JP5793995B2 - リードフレーム、及び、パワーモジュール - Google Patents
リードフレーム、及び、パワーモジュール Download PDFInfo
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- JP5793995B2 JP5793995B2 JP2011143033A JP2011143033A JP5793995B2 JP 5793995 B2 JP5793995 B2 JP 5793995B2 JP 2011143033 A JP2011143033 A JP 2011143033A JP 2011143033 A JP2011143033 A JP 2011143033A JP 5793995 B2 JP5793995 B2 JP 5793995B2
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- Prior art keywords
- lead
- semiconductor element
- leads
- frame
- guide frame
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- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Automation & Control Theory (AREA)
- Inverter Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図3は、実施の形態のパワーモジュール200を含む電気自動車用駆動装置300の一実施例の概略構成を示す図である。
11、11A、12、12A、13、13A 信号リード部
114、114A、15、15A、16、16A、17、17A パワーリード部
118、118A 電圧検出リード部
119 ガイドフレーム
20、20A、20B、20C IGBT
30、30A、30B、30C ダイオード
40 ヒートスプレッダ
150 モールド樹脂部
170 冷却板
180 絶縁シート
200 パワーモジュール
500 配線部
Claims (12)
- 平面視において、半導体素子が配置される領域の一の側に延伸する複数の第1リードと、
平面視において、前記半導体素子が配置される領域の前記一の側とは反対側の他の側に延伸する複数の第2リードと、
平面視において、前記複数の第1リードのうち端に位置する第1リードの外側に並べられる第3リードと、
前記第3リードに接続され、前記第1リード、前記第2リード、及び前記第3リードのガイドフレームの一部であるとともに、前記ガイドフレームの当該一部以外の部分を切除した後に、前記第3リードに接続される配線になる配線部と
を含み、
前記配線部は、前記ガイドフレームのうち、前記複数の第1リード、前記複数の第2リード、及び前記第3リードが並べられる方向において、前記複数の第1リード、前記複数の第2リード、及び前記第3リードに対して最も外側に配置される部分であり、
前記並べられる方向は、前記複数の第1リード及び前記複数の第2リードが伸延する方向に対する幅方向である、リードフレーム。 - 前記配線部は、一端が前記第3リードに接続されるとともに、他端が前記半導体素子の所定端子に接続される、請求項1記載のリードフレーム。
- 前記配線部が接続される前記所定端子は、前記半導体素子の電圧モニタ用の端子である、請求項2記載のリードフレーム。
- 前記第3リードは、電圧モニタ用のリードである、請求項1又は2記載のリードフレーム。
- 前記半導体素子はIGBTであり、
前記所定端子は前記IGBTのコレクタ端子である、請求項2記載のリードフレーム。 - 前記配線部の少なくとも一部は、前記半導体素子とともにモールド樹脂によって覆われる、請求項1乃至5のいずれか一項記載のリードフレーム。
- 前記第2リードは、前記第1リードよりも幅が広い、請求項1乃至6のいずれか一項記載のリードフレーム。
- 前記配線部に接続され、前記複数の第2リードのうち前記端に位置する第1リードに対応する端に位置する第2リードの外側に並べられる第4リードをさらに含む、請求項1乃至7のいずれか一項記載のリードフレーム。
- 平面視において、半導体素子が配置される領域の一の側に延伸する複数の第1リードと、
平面視において、前記半導体素子が配置される領域の前記一の側とは反対側の他の側に延伸する複数の第2リードと、
平面視において、前記複数の第1リードのうち端に位置する第1リードの外側に並べられる第3リードと、
前記第3リードに接続され、前記第1リード、前記第2リード、及び前記第3リードのガイドフレームの一部であるとともに、前記ガイドフレームの当該一部以外の部分を切除した後に、前記第3リードに接続される配線になる配線部と
を含み、
前記配線部は、一端が前記第3リードに接続されるとともに、他端が前記半導体素子の所定端子に接続され、
前記半導体素子はIGBTであり、
前記所定端子は前記IGBTのコレクタ端子である、リードフレーム。 - 平面視において、半導体素子が配置される領域の一の側に延伸する複数の第1リードと、
平面視において、前記半導体素子が配置される領域の前記一の側とは反対側の他の側に延伸する複数の第2リードと、
平面視において、前記複数の第1リードのうち端に位置する第1リードの外側に並べられる第3リードと、
前記第3リードに接続され、前記第1リード、前記第2リード、及び前記第3リードのガイドフレームの一部であるとともに、前記ガイドフレームの当該一部以外の部分を切除した後に、前記第3リードに接続される配線になる配線部と
を含み、
前記第2リードは、前記第1リードよりも幅が広い、リードフレーム。 - 請求項1乃至10のいずれか一項記載のリードフレームと、
前記半導体素子と
を含む、パワーモジュール。 - 平面視において、半導体素子が配置される領域の一の側に延伸する複数の第1リードと、
平面視において、前記半導体素子が配置される領域の前記一の側とは反対側の他の側に延伸する複数の第2リードと、
平面視において、前記複数の第1リードのうち端に位置する第1リードの外側に並べられる第3リードと、
前記第1リード、前記第2リード、及び前記第3リードのガイドフレームであって、一端が前記第3リードに接続され、他端が前記半導体素子の端子に接続される配線部を有するガイドフレームと
を含むリードフレームの前記第1リード、前記第2リード、及び前記配線部と、前記半導体素子との位置を合わせた状態で、前記第1リード、前記第2リード、及び前記配線部を前記半導体素子に接続する工程と、
前記第1リード、前記第2リード、及び前記配線部の前記半導体素子に接続される側と、前記半導体素子とを覆うモールド樹脂部を形成する工程と、
前記モールド樹脂部から外部に露出する前記ガイドフレームのうちの前記配線部以外の部分を切除する工程と
を含む、パワーモジュールの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2011143033A JP5793995B2 (ja) | 2011-06-28 | 2011-06-28 | リードフレーム、及び、パワーモジュール |
