JP5893868B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5893868B2 JP5893868B2 JP2011177324A JP2011177324A JP5893868B2 JP 5893868 B2 JP5893868 B2 JP 5893868B2 JP 2011177324 A JP2011177324 A JP 2011177324A JP 2011177324 A JP2011177324 A JP 2011177324A JP 5893868 B2 JP5893868 B2 JP 5893868B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting device
- light emitting
- lead frame
- light
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229920005989 resin Polymers 0.000 claims description 79
- 239000011347 resin Substances 0.000 claims description 79
- 238000005520 cutting process Methods 0.000 claims description 34
- 238000000465 moulding Methods 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 238000005336 cracking Methods 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 239000002585 base Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
一方、上記の発光装置において、発光装置のLEDチップ搭載面となるリードフレームを複数接続、保持するための保持部(ハンガーリード、吊りリードともいう)を有するリードフレーム構成を採用し、保持部の箇所で樹脂材料からなるパッケージとともに面一で切断、個片化されて形成されるものがある。
図1は、本発明の実施形態1における発光装置の外観構成例を模式的に示す斜視図である。図2は、図1の発光装置においてLED素子などの発光素子の搭載前の状態を示すリードフレームの透視図である。図3は、図1の発光装置におけるリードフレーム上にLED素子などの発光素子が搭載された状態を示すリードフレームおよび発光素子の透視図である。図4は、個片化して図1の発光装置を得る切断イメージ図である。
2 光学素子
2a ワイヤ
3、4 リードフレーム
3a、4a ハンガーリード
5 白色樹脂キャビティ成型のパッケージ
5a 凹部内の反射壁を構成する側面
5b リードフレームの表面および発光素子の搭載面の位置
6 インナー樹脂(封止樹脂)
7 ブレード(回転切断刃)
8 板体
R アール加工径
C 面取り部
Claims (10)
- 発光する一または複数の発光素子が搭載され、該一または複数の発光素子に対応した電極を構成するリードフレームと樹脂により一体成形された樹脂キャビティ成型パッケージを用いた発光装置において、該リードフレームの保持部の切断面を含む断面4角形状の4角部分のうち、実装面側で下側の1角部または2角部のみに切断時クラック防止用の丸みを付けており、該樹脂の切断面と該リードフレームの保持部の切断面とが面一である発光装置。
- 前記リードフレームの保持部における切断面4角形状の4角部のうち、切断時にクラック発生の起因となる1角部または2角部にクラック防止用の丸みが付けられている請求項1に記載の発光装置。
- 前記パッケージの切断側面に露出する前記リードフレームの保持部における切断面4角形状の4角部のうち、装置実装面側または装置裏面側の1角部または2角部に丸みが付けられている請求項1に記載の発光装置。
- 前記パッケージの切断側面に露出する前記リードフレームの保持部における切断面4角形状の4角部のうちで前記樹脂の薄い方に対向した2角部のうちの少なくとも1角部に丸みが付けられている請求項1に記載の発光装置。
- 切断時に前記樹脂に対して切断用ブレードによる切断負荷がかかる側の1角部または2角部に丸みを付けている請求項1に記載の発光装置。
- 前記パッケージの切断側面に露出する該リードフレームの保持部における切断面4角形状の4角部全てまたは全周囲に丸みを付けている請求項1に記載の発光装置。
- 前記丸み付けは、アール加工または面取り加工により形成されている請求項1〜6のいずれかに記載の発光装置。
- 前記保持部の板厚は前記リードフレームの板厚の半分である請求項1に記載の発光装置。
- 前記樹脂は熱硬化性樹脂である請求項1に記載の発光装置。
- 前記樹脂キャビティ成型パッケージに凹部が上に開放されて形成され、この凹部内のリードフレーム上に前記一または複数の発光素子が搭載されると共に、該凹部内の側面が反射壁として外側に開くようにテーパ状に形成されている請求項1に記載の発光装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011177324A JP5893868B2 (ja) | 2011-08-12 | 2011-08-12 | 発光装置 |
PCT/JP2012/003594 WO2013024561A1 (ja) | 2011-08-12 | 2012-05-31 | 発光装置 |
CN201811571005.4A CN109786536B (zh) | 2011-08-12 | 2012-05-31 | 发光装置 |
US14/117,807 US9331254B2 (en) | 2011-08-12 | 2012-05-31 | Light emitting device |
CN201280032684.2A CN103636013A (zh) | 2011-08-12 | 2012-05-31 | 发光装置 |
TW101128501A TWI467811B (zh) | 2011-08-12 | 2012-08-07 | 發光裝置 |
US15/085,440 US9537072B2 (en) | 2011-08-12 | 2016-03-30 | Light emitting device, lead frame and resin cavity molding package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011177324A JP5893868B2 (ja) | 2011-08-12 | 2011-08-12 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016033524A Division JP6236484B2 (ja) | 2016-02-24 | 2016-02-24 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013041951A JP2013041951A (ja) | 2013-02-28 |
JP5893868B2 true JP5893868B2 (ja) | 2016-03-23 |
Family
ID=47714901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011177324A Active JP5893868B2 (ja) | 2011-08-12 | 2011-08-12 | 発光装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9331254B2 (ja) |
JP (1) | JP5893868B2 (ja) |
CN (2) | CN109786536B (ja) |
TW (1) | TWI467811B (ja) |
WO (1) | WO2013024561A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016105506A (ja) * | 2016-02-24 | 2016-06-09 | シャープ株式会社 | 発光装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10431532B2 (en) * | 2014-05-12 | 2019-10-01 | Rohm Co., Ltd. | Semiconductor device with notched main lead |
CN107210352B (zh) * | 2015-01-19 | 2020-08-11 | Lg 伊诺特有限公司 | 发光器件 |
USD786203S1 (en) * | 2015-02-24 | 2017-05-09 | Nichia Corporation | Light emitting diode |
US10193042B1 (en) * | 2017-12-27 | 2019-01-29 | Innolux Corporation | Display device |
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JPH02263459A (ja) * | 1988-01-05 | 1990-10-26 | Nec Corp | 半導体装置 |
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CN201715459U (zh) * | 2010-05-01 | 2011-01-19 | 博罗冲压精密工业有限公司 | Led支架 |
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TW201251140A (en) * | 2011-01-31 | 2012-12-16 | Cree Inc | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
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JP2016105506A (ja) * | 2016-02-24 | 2016-06-09 | シャープ株式会社 | 発光装置 |
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US9537072B2 (en) | 2017-01-03 |
US9331254B2 (en) | 2016-05-03 |
CN109786536B (zh) | 2021-09-28 |
JP2013041951A (ja) | 2013-02-28 |
TW201314966A (zh) | 2013-04-01 |
CN103636013A (zh) | 2014-03-12 |
CN109786536A (zh) | 2019-05-21 |
TWI467811B (zh) | 2015-01-01 |
WO2013024561A1 (ja) | 2013-02-21 |
US20160254430A1 (en) | 2016-09-01 |
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