JP5847363B1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5847363B1
JP5847363B1 JP2015529358A JP2015529358A JP5847363B1 JP 5847363 B1 JP5847363 B1 JP 5847363B1 JP 2015529358 A JP2015529358 A JP 2015529358A JP 2015529358 A JP2015529358 A JP 2015529358A JP 5847363 B1 JP5847363 B1 JP 5847363B1
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film
electrode
semiconductor device
antioxidant
organic resin
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JPWO2015159579A1 (ja
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基 吉田
基 吉田
加寿代 遠藤
加寿代 遠藤
藤田　淳
藤田　　淳
博明 岡部
博明 岡部
須賀原　和之
和之 須賀原
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本発明は、高温動作においてもＣｕ配線の酸化を抑制する半導体装置の提供を目的とする。本発明に係る半導体装置は、主面を有する基板１と、基板１の主面の側に選択的に形成されたＣｕ電極８と、Ｃｕ電極８の上面にその端部を除いて形成された酸化防止膜１４と、基板１の主面上に形成され、Ｃｕ電極８の側面および上面の端部を覆う有機樹脂膜１０と、有機樹脂膜１０と基板１の主面との間、並びに有機樹脂膜１０とＣｕ電極８の側面および上面の端部との間に、両者に接して形成される拡散防止膜１１と、を備える。

Description

この発明は、半導体装置に関し、特に、Ｃｕ配線電極の酸化を防ぐ技術に関する。
従来、電力用途等で用いられる半導体装置の配線材料にはＡｌ（アルミニウム）系材料が用いられてきた。従来、半導体装置は２００℃未満で動作されていたが、２００℃を超える高温での動作が要求されるに伴い、ワイドギャップ半導体を用いた半導体装置が注目されている。その一例は、炭化珪素半導体素子を用いた半導体装置である。しかしながら、２００℃を超える高温動作においては、Ａｌ系配線材料と半導体素子の電極との相互反応や、Ａｌ系配線材料の形状変化などにより、炭化珪素半導体装置の信頼性が低下する問題があった。そこで、Ａｌに代わる配線材料として、２００℃以上の高温で用いることができるＣｕ（銅）が注目されている（例えば、特許文献１参照）。
国際公開第２００７‐１０８４３９号
Ｃｕを配線材料に用いた半導体装置を２００℃以上で動作させると、Ｃｕ配線電極の表面が酸化される。この問題に対し、半導体装置は通常、大気中での静電気対策などのために有機樹脂膜によって被覆されているが、従来、有機樹脂膜の開口部から無電解メッキによりＣｕ配線上にＮｉ層を形成することにより、Ｃｕ配線電極の酸化を抑制している。しかし、有機樹脂膜とＮｉ層の界面において密着力不足による空孔が生成され、この空孔から酸素又は水分がＣｕ配線電極に侵入するという問題があった。
本発明は上述の課題を解決するためになされたものであり、高温動作においてもＣｕ配線の酸化を抑制する半導体装置の提供を目的とする。
本発明に係る第１の半導体装置は、主面を有する半導体基板と、半導体基板の主面の側に選択的に形成されたＣｕ電極と、Ｃｕ電極の上面にその端部を除いて形成された酸化防止膜と、半導体基板の主面上、Ｃｕ電極の側面および上面の酸化防止膜が形成されない端部が被覆されるようにして、酸化防止膜と密着して形成された無機膜と、Ｃｕ電極の上面の端部を除く領域を避けて無機膜上に形成された有機樹脂膜と、を備える。
また、本発明に係る第２の半導体装置は、主面を有する半導体基板と、半導体基板の主面の側に選択的に形成されたＣｕ電極と、Ｃｕ電極の上面にその端部を除いて形成された酸化防止膜と、半導体基板の主面上からＣｕ電極の側面及び酸化防止膜の上面の端部にかけて、Ｃｕ電極の上面の酸化防止膜が形成されない端部が被覆されるようにして、酸化防止膜の上面の端部を除く領域を露出させるように形成された無機膜と、酸化防止膜の上面の端部を除く領域を避けて無機膜上に形成された有機樹脂膜と、を備える。
