JP6144969B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6144969B2 JP6144969B2 JP2013119998A JP2013119998A JP6144969B2 JP 6144969 B2 JP6144969 B2 JP 6144969B2 JP 2013119998 A JP2013119998 A JP 2013119998A JP 2013119998 A JP2013119998 A JP 2013119998A JP 6144969 B2 JP6144969 B2 JP 6144969B2
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- semiconductor chip
- circuit
- electrode
- electrode arrangement
- wiring board
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- 239000004065 semiconductor Substances 0.000 title claims description 287
- 230000015572 biosynthetic process Effects 0.000 claims description 65
- 239000011347 resin Substances 0.000 claims description 46
- 229920005989 resin Polymers 0.000 claims description 46
- 238000007789 sealing Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 238000012986 modification Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 17
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 13
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 13
- 229910004444 SUB1 Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 101100296544 Caenorhabditis elegans pbo-5 gene Proteins 0.000 description 11
- 101001073220 Cucumis sativus Peroxidase 2 Proteins 0.000 description 11
- 108010047230 Member 1 Subfamily B ATP Binding Cassette Transporter Proteins 0.000 description 8
- 229910004438 SUB2 Inorganic materials 0.000 description 8
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 8
- 102100030306 TBC1 domain family member 9 Human genes 0.000 description 8
- 101150018444 sub2 gene Proteins 0.000 description 8
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 102100021895 Bcl-2-like protein 13 Human genes 0.000 description 6
- 101000971074 Homo sapiens Bcl-2-like protein 13 Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 101100296545 Caenorhabditis elegans pbo-6 gene Proteins 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 101100206255 Oryza sativa subsp. japonica TDL1A gene Proteins 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 101100533625 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) drc-4 gene Proteins 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 101150090425 SLD1 gene Proteins 0.000 description 1
- 101150033482 SLD2 gene Proteins 0.000 description 1
- 101100533627 Schizosaccharomyces pombe (strain 972 / ATCC 24843) drc1 gene Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 101150042285 lgc-4 gene Proteins 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/49838—Geometry or layout
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Description
