JP6068175B2 - 配線基板、発光装置、配線基板の製造方法及び発光装置の製造方法 - Google Patents
配線基板、発光装置、配線基板の製造方法及び発光装置の製造方法 Download PDFInfo
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- JP6068175B2 JP6068175B2 JP2013024706A JP2013024706A JP6068175B2 JP 6068175 B2 JP6068175 B2 JP 6068175B2 JP 2013024706 A JP2013024706 A JP 2013024706A JP 2013024706 A JP2013024706 A JP 2013024706A JP 6068175 B2 JP6068175 B2 JP 6068175B2
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- insulating layer
- layer
- wiring
- light emitting
- wiring pattern
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Classifications
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H05K3/24—Reinforcing the conductive pattern
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- H01L2224/45099—Material
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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Description
以下、第1実施形態を図1〜図7に従って説明する。
図1(a)に示すように、リードフレーム21は、平面視略矩形状の基板フレーム22を有している。基板フレーム22の材料としては、例えば銅(Cu)、Cuをベースにした合金、鉄−ニッケル(Fe−Ni)又はFe−Niをベースにした合金等を用いることができる。基板フレーム22の厚さは、例えば50〜250μm程度とすることができる。
図4に示すように、発光装置80は、上記配線基板24と、その配線基板24に実装された一つ又は複数の発光素子81と、ボンディングワイヤ83と、発光素子81及びボンディングワイヤ83等を封止する封止樹脂84と、外部接続用ワイヤ85とを有している。
まず、図5(a)に示すように、基板フレーム22の母材となる導電性基板90を準備する。この導電性基板90の材料としては、例えばCu、Cuをベースにした合金、Fe−Ni又はFe−Niをベースにした合金からなる金属板を用いることができる。この導電性基板90の厚さは、例えば50〜250μm程度とすることができる。
続いて、図5(d)に示す工程(第1工程)では、導電性基板90の上面90Aにテープ92を接着する。具体的には、片面に粘着剤92Bが塗布されたフィルム状のテープ基材92Aの粘着剤92Bが塗布されている側の面92Cを導電性基板90の上面90Aに貼り付ける。例えば導電性基板90の上面90Aにシート状のテープ92を熱圧着によりラミネートする。このとき、導電性基板90の上面90Aとめっき層40の上面42Aとが略面一に形成されているため、テープ92の粘着剤92Bを薄く形成することができる。粘着剤92Bの厚さは、例えば1〜5μm程度とすることができる。すなわち、粘着剤92Bが接する面(導電性基板90の上面90A及びめっき層40の上面42A)が凹凸の小さい平坦面であるため、粘着剤92Bを薄く形成した場合であっても、上記凹凸に起因してテープ92と導電性基板90との間の接着力及び密着力が低下するといった問題の発生を抑制することができる。
次いで、図6(c)に示す工程では、図6(b)に示したテープ92を剥離して除去して、加熱硬化する。但し、この段階では、配線30の上面側に、剥離したテープ92の粘着剤92B(図6(b)参照)の一部が残存している可能性がある。そこで、その残存している可能性のある粘着剤92Bを、例えばアッシング(酸素プラズマを用いたドライエッチング)やブラストで除去するようにしてもよい。このようにテープ92が除去されると、上述のように平坦に形成された配線30の上面及び絶縁層50の上面が露出する。