本発明に係る第１の半導体装置は、主面を有する半導体基板と、半導体基板の主面の側に選択的に形成されたＣｕ電極と、Ｃｕ電極の上面にその端部を除いて形成された酸化防止膜と、半導体基板の主面上、Ｃｕ電極の側面および上面の酸化防止膜が形成されない端部が被覆されるようにして、酸化防止膜と密着して形成された無機膜と、Ｃｕ電極の上面の端部を除く領域を避けて無機膜上に形成された有機樹脂膜と、を備える。従って、Ｃｕ電極の上面に形成された酸化防止膜と無機膜との密着力が大きいので、有機樹脂膜と酸化防止膜の界面から侵入する水や酸素がＣｕ電極の表面に到達することを、無機膜と酸化防止膜によって抑制することができる。そのため、半導体装置を高温動作させてもＣｕ電極の酸化を抑制することができ、半導体装置の信頼性が向上する。
本発明に係る第２の半導体装置は、主面を有する半導体基板と、半導体基板の主面の側に選択的に形成されたＣｕ電極と、Ｃｕ電極の上面にその端部を除いて形成された酸化防止膜と、半導体基板の主面上からＣｕ電極の側面及び酸化防止膜の上面の端部にかけて、Ｃｕ電極の上面の酸化防止膜が形成されない端部が被覆されるようにして、酸化防止膜の上面の端部を除く領域を露出させるように形成された無機膜と、酸化防止膜の上面の端部を除く領域を避けて無機膜上に形成された有機樹脂膜と、を備える。従って、Ｃｕ電極の上面に形成された酸化防止膜と無機膜との密着力が大きいので、有機樹脂膜と酸化防止膜の界面から侵入する水や酸素がＣｕ電極の表面に到達することを、無機膜と酸化防止膜によって抑制することができる。そのため、半導体装置を高温動作させてもＣｕ電極の酸化を抑制することができ、半導体装置の信頼性が向上する。
本発明の実施の形態１に係る半導体装置の構造を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態１に係る半導体装置の製造工程を示す断面図である。 本発明の実施の形態２に係る半導体装置の構造を示す断面図である。 本発明の実施の形態３に係る半導体装置の構造を示す断面図である。 本発明の実施の形態３に係る半導体モジュールの構造を示す断面図である。 拡散防止膜の膜厚を変化させたときのＣｕ電極の酸化耐性を示す図である。
＜Ａ．実施の形態１＞
＜Ａ−１．構成＞
本発明の実施の形態１に係る半導体装置の構成を説明する。以下、本明細書では当該半導体装置の一例として、ｎ型の炭化珪素ショットキーバリアダイオード（ＳＢＤ：Schottky diode）を炭化珪素半導体素子として含む炭化珪素半導体装置について説明する。
図１は、当該炭化珪素半導体装置１００の構成を示す、基板の主面に垂直な方向の断面図である。なお、図１では、炭化珪素半導体装置１００の断面図の左半分のみを示している。つまり、炭化珪素半導体装置１００の実際の断面図は、図１に示す断面図をその右端を軸に左右対称にしたものである。また、炭化珪素半導体装置１００の平面図は図示を省略するが、基板の主面に垂直な方向の何れの断面図においても、図１のようになっている。
炭化珪素半導体装置１００は、ｎ型の炭化珪素からなる半導体基板（炭化珪素基板）である基板１、ショットキー電極５、バリアメタル層６、金属層７、Ｃｕ電極８、酸化防止膜１４、拡散防止膜１１、有機樹脂膜１０及び裏面外部出力電極１３を備えている。
図１には示していないが、基板１の主面側の表層がドリフト層となる。ショットキー電極５は、基板１の主面に形成され、その厚みは１００ｎｍ以上５００ｎｍ以下とする。バリアメタル層６及び金属層７は、ショットキー電極５の上面に順に積層される。
バリアメタル層６の厚みは、１０ｎｍ以上２００ｎｍ以下とする。金属層７の上面には、配線電極となるＣｕ電極８が形成される。Ｃｕ電極８は、金属層７の上面に形成される下層の第１Ｃｕ層８ａと、上層の第２Ｃｕ層８ｂからなる。第１Ｃｕ層８ａは、第２Ｃｕ層８ｂを形成するためのシード層であり、第２Ｃｕ層８ｂは表面外部出力電極である。
