JP5643755B2 - 結像光学系 - Google Patents
結像光学系 Download PDFInfo
- Publication number
- JP5643755B2 JP5643755B2 JP2011517767A JP2011517767A JP5643755B2 JP 5643755 B2 JP5643755 B2 JP 5643755B2 JP 2011517767 A JP2011517767 A JP 2011517767A JP 2011517767 A JP2011517767 A JP 2011517767A JP 5643755 B2 JP5643755 B2 JP 5643755B2
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- JP
- Japan
- Prior art keywords
- optical system
- image
- imaging
- plane
- imaging optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Lenses (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
5 物体平面
7 結像光学系
9 像平面
18,19 貫通開口部
M1からM6 ミラー
Claims (13)
- 物体平面(5)の物体視野(4)を像平面(9)の像視野(8)内に結像する複数のミラー(M1〜M6)を含み、該ミラーの少なくとも1つ(M5,M6)が結像光(3)の通過のための貫通開口部(18,19)を有する結像光学系(7)であって、
物体平面(5)の前5m〜2000mの範囲の結像光(3)のビーム経路に位置する入射瞳平面を有する、
前記結像光学系(7)は、100mmよりも大きい物体−像オフセットを有する、
ことを特徴とする結像光学系(7)。 - 0.4〜0.9の範囲の像側開口数を特徴とする請求項1に記載の結像光学系。
- 物体平面(5)の物体視野(4)を像平面(9)の像視野(8)内に結像する複数のミラー(M1〜M6)を含み、該ミラーの少なくとも1つ(M5,M6)が結像光(3)の通過のための貫通開口部(18,19)を有する結像光学系(21)であって、
物体平面(5)の前100mm〜5000mmの範囲の結像光(3)のビーム経路に位置する入射瞳平面(26)を有し、ミラー(M1〜M6)のうちの少なくとも1つの反射面が、自由曲面とし具現化される、
前記結像光学系(7)は、100mmよりも大きい物体−像オフセットを有する、
ことを特徴とする結像光学系(21)。 - 0.4〜0.9の範囲の像側開口数を特徴とする請求項3に記載の結像光学系。
- 0.7の像側開口数を特徴とする請求項4に記載の結像光学系。
- 前記像平面(9)は、前記物体平面(4)に対して平行に配置されることを特徴とする請求項1から請求項5のいずれか1項に記載の結像光学系。
- 正確に6つのミラー(M1〜M6)を特徴とする請求項1から請求項6のいずれか1項に記載の結像光学系。
- 1mm2よりも大きい像視野(8)を特徴とする請求項1から請求項7のいずれか1項に記載の結像光学系。
- 像側でテレセントリックであることを特徴とする請求項1から請求項8のいずれか1項に記載の結像光学系。
- 請求項1から請求項9のいずれか1項に記載の結像光学系と、
照明光(3)を前記結像光学系(7;21)の物体視野(4)に向けて誘導するための照明光学系(6)と、
を含むことを特徴とする光学系。 - マイクロリソグラフィのための投影露光装置であって、
請求項10に記載の光学系を含み、かつ
照明及び結像光(3)のための光源(2)を含む、
ことを特徴とする投影露光装置。 - 照明光学系(6)の瞳ファセットミラー(25)が、結像光学系(21)の入射瞳平面(26)に配置されることを特徴とする請求項11に記載の投影露光装置。
- 微細構造構成要素を生成する方法であって、
レチクル(10)及びウェーハ(11)を準備する段階と、
請求項11又は請求項12に記載の投影露光装置の補助により前記レチクル(10)上の構造を前記ウェーハ(11)の感光層上に投影する段階と、
前記ウェーハ(11)上に微細構造を生成する段階と、
を含むことを特徴とする方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8114708P | 2008-07-16 | 2008-07-16 | |
DE102008033340A DE102008033340B3 (de) | 2008-07-16 | 2008-07-16 | Abbildende Optik |
DE102008033340.9 | 2008-07-16 | ||
US61/081,147 | 2008-07-16 | ||
PCT/EP2009/004429 WO2010006678A1 (en) | 2008-07-16 | 2009-06-18 | Imaging optics |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011528128A JP2011528128A (ja) | 2011-11-10 |
JP5643755B2 true JP5643755B2 (ja) | 2014-12-17 |
Family
ID=41110730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011517767A Expired - Fee Related JP5643755B2 (ja) | 2008-07-16 | 2009-06-18 | 結像光学系 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9442386B2 (ja) |
EP (1) | EP2297612B1 (ja) |
JP (1) | JP5643755B2 (ja) |
KR (1) | KR101646285B1 (ja) |
CN (1) | CN102099742B (ja) |
DE (1) | DE102008033340B3 (ja) |