上記絶縁層70の形成によって、配線30に形成された2つのめっき層40のうち内側のめっき層40が接続パッドP1として開口部70Xから露出され、上記2つのめっき層40のうち外側のめっき層40が電極端子P2として開口部70Yから露出される。このため、絶縁層70の形成後に、コンタクト性を向上させるために配線30上に電解めっき等を施す必要がない。これにより、無電解めっきや電解めっきを行う際に絶縁層70がめっき槽のめっき液中に浸漬されることがないため、絶縁層70にめっき液が染み込むことを未然に防止することができる。この結果、絶縁層70の反射率が低下することを抑制することができる。さらに、上記無電解めっきや電解めっき等に使用されるめっき液の劣化を抑制することができる。詳述すると、絶縁層70を形成した後に、開口部70X,70Yから露出された配線30に対してめっき法(電解めっき法又は無電解めっき法)を施す場合には、そのときに使用されるめっき液に対して絶縁層70に含まれる樹脂材等が溶出する。このため、めっき液の劣化とそれによる液寿命の短縮化を引き起こすという問題がある。これに対し、本実施形態の製造方法によれば、電解めっき法を実施する際には、絶縁層70が形成されていないため、上述したような問題の発生を未然に防止することができる。すなわち、本実施形態の製造方法によれば、めっき液の劣化を抑制することができるため、めっき液の液寿命の短縮化を抑制することができる。
次に、図7(b)に示す工程では、各単位リードフレーム24に1又は複数の発光素子81をワイヤボンディング実装する。詳述すると、まず、各単位リードフレーム24の発光素子搭載領域に形成された絶縁層71上に接着剤82を介して発光素子81を搭載する。続いて、発光素子81の電極(図示略)と、絶縁層70の開口部70Xから露出されためっき層40(つまり、接続パッドP1)とをボンディングワイヤ83により接続し、発光素子81と配線32とを電気的に接続する。具体的には、発光素子81の一方の電極を一方の接続パッドP1とボンディングワイヤ83により電気的に接続するとともに、発光素子81の他方の電極を他方の接続パッドP1とボンディングワイヤ83により電気的に接続する。
(1)配線基板24の最表層に、耐熱性及び耐光性に優れたシリコーンを含む絶縁層70を形成するようにした。これにより、配線基板24の最表層に、エポキシ系樹脂からなる絶縁層を形成する場合に比べて、耐熱性を向上させることができる。このため、実装部品(ここでは、発光素子81)の発熱温度が高くなった場合にも、上記シリコーンを含む絶縁層70を配線基板24の最表層の絶縁層に適用することができる。
(6)発光素子81が搭載される絶縁層71の直下に配線31を形成するようにした。これにより、発光素子81から発生した熱を絶縁層71から配線31及び絶縁層50を通じて放熱板60に放熱することができる。ここで、配線31は絶縁層50よりも高い熱伝導率を有しているため、発光素子81から発生した熱を、絶縁層50上に絶縁層71が形成される場合よりも効率良く放熱板60に放熱することができる。これにより、発光素子81の発光効率の低下を好適に抑制することができる。
なお、上記第1実施形態は、これを適宜変更した以下の態様にて実施することもできる。
以下、第2実施形態を図10〜図15に従って説明する。先の図1〜図9に示した部材と同一の部材にはそれぞれ同一の符号を付して示し、それら各要素についての詳細な説明は省略する。
まず、配線基板110を製造するためには、例えば多数個取り基板(以下、単に「基板」ともいう。)120Aを用意する。基板120Aは、図示は省略するが、配線基板110が形成される領域である配線基板形成領域がマトリクス状(例えば、3×3)に形成された区画を複数(例えば、3つ)有している。この基板120Aは、配線基板形成領域に配線基板110に対応する構造体が形成された後、切断線D1に沿ってダイシングブレード等によって切断される。これにより、配線基板110に対応する構造体が個片化され、複数の配線基板110が製造されることになる。このとき、各配線基板110において、基板120Aは図10に示した放熱板120となる。このため、基板120Aの材料としては、放熱板120と同様に、例えば銅、アルミニウムや鉄などの熱伝導性に優れた金属を用いることができる。なお、以下に示す図13〜図15においては、説明の便宜上、一つの配線基板形成領域の構造を示している。
(実験結果)
ここで、上述したように、酸化活性種による表面処理によってめっき層上のシリコーン膜がシリカ膜に変質すること、及び、そのようにシリコーン膜をシリカ膜に変質させることでワイヤボンディング性が向上することを裏付ける実験結果について、図16及び図17に従って説明する。
なお、上記各実施形態は、これを適宜変更した以下の態様にて実施することもできる。
・上記第2実施形態では、配線基板110を個片化した後に、その配線基板110に発光素子81をワイヤボンディング実装するようにした。これに限らず、例えば配線基板110の個片化前に各発光素子搭載領域CAに発光素子81をワイヤボンディング実装し、その後、切断線D1に沿って切断して個々の発光装置を得るようにしてもよい。
・上記第1実施形態における配線31,32、凹部32Xやめっき層40の平面形状は、矩形状に限らず、例えば三角形や五角形以上の多角形状であってもよく、円形状であってもよい。
・上記第2実施形態における絶縁層160の開口部160X,160Yの平面形状は、円形状に限らず、例えば矩形状や五角形状などの多角形状、半円状、楕円状や半楕円状であってもよい。