酸化防止膜１４は、下層の第１酸化防止膜１４ａと上層の第２酸化防止膜１４ｂからなる。第１酸化防止膜１４ａはＣｕ電極８の第２Ｃｕ層８ｂの上面にパターン形成、特に当該上面の端部を除いて形成される。第１酸化防止膜１４ａは、Ｎｉ，Ａｇ，Ｓｎ，Ａｌ，Ａｕ又はそれらを含む合金、あるいはこれらの積層構造から形成される。そして、Ｃｕ電極８の酸化を防止する観点から、その膜厚は１０ｎｍ以上１０μｍ未満である。
第２酸化防止膜１４ｂは、第１酸化防止膜１４ａの上面においてその端部を除く領域に形成される。その膜厚は、Ｃｕ電極８の酸化を防止する観点から、１０ｎｍ以上１００μｍ未満とする。第２酸化防止膜１４ｂの材料は、第１酸化防止膜１４ａの材料と異なっていても良いが、代表的な材料は、Ｎｉ、Ａｇ、Ｓｎ、Ａｌ、Ａｕ又はそれらを含む合金、あるいはこれらの積層構造である。
基板１のドリフト層、ショットキー電極５、バリアメタル層６、金属層７、Ｃｕ電極８及び第１酸化防止膜１４ａの露出面は、拡散防止膜１１により被覆される。すなわち、基板１のドリフト層表面、ショットキー電極５、バリアメタル層６、金属層７、Ｃｕ電極８及び第１酸化防止膜１４ａの側面が拡散防止膜１１により被覆される。さらに、金属層７はバリアメタル層６の上面においてその端部を除く領域に形成されるため（図１参照）、バリアメタル層６の上面の当該端部も拡散防止膜１１により被覆される。すなわち、金属層７はバリアメタル層６の上面において中心側に形成され、端部領域には拡散防止膜１１が形成される。また、Ｃｕ電極８の上面の第１酸化防止膜１４ａが形成されない端部も拡散防止膜１１により被覆される。すなわち、Ｃｕ電極８の上面において中心側には第１酸化防止膜１４ａが形成され、端部領域には拡散防止膜１１が形成される。また、第１酸化防止膜１４ａの上面の第２酸化防止膜１４ｂが形成されない領域の拡散防止膜１１により被覆される。すなわち、第１酸化防止膜１４ａの上面において中心側には第２酸化防止膜１４ｂが形成され、端部領域には拡散防止膜１１が形成される。拡散防止膜１１はＳｉＮ、ＳｉＯＮ又はＳｉ３Ｎ４等の無機膜である。そして、その膜厚は、Ｃｕ電極８への酸素又は水分の侵入を食い止めるため、少なくとも１００ｎｍ以上とする。
図１３に、拡散防止膜１１の膜厚を変化させたときのＣｕ電極８の酸化耐性を示す。ＳｉＮからなる拡散防止膜１１の膜厚を１０，３０，５０，１００，３００，５００ｎｍと変化させ、それぞれについて２００℃で１０００時間の高温保管試験を行った。そして、そのときのＣｕ電極８の酸化膜厚を評価し、酸化膜が形成されていなければ○、酸化膜が形成されていれば×で示した。
図１３より、拡散防止膜１１の膜厚が３０ｎｍ以上あれば、Ｃｕ電極８の酸化耐性を確保できることが分かる。但し、将来、拡散防止膜１１の形成方法や膜質の高緻密化が実現できた際、拡散防止膜１１を例えば１ｎｍ程度まで極端に小さくすることが可能であると推測される。また、拡散防止膜１１を１０μｍ以下の膜厚にすることによって、拡散防止膜１１自身に発生する応力によるクラック発生を抑制できる。
拡散防止膜１１は、屈折率が２．４以上２．７未満の半絶縁性のＳｉＮとしてもよい。
拡散防止膜１１は、有機樹脂膜１０により被覆されている。有機樹脂膜１０は、ポリイミドであり、その膜厚は３μｍ以上１００μｍ以下とする。拡散防止膜１１は、上述のＣｕ電極８の酸化防止だけでなく、Ｃｕ電極８から有機樹脂膜１０へのＣｕの拡散を防止する役目も果たす。
基板１の裏面、すなわちショットキー電極５を形成する主面とは反対側の面には、裏面外部出力電極１３が形成される。以上、図１に示す炭化珪素半導体装置１００の構成を説明した。炭化珪素半導体装置１００のうち、基板１、ショットキー電極５及びバリアメタル層６が炭化珪素ショットキーバリアダイオードを構成する。
このような炭化珪素半導体装置１００の構成において、有機樹脂膜１０と酸化防止膜１４の密着力不足により、両者の界面に空孔が生じる。その空孔を通して当該界面に水分又は酸素が侵入する。しかし、無機膜である拡散防止膜１１の酸化防止膜１４に対する密着性は有機樹脂膜１０のそれよりも高く、拡散防止膜１１と有機樹脂膜１０との界面に空孔が生じにくいため、拡散防止膜１１により当該水分又は酸素がＣｕ電極８まで到達することを抑制できる。従って、高温動作時にＣｕ電極８の酸化が抑制され、炭化珪素半導体装置１００の信頼性が向上する。
＜Ａ−２．製造方法＞
次に、図１に示す炭化珪素半導体装置１００の製造方法を図２から９に沿って説明する。図２から９は、炭化珪素半導体装置１００の製造工程を示す断面図である。なお、図２から９では、図１と同様に、炭化珪素半導体装置１００の左側半分の断面のみを示している。