図1は、実施形態に係る半導体装置SDの構成を示す断面図である。図2は、半導体装置SDを構成する配線基板IP、第1半導体チップSC1、及び第2半導体チップSC2の相対位置を説明するための概略図である。図1は、図2のA−A´断面に対応している。実施形態1に係る半導体装置SDは、配線基板IP、第1半導体チップSC1、及び第2半導体チップSC2を備えている。
図9は、変形例1に係る半導体装置SDの構成を示す断面図である。本変形例に係る半導体装置SDは、以下の点を除いて、実施形態に係る半導体装置SDと同様の構成である。
図11は、変形例2に係る半導体装置SDの構成を示す平面図である。本変形例に係る半導体装置SDは、以下の点を除いて、実施形態または変形例1に係る半導体装置SDと同様である。
図12は、変形例3に係る電子装置EDの平面図である。本図に示す電子装置EDは、例えば、携帯通信端末、携帯型のゲーム機器、携帯型のパーソナルコンピュータなど、携帯型の電子機器であり、半導体装置SDを内蔵している。また電子装置EDは、表示装置DISを有している。表示装置DISは、半導体装置SDを用いて制御されている。
CUP 接続端子
CUP1 接続端子
CUP2 接続端子
CUP3 接続端子
DIS 表示装置
ED 電子装置
EL11 電極
EL21 接続端子
IEL 電極
IP 配線基板
LGC1 第1回路形成領域
LGC2 第2回路形成領域
LGC3 回路領域
LGC4 回路領域
LID 放熱部材
LND 電極
MDR1 封止樹脂
MIL1 多層配線層
MIL2 多層配線層
RIF 補強部材
SB 外部接続端子
SC1 第1半導体チップ
SC2 第2半導体チップ
SC21 第2半導体チップ
SD 半導体装置
SFC11 素子形成面
SFC12 裏面SFC
SFC21 素子形成面
SFC22 裏面
SID11 長辺
SID12 短辺
SID13 長辺
SID14 短辺
SL スクライブ領域
SR 絶縁層
SRO 開口
SUB1 基板
SUB2 基板
Tr1 トランジスタ
TSV1 第1貫通電極
TSV2 第2貫通電極
TSVA1 貫通電極配置領域
UFR1 封止樹脂
UFR2 封止樹脂
Claims (7)
- 配線基板と、
前記配線基板の第1面上に、素子形成面が前記第1面に対向する方向で実装されており、第1回路を有する第1半導体チップと、
前記第1半導体チップ上に配置された第2半導体チップと、
前記第1半導体チップと前記配線基板とを接続する複数の接続端子と、
を備え、
前記第1半導体チップは、素子形成面が前記第1面に対向しており、複数の第1貫通電極を有しており、
前記第2半導体チップは、前記第1半導体チップの前記複数の第1貫通電極に電気的に接続しており、
前記複数の第1貫通電極のそれぞれは、m行n列(ただしm>n)の格子点のいずれかの上に配置されており、
前記m行n列の最外周の格子点を結んだ領域である貫通電極配置領域は、平面視において前記第1回路とは重なっておらず、
前記貫通電極配置領域は、平面視において前記複数の接続端子と重なっておらず、
前記複数の接続端子は、複数の第1接続端子を含み、
前記複数の前記第1接続端子の一部は、平面視において前記第1回路と前記貫通電極配置領域の間に位置しており、
前記第1半導体チップ及び前記貫通電極配置領域は、いずれも平面形状が長方形であり、
平面視において、
前記貫通電極配置領域の長辺は、前記第1半導体チップの短辺と平行であり、
前記第1回路は、前記貫通電極配置領域の長辺と前記第1半導体チップの短辺の間に位置しており、
前記貫通電極配置領域に平行な断面で見た場合、前記貫通電極配置領域の中心は、前記第1半導体チップの中心から、前記第1回路とは逆側にずれており、
前記貫通電極配置領域の長辺に平行な方向に前記貫通電極配置領域を延長した領域によって第1半導体チップを分割した場合、
前記複数の接続端子の数は、前記第1回路を含む領域のほうが、他の領域よりも多い半導体装置。 - 請求項1に記載の半導体装置において、
前記断面において、前記第2半導体チップの中心から前記配線基板の中心までの距離は、前記第1半導体チップの中心から前記配線基板の中心までの距離よりも小さい半導体装置。 - 請求項1に記載の半導体装置において、
前記第1半導体チップと前記配線基板の間の空間を封止する第1封止樹脂と、
前記第1半導体チップと前記第2半導体チップの間の空間を封止する第2封止樹脂と、
を備え、
前記第1封止樹脂は、前記第2封止樹脂よりも薄い半導体装置。 - 請求項1に記載の半導体装置において、
前記第1半導体チップは、前記第2半導体チップよりも薄い半導体装置。 - 請求項1に記載の半導体装置において、
前記第1半導体チップ及び前記第2半導体チップは、いずれも平面形状が長方形であり、
前記第2半導体チップの長辺は、平面視で前記第1半導体チップの短辺と平行である半導体装置。 - 請求項1に記載の半導体装置において、
複数の前記第2半導体チップが前記第1半導体チップ上に積層されており、
2層目以上の前記第2半導体チップの少なくとも一つは、最下層の前記第2半導体チップよりも厚い半導体装置。 - 請求項1に記載の半導体装置において、
前記第1半導体チップは、更に平面視において信号を処置する前記第1回路とは重ならない位置にGPU用の第2回路を有し、
前記貫通電極配置領域は、平面視において前記第2回路とは重なっておらず、
前記複数の接続端子は、複数の第2接続端子を含み、
前記複数の前記第2接続端子の一部は、平面視において前記第2回路と前記貫通電極配置領域の間に位置しており、
前記貫通電極配置領域は、平面視において前記第1回路と前記第2回路の間に位置している半導体装置。
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CN201410249835.0A CN104241258B (zh) | 2013-06-06 | 2014-06-06 | 半导体器件 |
HK15105925.2A HK1205355A1 (en) | 2013-06-06 | 2015-06-22 | Semiconductor device |
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