US14/129,342 US20140145193A1 (en) | 2011-06-28 | 2012-04-26 | Lead frame and power module |
CN201280032343.5A CN103620768A (zh) | 2011-06-28 | 2012-04-26 | 引线框架及功率组件 |
DE112012002724.8T DE112012002724T5 (de) | 2011-06-28 | 2012-04-26 | Leiterrahmen und Leistungsmodul |
PCT/JP2012/061272 WO2013001905A1 (ja) | 2011-06-28 | 2012-04-26 | リードフレーム、及び、パワーモジュール |
US15/195,466 US20160307829A1 (en) | 2011-06-28 | 2016-06-28 | Lead frame and power module |
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JP2011143033A JP5793995B2 (ja) | 2011-06-28 | 2011-06-28 | リードフレーム、及び、パワーモジュール |
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JP2013012525A5 JP2013012525A5 (ja) | 2015-03-26 |
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US (2) | US20140145193A1 (ja) |
JP (1) | JP5793995B2 (ja) |
CN (1) | CN103620768A (ja) |
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JP6001472B2 (ja) * | 2013-02-12 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP6001473B2 (ja) * | 2013-02-12 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP6114134B2 (ja) * | 2013-07-29 | 2017-04-12 | トヨタ自動車株式会社 | リードフレーム、電力変換装置、半導体装置及び半導体装置の製造方法 |
US9640470B2 (en) | 2013-11-05 | 2017-05-02 | Mitsubishi Electric Corporation | Semiconductor module |
US10361147B1 (en) | 2018-06-28 | 2019-07-23 | Ford Global Technologies, Llc | Inverter power module lead frame with enhanced common source inductance |
US11502045B2 (en) * | 2019-01-23 | 2022-11-15 | Texas Instruments Incorporated | Electronic device with step cut lead |
JP7479759B2 (ja) | 2020-06-02 | 2024-05-09 | 三菱電機株式会社 | 半導体装置の製造方法、および、半導体装置 |
JP7292352B2 (ja) * | 2021-11-02 | 2023-06-16 | 三菱電機株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
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JPH03280562A (ja) * | 1990-03-29 | 1991-12-11 | Hitachi Ltd | リードフレーム及び半導体装置樹脂封止方法 |
US6225684B1 (en) * | 2000-02-29 | 2001-05-01 | Texas Instruments Tucson Corporation | Low temperature coefficient leadframe |
CN101488500B (zh) * | 2001-04-04 | 2016-01-27 | 三菱电机株式会社 | 半导体器件 |
US7884454B2 (en) * | 2005-01-05 | 2011-02-08 | Alpha & Omega Semiconductor, Ltd | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package |
US20060276157A1 (en) * | 2005-06-03 | 2006-12-07 | Chen Zhi N | Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications |
JP5232367B2 (ja) * | 2006-07-12 | 2013-07-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102007020618B8 (de) * | 2007-04-30 | 2009-03-12 | Danfoss Silicon Power Gmbh | Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul |
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2012
- 2012-04-26 WO PCT/JP2012/061272 patent/WO2013001905A1/ja active Application Filing
- 2012-04-26 CN CN201280032343.5A patent/CN103620768A/zh active Pending
- 2012-04-26 US US14/129,342 patent/US20140145193A1/en not_active Abandoned
- 2012-04-26 DE DE112012002724.8T patent/DE112012002724T5/de not_active Withdrawn
-
2016
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US20160307829A1 (en) | 2016-10-20 |
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JP2013012525A (ja) | 2013-01-17 |
US20140145193A1 (en) | 2014-05-29 |
CN103620768A (zh) | 2014-03-05 |
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