007-07-04 | 2014-11-26 | 日亜化学工業株式会社 | 発光装置 |
SG153673A1 (en) * | 2007-12-10 | 2009-07-29 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices |
JPWO2009107535A1 (ja) * | 2008-02-25 | 2011-06-30 | 株式会社東芝 | 白色ledランプ、バックライト、発光装置、表示装置および照明装置 |
JP2010239043A (ja) * | 2009-03-31 | 2010-10-21 | Citizen Holdings Co Ltd | Led光源及びled光源の製造方法 |
TWI374996B (en) | 2009-04-15 | 2012-10-21 | Semi Photonics Co Ltd | Light emitting device with high cri and high luminescence efficiency |
JP2011204986A (ja) * | 2010-03-26 | 2011-10-13 | Showa Denko Kk | ランプおよびランプの製造方法 |
JP2012019062A (ja) * | 2010-07-08 | 2012-01-26 | Shin Etsu Chem Co Ltd | 発光半導体装置、実装基板及びそれらの製造方法 |
JP5563440B2 (ja) | 2010-12-24 | 2014-07-30 | 株式会社朝日ラバー | 樹脂レンズ、レンズ付led装置及びレンズ付led装置の製造方法 |
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2013
- 2013-08-08 DE DE102013215650.2A patent/DE102013215650B4/de active Active
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2014
- 2014-08-05 US US14/909,850 patent/US9564566B2/en active Active
- 2014-08-05 JP JP2016532670A patent/JP6194426B2/ja active Active
- 2014-08-05 CN CN201480044613.3A patent/CN105431952B/zh active Active
- 2014-08-05 WO PCT/EP2014/066852 patent/WO2015018843A1/de active Application Filing
Also Published As
Publication number | Publication date |
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CN105431952B (zh) | 2018-05-18 |
JP2016527729A (ja) | 2016-09-08 |
US9564566B2 (en) | 2017-02-07 |
US20160190410A1 (en) | 2016-06-30 |
CN105431952A (zh) | 2016-03-23 |
DE102013215650A1 (de) | 2015-03-05 |
WO2015018843A1 (de) | 2015-02-12 |
DE102013215650B4 (de) | 2021-10-28 |
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