JP5775886B2 - ナノ構造無機−有機ヘテロ接合太陽電池の製造方法 - Google Patents
ナノ構造無機−有機ヘテロ接合太陽電池の製造方法 Download PDFInfo
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
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- 238000005325 percolation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
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- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- HPGNGICCHXRMIP-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dithiine Chemical compound S1CCSC2=CSC=C21 HPGNGICCHXRMIP-UHFFFAOYSA-N 0.000 description 1
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- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 150000005309 metal halides Chemical class 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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- BHAAPTBBJKJZER-UHFFFAOYSA-N p-anisidine Chemical compound COC1=CC=C(N)C=C1 BHAAPTBBJKJZER-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
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- 235000002906 tartaric acid Nutrition 0.000 description 1
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- 231100000331 toxic Toxicity 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Description
20 金属酸化物薄膜
30 電子伝達層
31 金属酸化物粒子
40、40′ 光吸収体
50 正孔伝達層
60 第2の電極
Claims (15)
- a)金属酸化物粒子を含有するスラリーを塗布し、熱処理して多孔性電子伝達層(electron transporting layer)を形成する段階;
b)前記多孔性電子伝達層の金属酸化物粒子の表面に、第1の太陽光吸収スペクトルを有する無機半導体を形成する段階;及び、
c)前記無機半導体が形成された多孔性電子伝達層に下記一般式1で表され、第2の太陽光吸収スペクトルを有し、前記無機半導体の伝導帯のエネルギーレベルであるEcレベルより高いLUMOレベルを有する有機光電物質(organic photovoltaic material)を含有する溶液を含浸して、太陽光の吸収により光電子と光正孔を生成し、前記Ecレベルと前記LUMOレベルとの電位差により、生成された前記光電子が自発的に前記無機半導体に移動する正孔伝達層(hole transporting layer)を形成する段階;
を含む太陽電池の製造方法。
[一般式1]
(式中、R1及びR2は、互いに独立に水素またはC1〜C12アルキル基から選択され、R1及びR2のうちいずれか一つは、C1〜C12アルキル基であり、R1及びR2が同時に水素ではなく、nは2〜10,000である。) - b)段階の無機半導体は、気孔による表面を含む多孔性電子伝達層の表面に接して形成されたナノ粒子である請求項1に記載の太陽電池の製造方法。
- a)段階前、第1の電極の上部に金属酸化物薄膜を形成する段階;及び、
c)段階後、正孔伝達層の上部に第2の電極を形成する段階;をさらに含み、
a)段階の多孔性電子伝達層が、前記金属酸化物薄膜の上部に形成される請求項1又は2に記載の太陽電池の製造方法。 - b)段階は、化学浴析出法(CBD;chemical bath deposition method);及び、連続イオン層吸着及び反応法(SILAR;Successive Ionic Layer Adsorption and Reaction method);から一つ以上選択された方法により実行される請求項1〜3のいずれか一項に記載の太陽電池の製造方法。
- 無機半導体は、気孔による表面を含む多孔性電子伝達層の表面を覆う膜を形成する請求項1〜4のいずれか一項に記載の太陽電池の製造方法。
- a)段階の塗布は、金属酸化物粒子を含有したスラリーを用いて、スクリーンプリンティング(screen printing);スピンコーティング(Spin coating);バーコーティング(Bar coating);グラビアコーティング(Gravure coating);ブレードコーティング(Blade coating);及び、ロールコーティング(Roll coating);から一つ以上選択された方法により実行される請求項1〜5のいずれか一項に記載の電池の製造方法。
- 有機光電物質は、P3HT[poly(3−hexylthiophene)]、P3AT[poly(3−alkylthiophene)]、及びP3OT[poly(3−octylthiophene]から一つ以上選択された物質である請求項1〜6のいずれか一項に記載の太陽電池の製造方法。
- c)段階は、含浸により、有機光電物質で多孔性電子伝達層の気孔が充填され、前記塗布された有機光電物質と無機半導体が接する請求項1〜7のいずれか一項に記載の太陽電池の製造方法。
- 無機半導体は、CdS、CdSe、CdTe、PbS、PbSe、Bi2S3、Bi2Se3、InP、InCuS2、In(CuGa)Se2、Sb2S3、 Sb2Se3、SnSx(1≦x≦2)、NiS、CoS、FeSy(1≦y≦2)、In2S3、MoS、MoSe、及びこれらの合金から一つ以上選択される請求項1〜8のいずれか一項に記載の太陽電池の製造方法。
- 金属酸化物粒子は、TiO2、SnO2、ZnO、WO3、及びNb2O5から一つ以上選択される請求項1〜9のいずれか一項に記載の太陽電池の製造方法。
- 無機半導体の平均粒子直径は、0.5nm乃至10nmである請求項1〜10のいずれか一項に記載の太陽電池の製造方法。
- 多孔性電子伝達層の比表面積は、10乃至100m2/gである請求項1〜11のいずれか一項に記載の太陽電池の製造方法。
- 多孔性電子伝達層の厚さは、0.1乃至5μmである請求項1〜12のいずれか一項に記載の太陽電池の製造方法。
- a2)金属酸化物粒子の金属元素を含有する金属前駆体溶解液に多孔性電子伝達層を浸漬した後、前記多孔性電子伝達層を乾燥して熱処理する段階;をb)段階前にさらに含む請求項1〜13のいずれか一項に記載の太陽電池の製造方法。
- a)段階の熱処理、及びa2)段階の熱処理は、各々、空気中で200乃至550℃で実行される請求項14に記載の太陽電池の製造方法。
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