JP6141332B2 - スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法 - Google Patents

スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法 Download PDF

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Publication number: JP6141332B2
Authority: JP; Japan
Prior art keywords: thin film; semiconductor thin; oxide semiconductor; sputtering; manufacturing
Prior art date: 2013-01-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2014557400A

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English (en)

Japanese (ja)

Other versions

JPWO2014112363A1 (ja

Inventor

望但馬

一晃江端

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Idemitsu Kosan Co Ltd

Original Assignee

Idemitsu Kosan Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-01-15

Filing date

2014-01-15

Publication date

2017-06-07

2014-01-15 Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd

2017-01-19 Publication of JPWO2014112363A1 publication Critical patent/JPWO2014112363A1/ja

2017-06-07 Application granted granted Critical

2017-06-07 Publication of JP6141332B2 publication Critical patent/JP6141332B2/ja

Status Expired - Fee Related legal-status Critical Current

2034-01-15 Anticipated expiration legal-status Critical

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239000010409 thin film Substances 0.000 title claims description 159
239000004065 semiconductor Substances 0.000 title claims description 104
238000005477 sputtering target Methods 0.000 title claims description 65
238000004519 manufacturing process Methods 0.000 title claims description 53
239000010408 film Substances 0.000 claims description 91
239000011701 zinc Substances 0.000 claims description 78
238000004544 sputter deposition Methods 0.000 claims description 73
239000011777 magnesium Substances 0.000 claims description 70
239000011135 tin Substances 0.000 claims description 58
239000007789 gas Substances 0.000 claims description 57
238000005530 etching Methods 0.000 claims description 56
MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 39
238000000034 method Methods 0.000 claims description 38
239000000758 substrate Substances 0.000 claims description 32
238000005245 sintering Methods 0.000 claims description 28
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 24
230000015572 biosynthetic process Effects 0.000 claims description 22
239000011029 spinel Substances 0.000 claims description 21
229910052596 spinel Inorganic materials 0.000 claims description 21
150000001875 compounds Chemical class 0.000 claims description 20
229910052738 indium Inorganic materials 0.000 claims description 18
229910052749 magnesium Inorganic materials 0.000 claims description 18
229910052718 tin Inorganic materials 0.000 claims description 18
229910052725 zinc Inorganic materials 0.000 claims description 18
GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
230000036961 partial effect Effects 0.000 claims description 14
235000006408 oxalic acid Nutrition 0.000 claims description 13
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230000001681 protective effect Effects 0.000 claims description 12
230000005669 field effect Effects 0.000 claims description 11
238000010438 heat treatment Methods 0.000 claims description 11
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 10
229910001882 dioxygen Inorganic materials 0.000 claims description 10
238000000059 patterning Methods 0.000 claims description 10
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
239000001272 nitrous oxide Substances 0.000 claims description 8
230000000630 rising effect Effects 0.000 claims description 7
229910004205 SiNX Inorganic materials 0.000 claims description 2
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 43
239000010410 layer Substances 0.000 description 39
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239000013078 crystal Substances 0.000 description 27
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239000011787 zinc oxide Substances 0.000 description 21
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QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
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239000002994 raw material Substances 0.000 description 18
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QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
238000000137 annealing Methods 0.000 description 12
230000000052 comparative effect Effects 0.000 description 12
238000002441 X-ray diffraction Methods 0.000 description 11
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238000002156 mixing Methods 0.000 description 10
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238000009832 plasma treatment Methods 0.000 description 9
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229910003437 indium oxide Inorganic materials 0.000 description 8
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 8
239000000463 material Substances 0.000 description 8
239000000203 mixture Substances 0.000 description 8
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AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
239000002002 slurry Substances 0.000 description 7
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
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229910006404 SnO 2 Inorganic materials 0.000 description 6
238000001035 drying Methods 0.000 description 6
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XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
229910021417 amorphous silicon Inorganic materials 0.000 description 5
229910003460 diamond Inorganic materials 0.000 description 5
239000010432 diamond Substances 0.000 description 5
239000001257 hydrogen Substances 0.000 description 5
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239000000523 sample Substances 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
238000004458 analytical method Methods 0.000 description 4
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CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
-1 Ta 2 O 5 Inorganic materials 0.000 description 3
229910052782 aluminium Inorganic materials 0.000 description 3
125000004429 atom Chemical group 0.000 description 3
239000011324 bead Substances 0.000 description 3
239000011230 binding agent Substances 0.000 description 3
229910052802 copper Inorganic materials 0.000 description 3
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238000010304 firing Methods 0.000 description 3
