JP5968462B2 - 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 - Google Patents

酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 Download PDF

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JP5968462B2
JP5968462B2 JP2014548792A JP2014548792A JP5968462B2 JP 5968462 B2 JP5968462 B2 JP 5968462B2 JP 2014548792 A JP2014548792 A JP 2014548792A JP 2014548792 A JP2014548792 A JP 2014548792A JP 5968462 B2 JP5968462 B2 JP 5968462B2
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sintered body
atomic ratio
refractive index
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淳史 奈良
淳史 奈良
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JX Nippon Mining and Metals Corp
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    • C04B2235/3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]

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  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2014548792A 2013-10-24 2014-01-08 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 Active JP5968462B2 (ja)

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JP2013220805 2013-10-24
JP2013220805 2013-10-24
PCT/JP2014/050106 WO2015059938A1 (ja) 2013-10-24 2014-01-08 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法

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JP2014221233A Division JP2015107909A (ja) 2013-10-24 2014-10-30 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法
JP2014221234A Division JP5913523B2 (ja) 2013-10-24 2014-10-30 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法

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JP2014221234A Active JP5913523B2 (ja) 2013-10-24 2014-10-30 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法
JP2014221233A Pending JP2015107909A (ja) 2013-10-24 2014-10-30 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法

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JP2014221233A Pending JP2015107909A (ja) 2013-10-24 2014-10-30 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法

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KR (1) KR101748017B1 (zh)
CN (1) CN104736497B (zh)
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CN108350564B (zh) * 2015-12-25 2020-05-15 株式会社爱发科 氧化物烧结体溅射靶及其制造方法
JP7416885B1 (ja) 2022-09-30 2024-01-17 鹿島建設株式会社 浮床構造及び浮床施工方法

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JP2009083183A (ja) * 2007-09-28 2009-04-23 Toppan Printing Co Ltd 光学薄膜積層体
WO2012029455A1 (ja) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
WO2012153522A1 (ja) * 2011-05-10 2012-11-15 出光興産株式会社 In2O3-ZnO系スパッタリングターゲット
WO2012153507A1 (ja) * 2011-05-10 2012-11-15 出光興産株式会社 In2O3-SnO2-ZnO系スパッタリングターゲット
WO2013065786A1 (ja) * 2011-11-04 2013-05-10 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法

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JPH08264021A (ja) * 1995-03-26 1996-10-11 Gunze Ltd 透明導電膜
JP3803132B2 (ja) * 1996-01-31 2006-08-02 出光興産株式会社 ターゲットおよびその製造方法
CN1320155C (zh) * 2001-06-26 2007-06-06 三井金属矿业株式会社 高电阻透明导电膜用溅射靶及高电阻透明导电膜的制造方法
JP2004149883A (ja) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
JP4793773B2 (ja) * 2003-03-04 2011-10-12 Jx日鉱日石金属株式会社 スパッタリングターゲットの製造方法
CN102046835B (zh) * 2008-06-03 2013-01-02 Jx日矿日石金属株式会社 溅射靶及非晶光学薄膜
JP5337016B2 (ja) * 2009-12-25 2013-11-06 Jx日鉱日石金属株式会社 焼結体スパッタリングターゲット、光記録媒体用薄膜の製造方法及び光記録媒体用薄膜
JP5440388B2 (ja) * 2010-05-26 2014-03-12 三菱マテリアル株式会社 酸化物スパッタリングターゲットおよび光記録媒体用酸化物膜
JP5339100B2 (ja) * 2011-09-22 2013-11-13 住友金属鉱山株式会社 Zn−Si−O系酸化物焼結体とその製造方法およびスパッタリングターゲットと蒸着用タブレット

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009083183A (ja) * 2007-09-28 2009-04-23 Toppan Printing Co Ltd 光学薄膜積層体
WO2012029455A1 (ja) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
WO2012153522A1 (ja) * 2011-05-10 2012-11-15 出光興産株式会社 In2O3-ZnO系スパッタリングターゲット
WO2012153507A1 (ja) * 2011-05-10 2012-11-15 出光興産株式会社 In2O3-SnO2-ZnO系スパッタリングターゲット
WO2013065786A1 (ja) * 2011-11-04 2013-05-10 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法

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CN104736497B (zh) 2017-09-12
JP5913523B2 (ja) 2016-04-27
KR101748017B1 (ko) 2017-06-15
TW201516168A (zh) 2015-05-01
TWI608111B (zh) 2017-12-11
CN104736497A (zh) 2015-06-24
JP2015107909A (ja) 2015-06-11
JPWO2015059938A1 (ja) 2017-03-09
JP2015107910A (ja) 2015-06-11
WO2015059938A1 (ja) 2015-04-30
KR20150059136A (ko) 2015-05-29

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