WO (1) | WO2010006678A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011005144A1 (de) * | 2010-03-17 | 2011-09-22 | Carl Zeiss Smt Gmbh | Reflektives optisches Element, Projektionssystem und Projektionsbelichtungsanlage |
WO2011131289A1 (en) | 2010-04-22 | 2011-10-27 | Carl Zeiss Smt Gmbh | Imaging optics, and a projection exposure apparatus for microlithography having such an imaging optics |
JP5946190B2 (ja) | 2010-07-30 | 2016-07-05 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系及びこの種の結像光学系を有するマイクロリソグラフィのための投影露光装置 |
WO2013118615A1 (ja) | 2012-02-06 | 2013-08-15 | 株式会社ニコン | 反射結像光学系、露光装置、およびデバイス製造方法 |
WO2014019617A1 (en) * | 2012-08-01 | 2014-02-06 | Carl Zeiss Smt Gmbh | Imaging optical unit for a projection exposure apparatus |
US9958787B2 (en) | 2012-09-21 | 2018-05-01 | Asml Netherlands B.V. | Lithographic method and apparatus |
DE102014221175A1 (de) * | 2014-10-17 | 2016-04-21 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für ein Projektionsbelichtungssystem |
DE102016222033A1 (de) | 2016-11-10 | 2016-12-29 | Carl Zeiss Smt Gmbh | Verfahren zur Zuordnung von Feldfacetten zu Pupillenfacetten zur Schaffung von Beleuchtungslicht-Ausleuchtungskanälen in einem Be-leuchtungssystem in einer EUV-Projektionsbelichtungsanlage |
DE102017215544A1 (de) * | 2017-09-05 | 2017-10-19 | Carl Zeiss Smt Gmbh | Optisches system, optische anordnung und lithographieanlage |
WO2019218698A1 (zh) * | 2018-05-15 | 2019-11-21 | Xiong Xiangwen | 3D立体照射掩膜版(Mask)的极紫外光刻(EUVL)的高产量(HVM)曝光技术及***装置 |
CN109283671B (zh) * | 2018-11-09 | 2020-01-07 | 中国科学院长春光学精密机械与物理研究所 | 一种轻小型大视场低畸变的类同轴五反光学*** |
DE102019208961A1 (de) | 2019-06-19 | 2020-12-24 | Carl Zeiss Smt Gmbh | Projektionsoptik und Projektionsbelichtungsanlage mit einer solchen Projektionsoptik |
DE102022209908A1 (de) | 2022-09-21 | 2024-03-21 | Carl Zeiss Smt Gmbh | Facettenspiegel, Beleuchtungsoptik, Anordnung eines Facettenspiegels, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines nanostrukturierten Bauelements |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0237041B1 (en) * | 1986-03-12 | 1993-08-18 | Matsushita Electric Industrial Co., Ltd. | Projection optical system for use in precise copy |
US7186983B2 (en) * | 1998-05-05 | 2007-03-06 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
US6213610B1 (en) | 1998-09-21 | 2001-04-10 | Nikon Corporation | Catoptric reduction projection optical system and exposure apparatus and method using same |
JP2001185480A (ja) * | 1999-10-15 | 2001-07-06 | Nikon Corp | 投影光学系及び該光学系を備える投影露光装置 |
EP1093021A3 (en) * | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projection optical system as well as equipment and methods making use of said system |