150000002500 ions Chemical class 0.000 description 3
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229910052750 molybdenum Inorganic materials 0.000 description 3
238000000465 moulding Methods 0.000 description 3
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239000011148 porous material Substances 0.000 description 3
238000010298 pulverizing process Methods 0.000 description 3
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238000000926 separation method Methods 0.000 description 3
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229910052719 titanium Inorganic materials 0.000 description 3
238000004506 ultrasonic cleaning Methods 0.000 description 3
238000001039 wet etching Methods 0.000 description 3
MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
238000007088 Archimedes method Methods 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
241001175904 Labeo bata Species 0.000 description 2
229910018068 Li 2 O Inorganic materials 0.000 description 2
OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
229910002367 SrTiO Inorganic materials 0.000 description 2
229910010413 TiO 2 Inorganic materials 0.000 description 2
GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
239000008186 active pharmaceutical agent Substances 0.000 description 2
239000000654 additive Substances 0.000 description 2
230000000996 additive effect Effects 0.000 description 2
239000003125 aqueous solvent Substances 0.000 description 2
230000008901 benefit Effects 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
229910052804 chromium Inorganic materials 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
239000000470 constituent Substances 0.000 description 2
229910021419 crystalline silicon Inorganic materials 0.000 description 2
238000005520 cutting process Methods 0.000 description 2
238000006297 dehydration reaction Methods 0.000 description 2
238000011161 development Methods 0.000 description 2
238000004090 dissolution Methods 0.000 description 2
238000011156 evaluation Methods 0.000 description 2
230000006870 function Effects 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
239000010439 graphite Substances 0.000 description 2
150000002431 hydrogen Chemical class 0.000 description 2
239000011261 inert gas Substances 0.000 description 2
238000005224 laser annealing Methods 0.000 description 2
238000001755 magnetron sputter deposition Methods 0.000 description 2
239000002923 metal particle Substances 0.000 description 2
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
230000002093 peripheral effect Effects 0.000 description 2
238000012545 processing Methods 0.000 description 2
238000004451 qualitative analysis Methods 0.000 description 2
238000011946 reduction process Methods 0.000 description 2
238000001028 reflection method Methods 0.000 description 2
230000002441 reversible effect Effects 0.000 description 2
238000005070 sampling Methods 0.000 description 2
229910052709 silver Inorganic materials 0.000 description 2
229910052708 sodium Inorganic materials 0.000 description 2
239000006104 solid solution Substances 0.000 description 2
229910052715 tantalum Inorganic materials 0.000 description 2
OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
238000012360 testing method Methods 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
229910017911 MgIn Inorganic materials 0.000 description 1
239000004372 Polyvinyl alcohol Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
150000007513 acids Chemical class 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
229910002065 alloy metal Inorganic materials 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
229910002091 carbon monoxide Inorganic materials 0.000 description 1
150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000018044 dehydration Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
239000000428 dust Substances 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
238000005401 electroluminescence Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
229910001195 gallium oxide Inorganic materials 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000008187 granular material Substances 0.000 description 1
230000005484 gravity Effects 0.000 description 1
230000005283 ground state Effects 0.000 description 1
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230000006872 improvement Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
230000006698 induction Effects 0.000 description 1
238000009616 inductively coupled plasma Methods 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
238000007733 ion plating Methods 0.000 description 1
238000004020 luminiscence type Methods 0.000 description 1
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239000013081 microcrystal Substances 0.000 description 1
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239000006199 nebulizer Substances 0.000 description 1
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238000000206 photolithography Methods 0.000 description 1
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238000002360 preparation method Methods 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
238000001552 radio frequency sputter deposition Methods 0.000 description 1
229910052706 scandium Inorganic materials 0.000 description 1
238000004062 sedimentation Methods 0.000 description 1
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239000007787 solid Substances 0.000 description 1
239000007921 spray Substances 0.000 description 1
238000003892 spreading Methods 0.000 description 1
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239000012086 standard solution Substances 0.000 description 1
238000000427 thin-film deposition Methods 0.000 description 1
GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
230000002463 transducing effect Effects 0.000 description 1
238000012546 transfer Methods 0.000 description 1
230000000007 visual effect Effects 0.000 description 1
238000005406 washing Methods 0.000 description 1

Images

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Physical Vapour Deposition (AREA)
Thin Film Transistor (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Compositions Of Oxide Ceramics (AREA)

JP2014557400A 2013-01-15 2014-01-15 スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法 Expired - Fee Related JP6141332B2 (ja)

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