まず、高濃度の不純物濃度を有するｎ型（ｎ＋型）の炭化珪素からなる基板１を用意する。そして、基板１の主面に、Ｔｉ，Ｍｏ，Ｎｉ等のターゲットを用いて、例えばスパッタ法により膜厚が１００ｎｍ以上５００ｎｍ以下のショットキー電極５を成膜する。ショットキー電極５は、基板１のドリフト層の表面全体に成膜される。さらに、ショットキー電極５の表面全体に、ＴｉＮを例えばスパッタ法で製膜し、バリアメタル層６を形成する。Ｃｕ電極８からショットキー電極５へＣｕが拡散すると、リーク電流の増加等、炭化珪素半導体装置の電気的特性の劣化につながるため、これを防止する目的でバリアメタル層６が設けられている。その観点から、バリアメタル層６の膜厚は１０ｎｍ以上２００ｎｍ以下とすることが望ましい。
次に、基板１の周辺部（図２の左側）からバリアメタル層６を除去するため、写真製版によるレジストパターンからなるエッチングマスク１５を基板１の中央部（図２の右側）にのみ形成する。そして、エッチングマスク１５を用いてバリアメタル層６をエッチングする。バリアメタル層６が例えばＴｉＮである場合は、バリアメタル層６をウェットエッチングする。
続いて、エッチングマスク１５を用いてショットキー電極５のエッチングを行う。ショットキー電極５の金属が例えばＴｉの場合、フッ酸を希釈した溶液でウェットエッチングする（図２参照）。その後、エッチングマスク１５は、有機溶剤を用いたウェットエッチングまたは酸素プラズマを用いたアッシングにより除去される。こうして、実施の形態１の炭化珪素半導体素子である炭化珪素ショットキーバリアダイオードが完成する。
次に、全面、すなわちバリアメタル層６および基板１のドリフト層表面に、例えばＴｉを成膜し、金属層７を形成する。バリアメタル層６上に金属層７を形成することにより、後工程で形成されるＣｕ電極８とバリアメタル層６との密着性を改善する。また、基板１のドリフト層表面に金属層７を形成することにより、後工程でＣｕ電極８の第１Ｃｕ層８ａがドリフト層に直接形成されないので、金属層７がＣｕに関するバリアメタルとして機能し、第１Ｃｕ層８ａからドリフト層へＣｕが拡散することを抑制できる。
次に、金属層７の上面に、第２Ｃｕ層８ｂの下地となる第１Ｃｕ層８ａを形成する。第１Ｃｕ層８ａはＣｕ膜またはＣｕ合金膜であり、例えば、ＰＶＤ（Physical Vapor Deposition）法、熱蒸着、電子ビーム蒸着、スパッタ、有機金属等のガスを用いたメタルＣＶＤ（Chemical Vapor Deposition）法等で製膜される。第１Ｃｕ層８ａの厚みは、１００ｎｍ以上１０００ｎｍ以下とする。ここでは、バリアメタル層６の上面に金属層７を介して第１Ｃｕ層８ａを成膜しているので、上述したように密着性の高いＣｕ電極８を得ることが出来る。
次に、レジストを塗布、露光、現像することにより、第１Ｃｕ層８ａの上面の、第２Ｃｕ層８ｂを成膜させたくない領域にレジストマスク１６を形成する（図３参照）。つまり、第２Ｃｕ層８ｂが基板１の中央側（図３の右側）に成膜され、周辺側（図３の左側）に成膜されないように、バリアメタル層６上に金属層７を介して形成された第１Ｃｕ層８ａの上面が開口するようレジストマスク１６をパターニングする。
次に、レジストマスク１６を用いて第２Ｃｕ層８ｂをめっき法により成膜する。第２Ｃｕ層８ｂは、第１Ｃｕ層８ａの上面のうち、レジストマスク１６の形成されていない領域に、レジストマスク１６の側壁に沿って形成される。第２Ｃｕ層８ｂの厚さは、例えば６μｍ以上１００μｍ未満であれば良く、Ｃｕ電極８全体の厚みとしては７μｍ以上１００μｍ未満であれば良い。こうして、図３に示す構成が形成される。
次に、レジストマスク１６を、有機溶剤を用いたウェットエッチングまたは酸素プラズマを用いたアッシングにより除去する（図４）。
さらに、ドリフト層の表面に金属層７を介して形成された第１Ｃｕ層８ａを全てウェットエッチングする。なお、第１Ｃｕ層８ａをウェットエッチングする際、バリアメタル層６の上面のＣｕ電極８（第１Ｃｕ層８ａおよび第２Ｃｕ層８ｂ）の露出領域もウェットエッチング液に曝される。従って、当該曝された箇所のＣｕ電極８もある程度エッチングされる。
