JP6176584B1 - レジスト剥離液 - Google Patents

レジスト剥離液 Download PDF

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Publication number
JP6176584B1
JP6176584B1 JP2017523003A JP2017523003A JP6176584B1 JP 6176584 B1 JP6176584 B1 JP 6176584B1 JP 2017523003 A JP2017523003 A JP 2017523003A JP 2017523003 A JP2017523003 A JP 2017523003A JP 6176584 B1 JP6176584 B1 JP 6176584B1
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JP
Japan
Prior art keywords
mass
water
hydrazine
resist
stripping solution
Prior art date
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Application number
JP2017523003A
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English (en)
Japanese (ja)
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JPWO2018061065A1 (ja
Inventor
真一郎 淵上
真一郎 淵上
佑典 鬼頭
佑典 鬼頭
靖紀 鈴木
靖紀 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
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Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Application granted granted Critical
Publication of JP6176584B1 publication Critical patent/JP6176584B1/ja
Priority to TW106132228A priority Critical patent/TWI629352B/zh
Publication of JPWO2018061065A1 publication Critical patent/JPWO2018061065A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2017523003A 2016-09-30 2016-09-30 レジスト剥離液 Active JP6176584B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW106132228A TWI629352B (zh) 2016-09-30 2017-09-20 Receptor stripping solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/004437 WO2018061065A1 (ja) 2016-09-30 2016-09-30 レジスト剥離液

Publications (2)

Publication Number Publication Date
JP6176584B1 true JP6176584B1 (ja) 2017-08-09
JPWO2018061065A1 JPWO2018061065A1 (ja) 2018-10-04

Family

ID=59559105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017523003A Active JP6176584B1 (ja) 2016-09-30 2016-09-30 レジスト剥離液

Country Status (4)

Country Link
JP (1) JP6176584B1 (zh)
CN (1) CN107820584B (zh)
TW (1) TWI629352B (zh)
WO (1) WO2018061065A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6692029B1 (ja) * 2019-03-25 2020-05-13 パナソニックＩｐマネジメント株式会社 レジスト剥離液
WO2020194419A1 (ja) * 2019-03-25 2020-10-01 パナソニックＩｐマネジメント株式会社 レジスト剥離液

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04289866A (ja) * 1990-11-05 1992-10-14 Ekc Technol Inc 耐食膜を支持体から除去する組成物とその除去方法
JPH09244263A (ja) * 1996-03-11 1997-09-19 Fuji Hanto Electron Technol Kk フォトレジスト剥離液
JPH1116882A (ja) * 1997-06-19 1999-01-22 Toray Fine Chem Co Ltd フォトレジスト剥離用組成物
JP2002196509A (ja) * 2000-12-25 2002-07-12 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
US20030060382A1 (en) * 2001-09-21 2003-03-27 Hynix Semiconductor Inc. Solution composition for removing a remaining photoresist resin
JP2004502980A (ja) * 2000-07-10 2004-01-29 イーケイシー　テクノロジー　インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
JP2005055701A (ja) * 2003-08-05 2005-03-03 Kao Corp レジスト用剥離剤組成物
WO2010025624A1 (zh) * 2008-09-05 2010-03-11 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
CN101750913A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种去除光阻层残留物的清洗液
CN102012645A (zh) * 2010-12-24 2011-04-13 东莞市智高化学原料有限公司 一种光刻胶剥离液
JP2012500421A (ja) * 2009-08-25 2012-01-05 エルティーシー カンパニー リミテッド Ｌｃｄを製造するためのフォトレジスト剥離組成物
JP2016095413A (ja) * 2014-11-14 2016-05-26 パナソニックＩｐマネジメント株式会社 レジスト剥離液

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3738996B2 (ja) * 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
TWI275903B (en) * 2001-03-13 2007-03-11 Nagase Chemtex Corp A composition for stripping photo resist
KR20070003764A (ko) * 2003-10-29 2007-01-05 나가세케무텍쿠스가부시키가이샤 포토레지스트 박리용 조성물 및 박리방법
JP6277511B2 (ja) * 2013-10-18 2018-02-14 パナソニックＩｐマネジメント株式会社 レジスト剥離液
CN104946429A (zh) * 2014-03-26 2015-09-30 安集微电子科技(上海)有限公司 一种低蚀刻的去除光阻蚀刻残留物的清洗液
JP5885041B1 (ja) * 2014-10-27 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
KR102009545B1 (ko) * 2015-03-05 2019-10-21 동우 화인켐 주식회사 레지스트 박리액 조성물

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04289866A (ja) * 1990-11-05 1992-10-14 Ekc Technol Inc 耐食膜を支持体から除去する組成物とその除去方法
JPH09244263A (ja) * 1996-03-11 1997-09-19 Fuji Hanto Electron Technol Kk フォトレジスト剥離液
JPH1116882A (ja) * 1997-06-19 1999-01-22 Toray Fine Chem Co Ltd フォトレジスト剥離用組成物
JP2004502980A (ja) * 2000-07-10 2004-01-29 イーケイシー　テクノロジー　インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
JP2002196509A (ja) * 2000-12-25 2002-07-12 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
US20030060382A1 (en) * 2001-09-21 2003-03-27 Hynix Semiconductor Inc. Solution composition for removing a remaining photoresist resin
JP2005055701A (ja) * 2003-08-05 2005-03-03 Kao Corp レジスト用剥離剤組成物
WO2010025624A1 (zh) * 2008-09-05 2010-03-11 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
CN101750913A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种去除光阻层残留物的清洗液
JP2012500421A (ja) * 2009-08-25 2012-01-05 エルティーシー カンパニー リミテッド Ｌｃｄを製造するためのフォトレジスト剥離組成物
CN102012645A (zh) * 2010-12-24 2011-04-13 东莞市智高化学原料有限公司 一种光刻胶剥离液
JP2016095413A (ja) * 2014-11-14 2016-05-26 パナソニックＩｐマネジメント株式会社 レジスト剥離液

Also Published As

Publication number Publication date
CN107820584B (zh) 2019-10-18
TW201814035A (zh) 2018-04-16
JPWO2018061065A1 (ja) 2018-10-04
WO2018061065A1 (ja) 2018-04-05
CN107820584A (zh) 2018-03-20
TWI629352B (zh) 2018-07-11

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