JP6026009B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP6026009B2 JP6026009B2 JP2015546166A JP2015546166A JP6026009B2 JP 6026009 B2 JP6026009 B2 JP 6026009B2 JP 2015546166 A JP2015546166 A JP 2015546166A JP 2015546166 A JP2015546166 A JP 2015546166A JP 6026009 B2 JP6026009 B2 JP 6026009B2
- Authority
- JP
- Japan
- Prior art keywords
- common connection
- semiconductor module
- connection portion
- lead frame
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 109
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000011265 semifinished product Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Inverter Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
この発明の上記以外の目的、特徴、観点および効果は、図面を参照する以下のこの発明の詳細な説明から、さらに明らかになるであろう。
以下、本発明の実施の形態1に係る半導体モジュールについて、図面に基づいて説明する。図1は、本実施の形態1に係る半導体モジュールを用いたパワーステアリング装置の全体回路図、図2は、本実施の形態1に係る半導体モジュールの半完成品を透視した平面図である。なお、図2中、図1と同一または相当部分には同一符号を付している。
図3は、本発明の実施の形態2に係る半導体モジュールの半完成状態を示す平面透視図である。なお、図3中、図1と同一または相当部分には同一符号を付している。本実施の形態2に係る半導体モジュール1Aは、図1に示すパワーステアリング装置の全体回路図におけるインバータ回路2を構成するものである。
図4は、本発明の実施の形態3に係る半導体モジュールの半完成状態を示す平面透視図、図5は、本実施の形態3に係る半導体モジュールを示す斜視図である。なお、図4中、図1と同一または相当部分には同一符号を付している。本実施の形態3に係る半導体モジュール1Bは、図1に示すパワーステアリング装置の全体回路図におけるインバータ回路2を構成するものである。
図6は、本発明の実施の形態4に係る半導体モジュールを用いたパワーステアリング装置の全体回路図、図7は、本実施の形態4に係る半導体モジュールの半完成品を透視した平面図である。なお、図6中、図1と同一または相当部分には同一符号を付し、説明を省略する。図6に示す制御ユニット200aに含まれるインバータ回路2aは、本実施の形態4に係る半導体モジュール1Cとして単一部品で構成される。
上記実施の形態1から実施の形態4では、リードフレーム25の一部から構成される共通接続部について説明したが、本発明の実施の形態5では、リードフレームとは別の板状部材からなる共通接続部について説明する。
Claims (12)
- 電気的に独立した複数の座面を有するリードフレームと、前記座面上に搭載された複数の半導体素子を含む複数の電子部品と、前記リードフレームおよび前記電子部品を一体化したモールド部とを備え、前記複数の電子部品により複数の回路が構成され、前記モールド部の外部へ延出された前記リードフレームの一部により前記各回路と外部部品とを接続する複数の端子が構成される半導体モジュールであって、
前記各回路における同電位の前記端子の少なくとも一組を前記モールド部の外部で接続する共通接続部を有し、前記共通接続部は、前記各回路の電源線、またはグランド線、またはその他の配線の共通配線であり、且つ該共通配線の端子であることを特徴とする半導体モジュール。 - 前記共通接続部は、前記モールド部の外部へ延出された前記リードフレームからなることを特徴とする請求項1記載の半導体モジュール。
- 前記共通接続部は、前記リードフレームの外枠の一部をなしていることを特徴とする請求項2記載の半導体モジュール。
- 前記モールド部は、平面視において矩形であり、前記共通接続部は、前記モールド部の一つの辺に沿って配置されていることを特徴とする請求項2記載の半導体モジュール。
- 前記モールド部は、平面視において長方形であり、前記共通接続部は、前記モールド部の長辺に沿って配置されていることを特徴とする請求項4記載の半導体モジュール。
- 前記共通接続部は、前記座面の前記半導体素子が搭載される面と直交する方向に曲げられていることを特徴とする請求項2記載の半導体モジュール。
- 前記共通接続部は、前記座面の前記半導体素子が搭載される面の側に曲げられていることを特徴とする請求項6記載の半導体モジュール。
- 前記共通接続部は、前記座面の前記半導体素子が搭載される面の反対側に曲げられていることを特徴とする請求項6記載の半導体モジュール。
- 前記モールド部は、平面視において矩形であり、前記モールド部の一つの辺の側から、前記共通接続部と前記共通接続部に接続されない前記端子とが延出され、それらの少なくとも一方は、前記座面の前記半導体素子が搭載される面と直交する方向に曲げられていることを特徴とする請求項2記載の半導体モジュール。
- 前記共通接続部は、前記リードフレームとは別の板状部材からなることを特徴とする請求項1記載の半導体モジュール。
- 前記モールド部は、平面視において矩形であり、前記共通接続部は、前記モールド部の異なる二辺から延出された少なくとも一組の前記端子を接続していることを特徴とする請求項10記載の半導体モジュール。
- 前記共通接続部は、前記電子部品が接続された前記端子が前記共通配線をなすように構成されたことを特徴とする請求項1記載の半導体モジュール。
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JP2017045875A (ja) * | 2015-08-27 | 2017-03-02 | 日本精工株式会社 | 半導体モジュールおよびその製造方法 |
WO2017056144A1 (ja) * | 2015-09-28 | 2017-04-06 | 三菱電機株式会社 | 半導体装置 |
CN110366817B (zh) * | 2018-01-26 | 2021-07-09 | 新电元工业株式会社 | 电子模块 |
CN110859055B (zh) * | 2018-06-08 | 2022-08-02 | 新电元工业株式会社 | 半导体模块 |
US11410911B2 (en) * | 2018-08-02 | 2022-08-09 | Mitsubishi Electric Corporation | Semiconductor module |
CN110010577A (zh) * | 2019-04-08 | 2019-07-12 | 深圳市鹏源电子有限公司 | 直插式功率器件、半导体组件、轮毂电机驱动器或汽车驱动器和新能源汽车 |
JP7137516B2 (ja) * | 2019-04-12 | 2022-09-14 | 株式会社日立製作所 | 半導体装置および電力変換装置 |
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