次に、第１Ｃｕ層８ａおよび第２Ｃｕ層８ｂをマスクして、ドリフト層上に形成された金属層７をフッ酸により除去する。以上の工程を経て、図５の構造を得る。
次に、第１酸化防止膜１４ａを全面に形成し、エッチングマスク１５を用いて、第２Ｃｕ層８ｂの上面の端部を除く領域に第１酸化防止膜１４ａが残るよう、他の領域から第１酸化防止膜１４ａを除去する。
その後、ショットキー電極５、バリアメタル層６、金属層７、Ｃｕ電極８、第１酸化防止膜１４ａ及びドリフト層の露出面を、拡散防止膜１１で被覆する。拡散防止膜１１は、ＳｉＮ，ＳｉＯＮ，Ｓｉ３Ｎ４等の無機膜であり、例えばＣＶＤ法により形成される。拡散防止膜１１の膜厚は少なくとも３０ｎｍとなるようにする。側壁部、特に裾部で拡散防止膜１１の膜厚が薄くなるので、この部分の膜厚が３０ｎｍ以上となるようにする。なお、膜厚は１００ｎｍ以上であれば、より望ましい。
拡散防止膜１１の膜厚を３０ｎｍ以上とする理由は、上記に説明したように図１３の高温保管試験結果からである。また、以下の理由からでもある。一般に、炭化珪素半導体装置は２００℃以上の高温下での動作が想定される。このため、高温下での使用が想定されないＳｉ半導体装置と比較して、熱により発生する応力がより大きくなる。また、熱によるＣｕの拡散速度がより大きくなる。拡散防止膜１１を被覆する有機樹脂膜１０の膜厚を３μｍ以上１００μｍ以下とした場合、拡散防止膜１１の膜厚が３０ｎｍより薄いと、有機樹脂膜１０の応力により拡散防止膜１１にクラックが生じ、クラック中をＣｕ原子が拡散するという問題が生じる。よって、拡散防止膜１１の膜厚を３０ｎｍ以上とする。
次に、写真製版によるレジストパターンをマスクとして拡散防止膜１１をＲＩＥ（Reactive Ion Etching）等でエッチングすることにより、第１酸化防止膜１４ａの上面の端部を除く領域を露出させる（図７）。
次に、拡散防止膜１１および露出している第１酸化防止膜１４ａの上面を被覆するように、スピンコート法などで有機樹脂膜１０を形成する。有機樹脂膜１０の膜厚は、３μｍ以上１００μｍ以下とする。
続いて、写真製版によるレジストパターンをマスクとして有機樹脂膜１０をエッチングし、第１酸化防止膜１４ａの上面の端部を除く領域を露出させる(図８)。
次に、有機樹脂膜１０の開口部に、例えば無電解メッキ法で第２酸化防止膜１４ｂを形成する。第２酸化防止膜１４ｂは、例えば無電解メッキ法で形成する。さらに、基板１の裏面、すなわちショットキー電極５が形成される主面とは反対側の面に、裏面外部出力電極１３を形成する。以上の工程により、実施の形態１の半導体装置が得られる（図９：図１の再掲）。
なお、上記の説明では、拡散防止膜１１のエッチングと有機樹脂膜１０のエッチングを別々に行った。しかし、拡散防止膜１１の成膜に続けて有機樹脂膜１０を成膜し、拡散防止膜１１と有機樹脂膜１０を同時にエッチングして、第１酸化防止膜１４ａの上面の一部を露出させてもよい。これにより、エッチング工程数を１工程削減できる。
また、本実施の形態によれば、拡散防止膜１１と有機樹脂膜１０をそれぞれ１回の成膜工程と１回のエッチング工程で形成するため、単純な製造プロセスかつ低コストな方法で、信頼性の高い半導体装置を得ることが出来る。
＜Ａ−３．変形例＞
なお、上記の炭化珪素半導体装置の製造方法は一例であり、本実施の形態の半導体装置の製造方法はこれに限定されない。最終的に、図１に示す構造が得られれば、本実施の形態の説明で述べた以外の製造方法を用いても良い。
なお、本実施の形態では半導体素子をｎ型の炭化珪素ショットキーバリアダイオードとしたが、ｐ型であっても良いのは言うまでも無い。また、半導体材料には炭化珪素の他、高温動作可能なワイドバンドギャップ半導体を用いても良い。
また、炭化珪素半導体装置では高耐圧下での動作が求められるため、Ｃｕ電極８の表面が酸化すると、Ｃｕ電極と接合されたモジュール部材との密着力低下をもたらし、信頼性の低下、不安定化、またはモジュール破壊や不安定な動作の一因となる。炭化珪素を用いて安定した高耐圧動作を実現するために、本実施の形態における炭化珪素半導体装置は有効である。
