JP6132319B2 - 結像光学系 - Google Patents
結像光学系 Download PDFInfo
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- JP6132319B2 JP6132319B2 JP2015108112A JP2015108112A JP6132319B2 JP 6132319 B2 JP6132319 B2 JP 6132319B2 JP 2015108112 A JP2015108112 A JP 2015108112A JP 2015108112 A JP2015108112 A JP 2015108112A JP 6132319 B2 JP6132319 B2 JP 6132319B2
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- optical system
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- imaging
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- mirror
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- 238000003384 imaging method Methods 0.000 title claims description 160
- 238000005286 illumination Methods 0.000 claims description 161
- 230000003287 optical effect Effects 0.000 claims description 139
- 230000008878 coupling Effects 0.000 claims description 23
- 238000010168 coupling process Methods 0.000 claims description 23
- 238000005859 coupling reaction Methods 0.000 claims description 23
- 230000004907 flux Effects 0.000 claims description 17
- 238000013461 design Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 238000007689 inspection Methods 0.000 description 14
- 210000001747 pupil Anatomy 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 230000008901 benefit Effects 0.000 description 10
- 238000012937 correction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000005405 multipole Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- -1 scratches Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0652—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
P(M)=D(SA)/(D(SA)+D(CR))≦0.9
P(M)=D(SA)/(D(SA)+D(CR))
このパラメータは、0.9よりも大きくない値を有する。
P(M)≦0.9
Claims (8)
- 193nmよりも短い波長を有する照明光(3)の光束の放射線源(2)から該照明光(3)に対して反射性である物体平面(5)の物体視野(4)内の物体(12)へのビームスプリッタを用いない誘導のためのリソグラフィ投影露光のための照明光学系(7;28)であって、
前記物体視野(4)の前の照明ビーム経路内の照明光学系の最後のミラー(38)が、貫通開口部(40)を含み、
物体視野(4)の少なくとも1つの点に対して、照明光(3)の光束が、物体平面(5)に対する法線(14)との3°よりも小さい角度をなす該物体視野(4)上へのエネルギ重み付き光線入射方向(13)を有するような設計、
を特徴とする照明光学系(7;28)。 - 前記照明光(3)の前記光束は、前記物体視野(4)上への10°よりも小さい最大入射角を有することを特徴とする請求項1に記載の照明光学系。
- 請求項1又は請求項2に記載の照明光学系(7;28)と、
前記照明及び結像光(3)を生成するための光源(2)と、
を含むことを特徴とする照明システム。 - 物体平面(5)の物体視野(4)内の反射物体(12)の像平面(18)の像視野(17)内へのビームスプリッタを用いない結像のための、193nmよりも短い波長を有する結像光(3)の光束を複数のミラー(M1からM6)を用いて誘導するための結像光学系(16;31;37)と、
請求項1又は請求項2に記載の照明光学系(7;28)と、
を含むことを特徴とする光学系。 - 貫通開口部(22)を通じて前記結像光学系(16;31;37)のミラーのうちの1つ(M2)の中に前記照明光(3)を結合する前記照明光学系(7;28)の結合ミラー(11)を特徴とする請求項4に記載の光学系。
- 前記結像光学系の結像ビーム経路内で前記結像光(3’)が通過する貫通開口部(40)を含む前記照明光学系(7;28)の結合ミラー(38)を特徴とする請求項4に記載の光学系。
- 請求項4から請求項6のいずれか1項に記載の光学系と、
前記照明及び結像光(3)を生成するための光源(2)と、
を含むことを特徴とする投影露光装置(1)。 - 構造化構成要素の製作の方法であって、
レチクル(12)及びウェーハ(19)を準備する段階と、
請求項7に記載の投影露光装置(1)を用いて、前記レチクル(12)上の構造を前記ウェーハ(19)の感光層上に投影する段階と、
前記ウェーハ(19)上に微細構造又はナノ構造を生成する段階と、
を含むことを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28606609P | 2009-12-14 | 2009-12-14 | |
US61/286,066 | 2009-12-14 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012543592A Division JP5756121B2 (ja) | 2009-12-14 | 2010-12-03 | 結像光学系 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015158694A JP2015158694A (ja) | 2015-09-03 |
JP6132319B2 true JP6132319B2 (ja) | 2017-05-24 |
Family
ID=43760101
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012543592A Active JP5756121B2 (ja) | 2009-12-14 | 2010-12-03 | 結像光学系 |
JP2015108112A Active JP6132319B2 (ja) | 2009-12-14 | 2015-05-28 | 結像光学系 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012543592A Active JP5756121B2 (ja) | 2009-12-14 | 2010-12-03 | 結像光学系 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120274917A1 (ja) |
EP (1) | EP2513697B1 (ja) |
JP (2) | JP5756121B2 (ja) |
CN (2) | CN102754009B (ja) |
WO (1) | WO2011073039A2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010041623A1 (de) | 2010-09-29 | 2012-03-29 | Carl Zeiss Smt Gmbh | Spiegel |
KR102330570B1 (ko) | 2012-02-06 | 2021-11-25 | 가부시키가이샤 니콘 | 반사 결상 광학계, 노광 장치, 및 디바이스 제조 방법 |
DE102012209412A1 (de) * | 2012-06-04 | 2013-12-05 | Carl Zeiss Smt Gmbh | Optisches Verfahren und optische Messvorrichtung zum Messen von Winkellagen von Facetten zumindest eines Facettenspiegels für EUV-Anwendungen |
US9442387B2 (en) * | 2013-02-01 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process |
DE102013223935A1 (de) * | 2013-11-22 | 2015-05-28 | Carl Zeiss Smt Gmbh | Beleuchtungssystem für die EUV-Belichtungslithographie |
