JP6255116B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6255116B1 JP6255116B1 JP2016571441A JP2016571441A JP6255116B1 JP 6255116 B1 JP6255116 B1 JP 6255116B1 JP 2016571441 A JP2016571441 A JP 2016571441A JP 2016571441 A JP2016571441 A JP 2016571441A JP 6255116 B1 JP6255116 B1 JP 6255116B1
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Abstract
Description
第一端子と、前記第一端子と一体になった第一本体部と、前記第一本体部上に設けられた第一電子素子と、を有する複数の第一導体部と、
第二端子と、前記第二端子と一体になった第二本体部と、前記第二本体部上に設けられた第二電子素子と、を有する複数の第二導体部と、
前記第一導体部及び前記第二導体部の上面を覆う封止部と、
を備え、
前記第一導体部と前記第二導体部とが接続され、
前記第一導体部と前記第二導体部の接続態様を変えることで、前記第一端子を電源端子として利用する場合には前記第二端子が出力端子となり、前記第二端子を電源端子として利用する場合には前記第一端子が出力端子となるよう、前記第一端子及び前記第二端子の利用態様を選択できる。
前記第一導体部及び前記第二導体部の裏面は前記封止部から露出してもよい。
前記第一本体部及び前記第二本体部は裏面側から見たときに略L字形状となってもよい。
裏面側から見たときに複数の前記第一本体部の各々は同じ形状であり、
裏面側から見たときに複数の前記第二本体部の各々は同じ形状であってもよい。
裏面側から見たときに、前記第一本体部の前記封止部から露出している部分の面積と、前記第二本体部の前記封止部から露出している部分の面積とは略同一であってもよい。
前記第一電子素子と前記第二本体部とは接続子で接続される、又は、前記第二電子素子と前記第一本体部とは接続子で接続されてもよい。
複数の前記接続子の長さが同一であってもよい。
第三端子と、前記第三端子と一体になった第三本体部と、を有する第三導体部をさらに備え、
前記第三導体部は、前記第一電子素子又は前記第二電子素子と直接接続されてもよい。
前記第三端子はグランド端子であってもよい。
前記第一端子及び前記第二端子は表面側に屈曲されており、
前記第一本体部、前記第二本体部、前記第一端子の屈曲されていない部分及び第二端子の屈曲されていない部分は裏面側で面一となってもよい。
表面側から見たときに複数の前記第一電子素子及び複数の前記第二電子素子が均等に配列されてもよい。
《構成》
図1及び図2に示すように、本実施の形態の半導体装置は、複数の第一導体部10と、複数の第二導体部20と、第一導体部10及び第二導体部20の上面を覆う封止部50と、を有している。図3及び図4に示すように、第一導体部10は、第一端子11と、第一端子11と一体になった第一本体部12と、第一本体部12上に設けられた第一電子素子15と、を有している。第二導体部20は、第二端子21と、第二端子21と一体になった第二本体部22と、第二本体部22上に設けられた第二電子素子25と、を有している。第一本体部12及び第二本体部22は、例えば、銅合金等からなり、全面又は部分的にスズめっき処理やニッケルめっき処理等が施されていてもよい。封止部50としてはエポキシ樹脂等を用いてもよい。
次に、上述した構成からなる本実施の形態による作用・効果のうち、まだ説明していないものについて説明する。なお、「作用・効果」で説明するあらゆる態様を、上記構成で採用することができる。
11 第一端子
12 第一本体部
15 第一電子素子
20 第二導体部
21 第二端子
22 第二本体部
25 第二電子素子
30 第三導体部
31 第三端子
32 第三本体部
50 封止部
61 ワイヤ
62 接続子
Claims (11)
- 第一端子と、前記第一端子と一体になった第一本体部と、前記第一本体部上に設けられた第一電子素子と、を有する複数の第一導体部と、
第二端子と、前記第二端子と一体になった第二本体部と、前記第二本体部上に設けられた第二電子素子と、を有する複数の第二導体部と、
前記第一導体部及び前記第二導体部の上面を覆う封止部と、
を備え、
前記第一導体部と前記第二導体部とは接続され、
前記第一導体部と前記第二導体部の接続態様を変えることで、前記第一端子を電源端子として利用する場合には前記第二端子が出力端子となり、前記第二端子を電源端子として利用する場合には前記第一端子が出力端子となるよう、前記第一端子及び前記第二端子の利用態様を選択できることを特徴とする半導体装置。 - 前記第一導体部及び前記第二導体部の裏面は前記封止部から露出していることを特徴とする請求項1に記載の半導体装置。
- 前記第一本体部及び前記第二本体部は裏面側から見たときに略L字形状となることを特徴とする請求項1又は2のいずれかに記載の半導体装置。
- 裏面側から見たときに複数の前記第一本体部の各々は同じ形状であり、
裏面側から見たときに複数の前記第二本体部の各々は同じ形状であることを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。 - 裏面側から見たときに、前記第一本体部の前記封止部から露出している部分の面積と、前記第二本体部の前記封止部から露出している部分の面積とは略同一であることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記第一電子素子と前記第二本体部とは接続子で接続される、又は、前記第二電子素子と前記第一本体部とは接続子で接続されることを特徴とすることを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。
- 複数の前記接続子の長さが同一であることを特徴とすることを特徴とする請求項6に記載の半導体装置。