なお、本実施の形態では半導体素子としてショットキーバリアダイオードを用いたが、ＪＢＳ（Ｊｕｎｃｔｉｏｎ Ｂａｒｒｉｅｒ Ｓｃｈｏｔｔｋｙ）やＭＯＳＦＥＴ（Ｍｅｔａｌ Ｏｘｉｄｅ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）、ＪＦＥＴ（Ｊｕｎｃｔｉｏｎ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）、ＰＮダイオードなど、その他のデバイスであっても良い。配線電極材料としてＣｕを用い、有機樹脂膜１０で半導体素子を被覆する構造であれば、あらゆる半導体素子に本実施の形態を適用することができる。
＜Ａ−４．効果＞
実施の形態１に係る半導体装置の一例である炭化珪素半導体装置１００は、基板１の主面の側に選択的に形成されたＣｕ電極８と、Ｃｕ電極８の上面にその端部を除いて形成された酸化防止膜１４と、基板１の主面上に形成され、Ｃｕ電極８の側面および上面の前記端部を覆う有機樹脂膜１０と、有機樹脂膜１０と基板１の主面との間、並びに有機樹脂膜１０とＣｕ電極８の側面および上面の端部との間に、両者に接して形成される無機膜の拡散防止膜１１と、を備える。すなわち、Ｃｕ電極８の側面と酸化防止膜１４の側面とに段差を設け、当該段差にかかるＣｕ電極８の側面及び上面の端部において有機樹脂膜１０との間に拡散防止膜１１を設けている。拡散防止膜１１と酸化防止膜１４の密着力は、有機樹脂膜１０と酸化防止膜１４の密着力よりも強いため、有機樹脂膜１０と酸化防止膜１４の界面から侵入する水分又は酸素を酸化防止膜１４と拡散防止膜１１で遮断し、Ｃｕ電極８の酸化を抑制することができる。
また、酸化防止膜１４は、Ｃｕ電極８上に形成された第１酸化防止膜１４ａと、第１酸化防止膜１４ａの上面にその端部を除いて形成された第２酸化防止膜１４ｂと、を備え、拡散防止膜１１は、有機樹脂膜１０と第１酸化防止膜１４ａの側面および上面の端部との間に、両者に接して形成される。すなわち、Ｃｕ電極８の側面と第１酸化防止膜１４ａの側面だけでなく、第１酸化防止膜１４ａの側面と第２酸化防止膜１４ｂの側面にも段差を設け、当該段差にかかる第１酸化防止膜１４ａの側面及び上面の端部において有機樹脂膜１０との間に拡散防止膜１１を設けている。これにより、第１酸化防止膜１４ａと拡散防止膜１１の界面に沿ってＣｕ電極８に至る距離が長くなるので、有機樹脂膜１０と第２酸化防止膜１４ｂの界面から侵入する水分又は酸素を拡散防止膜１１で遮断し、Ｃｕ電極８の酸化をより一層抑制することができる。
また、炭化珪素半導体装置１００は、基板１とＣｕ電極８との間に形成されたバリアメタル層６をさらに備え、拡散防止膜１１はバリアメタル層６の側面と有機樹脂膜１０との間にも、両者に接して形成されるので、有機樹脂膜１０と拡散防止膜１１の界面から侵入する水分又は酸素を拡散防止膜１１で遮断し、Ｃｕ電極８の酸化を抑制することができる。
また、Ｃｕ電極８は、バリアメタル層６の上面にその端部を除いて形成され、拡散防止膜１１は、有機樹脂膜１０とバリアメタル層６の側面及び上面の端部との間に、両者に接して形成される。このような構造においても、有機樹脂膜１０と拡散防止膜１１の界面から侵入する水分又は酸素を拡散防止膜１１で遮断し、Ｃｕ電極８の酸化を抑制することができる。
また、本実施の形態ではＣｕ電極８の側面にも拡散防止膜１１を設けたが、これは、Ｃｕ電極８の側面と有機樹脂膜１０との間に拡散防止膜１１を設けた場合、有機樹脂膜１０中の水分や酸素がＣｕ電極８に拡散し、Ｃｕと反応することを抑制する効果が得られる。
本実施の形態では、基板１上にも拡散防止膜１１を形成したが、基板１上には形成していなくても良い。しかしながら、基板１の主面上に拡散防止膜１１が形成されていないと、基板１の主面上にＣｕと水分との反応物が生成され、半導体装置の絶縁性や信頼性が低下する問題が生じる場合がある。本実施の形態の図１で示されるように、基板１と有機樹脂膜１０との間から、拡散防止膜１１の上面と有機樹脂膜１０との上面に連続して設けられていれば、Ｃｕ電極８から拡散防止膜１１に沿って基板１の主面上にまでＣｕが拡散してきたとしても、有機樹脂膜１０との間に拡散防止膜１１が設けられているので、有機樹脂膜１０中の水分や酸素とＣｕとが反応することを抑制できる。
＜Ｂ．実施の形態２＞
＜Ｂ−１．構成＞
実施の形態１に係る炭化珪素半導体装置１００では、酸化防止膜１４を第１酸化防止膜１４ａと第２酸化防止膜１４ｂの２層構造とし、有機樹脂膜１０の側面と第２酸化防止膜１４ｂとの密着力不足により生じた空孔より侵入した酸素、水分を第１酸化防止膜１４ａで食い止めた。しかし、図１０に示す実施の形態２に係る炭化珪素半導体装置１０１では、酸化防止膜１４を単層構造とし、その厚さを１０ｎｍ以上１００μｍ未満とする。
