JP6000619B2 - 発光装置およびその作製方法 - Google Patents
発光装置およびその作製方法 Download PDFInfo
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- JP6000619B2 JP6000619B2 JP2012099418A JP2012099418A JP6000619B2 JP 6000619 B2 JP6000619 B2 JP 6000619B2 JP 2012099418 A JP2012099418 A JP 2012099418A JP 2012099418 A JP2012099418 A JP 2012099418A JP 6000619 B2 JP6000619 B2 JP 6000619B2
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- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000010410 layer Substances 0.000 claims description 129
- 125000006850 spacer group Chemical group 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 67
- 150000002894 organic compounds Chemical class 0.000 claims description 42
- 239000011159 matrix material Substances 0.000 claims description 27
- 238000005192 partition Methods 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 239000003566 sealing material Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 25
- 239000011521 glass Substances 0.000 description 23
- 239000000126 substance Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 16
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- -1 aromatic amine compound Chemical class 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 230000000740 bleeding effect Effects 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 239000002274 desiccant Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017073 AlLi Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
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Description
アクティブマトリクス型の発光装置の例について、図1(A)及び図1(B)を用いて説明する。なお、図1(B)は発光装置を示す平面図であり、図1(A)は図1(B)を鎖線A−A’で切断した断面図である。
本実施の形態では、実施の形態1に示した有機化合物を含む層815の具体的な積層例を図4を用いて説明する。
本実施の形態では、上記実施の形態で説明した発光装置を用いて作製される電子機器の具体例について、図6を用いて説明する。
107 電極層
141 正孔注入層
142 発光ユニット
143 中間層
144 発光ユニット
145 中間層
146 発光ユニット
147 電子注入層
201 隔壁
202 スペーサ
203 有機化合物を含む層
204 第2の電極
801 ガラス基板
802 画素部
803 駆動回路部
804 駆動回路部(ゲート線駆動回路)
805 固定部
806 ガラス基板
807 配線
808 FPC
809 nチャネル型トランジスタ
810 pチャネル型トランジスタ
812 電流制御用トランジスタ
813 陽極
814 隔壁
815 有機化合物を含む層
816 陰極
817 発光素子
818 閉空間
819 スペーサ
820 矢印
821 着色層
822 ブラックマトリクス
823 乾燥剤
9000 テーブル
9001 筐体
9002 脚部
9003 表示部
9004 表示ボタン
9005 電源コード
9100 テレビジョン装置
9101 筐体
9103 表示部
9105 スタンド
9107 表示部
9109 操作キー
9110 リモコン操作機
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9500 携帯電話機
9501 筐体
9502 表示部
9503 操作ボタン
9504 外部接続ポート
9505 スピーカ
9506 マイク
Claims (7)
- 第1の基板と、
シール材によって前記第1の基板に固定された第2の基板と、を有し、
前記第1の基板は、
トランジスタと、
前記トランジスタに接続する第1の電極と、
前記第1の電極上に有機化合物を含む層と、
前記有機化合物を含む層上に第2の電極と、
前記第1の電極の周縁を覆う隔壁と、
前記隔壁上に遮光性を有するスペーサと、を有し、
前記有機化合物を含む層及び前記第2の電極は、前記遮光性を有するスペーサの上面及び側面を覆い、
前記第2の基板は、
前記第2の基板に接するブラックマトリクス及び着色層と、を有し、
前記ブラックマトリクスは、前記遮光性を有するスペーサ上の前記第2の電極と重なり、
前記着色層は、前記第1の電極と重なることを特徴とする発光装置。 - 請求項1において、
前記第1の基板と前記第2の基板の間は、減圧空間、または不活性ガスで充填することを特徴とする発光装置。 - 請求項1または請求項2において、
前記ブラックマトリクスは、前記第2の電極と接していることを特徴とする発光装置。 - 請求項1または請求項2において、
前記ブラックマトリクス及び前記着色層は、無機材料からなる保護層で覆われ、前記保護層は、前記第2の電極と接していることを特徴とする発光装置。 - 請求項1乃至4のいずれか一において、
前記遮光性を有するスペーサは、黒色の樹脂であることを特徴とする発光装置。 - 請求項1乃至5のいずれか一において、
前記遮光性を有するスペーサの側面は、第1の基板平面に対する角度が、90°または90°よりも大きく、
前記側面に形成された領域における前記有機化合物を含む層の膜厚は、前記第1の電極と重なる領域における前記有機化合物を含む層の膜厚よりも薄いことを特徴とする発光装置。 - 請求項1乃至6のいずれか一において、
前記遮光性を有するスペーサの上面形状は、線状、または網の目状であることを特徴とする発光装置。
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Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6302186B2 (ja) | 2012-08-01 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9577221B2 (en) | 2012-09-26 | 2017-02-21 | Universal Display Corporation | Three stack hybrid white OLED for enhanced efficiency and lifetime |
JP6076683B2 (ja) | 2012-10-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6204012B2 (ja) | 2012-10-17 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 発光装置 |