US7089054B2 (en) * | 2002-10-02 | 2006-08-08 | Standen Ltd. | Apparatus and method for treating a tumor or the like |
WO2003042743A1 (fr) | 2001-11-13 | 2003-05-22 | Matsushita Electric Industrial Co., Ltd. | Systeme optique d'imagerie a grand angle, dispositif d'imagerie a grand angle, dispositif d'imagerie de surveillance, dispositif d'imagerie a bord d'un vehicule et dispositif de projection equipe du systeme optique d'imagerie a grand angle |
JP2003233005A (ja) * | 2002-02-07 | 2003-08-22 | Canon Inc | 反射型投影光学系、露光装置及びデバイス製造方法 |
JP2004031808A (ja) * | 2002-06-27 | 2004-01-29 | Nikon Corp | 露光装置の投影光学系、該投影光学系を備えた露光装置及び該露光装置を用いた露光方法 |
JP2004252358A (ja) | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系及び露光装置 |
WO2006046507A1 (ja) | 2004-10-26 | 2006-05-04 | Nikon Corporation | 光学装置、鏡筒、露光装置、及びデバイスの製造方法 |
CN100582861C (zh) * | 2004-12-23 | 2010-01-20 | 卡尔蔡司Smt股份公司 | 具有暗化光瞳的大孔径物镜 |
DE102005042005A1 (de) * | 2004-12-23 | 2006-07-06 | Carl Zeiss Smt Ag | Hochaperturiges Objektiv mit obskurierter Pupille |
KR100604942B1 (ko) | 2005-06-18 | 2006-07-31 | 삼성전자주식회사 | 비축상(off-axis) 프로젝션 광학계 및 이를 적용한극자외선 리소그래피 장치 |
TWI451125B (zh) * | 2005-09-13 | 2014-09-01 | Zeiss Carl Smt Gmbh | 顯微蝕刻投影光學系統、包含此一光學系統之顯微蝕刻工具、使用此一顯微蝕刻工具於顯微蝕刻生產微結構元件之方法、藉此一方法所生產之微結構元件以及於此一光學系統中設計一光學表面的方法 |
DE102006014380A1 (de) * | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
WO2007115597A1 (en) | 2006-04-07 | 2007-10-18 | Carl Zeiss Smt Ag | Microlithography projection optical system, tool and method of production |
US20080118849A1 (en) * | 2006-11-21 | 2008-05-22 | Manish Chandhok | Reflective optical system for a photolithography scanner field projector |
EP1950594A1 (de) * | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
-
2008
- 2008-07-16 DE DE102008033340A patent/DE102008033340B3/de not_active Expired - Fee Related
-
2009
- 2009-06-18 WO PCT/EP2009/004429 patent/WO2010006678A1/en active Application Filing
- 2009-06-18 CN CN200980127410XA patent/CN102099742B/zh active Active
- 2009-06-18 JP JP2011517767A patent/JP5643755B2/ja not_active Expired - Fee Related
- 2009-06-18 EP EP09776780A patent/EP2297612B1/en not_active Not-in-force
- 2009-06-18 KR KR1020117001068A patent/KR101646285B1/ko active IP Right Grant
-
2011
- 2011-01-13 US US13/006,025 patent/US9442386B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2297612A1 (en) | 2011-03-23 |
WO2010006678A1 (en) | 2010-01-21 |
JP2011528128A (ja) | 2011-11-10 |
CN102099742A (zh) | 2011-06-15 |
KR101646285B1 (ko) | 2016-08-05 |
KR20110039439A (ko) | 2011-04-18 |
DE102008033340B3 (de) | 2010-04-08 |
US20110122384A1 (en) | 2011-05-26 |
CN102099742B (zh) | 2013-09-25 |
EP2297612B1 (en) | 2013-01-23 |
US9442386B2 (en) | 2016-09-13 |
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