炭化珪素半導体装置１０１は、酸化防止膜１４を単層構造とする他は、炭化珪素半導体装置１００の構成と同様である。このような構造であっても、拡散防止膜１１と酸化防止膜１４の密着力は確保される為、拡散防止膜１１の膜厚が３０ｎｍ以上確保できれば酸素又は水分のＣｕ電極８への侵入を食い止めることが可能である。
＜Ｂ−２．製造方法＞
炭化珪素半導体装置１０１の製造方法は、Ｃｕ電極８の形成までは炭化珪素半導体装置１００の製造方法と同様である。金属層７上にＣｕ電極８を形成した後、全面に拡散防止膜１１及び有機樹脂膜１０を順に積層する。そして、Ｃｕ電極８の上面の端部を除く領域が露出するよう拡散防止膜１１及び有機樹脂膜１０をエッチングして開口部を形成する。そして、当該開口部からＣｕ電極８上に酸化防止膜１４を形成する。
＜Ｂ−３．効果＞
炭化珪素半導体装置１０１は、炭化珪素半導体装置１００の構成において、酸化防止膜１４を単層構造とし、その厚さを１０ｎｍ以上１００μｍ以下とする。このような構造であっても、拡散防止膜１１と酸化防止膜１４の密着力は確保される為、拡散防止膜１１の膜厚が３０ｎｍ以上確保できれば酸素又は水分のＣｕ電極８への侵入を食い止めることが可能である。
また、炭化珪素半導体装置１０１の製造方法は、（ａ）基板１上にＣｕ電極８を形成する工程と、（ｂ）基板１及びＣｕ電極８を無機膜である拡散防止膜１１で覆う工程と、（ｃ）拡散防止膜１１を有機樹脂膜１０で被覆する工程と、（ｄ）有機樹脂膜１０及び拡散防止膜１１をエッチングして開口部を形成し、当該開口部からＣｕ電極８を露出させる工程と、（ｅ）開口部においてＣｕ電極８上に酸化防止膜１４を形成する工程と、を備える。炭化珪素半導体装置１００の製造方法に比べて、酸化防止膜１４が単層であるため製造工程が削減されるという効果が得られる。
＜Ｃ．実施の形態３＞
図１１は、実施の形態３に係る炭化珪素半導体装置１０２の構成を示す断面図である。炭化珪素半導体装置１０２は、実施の形態２に係る炭化珪素半導体装置１０１において、拡散防止膜１１の一部に酸化防止膜１４が乗り上げた構成である。その他の構成は図１０に示した実施の形態２に係る炭化珪素半導体装置１０１と同じであるため、説明を省略する。
実施の形態２に係る炭化珪素半導体装置１０１では、酸化防止膜１４を単層構造にし、拡散防止膜１１と隣接させることにより、有機樹脂膜１０と酸化防止膜１４との密着力不足により生じた空孔から侵入した酸素や水分を食い止めた。
しかし、図１１に示す実施の形態３では、酸化防止膜１４を拡散防止膜１１と隣接させ、さらに拡散防止膜１１上にも配置する。そのため、有機樹脂膜１０と酸化防止膜１４との密着力不足により生じた空孔から侵入した酸素や水分を、拡散防止膜１１及び酸化防止膜１４の界面で食い止めることが出来る。また、拡散防止膜１１はその側面及び上面が酸化防止膜１４と密着するため、両者の密着領域は実施の形態２よりも大きい。従って、上記の食い止める効果は実施の形態２よりも大きく、信頼性が向上する。
＜Ｄ．実施の形態４＞
図１２は、実施の形態４に係る炭化珪素半導体モジュールの構成を示す断面図である。該炭化珪素半導体モジュールは、半導体チップ２２、導板２１，２３，２５、絶縁セラミックス２４、冷却器２７、樹脂２８を備える。
絶縁セラミックス２４の上面と下面には、導板２３，２５がそれぞれ接合される。導板２５は、接合材２６により冷却器２７と接合される。導板２３は、ダイボンド材３０により半導体チップ２２の下面と接合される。
半導体チップ２２には、実施の形態１〜３で説明した炭化珪素半導体装置１０１〜１０３のいずれかが用いられる。半導体チップ２２の上面は、接合材２９により導板２１と接合される。導板２１、半導体チップ２２、導板２３、絶縁セラミックス２４及び導板２５は、樹脂２８で封止される。
このように、図１２に示す炭化珪素半導体モジュールは、半導体チップ２２が絶縁セラミックス２４を介して冷却器２７と接合した構成である。
なお、冷却器２７は図１２に示すように半導体チップ２２の下側に設置されるばかりでなく、半導体チップ２２の上側あるいは上側下側の両方に設置しても構わない。