DE102012112530A1 (de) * | 2012-12-18 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
JP6155020B2 (ja) | 2012-12-21 | 2017-06-28 | 株式会社半導体エネルギー研究所 | 発光装置及びその製造方法 |
JP6216125B2 (ja) | 2013-02-12 | 2017-10-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6104649B2 (ja) * | 2013-03-08 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6331275B2 (ja) * | 2013-06-28 | 2018-05-30 | 大日本印刷株式会社 | カラーフィルタ形成基板および有機el表示装置 |
CN103456765B (zh) * | 2013-09-10 | 2015-09-16 | 深圳市华星光电技术有限公司 | 有源式有机电致发光器件背板及其制作方法 |
TWI667782B (zh) | 2013-09-27 | 2019-08-01 | 群創光電股份有限公司 | 有機發光二極體顯示面板及包含其之有機發光二極體顯示裝置 |
KR102255809B1 (ko) * | 2013-12-02 | 2021-05-24 | 엘지디스플레이 주식회사 | 유기 발광 표시장치 |
JP6200340B2 (ja) | 2014-02-04 | 2017-09-20 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
TWI726843B (zh) | 2014-05-30 | 2021-05-11 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
CN104821329A (zh) * | 2015-05-04 | 2015-08-05 | 深圳市华星光电技术有限公司 | Oled显示装置 |
WO2017037560A1 (en) * | 2015-08-28 | 2017-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
CN105428389B (zh) * | 2015-11-30 | 2018-12-18 | 上海天马有机发光显示技术有限公司 | 一种有机发光显示装置及制造方法 |
CN106547138B (zh) * | 2016-12-08 | 2019-11-26 | 深圳市华星光电技术有限公司 | 显示器及其显示面板 |
CN109427846B (zh) * | 2017-08-28 | 2021-07-27 | 上海和辉光电股份有限公司 | 一种阵列基板及其制作方法、显示面板、显示装置 |
WO2019130400A1 (ja) | 2017-12-25 | 2019-07-04 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置 |
JP6636580B2 (ja) * | 2018-07-27 | 2020-01-29 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置 |
CN109659299B (zh) * | 2019-02-21 | 2024-03-26 | 海迪科(南通)光电科技有限公司 | 一种防止漏光的区域消光背光源结构及其制作方法 |
CN110610972B (zh) * | 2019-09-19 | 2022-06-03 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
KR20210107208A (ko) | 2020-02-21 | 2021-09-01 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111755622B (zh) * | 2020-06-17 | 2021-12-28 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
TW202224224A (zh) * | 2020-11-17 | 2022-06-16 | 日商半導體能源研究所股份有限公司 | 顯示面板、資訊處理裝置、顯示面板的製造方法 |
JP2022115080A (ja) | 2021-01-27 | 2022-08-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11815689B2 (en) | 2021-04-30 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US11699391B2 (en) | 2021-05-13 | 2023-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display apparatus, and electronic device |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6592933B2 (en) | 1997-10-15 | 2003-07-15 | Toray Industries, Inc. | Process for manufacturing organic electroluminescent device |
JPH11339958A (ja) | 1998-05-22 | 1999-12-10 | Casio Comput Co Ltd | 電界発光素子の製造方法 |
JP4364957B2 (ja) | 1998-10-22 | 2009-11-18 | 北陸電気工業株式会社 | 蒸着マスク |
US6469439B2 (en) | 1999-06-15 | 2002-10-22 | Toray Industries, Inc. | Process for producing an organic electroluminescent device |
US6833668B1 (en) | 1999-09-29 | 2004-12-21 | Sanyo Electric Co., Ltd. | Electroluminescence display device having a desiccant |
EP1096568A3 (en) | 1999-10-28 | 2007-10-24 | Sony Corporation | Display apparatus and method for fabricating the same |
JP3809758B2 (ja) | 1999-10-28 | 2006-08-16 | ソニー株式会社 | 表示装置及び表示装置の製造方法 |
JP2001148291A (ja) | 1999-11-19 | 2001-05-29 | Sony Corp | 表示装置及びその製造方法 |
JP4132528B2 (ja) | 2000-01-14 | 2008-08-13 | シャープ株式会社 | 液晶表示装置の製造方法 |
JP2002289347A (ja) | 2001-03-27 | 2002-10-04 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置、その製造方法、被着マスク及びその製造方法 |
JP4262902B2 (ja) * | 2001-03-30 | 2009-05-13 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
JP2003059671A (ja) | 2001-08-20 | 2003-02-28 | Sony Corp | 表示素子及びその製造方法 |