DE102014223811B4 (de) | 2014-11-21 | 2016-09-29 | Carl Zeiss Smt Gmbh | Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils |
US10890849B2 (en) | 2016-05-19 | 2021-01-12 | Nikon Corporation | EUV lithography system for dense line patterning |
WO2018194975A2 (en) * | 2017-04-19 | 2018-10-25 | Nikon Corporation | Figoptical objective for operation in euv spectral region |
TWI825014B (zh) * | 2017-04-19 | 2023-12-11 | 日商尼康股份有限公司 | 在euv光譜區域中操作光學物鏡 |
US11934105B2 (en) | 2017-04-19 | 2024-03-19 | Nikon Corporation | Optical objective for operation in EUV spectral region |
WO2018200536A2 (en) * | 2017-04-26 | 2018-11-01 | Nikon Corporation | Illumination system with flat 1d-patterned mask for use in euv-exposure tool |
US11054745B2 (en) | 2017-04-26 | 2021-07-06 | Nikon Corporation | Illumination system with flat 1D-patterned mask for use in EUV-exposure tool |
US11300884B2 (en) | 2017-05-11 | 2022-04-12 | Nikon Corporation | Illumination system with curved 1d-patterned mask for use in EUV-exposure tool |
CN109521652B (zh) * | 2018-12-11 | 2020-04-10 | 中国科学院光电技术研究所 | 一种基于棱台分光的超分辨光刻装置 |
EP4152266A1 (en) * | 2021-09-16 | 2023-03-22 | Koninklijke Philips N.V. | Dark-field and phase-contrast tomography reconstruction algorithm |
Family Cites Families (18)
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US5220590A (en) * | 1992-05-05 | 1993-06-15 | General Signal Corporation | X-ray projection lithography camera |
US6199991B1 (en) * | 1997-11-13 | 2001-03-13 | U.S. Philips Corporation | Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system |
JPH11238666A (ja) * | 1998-02-19 | 1999-08-31 | Nikon Corp | X線投影露光装置 |
JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
AU2549899A (en) * | 1998-03-02 | 1999-09-20 | Nikon Corporation | Method and apparatus for exposure, method of manufacture of exposure tool, device, and method of manufacture of device |
EP1772775B1 (de) | 1999-02-15 | 2008-11-05 | Carl Zeiss SMT AG | Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
US6985210B2 (en) * | 1999-02-15 | 2006-01-10 | Carl Zeiss Smt Ag | Projection system for EUV lithography |
DE19910724A1 (de) * | 1999-03-11 | 2000-09-14 | Zeiss Carl Fa | Mikrolithographie-Projektionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
JP2000286189A (ja) * | 1999-03-31 | 2000-10-13 | Nikon Corp | 露光装置および露光方法ならびにデバイス製造方法 |
DE10005189A1 (de) * | 2000-02-05 | 2001-08-09 | Zeiss Carl | Projektionsbelichtungsanlage mit reflektivem Retikel |
DE10139177A1 (de) | 2001-08-16 | 2003-02-27 | Zeiss Carl | Objektiv mit Pupillenobskuration |
JP2003233001A (ja) | 2002-02-07 | 2003-08-22 | Canon Inc | 反射型投影光学系、露光装置及びデバイス製造方法 |
JP2004029625A (ja) * | 2002-06-28 | 2004-01-29 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
JP2005276932A (ja) * | 2004-03-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
EP1950594A1 (de) | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
EP2191332B1 (en) | 2007-08-20 | 2013-05-29 | Carl Zeiss SMT GmbH | Projection objective having mirror elements with reflective coatings |
US20090073392A1 (en) | 2007-09-14 | 2009-03-19 | Carl Zeiss Smt Ag | Illumination System Including Grazing Incidence Mirror For Microlithography Exposure System |
KR101592136B1 (ko) * | 2007-10-26 | 2016-02-04 | 칼 짜이스 에스엠티 게엠베하 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 |
-
2010
- 2010-12-03 EP EP10792877.2A patent/EP2513697B1/en active Active
- 2010-12-03 JP JP2012543592A patent/JP5756121B2/ja active Active
- 2010-12-03 WO PCT/EP2010/068782 patent/WO2011073039A2/en active Application Filing
- 2010-12-03 CN CN201080063805.0A patent/CN102754009B/zh active Active
- 2010-12-03 CN CN201610034283.0A patent/CN105511065B/zh active Active
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2012
- 2012-05-29 US US13/482,794 patent/US20120274917A1/en not_active Abandoned
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2015
- 2015-05-28 JP JP2015108112A patent/JP6132319B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN102754009B (zh) | 2016-02-17 |
JP5756121B2 (ja) | 2015-07-29 |
JP2013513957A (ja) | 2013-04-22 |
US20120274917A1 (en) | 2012-11-01 |
EP2513697A2 (en) | 2012-10-24 |
CN102754009A (zh) | 2012-10-24 |
EP2513697B1 (en) | 2019-08-07 |
WO2011073039A3 (en) | 2011-09-29 |
CN105511065B (zh) | 2019-04-23 |
JP2015158694A (ja) | 2015-09-03 |
WO2011073039A2 (en) | 2011-06-23 |
CN105511065A (zh) | 2016-04-20 |
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