半導体チップ２２は２００℃以上での動作が可能である。そのため、半導体チップ２２−冷却器２７間の熱抵抗を抑えた構造を用いることにより、炭化珪素半導体モジュールの小型化が可能である。例えばこれを用いてインバータの小型化が可能である。
なお、本発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。
１ 基板、５ ショットキー電極、６ バリアメタル層、７ 金属層、８ Ｃｕ電極、８ａ 第１Ｃｕ層、８ｂ 第２Ｃｕ層、１０ 有機樹脂膜、１１ 拡散防止膜、１３ 裏面外部出力電極、１４ 酸化防止膜、１４ａ 第１酸化防止膜、１４ｂ 第２酸化防止膜、１５ エッチングマスク、１６ レジストマスク、２１，２３，２５ 導板、２２ 半導体チップ、２４ 絶縁性セラミックス、２７ 冷却器、２８ 樹脂、１００，１０１，１０２ 炭化珪素半導体装置。

Claims (14)

  1. 主面を有する半導体基板と、
    前記半導体基板の前記主面の側に選択的に形成されたＣｕ電極と、
    前記Ｃｕ電極の上面にその端部を除いて形成された酸化防止膜と、
    前記半導体基板の前記主面上、前記Ｃｕ電極の側面および上面の前記酸化防止膜が形成されない前記端部が被覆されるようにして、前記酸化防止膜と密着して形成された無機膜と、
    前記Ｃｕ電極の上面の前記端部を除く領域を避けて前記無機膜上に形成された有機樹脂膜と、を備える、
    半導体装置。
  2. 主面を有する半導体基板と、
    前記半導体基板の前記主面の側に選択的に形成されたＣｕ電極と、
    前記Ｃｕ電極の上面にその端部を除いて形成された酸化防止膜と、
    前記半導体基板の前記主面上から前記Ｃｕ電極の側面及び前記酸化防止膜の上面の端部にかけて、前記Ｃｕ電極の上面の前記酸化防止膜が形成されない端部が被覆されるようにして、前記酸化防止膜の上面の前記端部を除く領域を露出させるように形成された無機膜と、
    前記酸化防止膜の上面の前記端部を除く領域を避けて前記無機膜上に形成された有機樹脂膜と、を備える、
    半導体装置。
  3. 前記酸化防止膜は、
    前記Ｃｕ電極上に形成された第１酸化防止膜と、
    前記第１酸化防止膜の上面にその端部を除いて形成された第２酸化防止膜と、を備え、
    前記無機膜は、前記第１酸化防止膜の側面に接して形成される、
    請求項１または２に記載の半導体装置。
  4. 前記半導体基板と前記Ｃｕ電極との間に形成されたバリアメタル層をさらに備え、
    前記無機膜は、前記バリアメタル層の側面に接して形成される、
    請求項１または２に記載の半導体装置。
  5. 前記Ｃｕ電極は、前記バリアメタル層の上面にその端部を除いて形成され、
    前記無機膜は、前記バリアメタル層の上面に接して形成される、
    請求項４に記載の半導体装置。
  6. 前記酸化防止膜は、Ｎｉ，Ａｇ，Ｓｎ，Ａｌ，Ａｕ，又はこれらを含む合金からなり、厚さが１０ｎｍ以上１００μｍ未満である、
    請求項１または２に記載の半導体装置。
  7. 前記第１酸化防止膜は、Ｎｉ，Ａｇ，Ｓｎ，Ａｌ，Ａｕ，又はこれらを含む合金からなり、厚さが１０ｎｍ以上１０μｍ未満である、
    請求項３に記載の半導体装置。
  8. 前記第２酸化防止膜は、Ｎｉ，Ａｇ，Ｓｎ，Ａｌ，Ａｕ，又はこれらを含む合金からなり、厚さが１０ｎｍ以上１００μｍ未満である、
    請求項３に記載の半導体装置。
  9. 前記無機膜はＳｉＮからなり、厚みが３０ｎｍ以上１０μｍ未満である、
    請求項１から８のいずれか１項に記載の半導体装置。
  10. 前記無機膜は屈折率が２．４以上２．７未満の半絶縁性のＳｉＮからなる、
    請求項９に記載の半導体装置。
  11. 前記無機膜はＳｉＯＮからなり、厚みが３０ｎｍ以上１０μｍ未満である、
    請求項１から８のいずれか１項に記載の半導体装置。
  12. 前記有機樹脂膜の厚さが３μｍ以上１００μｍ未満である、
    請求項１から１０のいずれか１項に記載の半導体装置。
  13. 前記Ｃｕ電極の厚さが７μｍ以上１００μｍ未満である、
    請求項１から１２のいずれか１項に記載の半導体装置。
  14. 前記半導体基板は炭化珪素基板である、
    請求項１から１３のいずれか１項に記載の半導体装置。
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