24 単位リードフレーム(配線基板)
31 配線(第2配線パターン)
32 配線(第1配線パターン)
32X 凹部(第2凹部)
40 めっき層
41 Ni層
42 Au層
50 絶縁層(第1絶縁層)
50X 凹部(第1凹部)
60 放熱板
70 絶縁層(第2絶縁層)
70X 開口部
71X 凹部(第3凹部)
80,100 発光装置
81 発光素子
83 ボンディングワイヤ
110 配線基板
130 絶縁層(第1絶縁層)
140 配線パターン(第1配線パターン)
150 めっき層
160 絶縁層(第2絶縁層)
160X 開口部
S1 シリカ膜
P1,P11 接続パッド
Claims (11)
- 第1絶縁層と、
前記第1絶縁層の上面に互いに離間して形成された複数の第1凹部と、
前記第1凹部の底面上に形成され、互いに離間して形成された複数の配線パターンと、
前記配線パターンの第1面上に形成されためっき層と、
前記めっき層の少なくとも一部を接続パッドとして露出する開口部を有し、シリコーンを含む第2絶縁層と、を有し、
前記第1絶縁層の上面と前記配線パターンの上面とは面一であり、
前記めっき層の最表面には、シリカ膜が一部に形成されていることを特徴とする配線基板。 - 前記めっき層は、X線源としてAlKα(モノクロメータ)を用い、光電子取り出し角度を45度とし、測定領域を直径約100μmの領域とし、帯電中和機構を使用する条件で前記めっき層の最表面をESCA分析したときに、シリコーンが検出されないことを特徴とする請求項1に記載の配線基板。
- 前記配線パターンの上面には第2凹部が形成され、
前記めっき層は、前記第2凹部の底面上に形成され、
前記配線パターンの上面と前記めっき層の上面とは面一であることを特徴とする請求項1又は2に記載の配線基板。 - 前記第2絶縁層は、波長が450〜700nmの間で50%以上の反射率を有することを特徴とする請求項1〜3のいずれか1つに記載の配線基板。
- 請求項1〜4のいずれか1つに記載の配線基板と、
前記配線基板上に搭載され、前記めっき層とボンディングワイヤを介して電気的に接続された発光素子と、
を有することを特徴とする発光装置。 - 前記配線パターンを第1配線パターンとしたときに、前記第1凹部の底面上に前記第1配線パターンと離間して形成された第2配線パターンを有し、
前記発光素子は、前記第2配線パターンの上面を被覆するように形成された前記第2絶縁層上に搭載されていることを特徴とする請求項5に記載の発光装置。 - 前記発光素子が搭載される前記第2絶縁層の上面には第3凹部が形成され、
前記発光素子は、前記第3凹部の底面上に搭載されていることを特徴とする請求項5又は6に記載の発光装置。 - 前記配線パターンを第1配線パターンとしたときに、前記第1凹部の底面上に前記第1配線パターンと離間して形成された第2配線パターンを有し、
前記発光素子は、前記第2配線パターンの上面に形成されためっき層上に搭載されていることを特徴とする請求項7に記載の発光装置。 - 第1絶縁層と、前記第1絶縁層の上面に互いに離間して形成された複数の第1凹部と、前記第1凹部の底面上に形成され、互いに離間して形成された複数の配線パターンと、前記配線パターンの第1面上に形成されためっき層と、を有する配線基板の製造方法であって、
電解めっき法により、前記めっき層を形成する工程と、
前記配線パターンの上面と上面が面一になるように前記第1絶縁層を形成する工程と、
前記第1絶縁層上及び前記配線パターン上に、前記めっき層の少なくとも一部を接続パッドとして露出する開口部を有し、シリコーンを含む第2絶縁層を形成する工程と、
前記めっき層の最表面に酸素活性種を付着させる工程と、
を有することを特徴とする配線基板の製造方法。 - 前記酸素活性種は、紫外線光照射により生成された酸素活性種、又は酸素をソースとしたプラズマにより生成された酸素活性種であることを特徴とする請求項9に記載の配線基板の製造方法。
- 第1絶縁層と、前記第1絶縁層の上面に互いに離間して形成された複数の第1凹部と、前記第1凹部の底面上に形成され、互いに離間して形成された複数の配線パターンと、前記配線パターンの第1面上に形成されためっき層とを有する配線基板に発光素子が実装されてなる発光装置の製造方法であって、
電解めっき法により、前記めっき層を形成する工程と、
前記配線パターンの上面と上面が面一になるように前記第1絶縁層を形成する工程と、
前記第1絶縁層上及び前記配線パターン上に、前記めっき層の少なくとも一部を接続パッドとして露出する開口部を有し、シリコーンを含む第2絶縁層を形成する工程と、
前記めっき層の最表面に酸素活性種を付着させる工程と、
前記シリコーンを除去する工程の後に、前記配線基板に発光素子を搭載する工程と、
前記発光素子と前記めっき層とをボンディングワイヤで電気的に接続する工程と、
を有することを特徴とする発光装置の製造方法。
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