- 第三端子と、前記第三端子と一体になった第三本体部と、を有する第三導体部をさらに備え、
前記第三導体部は、前記第一電子素子又は前記第二電子素子と直接接続されることを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
- 前記第三端子はグランド端子であることを特徴とする請求項8に記載の半導体装置。
- 前記第一端子及び前記第二端子は表面側に屈曲されており、
前記第一本体部、前記第二本体部、前記第一端子の屈曲されていない部分及び第二端子の屈曲されていない部分は裏面側で面一となっていることを特徴とする請求項1乃至9のいずれか1項に記載の半導体装置。 - 表面側から見たときに複数の前記第一電子素子及び複数の前記第二電子素子が均等に配列されていることを特徴とする請求項1乃至10のいずれか1項に記載の半導体装置。
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PCT/JP2016/057712 WO2017154189A1 (ja) | 2016-03-11 | 2016-03-11 | 半導体装置 |
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JP6255116B1 true JP6255116B1 (ja) | 2017-12-27 |
JPWO2017154189A1 JPWO2017154189A1 (ja) | 2018-03-15 |
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US11227816B2 (en) | 2017-11-10 | 2022-01-18 | Shindengen Electric Manufacturing Co., Ltd. | Electronic module with press hole to expose surface of a conductor |
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US20070267742A1 (en) * | 2006-05-19 | 2007-11-22 | Liang-Pin Tai | Dual mosfet package |
US20130032855A1 (en) * | 2011-08-05 | 2013-02-07 | Infineon Technologies Ag | Semiconductor Arrangement |
JP2014029944A (ja) * | 2012-07-31 | 2014-02-13 | Aisin Aw Co Ltd | スイッチング素子ユニット |
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JP2008118067A (ja) * | 2006-11-08 | 2008-05-22 | Hitachi Ltd | パワーモジュール及びモータ一体型コントロール装置 |
US8456141B2 (en) * | 2007-06-11 | 2013-06-04 | Alpha & Omega Semiconductor, Inc. | Boost converter with integrated high power discrete FET and low voltage controller |
JP2010199492A (ja) * | 2009-02-27 | 2010-09-09 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP5099243B2 (ja) | 2010-04-14 | 2012-12-19 | 株式会社デンソー | 半導体モジュール |
JP5067679B2 (ja) | 2010-05-21 | 2012-11-07 | 株式会社デンソー | 半導体モジュール、および、それを用いた駆動装置 |
US9129949B2 (en) | 2011-02-09 | 2015-09-08 | Mitsubishi Electric Corporation | Power semiconductor module |
JP5569555B2 (ja) * | 2012-05-17 | 2014-08-13 | 株式会社デンソー | 配線部材、および、これを用いた半導体モジュール |
JP5879233B2 (ja) * | 2012-08-31 | 2016-03-08 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール |
ITTO20121081A1 (it) * | 2012-12-14 | 2014-06-15 | St Microelectronics Srl | Componente elettronico di potenza normalmente spento |
JP6020379B2 (ja) | 2013-08-02 | 2016-11-02 | 株式会社デンソー | 半導体装置 |
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US20070267742A1 (en) * | 2006-05-19 | 2007-11-22 | Liang-Pin Tai | Dual mosfet package |
US20130032855A1 (en) * | 2011-08-05 | 2013-02-07 | Infineon Technologies Ag | Semiconductor Arrangement |
JP2014029944A (ja) * | 2012-07-31 | 2014-02-13 | Aisin Aw Co Ltd | スイッチング素子ユニット |
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