JP5968462B2 - 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 - Google Patents
酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 Download PDFInfo
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
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- Inorganic Chemistry (AREA)
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- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2013220805 | 2013-10-24 | ||
JP2013220805 | 2013-10-24 | ||
PCT/JP2014/050106 WO2015059938A1 (ja) | 2013-10-24 | 2014-01-08 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
Related Child Applications (2)
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JP2014221233A Division JP2015107909A (ja) | 2013-10-24 | 2014-10-30 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
JP2014221234A Division JP5913523B2 (ja) | 2013-10-24 | 2014-10-30 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP5968462B2 true JP5968462B2 (ja) | 2016-08-10 |
JPWO2015059938A1 JPWO2015059938A1 (ja) | 2017-03-09 |
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JP2014548792A Active JP5968462B2 (ja) | 2013-10-24 | 2014-01-08 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
JP2014221234A Active JP5913523B2 (ja) | 2013-10-24 | 2014-10-30 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
JP2014221233A Pending JP2015107909A (ja) | 2013-10-24 | 2014-10-30 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
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JP2014221234A Active JP5913523B2 (ja) | 2013-10-24 | 2014-10-30 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
JP2014221233A Pending JP2015107909A (ja) | 2013-10-24 | 2014-10-30 | 酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法 |
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Country | Link |
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JP (3) | JP5968462B2 (zh) |
KR (1) | KR101748017B1 (zh) |
CN (1) | CN104736497B (zh) |
TW (1) | TWI608111B (zh) |
WO (1) | WO2015059938A1 (zh) |
Families Citing this family (2)
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CN108350564B (zh) * | 2015-12-25 | 2020-05-15 | 株式会社爱发科 | 氧化物烧结体溅射靶及其制造方法 |
JP7416885B1 (ja) | 2022-09-30 | 2024-01-17 | 鹿島建設株式会社 | 浮床構造及び浮床施工方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009083183A (ja) * | 2007-09-28 | 2009-04-23 | Toppan Printing Co Ltd | 光学薄膜積層体 |
WO2012029455A1 (ja) * | 2010-08-31 | 2012-03-08 | Jx日鉱日石金属株式会社 | 酸化物焼結体及び酸化物半導体薄膜 |
WO2012153522A1 (ja) * | 2011-05-10 | 2012-11-15 | 出光興産株式会社 | In2O3-ZnO系スパッタリングターゲット |
WO2012153507A1 (ja) * | 2011-05-10 | 2012-11-15 | 出光興産株式会社 | In2O3-SnO2-ZnO系スパッタリングターゲット |
WO2013065786A1 (ja) * | 2011-11-04 | 2013-05-10 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH08264021A (ja) * | 1995-03-26 | 1996-10-11 | Gunze Ltd | 透明導電膜 |
JP3803132B2 (ja) * | 1996-01-31 | 2006-08-02 | 出光興産株式会社 | ターゲットおよびその製造方法 |
CN1320155C (zh) * | 2001-06-26 | 2007-06-06 | 三井金属矿业株式会社 | 高电阻透明导电膜用溅射靶及高电阻透明导电膜的制造方法 |
JP2004149883A (ja) * | 2002-10-31 | 2004-05-27 | Mitsui Mining & Smelting Co Ltd | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
JP4793773B2 (ja) * | 2003-03-04 | 2011-10-12 | Jx日鉱日石金属株式会社 | スパッタリングターゲットの製造方法 |
CN102046835B (zh) * | 2008-06-03 | 2013-01-02 | Jx日矿日石金属株式会社 | 溅射靶及非晶光学薄膜 |
JP5337016B2 (ja) * | 2009-12-25 | 2013-11-06 | Jx日鉱日石金属株式会社 | 焼結体スパッタリングターゲット、光記録媒体用薄膜の製造方法及び光記録媒体用薄膜 |
JP5440388B2 (ja) * | 2010-05-26 | 2014-03-12 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲットおよび光記録媒体用酸化物膜 |
JP5339100B2 (ja) * | 2011-09-22 | 2013-11-13 | 住友金属鉱山株式会社 | Zn−Si−O系酸化物焼結体とその製造方法およびスパッタリングターゲットと蒸着用タブレット |
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2014
- 2014-01-08 KR KR1020147033838A patent/KR101748017B1/ko active IP Right Grant
- 2014-01-08 CN CN201480001634.7A patent/CN104736497B/zh active Active
- 2014-01-08 WO PCT/JP2014/050106 patent/WO2015059938A1/ja active Application Filing
- 2014-01-08 JP JP2014548792A patent/JP5968462B2/ja active Active
- 2014-01-13 TW TW103101125A patent/TWI608111B/zh active
- 2014-10-30 JP JP2014221234A patent/JP5913523B2/ja active Active
- 2014-10-30 JP JP2014221233A patent/JP2015107909A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009083183A (ja) * | 2007-09-28 | 2009-04-23 | Toppan Printing Co Ltd | 光学薄膜積層体 |
WO2012029455A1 (ja) * | 2010-08-31 | 2012-03-08 | Jx日鉱日石金属株式会社 | 酸化物焼結体及び酸化物半導体薄膜 |
WO2012153522A1 (ja) * | 2011-05-10 | 2012-11-15 | 出光興産株式会社 | In2O3-ZnO系スパッタリングターゲット |
WO2012153507A1 (ja) * | 2011-05-10 | 2012-11-15 | 出光興産株式会社 | In2O3-SnO2-ZnO系スパッタリングターゲット |
WO2013065786A1 (ja) * | 2011-11-04 | 2013-05-10 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法 |
Also Published As
Publication number | Publication date |
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CN104736497B (zh) | 2017-09-12 |
JP5913523B2 (ja) | 2016-04-27 |
KR101748017B1 (ko) | 2017-06-15 |
TW201516168A (zh) | 2015-05-01 |
TWI608111B (zh) | 2017-12-11 |
CN104736497A (zh) | 2015-06-24 |
JP2015107909A (ja) | 2015-06-11 |
JPWO2015059938A1 (ja) | 2017-03-09 |
JP2015107910A (ja) | 2015-06-11 |
WO2015059938A1 (ja) | 2015-04-30 |
KR20150059136A (ko) | 2015-05-29 |
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