JP2003243171A (ja) | 2002-02-18 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンスディスプレイパネルおよびその製造方法 |
US7179512B2 (en) * | 2002-05-14 | 2007-02-20 | Fujitsu Limited | Liquid crystal display and manufacturing method of same |
KR100478759B1 (ko) * | 2002-08-20 | 2005-03-24 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
KR101192973B1 (ko) * | 2004-03-19 | 2012-10-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 패턴 형성 방법, 박막 트랜지스터, 표시 장치 및 그 제조 방법과, 텔레비전 장치 |
WO2005115061A1 (en) * | 2004-05-20 | 2005-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
JP4877872B2 (ja) * | 2004-07-30 | 2012-02-15 | 株式会社半導体エネルギー研究所 | 表示装置及びアクティブマトリクス型表示装置 |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
JP4879541B2 (ja) | 2004-09-29 | 2012-02-22 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP2006100186A (ja) * | 2004-09-30 | 2006-04-13 | Toshiba Matsushita Display Technology Co Ltd | 有機el表示装置 |
JP2006172940A (ja) * | 2004-12-16 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | 表示装置及び表示装置の製造方法 |
US20060215105A1 (en) * | 2005-03-28 | 2006-09-28 | Innolux Display Corp. | Liquid crystal display device with photo spacers |
US7388329B2 (en) | 2005-04-06 | 2008-06-17 | Lg Display Co., Ltd. | Light emitting display |
US7911562B2 (en) * | 2005-05-19 | 2011-03-22 | Dai Nippon Printing Co., Ltd. | Liquid crystal display and process for producing the same |
JP2007122033A (ja) * | 2005-09-30 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
US7528529B2 (en) | 2005-10-17 | 2009-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical system, semiconductor device, and manufacturing method thereof |
JP2007157404A (ja) * | 2005-12-01 | 2007-06-21 | Seiko Epson Corp | 表示装置および電子機器 |
US8111220B2 (en) * | 2006-01-31 | 2012-02-07 | Lg Display Co., Ltd. | EL device |
KR20080057584A (ko) * | 2006-12-20 | 2008-06-25 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
US7973316B2 (en) | 2007-03-26 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US7825998B2 (en) * | 2007-04-06 | 2010-11-02 | Hannstar Display Corp. | Input display having particular photo sensor, color filter, and light-shielding element arrangement |
KR101374888B1 (ko) * | 2007-07-20 | 2014-03-13 | 한양대학교 산학협력단 | 접착조성물, 접착조성물의 제조방법, 표시장치 및표시장치의 제조방법 |
JP4937935B2 (ja) * | 2008-01-30 | 2012-05-23 | エルジー ディスプレイ カンパニー リミテッド | 有機elディスプレイ及び有機elディスプレイの製造方法 |
WO2009122998A1 (ja) * | 2008-03-31 | 2009-10-08 | 富士電機ホールディングス株式会社 | 面発光表示装置 |
EP2120275A3 (en) * | 2008-05-16 | 2012-08-22 | Semiconductor Energy Laboratory Co, Ltd. | Light-emitting element, lighting apparatus, light-emitting device, electronic appliance, and display |
KR20100004221A (ko) * | 2008-07-03 | 2010-01-13 | 엘지디스플레이 주식회사 | 상부 발광방식 유기전계발광소자 |
CN101971701A (zh) * | 2008-07-10 | 2011-02-09 | 富士电机控股株式会社 | 有机el显示器及其制造方法 |
KR101281748B1 (ko) * | 2008-10-23 | 2013-07-04 | 엘지디스플레이 주식회사 | 상부 발광방식 유기전계발광소자 |
KR101301180B1 (ko) * | 2008-11-21 | 2013-08-28 | 엘지디스플레이 주식회사 | 듀얼플레이트 방식의 유기전계 발광소자 및 그 합착 방법 |
JP5577613B2 (ja) | 2009-03-31 | 2014-08-27 | 大日本印刷株式会社 | カラーフィルタ、その製造方法及び有機elディスプレイ |
KR101582157B1 (ko) * | 2009-08-05 | 2016-01-05 | 삼성디스플레이 주식회사 | 액정표시패널 및 이의 제조방법 |
JP2011076760A (ja) | 2009-09-29 | 2011-04-14 | Toppan Printing Co Ltd | 有機el装置およびその製造方法 |
JP5791514B2 (ja) * | 2009-11-17 | 2015-10-07 | ユニファイド イノヴェイティヴ テクノロジー, エルエルシー | 有機elディスプレイ |
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KR20120121839A (ko) | 2012-11-06 |
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JP6629368B2 (ja) | 2020-01-15 |
JP2012238587A (ja) | 2012-12-06 |
US9871088B2 (en) | 2018-01-16 |
US9356255B2 (en) | 2016-05-31 |
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